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1. 发明申请

WO2009003343A1 METHODS AND APPARATUS FOR CLEANING SEMICONDUCTOR WAFERS 审中-公开
标题翻译：清洗半导体波形的方法和装置
公开(公告)号：WO2009003343A1
公开(公告)日：2009-01-08
申请号：PCT/CN2007/070234
申请日：2007-07-05
申请人： ACM RESEARCH (SHANGHAI) INC. , WANG, Hui , WANG, Jian , MA, Yue , HE, Chuan
发明人： WANG, Hui , WANG, Jian , MA, Yue , HE, Chuan
IPC分类号： H01L21/304 , H01L21/306
CPC分类号： H01L21/02041 , B08B3/12 , H01L21/02052 , H01L21/02063 , H01L21/6704 , H01L21/67051
摘要： An apparatus for cleaning a surface of wafer (1010) or substrate includes a plate (1008) being positioned with a gap to surface of the wafer (1010) or substrate, and the plate (1008) being rotated around an axis vertical to surface of the wafer or substrate. The rotating plate surface facing surface of the wafer or substrate has grooves, regular patterns, and irregular patterns to enhance the cleaning efficiency. The apparatus further includes an ultra sonic or mega sonic transducer (3006) vibrating the rotating plate during cleaning process.
摘要翻译：用于清洁晶片（1010）或基板的表面的设备包括定位成与晶片（1010）或基板的表面间隙的板（1008），并且板（1008）围绕垂直于晶片晶片或衬底。晶片或基板的旋转板表面相对表面具有凹槽，规则图案和不规则图案以提高清洁效率。该装置还包括超声波或超声波换能器（3006），其在清洁过程中振动旋转板。

2. 发明申请

WO2012174732A1 METHODS AND APPARATUS FOR UNIFORMLY METALLIZATION ON SUBSTRATES 审中-公开
标题翻译：用于基底上均匀金属化的方法和装置
公开(公告)号：WO2012174732A1
公开(公告)日：2012-12-27
申请号：PCT/CN2011/076262
申请日：2011-06-24
申请人： ACM RESEARCH (SHANGHAI) INC. , WANG, Hui , MA, Yue , HE, Chuan , WANG, Xi
发明人： WANG, Hui , MA, Yue , HE, Chuan , WANG, Xi
IPC分类号： C25D5/02 , C25D5/16
CPC分类号： C25D21/10 , C25D5/08 , C25D5/18 , C25D5/20 , C25D7/12 , C25D7/123 , C25D17/00 , C25D17/001 , C25D17/002 , C25D17/008 , C25D17/06 , H01L21/02 , H01L21/67138
摘要： An apparatus for substrate metallization from electrolyte is provided. The apparatus comprises: an immersion cell containing metal salt electrolyte; at least one electrode connecting to at least one power supply; an electrically conductive substrate holder holding at least one substrate to expose a conductive side of the substrate to face the at least one electrode; an oscillating actuator for oscillating the substrate holder with an amplitude and a frequency; at least one ultrasonic device with an operating frequency and an intensity, disposed in the metallization apparatus; at least one ultrasonic power generator connecting to the ultrasonic device; at least one inlet for metal slat electrolyte feeding; and at least one outlet for metal salt electrolyte draining.
摘要翻译：提供了一种用于从电解质进行衬底金属化的设备。该装置包括：含有金属盐电解质的浸液池; 连接至少一个电源的至少一个电极; 保持至少一个基板的导电基板保持器，以暴露所述基板的导电侧面对所述至少一个电极; 用于以幅度和频率振荡衬底保持器的振荡致动器; 设置在所述金属化装置中的具有工作频率和强度的至少一个超声装置; 连接到所述超声波装置的至少一个超声波发生发电机; 用于金属板条电解质进料的至少一个入口; 和用于金属盐电解液排出的至少一个出口。

