专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2008103188A1 HIGH EFFICIENCY PARTIAL DISTRIBUTED FEEDBACK (P-DFB) LASER 审中-公开
标题翻译：高效率部分分布式反馈（P-DFB）激光器
公开(公告)号：WO2008103188A1
公开(公告)日：2008-08-28
申请号：PCT/US2007/073518
申请日：2007-07-13
申请人： ALFALIGHT , KANSKAR, Manoj , HE, Yiping , MACOMBER, Steven H.
发明人： KANSKAR, Manoj , HE, Yiping , MACOMBER, Steven H.
IPC分类号： H01S5/12
CPC分类号： H01S5/12 , B82Y20/00 , H01S5/0287 , H01S5/1039 , H01S5/1203 , H01S5/187 , H01S5/34313
摘要： A second-order multi-mode partial distributed feedback (p-DFB) laser having increased electrical-to-optical power conversion efficiency, stabilized wavelength and narrowed emission linewidth. The laser includes an abbreviated grating 22 housed in the laser cavity that is separated from both the front-end and the back-end of the laser facets 18, 20.
摘要翻译：具有增加的电 - 光功率转换效率，稳定的波长和变窄的发射线宽的二阶多模式部分分布反馈（p-DFB）激光器。激光器包括容纳在激光腔中的缩写光栅22，其与激光刻面18,20的前端和后端分开。

2. 发明申请

WO2006044314A1 SEMICONDUCTOR LASER DIODE 审中-公开
标题翻译：半导体激光二极管
公开(公告)号：WO2006044314A1
公开(公告)日：2006-04-27
申请号：PCT/US2005/036360
申请日：2005-10-11
申请人： ALFALIGHT INC , KANSKAR, Manoj , EARLES, Thomas , STIERS, Eric
发明人： KANSKAR, Manoj , EARLES, Thomas , STIERS, Eric
IPC分类号： H01S5/00 , H01S3/04
CPC分类号： H01S5/34 , B82Y20/00 , H01S5/20 , H01S5/2009 , H01S5/32
摘要： A semiconductor laser diode comprises a p-n junction. The p-n junction comprises a substrate, an n-type semiconductor layer, a p-type semiconductor layer, and a quantum well. The quantum well is disposed between the n-type semiconductor layer and the p-type semiconductor layer. The substrate is formed from a first material system, the n-type semiconductor layer is formed from a second material system, the p-type semiconductor layer is formed from a third material system, and the quantum well is formed from a fourth material system. The second material system is different from the third material system. The second material system and the third material system are selected such that there is an increase in the rate of recombinations of the electrons from the n-type semiconductor layer and the holes from the p-type semiconductor layer in the quantum well. This results in a lower turn-on voltage for the semiconductor laser diode.
摘要翻译：半导体激光二极管包括p-n结。 p-n结包括衬底，n型半导体层，p型半导体层和量子阱。量子阱设置在n型半导体层和p型半导体层之间。基板由第一材料体系形成，n型半导体层由第二材料体系形成，p型半导体层由第三材料体系形成，量子阱由第四材料体系形成。第二种材料体系与第三种材料体系不同。选择第二材料系统和第三材料系统，使得来自n型半导体层的电子和来自量子阱中的p型半导体层的空穴的复合速率增加。这导致半导体激光二极管的较低的导通电压。

3. 发明申请

WO2021030718A1 HIGH BRIGHTNESS FIBER COUPLED DIODE LASERS WITH CIRCULARIZED BEAMS 审中-公开
公开(公告)号：WO2021030718A1
公开(公告)日：2021-02-18
申请号：PCT/US2020/046440
申请日：2020-08-14
申请人： NLIGHT, INC. , CHEN, Zhigang , SMALL, Jay , KANSKAR, Manoj
发明人： CHEN, Zhigang , SMALL, Jay , KANSKAR, Manoj
IPC分类号： G02B27/09
摘要： Apparatus include a plurality of laser diodes configured to emit respective laser diode beams having perpendicular fast and slow beam divergence axes mutually perpendicular to respective beam axes, and beam shaping optics configured to receive the laser diode beams and to circularize an ensemble image space and NA space of the laser diode beams at an ensemble coupling plane. In selected examples, beam shaping optics include variable fast axis telescopes configured to provide variable fast axis magnification and beam displacement.

