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1. 发明申请

WO2017100161A1 CONTINUOUS LIQUID LEVEL MEASUREMENT DETECTOR FOR CLOSED METAL CONTAINERS 审中-公开
标题翻译：用于封闭金属容器的连续液位测量探测器
公开(公告)号：WO2017100161A1
公开(公告)日：2017-06-15
申请号：PCT/US2016/065076
申请日：2016-12-06
申请人： APPLIED MATERIALS, INC.
发明人： SEREBRYANOV, Oleg V. , GOLDIN, Alexander , CHOI, Kenric
IPC分类号： G01F23/62
CPC分类号： G01F23/74 , B65D1/00 , G01F25/0061
摘要： Apparatus and methods for determining the liquid level of a canister are described. A magnetic field generated by a floating magnet within the canister is measured by a plurality of magnetic sensors outside of the canister. Methods of calibrating the magnetic sensors and measuring the location of the floating magnet are also described.
摘要翻译：描述了用于确定罐的液位的设备和方法。由罐内的浮动磁体产生的磁场由罐外的多个磁性传感器测量。还描述了校准磁性传感器和测量浮动磁体位置的方法。

2. 发明申请

WO2022216400A1 METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE 审中-公开
公开(公告)号：WO2022216400A1
公开(公告)日：2022-10-13
申请号：PCT/US2022/019528
申请日：2022-03-09
申请人： APPLIED MATERIALS, INC.
发明人： ZAFAR, Abdullah , DURAND, William John , CHONG, Xinyuan , CHOI, Kenric , HU, Weize , CHAN, Kelvin , BAYATI, Amir , SANPEDRO, Michelle , KRAUS, Philip A. , ALLEN, Adolph Miller
IPC分类号： C23C16/448 , C23C16/455 , C23C16/52
摘要： Methods and apparatus for processing a substrate are provided herein. For example, a gas supply configured for use with a processing chamber includes an ampoule that stores a precursor and comprises an input to receive a carrier gas and an output to provide a mixture of the carrier gas and the precursor to the processing chamber and a sensor assembly comprising a detector and an infrared source operably connected to an outside of an enclosure, through which the mixture flows, and a gas measurement volume disposed within the enclosure and along an inner wall thereof so that a concentration of the precursor in the mixture can be measured by the detector and transmitted to a controller.

3. 发明申请

WO2005113852A3 APPARATUSES AND METHODS FOR ATOMIC LAYER DEPOSITION 审中-公开
公开(公告)号：WO2005113852A3
公开(公告)日：2005-12-01
申请号：PCT/US2005/016694
申请日：2005-05-12
申请人： APPLIED MATERIALS, INC. , MYO, Nyi Oo , CHOI, Kenric , KHER, Shreyas , NARWANKAR, Pravin , POPPE, Steve , METZNER, Craig R. , DEATEN, Paul
发明人： MYO, Nyi Oo , CHOI, Kenric , KHER, Shreyas , NARWANKAR, Pravin , POPPE, Steve , METZNER, Craig R. , DEATEN, Paul
IPC分类号： C23C16/455
摘要： Embodiments of the invention provide apparatuses and methods for depositing materials on substrates during vapor deposition processes, such as atomic layer deposition (ALD) . In one embodiment, a chamber contains a chamber lid (832) containing an expanding channel (834) formed within a thermally insulating material (838) either directly within the chamber lid or formed within a funnel liner attached thereon. The chamber further includes at least one conduit (841 a-d) coupled to a gas inlet within the expanding channel and positioned to provide a gas flow in a circular direction, such as a vortex, a helix or a spiral. The chamber may contain a retaining ring (819), an upper process liner (822), a lower process liner (824) or a slip valve liner (826) . Liners usually have a polished surface finish and contain a thermally insulating material such as fused quartz or ceramic. In an alternative embodiment, a deposition system contains a catalytic water vapor generator connected to an ALD chamber.

