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1. 发明申请

WO2004004085A2 NITRIDE SEMICONDUCTOR LASER DEVICE AND A METHOD FOR IMPROVING ITS PERFORMANCE 审中-公开
标题翻译：氮化物半导体激光器件和改善其性能的方法
公开(公告)号：WO2004004085A2
公开(公告)日：2004-01-08
申请号：PCT/PL0300061
申请日：2003-06-26
申请人： AMMONO SP ZOO , NICHIA CORP , DWILINSKI ROBERT , DORADZINSKI ROMAN , GARCZYNSKI JERZY , SIERZPUTOWSKI LESZEK P , KANBARA YASUO
发明人： DWILINSKI ROBERT , DORADZINSKI ROMAN , GARCZYNSKI JERZY , SIERZPUTOWSKI LESZEK P , KANBARA YASUO
IPC分类号： H01L21/208 , C30B7/00 , C30B9/00 , H01S5/028 , H01S5/16 , H01S5/323 , H01S5/343
CPC分类号： C30B29/403 , C30B7/005 , C30B9/00 , C30B29/406 , H01S5/0281 , H01S5/164 , H01S5/32341
摘要： The present invention relates to a nitride semiconductor laser device provided with a window layer on a light-emitting end face of the resonator which comprises an active layer of nitride semiconductor between the n-type nitride semiconductor layers and the p-type nitride semiconductor layers, in which at least the radiation-emitting end face of said resonator is covered by said window layer comprising monocrystalline nitride of general formula A1xGa1-x-yInyN, where 0
摘要翻译：本发明涉及在谐振器的发光端面上设置有窗口层的氮化物半导体激光器件，该窗口层包括在n型氮化物半导体层和p型氮化物半导体层之间的氮化物半导体有源层，其中至少所述谐振器的辐射发射端面被所述窗口层覆盖，所述窗口层包括通式AlxGa1-x-yInyN的单晶氮化物，其中0≤x+y≤1,0≤x≤1和 0 <= y <1，具有比有源层更宽的能隙并且在低温下形成以不损伤所述有源层。这种窗口层的形成显着改善了根据本发明的氮化物激光器器件的性能。

2. 发明申请

WO03035945A3 SUBSTRATE FOR EPITAXY 审中-公开
标题翻译：外延基材
公开(公告)号：WO03035945A3
公开(公告)日：2003-10-16
申请号：PCT/PL0200077
申请日：2002-10-25
申请人： AMMONO SP ZOO , NICHIA CORP , DWILINSKI ROBERT , DORADZINSKI ROMAN , GARCZYNSKI JERZY , SIERZPUTOWSKI LESZEK P , KANBARA YASUO
发明人： DWILINSKI ROBERT , DORADZINSKI ROMAN , GARCZYNSKI JERZY , SIERZPUTOWSKI LESZEK P , KANBARA YASUO
IPC分类号： C01B21/06 , C30B7/00 , C30B7/10 , C30B9/00 , C30B29/38 , C30B29/40 , H01L21/02 , H01S5/028 , H01S5/323
CPC分类号： C30B29/403 , C30B7/00 , C30B7/10 , C30B29/40 , C30B29/406 , H01S5/0281 , H01S5/32341
摘要： The invention relates to a substrate for epitaxy, especially for preparation of nitride semiconductor layers. Invention covers a bulk nitride mono-crystal characterized in that it is a mono-crystal of gallium nitride and its cross-section in a plane perpendicular to c-axis of hexagonal lattice of gallium nitride has a surface area greater than 100 mm , it is more than 1,0 mu m thick and its C-plane surface dislocation density is less than 10 /cm , while its volume is sufficient to produce at least one further-processable non-polar A-plane or M-plane plate having a surface area at least 100 mm . More generally, the present invention covers a bulk nitride mono-crystal which is characterized in that it is a mono-crystal of gallium-containing nitride and its cross-section in a plane perpendicular to c-axis of hexagonal lattice of gallium-containing nitride has a surface area greater than 100 mm , it is more 1,0 mu m thick and its surface dislocation density is less than 10 /cm . Mono-crystals according to the present invention are suitable for epitaxial growth of nitride semiconductor layers. Due to their good crystalline quality they are suitable for use in opto-electronics for manufacturing opto-electronic semiconductor devices based on nitrides, in particular for manufacturing semiconductor laser diodes and laser devices. The a.m bulk mono-crystals of gallium-containing nitride are crystallized on seed crystals. Various seed crystals may be used. The bulk mono-crystals of gallium-containing nitride are crystallized by a method involving dissolution of a gallium-containing feedstock in a supercritical solvent and crystallization of a gallium nitride on a surface of seed crystal, at temperature higher and/or pressure lower than in the dissolution process.
摘要翻译：本发明涉及用于外延的衬底，特别是用于制备氮化物半导体层。本发明涉及一种本体氮化物单晶，其特征在于它是氮化镓的单晶，其在垂直于氮化镓的六方晶格的c轴的平面中的横截面具有大于100mm 2的表面积厚度超过1.0μm，其C面表面位错密度小于10 6 / cm 2，体积足以产生至少一种可再加工的非极性A- 平面或M平面板，其表面积至少为100mm 2。更一般来说，本发明涉及一种块状氮化物单晶，其特征在于它是含镓氮化物的单晶，其在垂直于含镓氮化物的六方晶格的c轴的平面中的横截面表面积大于100mm 2，其厚度为1.0μm，表面位错密度小于10 6 / cm 2。根据本发明的单晶适用于氮化物半导体层的外延生长。由于它们具有良好的结晶质量，它们适用于制造基于氮化物的光电子半导体器件的光电子器件，特别是用于制造半导体激光二极管和激光器件。含镓氮化物的大体积单晶在晶种上结晶。可以使用各种晶种。含镓氮化物的体积单晶通过包括在超临界溶剂中溶解含镓原料并在氮化镓在晶种表面上结晶的方法结晶，温度高于和/或低于溶解过程。