3. 发明申请

WO2010031215A1 METHOD FOR SUBSTANTIALLY UNIFORM COPPER DEPOSITION ONTO SEMICONDUCTOR WAFER 审中-公开
标题翻译：用于将半导体沉积物沉积到半导体晶体上的方法
公开(公告)号：WO2010031215A1
公开(公告)日：2010-03-25
申请号：PCT/CN2008/072373
申请日：2008-09-16
申请人： ACM RESEARCH (SHANGHAI) INC. , MA, Yue , WANG, Xi , HE, Chuan , WANG, Hui
发明人： MA, Yue , WANG, Xi , HE, Chuan , WANG, Hui
IPC分类号： C25D5/02 , C25D5/18 , C25D21/12 , C25D17/00 , H01L21/288
CPC分类号： C25D5/08 , C25D5/18 , C25D7/123 , C25D17/001 , C25D17/12 , C25D21/12 , H01L21/2885
摘要： The methods practiced in an electrochemical deposition apparatus with two or more electrodes, described in earlier inventions, are disclosed. The methods produce uniform copper films with WFNU less than 2.5% on semiconductor wafers bearing a resistive copper seed layer with a thickness ranging from 50 to 9O0A in a copper sulfate based electrolyte whose conductivity is between 0.02 to 0.8S/cm.
摘要翻译：公开了在具有两个或多个电极的电化学沉积设备中实施的方法，其在先前的发明中描述。该方法在导电率为0.02至0.8S / cm的硫酸铜基电解质中，在半导体晶片上产生厚度范围为50至90OA的电阻铜籽晶层的WFNU小于2.5％的均匀铜膜。

4. 发明申请

WO2009114965A1 ELECTROCHEMICAL DEPOSITION SYSTEM 审中-公开
标题翻译：电化学沉积系统
公开(公告)号：WO2009114965A1
公开(公告)日：2009-09-24
申请号：PCT/CN2008/070531
申请日：2008-03-19
申请人： ACM RESEARCH (SHANGHAI) INC. , MA, Yue , HE, Chuan , PANG, Zhenxu , SHI, Guangtao , XIA, Jiexu , NUCH, Voha , WANG, Hui
发明人： MA, Yue , HE, Chuan , PANG, Zhenxu , SHI, Guangtao , XIA, Jiexu , NUCH, Voha , WANG, Hui
IPC分类号： C25D7/12 , C25D19/00 , C25D17/00 , H01L21/00
CPC分类号： H01L21/6723 , C25D5/48 , C25D5/50 , C25D17/00 , C25D17/001 , C25D17/02 , C25D17/04 , C25D21/02 , H01L21/67178
摘要： An electrochemical deposition system which has a 3-D stacked architecture comprises a factory interface (10) for receiving semiconductor wafers, a mainframe (11) comprising a mainframe transfer robot (102,106) and a plurality of wafer holder assemblies (105) which disposed on the top thereof, a plurality of electroplating cells (107) disposed within the mainframe, a plurality of cleaning cells (107) disposed within the mainframe and located below the electroplating cells, a plurality of thermal treatment chambers disposed in between the mainframe and the factory interface, and a fluid distribution system fluidly connected to the electroplating cells and the cleaning cells, wherein the mainframe transfer robot transfers semiconductor wafers from the factory interface and within electroplating cells, the cleaning cell, the thermal chambers and delivery and storage cassettes. As a result, the system of present invention is expandable to accommodate newly-added processing units without over much increased footprint.
摘要翻译：具有3-D堆叠结构的电化学沉积系统包括用于接收半导体晶片的工厂接口（10），包括主机传送机器人（102,106）和多个晶片保持器组件（105）的主机（11）其顶部，设置在主机内的多个电镀电池（107），设置在主机内并位于电镀单元下方的多个清洁电池（107），设置在主机和工厂之间的多个热处理室界面和流体连接到电镀单元和清洁单元的流体分配系统，其中主机传送机器人从工厂接口和电镀单元，清洁单元，热室和输送和存储盒中传送半导体晶片。结果，本发明的系统可扩展以适应新增的处理单元，而不会增加足够的占地面积。