4. 发明申请

WO2022109212A1 METHODS AND APPARATUS TO REDUCE PRESSURE FLUCTUATIONS IN AN AMPOULE OF A CHEMICAL DELIVERY SYSTEM 审中-公开
公开(公告)号：WO2022109212A1
公开(公告)日：2022-05-27
申请号：PCT/US2021/060003
申请日：2021-11-19
申请人： APPLIED MATERIALS, INC.
发明人： DURUKAN, Ilker , RASHEED, Muhammad M. , CHOI, Kenric , SATO, Tatsuya
IPC分类号： C23C16/448 , C23C16/455
摘要： Methods and apparatus to reduce pressure fluctuations in a chemical delivery system for a process chamber are provided herein. In some embodiments, a chemical delivery system for a process chamber, includes: a carrier gas supply; an ampoule fluidly coupled to the carrier gas supply via a first supply line, wherein the ampoule is configured to supply one or more process gases to the process chamber via a second supply line; an inlet valve disposed in line with the first supply line to control a flow of a carrier gas from the carrier gas supply to the ampoule; and a first control valve disposed in line with a pressure regulation line, wherein the pressure regulation line is fluidly coupled to the first supply line at a tee location between the carrier gas supply and the inlet valve.

5. 发明申请

WO2013052145A1 IN-SITU HYDROXYLATION APPARATUS 审中-公开
标题翻译：现场羟化装置
公开(公告)号：WO2013052145A1
公开(公告)日：2013-04-11
申请号：PCT/US2012/023810
申请日：2012-02-03
申请人： APPLIED MATERIALS, INC. , CHOI, Kenric
发明人： CHOI, Kenric
IPC分类号： H01L21/205
CPC分类号： C23C16/4404 , C23C16/45544 , H01L21/6719 , H01L21/68742 , H01L21/68757
摘要： Described are apparatuses and methods for the hydroxylation of a substrate surface using ammonia and water vapor.
摘要翻译：描述了使用氨和水蒸汽使基材表面羟基化的装置和方法。

6. 发明申请

WO2009117440A1 HEATED VALVE MANIFOLD FOR AMPOULE 审中-公开
标题翻译：加热阀门用于AMPOULE
公开(公告)号：WO2009117440A1
公开(公告)日：2009-09-24
申请号：PCT/US2009/037430
申请日：2009-03-17
申请人： APPLIED MATERIALS, INC. , CHOI, Kenric , NGUYEN, Son, T.
发明人： CHOI, Kenric , NGUYEN, Son, T.
IPC分类号： H01L21/205
CPC分类号： C23C16/4481 , C23C16/45561
摘要： Embodiments of the invention provide an apparatus and a method for generating a gaseous chemical precursor that may be used in a vapor deposition processing system. In one embodiment, the apparatus contains a valve manifold assembly, which includes a valve assembly body having at least one embedded electric heater, an inlet channel passing through the valve assembly body, a first pneumatic valve and a first manual valve coupled to the valve assembly body and positioned to control fluid flow within the inlet channel, an outlet channel passing through the valve assembly body, and a second pneumatic valve and a second manual valve coupled to the valve assembly body and positioned to control fluid flow within the outlet channel. The valve manifold assembly further contains a bypass channel connected to and between the inlet and outlet channels, and containing a bypass valve positioned to control fluid flow within the bypass channel.
摘要翻译：本发明的实施方案提供了一种用于产生可用于气相沉积处理系统的气态化学前体的装置和方法。在一个实施例中，该装置包括阀歧管组件，其包括具有至少一个嵌入式电加热器的阀组件主体，穿过阀组件主体的入口通道，第一气动阀和联接到阀组件的第一手动阀并且定位成控制入口通道内的流体流动，穿过阀组件本体的出口通道，以及耦合到阀组件主体并定位成控制出口通道内的流体流动的第二气动阀和第二手动阀。阀歧管组件还包括连接到入口通道和出口通道之间并且在入口通道和出口通道之间的旁通通道，并且包含定位成控制旁通通道内的流体流动的旁通阀。

7. 发明申请

WO2013016208A2 REACTANT DELIVERY SYSTEM FOR ALD/CVD PROCESSES 审中-公开
标题翻译：用于ALD / CVD工艺的反应物输送系统
公开(公告)号：WO2013016208A2
公开(公告)日：2013-01-31
申请号：PCT/US2012/047641
申请日：2012-07-20
申请人： APPLIED MATERIALS, INC. , CHOI, Kenric , YUDOVSKY, Joseph , MARCUS, Steven D. , ULLOA, Ernesto
发明人： CHOI, Kenric , YUDOVSKY, Joseph , MARCUS, Steven D. , ULLOA, Ernesto
IPC分类号： H01L21/205 , H01L21/02
CPC分类号： C23C16/4408 , C23C16/4481 , Y10T137/6416 , Y10T137/86911
摘要： Provided are apparatus and methods for generating a chemical precursor. The apparatus comprises an inlet line to be connected to an ampoule and an outlet line to be connected to an ampoule. The inlet line having an inlet valve to control the flow of a carrier gas into the ampoule and the outlet line has an outlet valve to control the flow exiting the ampoule. A bypass valve allows carrier gas to bypass the ampoule and purge the outlet valve without flowing gas into the ampoule.
摘要翻译：提供了用于产生化学前体的设备和方法。该设备包括连接到安瓿的入口管线和连接到安瓿的出口管线。入口管线具有入口阀以控制载气流入安瓿并且出口管线具有出口阀以控制离开安瓿的流动。旁路阀允许载气绕过安瓿并清洗出口阀，而不会使气体流入安瓿。

