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1. 发明申请

WO2010030057A1 APPARATUS AND METHOD FOR DETECTING BIOMOLECULES 审中-公开
标题翻译：检测生物分子的装置和方法
公开(公告)号：WO2010030057A1
公开(公告)日：2010-03-18
申请号：PCT/KR2008/006843
申请日：2008-11-20
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE , AH, Chil-Seong , KIM, Ansoon , PARK, Chan-Woo , AHN, Chang-Geun , YANG, Jong-Heon , BAEK, In-Bok , KIM, Taeyoub , YANG, HyeKyoung , SUNG, Gun-Yong , PARK, Seon-Hee , YU, Han-Young , JANG, Moon-Gyu
发明人： AH, Chil-Seong , KIM, Ansoon , PARK, Chan-Woo , AHN, Chang-Geun , YANG, Jong-Heon , BAEK, In-Bok , KIM, Taeyoub , YANG, HyeKyoung , SUNG, Gun-Yong , PARK, Seon-Hee , YU, Han-Young , JANG, Moon-Gyu
IPC分类号： G01N27/06
CPC分类号： G01N33/54373 , B01L3/502761 , B01L2200/143 , B01L2300/0636 , B01L2300/0645 , B01L2300/0867 , B01L2300/163 , B01L2400/0415 , G01N27/4145
摘要： Provided are an apparatus and method for detecting biomolecules. The apparatus includes a FET having a substrate, a source electrode, a drain electrode, a channel region between the source and drain electrodes, and probe molecules fixed to the channel region, wherein the source and drain electrodes are separated on the substrate, a microfluid supplier selectively supplying one of a reference buffer solution of low ionic concentration and a reaction solution of high ionic concentration containing target molecules, to the channel region of the FET to which the probe molecules are fixed, and a biomolecule detector detecting the target molecules by measuring a first current value of the channel region of the FET, and a second current value of the channel region of the FET to which the target molecules and the probe molecules that bind to each other in the reaction solution of high ionic concentration are fixed.
摘要翻译：提供了用于检测生物分子的装置和方法。该装置包括具有基板，源电极，漏电极，源极和漏极之间的沟道区以及固定到沟道区的探针分子的FET，其中源电极和漏电极在衬底上分离，微流体供应商选择性地将低离子浓度的参考缓冲溶液和含有靶分子的高离子浓度的反应溶液中的一种提供给探针分子固定的FET的通道区域，以及通过测量来检测靶分子的生物分子检测器 FET的沟道区域的第一电流值和在高离子浓度的反应溶液中彼此结合的靶分子和探针分子的FET的沟道区域的第二电流值是固定的。

2. 发明申请

WO2009072722A1 SEMICONDUCTOR NANOWIRE SENSOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体纳米传感器器件及其制造方法
公开(公告)号：WO2009072722A1
公开(公告)日：2009-06-11
申请号：PCT/KR2008/004331
申请日：2008-07-24
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE , PARK, Chan Woo , AHN, Chang Geun , YANG, Jong Heon , BAEK, In Bok , AH, Chil Seong , YU, Han Young , KIM, An Soon , KIM, Tae Youb , JANG, Moon Gyu , JUN, Myung Sim
发明人： PARK, Chan Woo , AHN, Chang Geun , YANG, Jong Heon , BAEK, In Bok , AH, Chil Seong , YU, Han Young , KIM, An Soon , KIM, Tae Youb , JANG, Moon Gyu , JUN, Myung Sim
IPC分类号： H01L29/00 , H01L29/78
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y15/00 , H01L29/0673 , H01L29/78696
摘要： A method for manufacturing a biosensor device is provided. The method involves forming a silicon nanowire channel with a line width of several nanometers to several tens of nanometers using a typical photolithography process, and using the channel to manufacture a semiconductor nanowire sensor device. The method includes etching a first conductivity-type single crystalline silicon layer which is a top layer of a Silicon-On-Insulator (SOI) substrate to form a first conductivity-type single crystalline silicon line pattern, doping both sidewalls of the first conductivity-type single crystalline silicon line pattern with impurities of a second conductivity-type opposite to the first conductivity-type to form a second conductivity-type channel, forming second conductivity-type pads for forming electrodes at both ends of the first conductivity-type single crystalline silicon line pattern, forming, in an undoped region of the first conductivity-type single crystalline silicon line pattern, a first electrode for applying a reverse-bias voltage to insulate the first conductivity-type single crystalline silicon line pattern and the second conductivity-type channel from each other, and forming second electrodes for applying a bias voltage across the second conductivity-type channel on the second conductivity-type pad.
摘要翻译：提供一种制造生物传感器装置的方法。该方法包括使用典型的光刻工艺形成线宽为几纳米至几十纳米的硅纳米线通道，并使用该通道制造半导体纳米线传感器装置。该方法包括蚀刻作为绝缘体上硅（SOI）衬底的顶层的第一导电型单晶硅层，以形成第一导电型单晶硅线阵列，掺杂第一导电型单晶硅线阵列的两个侧壁，形成具有与第一导电类型相反的第二导电类型的杂质的单晶硅线图案，以形成第二导电型沟道，形成用于在第一导电型单晶的两端形成电极的第二导电型焊盘硅线图案，在第一导电型单晶硅线图案的未掺杂区域中形成第一电极，用于施加反向偏置电压以使第一导电型单晶硅线图案和第二导电型并且形成用于在第二导通型通道上施加偏置电压的第二电极导电型垫。

