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    • 6. 发明申请
    • METHOD FOR PREPARING AN OXIDE FILM ON A POLYMERIC SUBSTRATE
    • 在聚合物基材上制备氧化膜的方法
    • WO2016080918A1
    • 2016-05-26
    • PCT/SG2015/050466
    • 2015-11-20
    • AGENCY FOR SCIENCE,TECHNOLOGY AND RESEARCH
    • GOH, Kia Liang GregoryLI, JingLE, Hong Quang
    • C08J7/04C08G77/18
    • C09D183/06C08G77/14C08G77/26C08J7/06C08J2369/00C09D183/08C23C18/1216C23C18/1233
    • Various embodiments refer to a method for preparing an oxide film on a polymeric substrate, wherein the oxide film is a titanium oxide film (which is optionally niobium- or silicon- doped) or silicon oxide film. The method comprises contacting a polymeric substrate with a liquid reagent comprising a polyalkoxysilane such as 3-aminopropyltriethoxysilane to form a Iayer of the polyalkoxysilane on the polymeric substrate by self-assembly, and contacting said Iayer with an aqueous mixture comprising (i) titanium tetrafiuoride and/or a fluorine-containing titanium complex such as ammonium hexafluorotitanate and/or a fluorine-containing silicon complex such as ammonium hexafluorosilicate, and (ii) a fluorine scavenger such as boric acid, at a temperature of less than about 100 °C to obtained the oxide film on the polymeric substrate. An oxide film prepared by said method is also provided.
    • 各种实施方案涉及在聚合物基材上制备氧化膜的方法,其中所述氧化物膜是氧化钛膜(可选地是铌或硅掺杂的)或氧化硅膜。 该方法包括使聚合物基质与包含聚烷氧基硅烷如3-氨基丙基三乙氧基硅烷的液体试剂接触,以通过自组装在聚合物基材上形成聚烷氧基硅烷的层,并使所述Iayer与含有(i)四氟化钛和 /或六氟钛酸铵和/或六氟硅酸铵等含氟硅配合物等含氟钛络合物和(ⅱ)氟清除剂如硼酸在低于约100℃的温度下反应,得到 聚合物基底上的氧化膜。 还提供了通过所述方法制备的氧化膜。