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1. 发明申请

WO1992005585A1 DISTORTION SENSOR 审中-公开
标题翻译：失真传感器
公开(公告)号：WO1992005585A1
公开(公告)日：1992-04-02
申请号：PCT/JP1988000320
申请日：1988-03-30
申请人： TAWADA, Yoshihisa , YAMAGUCHI, Minori , HOSOKAWA, Yoichi , ZENKI, Tomoyoshi
IPC分类号： H01L29/84
CPC分类号： G01L1/2293
摘要： A distortion sensor for detecting distortion by utilizing a correlation with the electric resistance of a non-single-crystal semiconductor containing silicon. The distortion sensor of the invention is composed of a non-single-crystal semiconductor, including silicon, whose activation energy of dark conductivity is smaller than 15meV. The distortion sensor of the invention can be used for measuring distortion even under the conditions of a relatively great magnetic field.
摘要翻译：一种用于通过利用与含有硅的非单晶半导体的电阻的相关性来检测失真的失真传感器。本发明的失真传感器由包含硅的非单晶半导体构成，其黑暗电导率的活化能小于15meV。本发明的失真传感器即使在较大磁场的条件下也可用于测量失真。

2. 发明申请

WO1993026046A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：WO1993026046A1
公开(公告)日：1993-12-23
申请号：PCT/JP1993000794
申请日：1993-06-14
申请人： KANEGAFUCHI KAGAKU KOGYO KABUSHIKI KAISHA , KURATA, Sin-ichiro , KOBAYASHI, Kenji , ZENKI, Tomoyoshi
发明人： KANEGAFUCHI KAGAKU KOGYO KABUSHIKI KAISHA
IPC分类号： H01L27/146
CPC分类号： H01L27/14643
摘要： A semiconductor device for an original reader having a switching element such as a diode, an optical sensor element comprising a photoelectric conversion element and a switching element, and a switching element used in an image reader for inputting image information in a facsimile apparatus, an image scanner, and the like. In a semiconductor device (90) provided with a semiconductor element (blocking diode) (94) having a switching function and comprising a lower electrode (94a), a semiconductor layer (94b), an upper electrode (94c), all of which are formed vertically in this order; at least either one of the lower electrode (94a) and the upper electrode (94c) consists of one or more layers, and out of the conductive layers at least the one which is in contact with the semiconductor layer (94b) is transparent. An optical sensor element and an original document reader according to the present invention employ such semiconductor devices having switching function. In such a semiconductor device thus structured, the reverse direction current involved in switching elements such as blocking diodes and in optical sensor elements can be reduced, making it possible to enhance the switching speed, and to obtain exact signal output from the optical sensor element. Further, in an original document reader having these switching elements or optical sensor elements, inverted residual images can be reduced, and at the same time, the reading can be executed at a higher speed.
摘要翻译：一种用于具有诸如二极管的开关元件的原始读取器的半导体器件，包括光电转换元件和开关元件的光学传感器元件，以及用于在传真设备中输入图像信息的图像读取器中的开关元件，图像扫描仪等。在具有切换功能的半导体元件（阻挡二极管）（94）的半导体器件（90）中，包括下电极（94a），半导体层（94b），上电极（94c）按此顺序垂直形成; 下电极（94a）和上电极（94c）中的至少一个由一层或多层组成，并且至少与半导体层（94b）接触的导电层中的导电层中的至少一个是透明的。根据本发明的光学传感器元件和原稿读取器采用具有开关功能的这种半导体器件。在这样构成的这样的半导体装置中，可以减少诸如阻挡二极管和光学传感器元件的开关元件中所涉及的反向电流，从而可以提高开关速度，并获得从光学传感器元件输出的精确信号。此外，在具有这些开关元件或光学传感器元件的原稿读取器中，可以减少反转的残留图像，同时可以以更高的速度执行读取。

3. 发明申请

WO1989006439A1 SOLAR CELL ARRAY FOR DRIVING MOSFET GATES 审中-公开
标题翻译：用于驱动MOSFET栅极的太阳能电池阵列
公开(公告)号：WO1989006439A1
公开(公告)日：1989-07-13
申请号：PCT/JP1988001330
申请日：1988-12-26
申请人： KANEGAFUCHI KAGAKU KOGYO KABUSHIKI KAISHA , MURAKAMI, Satoru , YOSHIDA, Eiichi , ZENKI, Tomoyoshi , YAMAGUCHI, Minori , NAKAYAMA, Takehisa , TAWADA, Yoshihisa
发明人： KANEGAFUCHI KAGAKU KOGYO KABUSHIKI KAISHA
IPC分类号： H01L21/66
CPC分类号： H01L31/076 , H01L31/046 , H01L31/0465 , H03K17/78 , H03K17/785 , Y02E10/548
摘要： A solar cell array for producing electromotive force in response to incident light to drive MOSFET gates for use as a semiconductor relay. The manufacture of a crystalline silicon semiconductor used as a solar cell for the semiconductor relay requires too many mask patterns and complicated processes. This involves difficulties in device integration and thin-film formation, resulting in an increase in the cost. The invention provides a solar cell wherein a great number of semiconductor cells of amorphous silicon are connected in series to drive MOSFET gates.

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