3. 发明申请

WO2009069868A1 GAS ADSORPTION MEDIUM AND GAS ADSORPTION PUMP APPARATUS USING THE SAME 审中-公开
标题翻译：气体吸收介质和气体吸附泵设备
公开(公告)号：WO2009069868A1
公开(公告)日：2009-06-04
申请号：PCT/KR2008/003053
申请日：2008-05-30
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE , YU, Han Young , KIM, Byung Hoon , KIM, Yark Yeon
发明人： YU, Han Young , KIM, Byung Hoon , KIM, Yark Yeon
IPC分类号： B01J20/28
CPC分类号： B01J20/28007 , B01D53/02 , B01D2253/112 , B01D2253/34 , B01D2256/16 , B01J20/02 , B01J20/0214 , B01J20/0233 , B01J20/0237 , B01J20/024 , B01J20/0244 , B01J20/0248 , B01J20/0251 , B01J20/0259 , B01J20/0262 , B01J20/0285 , B01J20/0288 , B01J20/06 , B01J20/08 , B01J20/261 , B01J20/262 , B01J20/28052 , B01J20/3225 , B01J20/3248 , B01J20/3257 , B01J2220/46 , B82Y30/00 , B82Y40/00 , C01B3/001 , C01B3/0015 , C01B3/0084 , Y02E60/328
摘要： A gas adsorption medium and an adsorption pump apparatus having the same are provided. The gas adsorption medium includes a multi-layered structure of which the layers formed of a material are spaced apart from each other, wherein an ion valence of the material is variable and the material includes extra electrons not participating in a chemical bond, and the adsorption pump apparatus includes the gas adsorption medium as described above. The gas adsorption medium can secure a large surface area by securing a space between the layers so that efficiency of the gas adsorption ability can be enhanced.
摘要翻译：提供了一种气体吸附介质和具有该气体吸附介质的吸附泵装置。气体吸附介质包括由材料形成的层彼此间隔开的多层结构，其中材料的离子价可变，并且材料包括不参与化学键的额外电子，并且吸附泵装置包括如上所述的气体吸附介质。气体吸附介质可以通过确保层之间的空间来确保大的表面积，从而可以提高气体吸附能力的效率。