5. 发明申请

WO2009114964A1 SOLUTION PREPARATION APPARATUS AND METHOD FOR TREATING INDIVIDUAL SEMICONDUCTOR WORKPIECE 审中-公开
标题翻译：解决方案制备设备和处理个人半导体工件的方法
公开(公告)号：WO2009114964A1
公开(公告)日：2009-09-24
申请号：PCT/CN2008/070514
申请日：2008-03-17
申请人： ACM RESEARCH (SHANGHAI) INC. , MA, Yue , HE, Chuan , SHI, Guangtao , VOHA, Nuch , WANG, Hui
发明人： MA, Yue , HE, Chuan , SHI, Guangtao , VOHA, Nuch , WANG, Hui
IPC分类号： H01L21/306 , H01L21/00 , G03F7/30
CPC分类号： H01L21/6715 , H01L21/67051 , H01L21/6708 , H01L21/67253
摘要： A low-cost apparatus for chemical solution preparation with controlled process parameters is provided. Such parameters include chemical age, temperature, yield of active ingredients at the point of use, and so on. In addition, the apparatus provides chamber-to-chamber consistency on these parameters across multiple processing chambers in a single wafer wet-clean system. A method utilizing resident time of the chemical solution mixture to achieve optimal combined effect of the chemical solution mixture for best wafer treatment results is also provided.
摘要翻译：提供了一种低成本的具有受控工艺参数的化学溶液制备装置。这些参数包括化学年龄，温度，使用时活性成分的产量等等。此外，该装置在单个晶片湿清洁系统中的多个处理室上提供这些参数的腔室与室之间的一致性。还提供了利用化学溶液混合物的驻留时间来获得化学溶液混合物以获得最佳晶片处理结果的最佳组合效果的方法。

6. 发明申请

WO2009079874A1 METHODS AND APPARATUS FOR CLEANING SEMICONDUCTOR WAFERS 审中-公开
标题翻译：清洗半导体波形的方法和装置
公开(公告)号：WO2009079874A1
公开(公告)日：2009-07-02
申请号：PCT/CN2007/071210
申请日：2007-12-10
申请人： ACM RESEARCH (SHANGHAI) INC. , NUCH, Voha , WANG, David , MA, Yue , CHEN, Fufa , WANG, Jian , HUANG, Yunwen , XIE, Liangzhi , HE, Chuan
发明人： NUCH, Voha , WANG, David , MA, Yue , CHEN, Fufa , WANG, Jian , HUANG, Yunwen , XIE, Liangzhi , HE, Chuan
IPC分类号： H01L21/30
CPC分类号： H01L21/67051
摘要： An apparatus for cleaning and conditioning the surface of a semiconductor substrate such as wafer includes a rotatable chuck, a chamber, a rotatable tray for collecting cleaning solution with one or more drain outlets, multiple receptors for collecting multiple cleaning solutions, a first motor to drive chuck, and a second motor to drive the tray. The drain outlet in the tray can be positioned directly above its designated receptor located under the drain outlet. The cleaning solution collected by the tray can be guided into designated receptor. One characteristic of the apparatus is having a robust and precisely controlled cleaning solution recycle with minimum cross contamination.
摘要翻译：用于清洁和调理诸如晶片的半导体衬底的表面的设备包括可转动卡盘，腔室，用于收集具有一个或多个排出口的清洁溶液的可旋转托盘，用于收集多个清洁溶液的多个受体，用于驱动的第一马达卡盘和第二马达驱动托盘。托盘中的排水出口可以位于排水出口下方的指定接收器的正上方。由托盘收集的清洁溶液可以被引导到指定的受体中。该设备的一个特征是具有坚固且精确控制的清洁溶液循环，具有最小的交叉污染。

