专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2007133330A3 SUBSTRATE ILLUMINATION AND INSPECTION SYSTEM 审中-公开
标题翻译：基板照明和检查系统
公开(公告)号：WO2007133330A3
公开(公告)日：2008-05-02
申请号：PCT/US2007006558
申请日：2007-03-15
申请人： ACCRETECH USA INC , ROBBINS MICHAEL D , FORDERHASE PAUL F , BAILEY JOEL B , NGUYEN KEVIN
发明人： ROBBINS MICHAEL D , FORDERHASE PAUL F , BAILEY JOEL B , NGUYEN KEVIN
IPC分类号： G01N31/00
CPC分类号： G01N21/9503 , G01N21/4738
摘要： A substrate illumination and inspection system provides for illuminating and inspecting a substrate particularly the substrate edge. The system uses a light diffuser with a plurality of lights disposed at its exterior or interior for providing uniform diffuse illumination of a substrate. An optic and imaging system exterior of the light diffuser are used to inspect the plurality of surfaces of the substrate including specular surfaces. The optic is held at an angle from a surface normal to avoid reflective artifacts from the specular surface of the substrate. The optic can be rotated radially relative to a center point of the substrate edge to allow for focused inspection of all surfaces of the substrate edge. The plurality of lights can modulate color and intensity of light to enhance inspection of the substrate for defects.
摘要翻译：衬底照明和检查系统提供用于照明和检查衬底，特别是衬底边缘。该系统使用具有设置在其外部或内部的多个光的光漫射器，用于提供衬底的均匀漫射照明。光扩散器的光学和成像系统外部用于检查包括镜面的基板的多个表面。光学元件保持与表面法线成一定角度，以避免来自基板的镜面的反射伪影。光学元件可以相对于基板边缘的中心点径向旋转，以允许对基板边缘的所有表面进行聚焦检查。多个光可以调制光的颜色和强度，以增强基板对缺陷的检查。

2. 发明申请

WO2009021207A2 APPARATUS AND METHOD FOR WAFER EDGE EXCLUSION MEASUREMENT 审中-公开
标题翻译：用于波形边缘排除测量的装置和方法
公开(公告)号：WO2009021207A2
公开(公告)日：2009-02-12
申请号：PCT/US2008072683
申请日：2008-08-08
申请人： ACCRETECH USA INC , JIN JU , SADAM SATISH , VERMA VISHAL , HUANG ZHIYAN , LIN SIMING , ROBBINS MICHAEL D , FORDERHASE PAUL F
发明人： JIN JU , SADAM SATISH , VERMA VISHAL , HUANG ZHIYAN , LIN SIMING , ROBBINS MICHAEL D , FORDERHASE PAUL F
IPC分类号： H01L21/66
CPC分类号： G01N21/4738 , G01N21/9503
摘要： A substrate illumination and inspection system provides for illuminating and inspecting a substrate particularly the substrate edge. The system uses a light diffuser with a plurality of lights disposed at its exterior or interior for providing uniform diffuse illumination of a substrate. An optic and imaging system exterior of the light diffuser are used to inspect the plurality of surfaces of the substrate including specular surfaces. An automatic defect characterization processor is provided.
摘要翻译：衬底照明和检查系统提供用于照明和检查衬底，特别是衬底边缘。该系统使用具有设置在其外部或内部的多个光的光漫射器，用于提供衬底的均匀漫射照明。光扩散器的光学和成像系统外部用于检查包括镜面的基板的多个表面。提供自动缺陷表征处理器。

