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    • 1. 发明申请
    • 熱処理方法及び熱処理装置
    • 热处理方法和热处理装置
    • WO2004015750A1
    • 2004-02-19
    • PCT/JP2003/010173
    • 2003-08-08
    • 東京エレクトロン株式会社鈴木 啓介王 文凌米川 司池内 俊之佐藤 享
    • 鈴木 啓介王 文凌米川 司池内 俊之佐藤 享
    • H01L21/205
    • H01L21/67253C23C16/46C23C16/52H01L21/0217H01L21/02211H01L21/02238H01L21/02255H01L21/02271H01L21/31662H01L21/67109H01L21/67248H01L22/20Y10T436/25
    • A heat treatment method having a step wherein plural zones of a heat treatment atmosphere in a reactor are respectively heated by plural heating means and a step wherein a thin film is formed on surfaces of plural substrates by introducing a treatment gas into the reactor. The heat treatment steps include a first heat treatment step wherein plural first substrates, each of which consumes less treatment gas than a product substrate, are used; a first measuring step wherein the thickness of a thin film is measured in each zone; a first setting step wherein a temperature preset value is set in each heating means so that the thickness of each film reaches the target value; a second heat treatment step wherein the preset temperature is used for plural second substrates, each of which consumes more treatment gas than the first substrate; a second measuring step wherein the thickness of a thin film formed on a surface of the second substrate is measured in each zone; a second correcting step wherein the preset temperature set in each heating means is corrected; and a third heat treatment step wherein the heat treatment steps are conducted on plural product substrates using the corrected temperature preset value.
    • 一种具有以下步骤的热处理方法,其中反应器中的热处理气氛的多个区域分别被多个加热装置加热,并且通过将处理气体引入反应器中而在多个基板的表面上形成薄膜的步骤。 热处理步骤包括第一热处理步骤,其中使用多个第一衬底,每个第一衬底比产品衬底消耗更少的处理气体; 第一测量步骤,其中在每个区域中测量薄膜的厚度; 第一设定步骤,其中在每个加热装置中设置温度预设值,使得每个胶片的厚度达到目标值; 第二热处理步骤,其中预设温度用于多个第二基板,每个基板消耗比第一基板更多的处理气体; 第二测量步骤,其中在每个区域中测量形成在第二基板的表面上的薄膜的厚度; 第二校正步骤,其中校正在每个加热装置中设置的预设温度; 以及第三热处理步骤,其中使用校正的温度预设值对多个产品基板进行热处理步骤。