7. 发明申请

WO2009026765A1 METHOD AND APPARATUS FOR THERMAL TREATMENT OF SEMICONDUCTOR WORKPIECES 审中-公开
标题翻译：半导体工件热处理方法和装置
公开(公告)号：WO2009026765A1
公开(公告)日：2009-03-05
申请号：PCT/CN2007/070582
申请日：2007-08-29
申请人： ACM RESEARCH (SHANGHAI) INC. , MA, Yue , HE, Chuan , PANG, Zhenxu , WANG, David , NUCH, Voha
发明人： MA, Yue , HE, Chuan , PANG, Zhenxu , WANG, David , NUCH, Voha
IPC分类号： H01L21/324 , F27D9/00 , C30B31/12
CPC分类号： H01L21/324 , F27B17/0025 , H01L21/67109 , H01L21/6719
摘要： An apparatus and method for rapid and uniform thermal treatment of semiconductor workpieces in two closely arranged thermal treatment chambers with a retractable door between them are provided. The retractable door moves in between two thermal treatment chambers during heating or cooling process, and additional heating and cooling sources are provided for double-side thermal treatment of the semiconductor workpieces.
摘要翻译：提供了一种用于在两个紧密布置的热处理室中快速均匀地热处理半导体工件的装置和方法，其间具有可伸缩门。可伸缩门在加热或冷却过程中在两个热处理室之间移动，并且为半导体工件的双面热处理提供附加的加热和冷却源。

8. 发明申请

WO2014012237A1 METHOD AND APPARATUS FOR GROWING NITRIDE-BASED COMPOUND SEMICONDUCTOR CRYSTALS 审中-公开
标题翻译：用于生长基于氮化物的化合物半导体晶体的方法和装置
公开(公告)号：WO2014012237A1
公开(公告)日：2014-01-23
申请号：PCT/CN2012/078899
申请日：2012-07-19
申请人： IDEAL ENERGY EQUIPMENT (SHANGHAI) LTD. , HUANG, Zhanchao , HE, Chuan , MA, Yue , CHEONG, Hungseob , SONG, Tao , UMOTOY, Sal , HU, Bing , XI, Ming
发明人： HUANG, Zhanchao , HE, Chuan , MA, Yue , CHEONG, Hungseob , SONG, Tao , UMOTOY, Sal , HU, Bing , XI, Ming
IPC分类号： C23C16/455 , C30B25/14 , H01L21/205 , H01L21/20 , C30B25/02 , C30B29/38 , C23C16/18 , C23C16/34 , C23C16/52
CPC分类号： C23C16/303 , C23C16/45551 , C30B25/14 , C30B29/403 , H01L21/0254 , H01L21/0262
摘要： Disclosed are a MOCVD method and a gas distribution apparatus for fabricating nitride-based semiconductor crystals with high Al content between 20% and 100%, providing an inhomogeneous mixing of metalorganic and ammonia reactants in the gaseous environment to form a plurality of alternating zones, one rich in metalorganic source and the other rich in ammonia, immediately above the epitaxy substrates. This inhomogeneously mixed gaseous phase reduces parasitic reaction. In epitaxy process, the hot epitaxy substrates continuously move under said alternating zones of reactants, passing each zone at the time scales from a few milliseconds to a few tens of milliseconds.
摘要翻译：公开了一种MOCVD方法和气体分配装置，用于制造高Al含量在20％至100％之间的氮化物基半导体晶体，从而在气态环境中提供金属有机和氨反应物的不均匀混合以形成多个交替区，一个富含金属有机源和其他富含氨，立即在外延基板上方。这种非均匀混合的气相减少寄生反应。在外延过程中，热的外延衬底在反应物的所述交替区域下连续地移动，使得每个区域的时间尺度从几毫秒到几十毫秒。

9. 发明申请

WO2007090123A2 MGRA IS A REDOX REGULATOR OF ANTIBIOTIC SENSITIVITY AND VIRULENCE 审中-公开
标题翻译： MGRA是抗氧化剂灵敏度和毒性的氧化还原调节剂
公开(公告)号：WO2007090123A2
公开(公告)日：2007-08-09
申请号：PCT/US2007/061316
申请日：2007-01-30
申请人： UNIVERSITY OF CHICAGO , CHEN, Peng , HE, Chuan
发明人： CHEN, Peng , HE, Chuan
IPC分类号： C12Q1/18 , C07K14/195 , A61P31/04
CPC分类号： C12Q1/18 , A61K38/00 , C07K14/31 , G01N33/569 , G01N33/56938 , G01N2333/21 , G01N2333/31 , G01N2333/315 , G01N2333/32 , G01N2500/00
摘要： The present invention relates to the identification of a specific cysteine (Cys) residue in MgrA of Staphylococcus aureus and homologs in other bacteria that acts as a redox switch to regulate virulence of S. aureus and expression of bacterial genes that confer resistance to antibiotics. In addition, MgrA is found to be a key virulence determinant for S. aureus . Oxidative regulation of other Cys containing proteins in various bacteria has been observed, leading to the ability to modulate virulence and resistance of these organisms.
摘要翻译：本发明涉及鉴定金黄色葡萄球菌MgrA中的特定半胱氨酸（Cys）残基和其他细菌中的同系物，其充当氧化还原开关以调节金黄色葡萄球菌和赋予抗生素抗性的细菌基因的表达。另外，MgrA被发现是金黄色葡萄球菌的关键毒力决定因子。已经观察到在各种细菌中含有其他Cys蛋白的氧化调节，导致调节这些生物的毒力和抗性的能力。