4. 发明申请

WO2008069477A1 BIOSENSOR AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：生物传感器及其制造方法
公开(公告)号：WO2008069477A1
公开(公告)日：2008-06-12
申请号：PCT/KR2007/005908
申请日：2007-11-22
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE , AHN, Chang-Geun , LEE, Seongjae , YANG, Jong-Heon , BAEK, In-Bok , YU, Han-Young , AH, Chil-Seong , KIM, Ansoon , PARK, Chan-Woo , PARK, Seon-Hee , ZYUNG, Taehyoung
发明人： AHN, Chang-Geun , LEE, Seongjae , YANG, Jong-Heon , BAEK, In-Bok , YU, Han-Young , AH, Chil-Seong , KIM, Ansoon , PARK, Chan-Woo , PARK, Seon-Hee , ZYUNG, Taehyoung
IPC分类号： G01N33/48 , G01N33/50
CPC分类号： G01N33/5438 , G01N27/4145
摘要： Provided is a biosensor which can detect a specific biomaterial by an interaction between target molecules and probe molecules, and a manufacturing method thereof. The biosensor includes: a first conductive semiconductor substrate; a second conductive doping layer formed on the semiconductor substrate; an electrode formed on top of both opposite ends of the doping layer; and probe molecules immobilized on the doping layer.
摘要翻译：本发明提供能够通过靶分子和探针分子之间的相互作用检测特定生物材料的生物传感器及其制造方法。生物传感器包括：第一导电半导体衬底; 形成在所述半导体衬底上的第二导电掺杂层; 形成在所述掺杂层的两相对端的顶部上的电极; 和固定在掺杂层上的探针分子。

5. 发明申请

WO2008038906A1 BIOSENSOR, MANUFACTURING METHOD THEREOF, AND BIOSENSING APPARATUS INCLUDING THE SAME 审中-公开
标题翻译：生物传感器，其制造方法和包括其的生物传感装置
公开(公告)号：WO2008038906A1
公开(公告)日：2008-04-03
申请号：PCT/KR2007/004191
申请日：2007-08-30
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE , YU, Han-Young , KIM, An-Soon , AH, Chil-Seong , YANG, Jong-Heon , BAEK, In-Bok , AHN, Chang-Geun , LEE, Seong-Jae , YUN, Jin-Ho
发明人： YU, Han-Young , KIM, An-Soon , AH, Chil-Seong , YANG, Jong-Heon , BAEK, In-Bok , AHN, Chang-Geun , LEE, Seong-Jae , YUN, Jin-Ho
IPC分类号： G01N33/53 , G01N33/50 , G01N27/00
CPC分类号： G01N33/54366 , B01L3/502707 , B01L2200/12 , B01L2300/0636 , B01L2300/0645 , B01L2300/0887
摘要： Provided is a biosensor with a three-dimensional multi-layered structure, a method for manufacturing the biosensor, and a biosensing apparatus including the biosensor. The biosensing apparatus includes: a chamber having an inlet through which a fluid containing a biomaterial enters and an outlet through which the fluid exits; and a plurality of biosensors inserted and fixed in the chamber. Each biosensor includes: a support unit having a fluid channel through which a fluid containing a biomaterial flows; and a sensing unit disposed on the support unit in such a way that the sensing unit is exposed three-dimensionally in the fluid channel of the support unit, the sensing unit being surface-treated with a reactive material that is to react with the biomaterial flowing through the fluid channel.
摘要翻译：本发明提供具有三维多层结构的生物传感器，生物传感器的制造方法以及包括生物传感器的生物传感装置。所述生物传感装置包括：具有入口的腔室，含有生物材料的流体通过所述入口进入，所述流体通过所述出口流出; 以及插入并固定在所述室中的多个生物传感器。每个生物传感器包括：具有流体通道的支撑单元，含有生物材料的流体通过该流体通道流动; 以及感测单元，其以这样的方式设置在所述支撑单元上，使得所述感测单元在所述支撑单元的流体通道中三维地暴露，所述感测单元用反应性材料进行表面处理，所述反应性材料与所述生物材料流动通过流体通道。

