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1. 发明申请

WO2004055249A1 化合物半導体単結晶の製造方法および結晶成長装置审中-公开
标题翻译：生产化合物半导体和晶体生长装置的单晶的方法
公开(公告)号：WO2004055249A1
公开(公告)日：2004-07-01
申请号：PCT/JP2003/012695
申请日：2003-10-03
申请人：株式会社日鉱マテリアルズ , 朝日聰明 , 佐藤賢次 , 矢辺貴幸 , 荒川篤俊
发明人：朝日聰明 , 佐藤賢次 , 矢辺貴幸 , 荒川篤俊
IPC分类号： C30B15/12
CPC分类号： C30B27/02 , C30B15/12 , C30B29/48 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： A process for producing a single crystal of compound semiconductor; and a crystal growing apparatus therefor. In particular, a process for producing a single crystal of compound semiconductor, for example, ZnTe compound semiconductor according to the liquid-enclosed Czochralski (LEC) process; and a crystal growing apparatus therefor. More specifically, a process for producing a single crystal of compound semiconductor with the use of a crystal growing apparatus of double crucible structure according to the LEC process, wherein a second crucible is covered with a lid of plate-shaped member provided with a pass-through slot, the pass-through slot enabling introduction of a crystal lifting shaft having a seed crystal holding part at its distal end in the second crucible, so that crystal growth is effected in such conditions that the atmosphere within the second crucible is substantially unchanged (semisealed conditions). Thus, in the crystal growth according to the LEC process, a single crystal of high quality wherein the ratio of crystal defects is low can be produced.
摘要翻译：一种化合物半导体单晶的制造方法; 及其晶体生长装置。特别地，涉及一种化合物半导体的单晶的制造方法，例如，根据液体封闭的切克劳斯基（LEC）工艺的ZnTe化合物半导体; 及其晶体生长装置。更具体地，使用根据LEC工艺的双坩埚结构的晶体生长装置来制造化合物半导体的单晶的方法，其中第二坩埚用设置有通孔的板状部件的盖子覆盖，通过槽，能够在第二坩埚中的远端引入具有晶种保持部的晶体升降轴，使得在第二坩埚内的气氛基本不变的条件下进行晶体生长（半成品条件）。因此，在根据LEC工艺的晶体生长中，可以产生其中晶体缺陷的比例低的高质量的单晶。

2. 发明申请

WO2003106744A1 ＺｎＴｅ系化合物半導体単結晶の製造方法およびＺｎＴｅ系化合物半導体単結晶审中-公开
标题翻译：用于生产ZnTe基化合物半导体单晶和ZnTe基化合物半导体单晶的方法
公开(公告)号：WO2003106744A1
公开(公告)日：2003-12-24
申请号：PCT/JP2003/002829
申请日：2003-03-11
申请人：株式会社日鉱マテリアルズ , 佐藤賢次 , 矢辺貴幸
发明人：佐藤賢次 , 矢辺貴幸
IPC分类号： C30B29/48
CPC分类号： C30B11/00 , C30B29/48
摘要： The invention relates to a method for producing a ZnTe-based compound semiconductor single crystal, particularly to a technique applied to production of a high-resistance ZnTe-based compound semiconductor single crystal. The method is for producing a large-sized, high-resistance ZnTe-based compound semiconductor single crystal, and for producing a ZnTe or ZnTe-based compound semiconductor single crystal containing three or more elements including Zn and Te. In the method, a predetermined amount of one or more elements of 3d transition metals is added as impurities for creating an energy level near the center of the energy gap during the growth of the single crystal. The effect of the invention is to increase the resistance of the ZnTe-based compound semiconductor single crystal, and the ZnTe-based compound semiconductor single crystal is preferable to production of an E/O device used for oscillation or reception of ultra-high frequency higher than terahertzs.
摘要翻译：本发明涉及一种ZnTe基化合物半导体单晶的制造方法，特别涉及高电阻ZnTe类化合物半导体单晶的制造技术。该方法用于制造大尺寸，高电阻ZnTe基化合物半导体单晶，并且用于制备包含三种或更多种包括Zn和Te的元素的ZnTe或ZnTe基化合物半导体单晶。在该方法中，添加预定量的一种或多种3d过渡金属元素作为杂质，用于在单晶生长期间产生靠近能隙中心的能级。本发明的效果是提高ZnTe基化合物半导体单晶的电阻，并且ZnTe类化合物半导体单晶优于生产用于振荡或接收超高频的E / O装置。比太赫兹。

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