8. 发明申请

WO2012106612A2 IN-SITU HYDROXYLATION SYSTEM 审中-公开
标题翻译：现场羟化系统
公开(公告)号：WO2012106612A2
公开(公告)日：2012-08-09
申请号：PCT/US2012/023797
申请日：2012-02-03
申请人： APPLIED MATERIALS, INC. , CHOI, Kenric , SATO, Tatsuya E. , ULLOA, Ernesto
发明人： CHOI, Kenric , SATO, Tatsuya E. , ULLOA, Ernesto
IPC分类号： H01L21/205
CPC分类号： C23C16/0272 , C23C16/02 , C23C16/45544
摘要： Described are systems and methods for the Hydroxylation of a substrate surface using ammonia and water vapor.
摘要翻译：描述了使用氨和水蒸汽对基底表面羟基化的系统和方法。

9. 发明申请

WO2010135250A2 METHODS FOR DETERMINING THE QUANTITY OF PRECURSOR IN AN AMPOULE 审中-公开
标题翻译：用于确定前置放大器数量的方法
公开(公告)号：WO2010135250A2
公开(公告)日：2010-11-25
申请号：PCT/US2010/035124
申请日：2010-05-17
申请人： APPLIED MATERIALS, INC. , YUDOVSKY, Joseph , TOBIN, Jeffrey , LIU, Patricia, M. , GUNGOR, Faruk , NGO, Tai, T. , TESCH, Travis , CHOI, Kenric
发明人： YUDOVSKY, Joseph , TOBIN, Jeffrey , LIU, Patricia, M. , GUNGOR, Faruk , NGO, Tai, T. , TESCH, Travis , CHOI, Kenric
IPC分类号： C23C16/52 , C23C16/44 , C23C16/00 , H01L21/205
CPC分类号： C23C16/4481
摘要： Methods of determining an amount of precursor in an ampoule have been provided herein. In some embodiments, a method for determining an amount of solid precursor in an ampoule may include determining a first pressure in an ampoule having a first volume partially filled with a solid precursor; flowing an amount of a first gas into the ampoule to establish a second pressure in the ampoule; determining a remaining portion of the first volume based on a relationship between the first pressure, the second pressure, and the amount of the first gas flowed into the ampoule; and determining the amount of solid precursor in the ampoule based on the first volume and the remaining portion of the first volume.
摘要翻译：本文提供了确定安瓿中前体的量的方法。在一些实施方案中，用于测定安瓿中的固体前体的量的方法可包括确定具有部分填充有固体前体的第一体积的安瓿中的第一压力; 将一定量的第一气体流入安瓿中以在安瓿中建立第二压力; 基于第一压力，第二压力和流入安瓿的第一气体的量之间的关系来确定第一容积的剩余部分; 并且基于第一体积和第一体积的剩余部分确定安瓿中的固体前体的量。

10. 发明申请

WO2023278129A1 AMPOULE FOR A SEMICONDUCTOR MANUFACTURING PRECURSOR 审中-公开
公开(公告)号：WO2023278129A1
公开(公告)日：2023-01-05
申请号：PCT/US2022/033187
申请日：2022-06-13
申请人： APPLIED MATERIALS, INC.
发明人： DURAND, William J. , CHOI, Kenric , KWONG, Garry K.
IPC分类号： C23C16/448 , H01L21/67 , C23C16/4481 , C23C16/45561
摘要： Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port and an outlet port. Alternating first and second elongate walls in the container are arranged to define longitudinal flow channels containing a precursor material, and alternating first and second passages between each of the longitudinal flow channels permitting fluid communication between adjacent longitudinal flow channels, wherein the first passages are located in a lower portion of the precursor cavity and the second passages are located an upper portion of the cavity. A flow path is defined by the longitudinal flow channels and the passages, through which a carrier gas flows in contact with the precursor material. In one or more embodiments, the precursor material is a solid.

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