6. 发明申请

WO2009054617A1 THE APPARATUS FOR SURFACE TREATMENT OF BIO-CHEMICAL SENSOR 审中-公开
标题翻译：生物化学传感器表面处理装置
公开(公告)号：WO2009054617A1
公开(公告)日：2009-04-30
申请号：PCT/KR2008/005653
申请日：2008-09-24
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE , YU, Han Young , KIM, An Soon , AH, Chil Seong , YANG, Jong Heon , BAEK, In Bok , AHN, Chang Geun , PARK, Chan Woo , KIM, Byung Hoon , JANG, Moon Gyu
发明人： YU, Han Young , KIM, An Soon , AH, Chil Seong , YANG, Jong Heon , BAEK, In Bok , AHN, Chang Geun , PARK, Chan Woo , KIM, Byung Hoon , JANG, Moon Gyu
IPC分类号： G01N33/48
CPC分类号： B01J19/0046 , B01J2219/00283 , B01J2219/00351 , B01J2219/00475 , B01J2219/00529 , B01J2219/00533 , B01J2219/00596 , B01J2219/00605 , B01J2219/00659 , B01J2219/00691 , B01L9/52
摘要： Provided is an apparatus for automated surface treatment of a biochemical sensor capable of surface treating a chip, which is to be used as the biochemical sensor. The apparatus for surface treatment of a biochemical sensor has at least one treatment region, the treatment region including: at least one vessel for containing one specimen selected from chemical, biochemical, and biological materials, which are to be used for surface treatment on at least one surface of a chip, which is to used as a biochemical sensor; a chip loading means for loading the chip and having a size that can be inserted into the vessel for surface treatment of the chip; and a conveyance frame for alternately inserting the chip loading means into the at least one vessel containing the specimen, and movable along X-, Y-, and Z-axes, which are perpendicular to each other, for surface treatment of the chip, wherein a first coupling part, at which the chip loading means is detachably attached, is installed at a lower end of a Z-axis frame vertically movable along the Z-axis of the conveyance frame. Therefore, the automated apparatus is used for surface treatment of the sensor, without the conventional manual operation, to enable mass production of the sensor.
摘要翻译：本发明提供一种能够对要用作生物化学传感器的芯片进行表面处理的生物化学传感器进行自动表面处理的装置。用于生物化学传感器的表面处理的装置具有至少一个处理区域，所述处理区域包括：用于容纳至少一个用于至少用于表面处理的化学，生物化学和生物材料的一个样品的至少一个容器芯片的一个表面，用作生物化学传感器; 芯片装载装置，用于装载芯片并具有可以插入到容器中以便对芯片进行表面处理的尺寸; 以及输送框架，用于将所述芯片加载装置交替地插入到容纳所述样本的所述至少一个容器中，并且可沿着彼此垂直的X，Y和Z轴移动，用于对所述芯片进行表面处理，其中安装在可沿着输送框架的Z轴可垂直移动的Z轴框架的下端的第一联接部件，其中可拆卸地安装有芯片装载装置。因此，无需传统的手动操作，自动化装置用于传感器的表面处理，以便能够大量生产传感器。

7. 发明申请

WO2009075432A1 DETECTION DEVICE AND SYSTEM 审中-公开
标题翻译：检测装置和系统
公开(公告)号：WO2009075432A1
公开(公告)日：2009-06-18
申请号：PCT/KR2008/003329
申请日：2008-06-13
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE , AHN, Chang Geun , PARK, Chan Woo , YANG, Jong Heon , BAEK, In Bok , AH, Chil Seong , YU, Han Young , KIM, An Soon , KIM, Tae Youb , JANG, Moon Gyu , PARK, Seon Hee
发明人： AHN, Chang Geun , PARK, Chan Woo , YANG, Jong Heon , BAEK, In Bok , AH, Chil Seong , YU, Han Young , KIM, An Soon , KIM, Tae Youb , JANG, Moon Gyu , PARK, Seon Hee
IPC分类号： G01N33/48 , G01N33/20
CPC分类号： G01N27/4145 , Y10T436/11
摘要： A detection device and system are provided. The detection device includes a detection capacitor and a Field Effect Transistor (FET). The detection capacitor has a reactive material layer reacting to a specific functional group in a fluid, and first and second electrodes disposed on the both surfaces of an insulating layer, and the FET has a source electrode connected with the second electrode, a gate electrode connected with the first electrode, and a drain electrode. Here, the insulating layer of the detection capacitor is thicker than a gate insulating layer of the FET.
摘要翻译：提供检测装置和系统。检测装置包括检测电容器和场效应晶体管（FET）。检测电容器具有与流体中的特定官能团反应的反应性物质层，以及设置在绝缘层两面的第一和第二电极，并且所述FET具有与所述第二电极连接的源电极，连接有栅电极与第一电极和漏电极。这里，检测电容器的绝缘层比FET的栅极绝缘层厚。