3. 发明申请

WO2008005541A3 CLEAN IGNITION SYSTEM FOR WAFER SUBSTRATE PROCESSING 审中-公开
标题翻译：用于晶片衬底处理的清洁点火系统
公开(公告)号：WO2008005541A3
公开(公告)日：2008-02-21
申请号：PCT/US2007015589
申请日：2007-07-06
申请人： ACCRETECH USA INC , BAILEY JOEL BRAD , HURET JEAN-MICHEL CLAUDE , FORDERHASE PAUL F , SADAM SATISH , STRATTON SCOTT ALLEN , ROBBINS MICHAEL D
发明人： BAILEY JOEL BRAD , HURET JEAN-MICHEL CLAUDE , FORDERHASE PAUL F , SADAM SATISH , STRATTON SCOTT ALLEN , ROBBINS MICHAEL D
IPC分类号： H01L21/304
CPC分类号： H01L21/6719 , H01L21/6708 , H01L21/67126 , H01L21/68735
摘要： An edge area of the substrate processing device is disclosed. The edge area being processed is isolated from the remainder of the substrate by directing a flow of an inert gas through a plenum near the area to be processed thus forming a barrier while directing a flow of reactive species at an angle relative to the top surface of the substrate towards the substrate edge area thus processing the substrate edge area. A flow of oxygen containing gas into the processing chamber together with a negative exhaust pressure may contribute to the biasing of reactive species and other gases away from the non-processing areas of the substrate. A clean ignition system is used to ignite the combustion flame.
摘要翻译：公开了基板处理装置的边缘区域。通过引导惰性气体流通过靠近待处理区域的充气室，从而形成阻挡层，同时引导活性物质流相对于顶部表面成角度，从而将正在处理的边缘区域与衬底的其余部分隔离朝向基板边缘区域的基板因此处理基板边缘区域。含氧气体与负排气压一起流入处理室可有助于偏离基板的非处理区域的反应性物质和其他气体。使用干净的点火系统点燃燃烧火焰。

4. 发明申请

WO2008005539A2 APPARATUS FOR CLEANING A WAFER SUBSTRATE 审中-公开
标题翻译：用于清洗晶片衬底的装置
公开(公告)号：WO2008005539A2
公开(公告)日：2008-01-10
申请号：PCT/US2007015586
申请日：2007-07-06
申请人： ACCRETECH USA INC , BAILEY JOEL BRAD , HURET JEAN-MICHEL CLAUDE , FORDERHASE PAUL F , SADAM SATISH , STRATTON SCOTT ALLEN , ROBBINS MICHAEL D
发明人： BAILEY JOEL BRAD , HURET JEAN-MICHEL CLAUDE , FORDERHASE PAUL F , SADAM SATISH , STRATTON SCOTT ALLEN , ROBBINS MICHAEL D
CPC分类号： H01L21/6719 , H01L21/6708 , H01L21/67126 , H01L21/68735
摘要： A method and apparatus for dry chemical processing a wafer at atmospheric pressure is disclosed. The edge area of a substrate is placed in isolation from the remainder of the substrate. According to the present teachings, a method for centering a wafer on a rotatable chuck is provided. The method includes the steps of positioning a wafer adjacent to a micrometer. The wafer is then rotated and a plurality of wafer edge locations and rotational increments are measured. A center offset value for the value of the wafer center with respect to a chuck is calculated. The wafer is then moved with respect to a center position of the chuck.
摘要翻译：公开了一种用于在大气压力下对晶片进行干化学处理的方法和设备。衬底的边缘区域与衬底的其余部分隔离放置。根据本教导，提供了一种用于使晶片在可旋转吸盘上对中的方法。该方法包括将晶片放置在千分尺附近的步骤。然后旋转晶片并测量多个晶片边缘位置和旋转增量。计算晶片中心相对于卡盘的值的中心偏移值。然后晶片相对于卡盘的中心位置移动。

5. 发明申请

WO2009021202A3 APPARATUS AND METHOD FOR WAFER EDGE DEFECTS DETECTION 审中-公开
标题翻译：检测边缘缺陷的装置和方法
公开(公告)号：WO2009021202A3
公开(公告)日：2009-04-09
申请号：PCT/US2008072673
申请日：2008-08-08
申请人： ACCRETECH USA INC , JIN JU , SADAM SATISH , VERMA VISHAL , HUANG ZHIYAN , LIN SIMING , ROBBINS MICHAEL D , FORDERHASE PAUL F
发明人： JIN JU , SADAM SATISH , VERMA VISHAL , HUANG ZHIYAN , LIN SIMING , ROBBINS MICHAEL D , FORDERHASE PAUL F
IPC分类号： H01L21/66
CPC分类号： G01N21/9503 , G01N2021/8861
摘要： A substrate illumination and inspection system provides for illuminating and inspecting a substrate particularly the substrate edge. The system a image processor to automatically detect and characterize defects on the wafer's edge.
摘要翻译：衬底照明和检查系统提供用于照明和检查衬底，特别是衬底边缘。该系统用于自动检测和表征晶圆边缘缺陷的图像处理器。