10. 发明申请

WO2002061252A1 SYSTEM FOR DECOUPLING EGR FLOW AND TURBOCHARGER SWALLOWING CAPACITY/EFFICIENCY CONTROL MECHANISMS 审中-公开
标题翻译：用于解除EGR流量和涡轮增压器吞吐能力/效率控制机制的系统
公开(公告)号：WO2002061252A1
公开(公告)日：2002-08-08
申请号：PCT/US2002/002364
申请日：2002-01-28
申请人： CUMMINS, INC. , BRACKNEY, Larry, J. , DOLLMEYER, Thomas, A. , MILLER, Paul, R. , HE, Chuan
发明人： BRACKNEY, Larry, J. , DOLLMEYER, Thomas, A. , MILLER, Paul, R. , HE, Chuan
IPC分类号： F02D21/08
CPC分类号： F02D41/0052 , F02B37/18 , F02B37/24 , F02D9/04 , F02D41/0007 , F02D41/0065 , F02D41/1401 , F02D2041/1419 , F02D2041/1422 , F02D2041/1427 , F02M26/05 , F02M26/10 , F02M26/23 , F02M26/47 , Y02T10/144 , Y02T10/47
摘要： A system for decoupling EGR flow and turbocharger swallowing capacity/efficiency control mechanisms includes a multiple-input multiple-output (MIMO) transform manager coupled to one or more of an EGR valve, an exhaust throttle and a variable geometry turbocharger (VGT) actuator of an internal combustion engine. The MIMO transform manager is responsive to commanded charge flow and EGR fraction parameters to decouple the EGR/exhaust throttle and VGT control parameters such that these control mechanisms may be controlled individually and independently of each other. One transform output is provided to a first compensator for controlling EGR flow and/or exhaust throttle operation as a function of charge flow error. The other transform output is provided to a second independent compensator for controlling VGT operation also as a function of charge flow error. Both compensators are configured to provide for transient compensator gain adjustment based on the degree of charge flow error, and the VGT compensator is further configured to provide for transient compensator gain adjustment based on a ratio of commanded fueling and oxygen/fuel ratio. The resulting control strategy provides for independent control of EGR flow/exhaust throttle and a VGT actuator, thereby resulting in better and more consistent control over mass charge flow.
摘要翻译：用于去耦EGR流和涡轮增压器吞咽能力/效率控制机构的系统包括多输入多输出（MIMO）变换管理器，其耦合到一个或多个EGR阀，排气节流阀和可变几何涡轮增压器（VGT）致动器内燃机 MIMO变换管理器响应于指令的充电流量和EGR分数参数来解耦EGR /排气节流阀和VGT控制参数，使得这些控制机构可以彼此独立地且独立地被控制。一个变换输出被提供给第一补偿器，用于控制作为电荷流动误差的函数的EGR流和/或排气节流操作。另一变换输出提供给第二独立补偿器，用于控制VGT操作，也作为充电流量误差的函数。两个补偿器被配置为基于充电流量误差的程度来提供瞬时补偿器增益调整，并且VGT补偿器还被配置为基于指令加油和氧气/燃料比的比率来提供瞬时补偿器增益调整。所得到的控制策略提供了EGR流量/排气节流阀和VGT致动器的独立控制，从而导致对质量流量的更好和更一致的控制。

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