8. 发明申请

WO2008069377A1 METHOD FOR SELECTIVELY FUNCTIONALIZING NON-MODIFIED SOLID SURFACE AND METHOD FOR IMMOBILIZING ACTIVE MATERIAL ON THE FUNCTIONALIZED SOLID SURFACE 审中-公开
标题翻译：用于选择性地功能化非改性固体表面的方法和在功能化固体表面上固定活性材料的方法
公开(公告)号：WO2008069377A1
公开(公告)日：2008-06-12
申请号：PCT/KR2007/002356
申请日：2007-05-14
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE , KIM, An-Soon , YU, Han-Young , BAEK, In-Bok , YANG, Jong-Heon , AHN, Chang-Geun , PARK, Chan-Woo , LEE, Seong-Jae , AH, Chil-Seong
发明人： KIM, An-Soon , YU, Han-Young , BAEK, In-Bok , YANG, Jong-Heon , AHN, Chang-Geun , PARK, Chan-Woo , LEE, Seong-Jae , AH, Chil-Seong
IPC分类号： B01J19/00
CPC分类号： G01N33/54353 , B01J2219/00497
摘要： Provided is a method for selectively functionalizing unmodified solid surface, not oxidized and nitrified, into an aldehyde group, and a method for immobilizing an active material such as bio material or functional material on the functionalized aldehyde solid surface through strong and stable chemical bonding. Differently from a conventional method immobilizing deoxyribonucleic acid (DNA) using a cross linker, the method of the present invention does not require a cross linker reaction step to thereby shorten a process. Also, since a cross linker is absent, the monomolecular layer on the surface of a device i s thin, which reduces a perturbation effect by molecular layer. This is useful in fabrication of molecular electronic devices and bio- active devices. In addition, since the bio material or functional material is selectively immobilized only on the unmodified surface, the present invention can functionalize only a specific solid surface and develop a highly sensitive sensor and an improved functional device.
摘要翻译：提供了将未改性的固体表面官能化而未被氧化并硝化成醛基的方法，以及通过强力稳定的化学键将活性物质如生物材料或功能材料固定在官能化的醛固体表面上的方法。与使用交联剂固定脱氧核糖核酸（DNA）的常规方法不同，本发明的方法不需要交联反应步骤，从而缩短了工艺。此外，由于不存在交联剂，所以器件表面上的单分子层薄，这降低了分子层的扰动效应。这在分子电子器件和生物活性器件的制造中是有用的。此外，由于生物材料或功能材料仅选择性地固定在未改性的表面上，所以本发明只能使特定的固体表面官能化，并开发出高灵敏度的传感器和改进的功能元件。

