会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 7. 发明申请
    • NON-RADIATIVELY PUMPED WAVELENGTH CONVERTER
    • 非反射式波长转换器
    • WO2010123809A3
    • 2011-01-13
    • PCT/US2010031577
    • 2010-04-19
    • 3M INNOVATIVE PROPERTIES COSCHARDT CRAIG RLEATHERDALE CATHERINE A
    • SCHARDT CRAIG RLEATHERDALE CATHERINE A
    • H01L27/15H01L33/08H01L33/38H01L33/50
    • H01L27/156H01L33/08H01L33/20H01L33/38H01L33/502H01L2933/0083
    • A light source has an active layer (204) disposed between a first doped semiconductor layer (206) and a second doped semiconductor layer (208). The active layer has energy levels associated with light of a first wavelength. Light emitting elements (216) are positioned on the surface of the first doped semiconductor layer (206) for non-radiative excitation by the active layer. The light emitting elements are capable of emitting light at a second wavelength different from the first wavelength. In some embodiments a grid electrode (213) is disposed on the first doped semiconductor layer and defines open regions (214) of a surface of the first doped layer, the first plurality of light emitting elements being positioned in the open regions. In some embodiments a second plurality of light emitting elements is disposed over the first plurality of light emitting elements for non-radiative excitation by at least some of the first plurality of light emitting elements.
    • 光源具有设置在第一掺杂半导体层(206)和第二掺杂半导体层(208)之间的有源层(204)。 活性层具有与第一波长的光相关联的能级。 发光元件(216)位于第一掺杂半导体层(206)的表面上,用于由有源层进行非辐射激励。 发光元件能够发射不同于第一波长的第二波长的光。 在一些实施例中,栅电极(213)设置在第一掺杂半导体层上,并且限定第一掺杂层的表面的开放区域(214),第一多个发光元件位于开放区域中。 在一些实施例中,第二多个发光元件设置在第一多个发光元件上,用于通过至少一些第一多个发光元件进行非辐射激励。