4. 发明申请

WO2021030721A1 VARIABLE MAGNIFICATION AFOCAL TELESCOPE ELEMENT 审中-公开
公开(公告)号：WO2021030721A1
公开(公告)日：2021-02-18
申请号：PCT/US2020/046443
申请日：2020-08-14
申请人： NLIGHT, INC. , SMALL, Jay , CHEN, Zhigang , KANSKAR, Manoj
发明人： SMALL, Jay , CHEN, Zhigang , KANSKAR, Manoj
IPC分类号： G02B27/09 , G02B19/00 , H01S5/50
摘要： Apparatus include a transmissive optical substrate configured to receive a plurality of laser beams propagating along respective parallel beam axes at respective initial beam displacements with respect to an optical axis of the transmissive optical substrate, and configured to produce laser output beams having reduced displacements, wherein the transmissive optical substrate includes first and second surfaces with respective first and second curvatures defined to increase an output beam magnification and to nonlinearly increase an output beam displacement from the optical axis for a linearly increasing input beam displacement from the optical axis.

5. 发明申请

WO2018132498A1 POWER AND BRIGHTNESS SCALING IN FIBER COUPLED DIODE LASERS USING DIODES WITH OPTIMIZED BEAM DIMENSIONS 审中-公开
公开(公告)号：WO2018132498A1
公开(公告)日：2018-07-19
申请号：PCT/US2018/013201
申请日：2018-01-10
申请人： NLIGHT, INC. , CHEN, Zhigang , HEMENWAY, David, Martin , KANSKAR, Manoj
发明人： CHEN, Zhigang , HEMENWAY, David, Martin , KANSKAR, Manoj
IPC分类号： H01S5/40
摘要： A number of beams that can be coupled into an optical fiber can be increased using emitted beams having greater divergence, thus providing increased beam power. Alternatively, with a fixed number of emitters, total optical power can be maintained with fewer beams in an output beam with a smaller numerical aperture.

6. 发明申请

WO2013055383A1 HIGH POWER SEMICONDUCTOR LASER WITH PHASE-MATCHING OPTICAL ELEMENT 审中-公开
标题翻译：具有相位匹配光学元件的高功率半导体激光器
公开(公告)号：WO2013055383A1
公开(公告)日：2013-04-18
申请号：PCT/US2012/000411
申请日：2012-09-21
申请人： NLIGHT PHOTONICS CORPORATION , KANSKAR, Manoj
发明人： KANSKAR, Manoj
IPC分类号： H01S5/06 , H01S5/20 , H01S5/10
CPC分类号： H01S5/1014 , H01S5/0287 , H01S5/1085 , H01S5/12 , H01S5/1203 , H01S5/22 , H01S2301/166
摘要： A semiconductor laser that includes a single mode semiconductor laser coupled to a flared power amplifier is provided, the device including an internal or an external optical element that reinforces the curved wave front of the flared section of the device through phase-matching. By reinforcing the curved wave front via phase-matching, the device is less susceptible to thermal and gain-index coupled perturbations, even at high output powers, resulting in higher beam quality. Exemplary phase-matching optical elements include a grating integrated into the flared amplifier section; an intra-cavity, externally positioned binary optical element; and an intra-cavity, externally positioned cylindrically curved optical element.
摘要翻译：提供了包括耦合到扩口功率放大器的单模半导体激光器的半导体激光器，该器件包括通过相位匹配来加强器件的扩口部分的弯曲波前的内部或外部光学元件。通过相位匹配对弯曲波前进行加强，即使在高输出功率下，器件也不易受到热和增益折射率的耦合扰动的影响，从而导致更高的光束质量。示例性相位匹配光学元件包括集成到扩张放大器部分中的光栅; 腔内，外部定位的二进制光学元件; 以及腔内，外部定位的圆柱形弯曲光学元件。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式