3. 发明申请

WO2004053206A9 PROCESS FOR OBTAINING BULK MONOCRYSTALLINE GALLIUM-CONTAINING NITRIDE 审中-公开
标题翻译：用于获得大容量单晶含氮氮化物的方法
公开(公告)号：WO2004053206A9
公开(公告)日：2004-08-19
申请号：PCT/JP0315904
申请日：2003-12-11
申请人： AMMONO SP ZOO , NICHIA CORP , DWILINSKI ROBERT , DORADZINSKI ROMAN , GARCZYNSKI JERZY , SIERZPUTOWSKI LESZEK , KANBARA YASUO
发明人： DWILINSKI ROBERT , DORADZINSKI ROMAN , GARCZYNSKI JERZY , SIERZPUTOWSKI LESZEK , KANBARA YASUO
IPC分类号： C30B9/00 , C30B29/40
CPC分类号： C30B29/403 , C30B7/00 , C30B7/005 , C30B29/406
摘要： A process for obtaining bulk mono-crystalline gallium-containing nitride, eliminating impurities from the obtained crystal and manufacturing substrates made of bulk mono-crystalline gallium-containing nitride has been now proposed. According to the invention, the process for obtaining of mono-crystalline gallium-containing nitride from the gallium-containing feedstock in a supercritical ammonia-containing solvent with mineralizer addition is characterized in that the feedstock is in the form of metallic gallium and the mineralizer is in the form of elements of Group I and/or their mixtures, and/or their compounds, especially those containing nitrogen and/or hydrogen, whereas the ammonia-containing solvent is in the form of the mineralizer and ammonia, there are two temperature zones in each step of the process, and the feedstock is placed in the dissolution zone, and at least one mono-crystalline seed is deposited in the crystallization zone, and following the transition of the solvent to the supercritical state, the process comprises the first step of transition of the feedstock from the metallic form to the polycrystalline gallium-containing nitride, and the second step of crystallization of the gallium-containing nitride through gradual dissolution of the feedstock and selective crystallization of gallium-containing nitride on at least one mono-crystalline seed at the temperature higher than that of the dissolution of the feedstock, while all the vital components of the reaction system (including the feedstock, seeds and mineralizer) invariably remain within the system throughout the whole process, and consequently bulk mono-crystalline gallium-containing nitride is obtained. The invention relates also the the post-treatment (slicing, annealing and washing) of the thus obtained crystals.The improved process and the bulk monocrystals obtained thereby are intended mainly for use in the field of opto-electronics.
摘要翻译：现在提出了一种用于获得块状单晶含镓氮化物的方法，从所获得的晶体中消除杂质并制造由块状单晶含镓氮化物制成的衬底。根据本发明，在具有矿化剂添加的超临界含氨溶剂中从含镓原料获得单晶含镓氮化物的方法的特征在于原料为金属镓的形式，矿化剂为以I族元素和/或它们的混合物的形式，和/或它们的化合物，特别是含有氮和/或氢的化合物，而含氨的溶剂是矿化剂和氨的形式，存在两个温度区在该方法的每个步骤中，并且将原料置于溶解区中，并且至少一种单晶种子沉积在结晶区中，并且在溶剂转变为超临界状态之后，该方法包括第一步骤原料从金属形式向多晶含镓氮化物的转变，以及第二含镓镓的结晶步骤通过原料的逐渐溶解使氮化物和在至少一种单晶种子上的含镓氮化物在比原料溶解的温度高的温度下选择性结晶，同时反应体系的所有重要组分（包括原料，种子和矿化剂）在整个过程中总是保持在系统内，因此获得了大块单晶含镓氮化物。本发明还涉及由此获得的晶体的后处理（切片，退火和洗涤）。由此获得的改进的工艺和主体单晶主要用于光电子领域。

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