6. 发明申请

WO2008005540A3 METHOD AND APPARATUS FOR CLEANING A WAFER SUBSTRATE 审中-公开
标题翻译：清洗基片的方法和装置
公开(公告)号：WO2008005540A3
公开(公告)日：2008-02-21
申请号：PCT/US2007015588
申请日：2007-07-06
申请人： ACCRETECH USA INC , BAILEY JOEL BRAD , HURET JEAN-MICHEL CLAUDE , FORDERHASE PAUL F , SADAM SATISH , STRATTON SCOTT ALLEN , ROBBINS MICHAEL D
发明人： BAILEY JOEL BRAD , HURET JEAN-MICHEL CLAUDE , FORDERHASE PAUL F , SADAM SATISH , STRATTON SCOTT ALLEN , ROBBINS MICHAEL D
IPC分类号： H01L21/304
CPC分类号： H01L21/6719 , H01L21/6708 , H01L21/67126 , H01L21/68735
摘要： An edge area of the substrate processing device is disclosed. The edge area being processed is isolated from the remainder of the substrate by directing a flow of an inert gas through a plenum near the area to be processed thus forming a barrier while directing a flow of reactive species at an angle relative to the top surface of the substrate towards the substrate edge area thus processing the substrate edge area. A flow of oxygen containing gas into the processing chamber together with a negative exhaust pressure may contribute to the biasing of reactive species and other gases away from the non-processing areas of the substrate.
摘要翻译：公开了一种基板处理装置的边缘区域。正在处理的边缘区域与基板的其余部分分离，通过使惰性气体流通过待处理区域附近的增压室，从而形成屏障，同时将反应物流的流动相对于顶部表面成一定角度基板朝向基板边缘区域，从而处理基板边缘区域。含氧气体流入处理室以及负排气压力可能有助于反应物质和其他气体偏离衬底的非处理区域的偏置。

7. 发明申请

WO03092337A2 METHOD AND APPARATUS FOR SHAPING THIN FILMS IN THE NEAR-EDGE REGIONS OF IN-PROCESS SEMICONDUCTOR SUBSTRATES 审中-公开
标题翻译：在过程半导体衬底的近边区域形成薄膜的方法和装置
公开(公告)号：WO03092337A2
公开(公告)日：2003-11-06
申请号：PCT/US0312615
申请日：2003-04-24
申请人： ACCRETECH USA INC
发明人： ROBBINS MICHAEL D
IPC分类号： H01L21/3065 , H01L21/00 , H01L21/31 , H01L21/311 , H01L21/316 , H05H
CPC分类号： H01L21/6708 , H01J37/32366 , H01L21/31116 , H01L21/31612 , H01L21/67069
摘要： An atmospheric plasma source is employed as a source of chemically active gaseous species. The chemically active gaseous species so generated are directed towards the near-edge surfaces of in-process semiconductor substrates via gas flow control devices and electro-mechanical positioning devices. Informed selection of the plasma source input gases allows the skilled practitioner to tailor the performance of the output chemistry to achieve either material removal or material deposition. Shaping of the substrate removal or deposition process is achieved by controlling the relative motion between the substrate and the plasma source.
摘要翻译：使用大气等离子体源作为化学活性气体物质的来源。如此生成的化学活性气体物质通过气流控制装置和机电定位装置被引向过程半导体衬底的近边缘表面。等离子体源输入气体的知情选择允许本领域技术人员调整输出化学物质的性能以实现材料去除或材料沉积。通过控制衬底和等离子体源之间的相对运动来实现衬底去除或沉积工艺的成形。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式