9. 发明申请

WO2007066937A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：WO2007066937A1
公开(公告)日：2007-06-14
申请号：PCT/KR2006/005173
申请日：2006-12-04
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE , BAEK, In Bok , LEE, Seong Jae , YANG, Jong Heon , AHN, Chang Geun , YU, Han Young , IM, Ki Ju
发明人： BAEK, In Bok , LEE, Seong Jae , YANG, Jong Heon , AHN, Chang Geun , YU, Han Young , IM, Ki Ju
IPC分类号： H01L21/336
CPC分类号： H01L29/66439 , B82Y10/00 , H01L21/0273 , H01L21/28123 , H01L29/66484 , H01L29/66545 , H01L29/66575 , H01L29/66772 , H01L29/7613 , H01L29/7831
摘要： Provided is a method of manufacturing a semiconductor device in which properties of photoresist through a lithography process are changed to form a dummy structure, and the structure is applied to a process of forming a gate electrode. The method includes the steps of: forming a buffer layer on the top of a semiconductor substrate; applying an inorganic photoresist on the buffer layer, and forming a photoresist pattern using a lithography process; thermally treating the photoresist pattern using a predetermined gas; uniformly depositing an insulating layer on the thermally treated structure, and etching the deposited layer by the deposited thickness in order to expose the thermally treated photoresist pattern; depositing an insulating layer on the etched structure, and etching the deposited insulating layer to expose the thermally treated photoresist pattern; removing the exposed photoresist pattern using an etching process; forming a gate oxide layer in the portion in which the photoresist pattern is removed; and forming a gate electrode on the gate oxide layer. Accordingly, in forming a structure for manufacturing a nano-sized device, the properties of the layer formed by a lithography process are improved through thermal treatment, and thus the structure used to manufacture various devices can be easily formed.
摘要翻译：提供了通过光刻处理改变光致抗蚀剂的特性以形成虚拟结构的半导体器件的制造方法，并且将该结构应用于形成栅电极的工艺。该方法包括以下步骤：在半导体衬底的顶部上形成缓冲层; 在缓冲层上施加无机光致抗蚀剂，并使用光刻工艺形成光致抗蚀剂图案; 使用预定气体热处理光刻胶图案; 在热处理结构上均匀沉积绝缘层，并通过沉积的厚度蚀刻沉积层，以暴露热处理的光致抗蚀剂图案; 在蚀刻的结构上沉积绝缘层，并蚀刻沉积的绝缘层以暴露经热处理的光致抗蚀剂图案; 使用蚀刻工艺去除曝光的光致抗蚀剂图案; 在除去光致抗蚀剂图案的部分中形成栅氧化层; 以及在所述栅极氧化物层上形成栅电极。因此，在形成纳米尺寸器件的制造结构时，通过热处理提高了通过光刻工艺形成的层的性质，因此可以容易地形成用于制造各种器件的结构。

10. 发明申请

WO2010016643A1 METHOD AND APPARATUS FOR MEASURING ISOELECTRIC POINT USING FIELD EFFECT TRANSISTOR 审中-公开
标题翻译：使用场效应晶体管测量电压点的方法和装置
公开(公告)号：WO2010016643A1
公开(公告)日：2010-02-11
申请号：PCT/KR2008/007452
申请日：2008-12-16
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE , AH, Chil-Seong , KIM, Ansoon , PARK, Chan-Woo , AHN, Chang-Geun , YANG, Jong-Heon , BAEK, In-Bok , KIM, Taeyoub , SUNG, Gun-Yong , PARK, Seon-Hee , YU, Han-Young
发明人： AH, Chil-Seong , KIM, Ansoon , PARK, Chan-Woo , AHN, Chang-Geun , YANG, Jong-Heon , BAEK, In-Bok , KIM, Taeyoub , SUNG, Gun-Yong , PARK, Seon-Hee , YU, Han-Young
IPC分类号： G01N27/00
CPC分类号： G01N27/4145
摘要： Provided are a method and apparatus for measuring an isoelectric point using a field effect transistor. The method includes providing a field effect transistor including a substrate, source and drain electrodes disposed on the substrate and spaced apart from each other, and a channel region between the source and drain electrodes, providing a first electrolyte solution having a first concentration to the channel region of the field effect transistor and measuring a first current value of the channel region between the source and drain electrodes, providing a second electrolyte solution having a second concentration greater than the first concentration and measuring a second current value of the channel region between the source and drain electrodes, and determining the isoelectric point of the field effect transistor or a material disposed on the field effect transistor using a difference between the first and second current values.
摘要翻译：提供了使用场效应晶体管测量等电点的方法和装置。该方法包括提供场效应晶体管，该场效应晶体管包括衬底，设置在衬底上的源电极和漏电极并彼此间隔开，以及源电极和漏电极之间的沟道区域，提供具有第一浓度至沟道的第一电解质溶液区域，并且测量源极和漏极之间的沟道区的第一电流值，提供具有大于第一浓度的第二浓度的第二电解质溶液，并测量源极之间的沟道区的第二电流值和漏电极，并且使用第一和第二电流值之间的差来确定场效应晶体管的等电点或设置在场效应晶体管上的材料。

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