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    • 3. 发明申请
    • METHODS FOR RECESS ETCHING
    • 记忆蚀刻方法
    • WO2008076812A2
    • 2008-06-26
    • PCT/US2007/087408
    • 2007-12-13
    • APPLIED MATERIALS, INC.SHEN, MeihuaCHEN, RongWILLIAMS, Scott M.
    • SHEN, MeihuaCHEN, RongWILLIAMS, Scott M.
    • H01L21/311
    • H01L21/3065H01L21/30655H01L29/66636H01L29/7848
    • Methods for recess etching are provided herein that advantageously improve lateral to vertical etch ratio requirements, thereby enabling deeper recess etching while maintaining relatively shallow vertical etch depths. Such enhanced lateral etch methods advantageously provide benefits for numerous applications where lateral to vertical etch depth ratios are constrained or where recesses or cavities are desired to be formed. In some embodiments, a method of recess etching includes providing a substrate having a structure formed thereon; forming a recess in the substrate at least partially beneath the structure using a first etch process; forming a selective passivation layer on the substrate; and extending the recess in the substrate using a second etch process. The selective passivation layer is generally formed on regions of the substrate adjacent to the structure but generally not within the recess. The first and second etch processes may be the same or different.
    • 本文提供凹槽蚀刻的方法,其有利地提高了横向垂直蚀刻比要求,从而实现更深的凹槽蚀刻,同时保持较浅的垂直蚀刻深度。 这种增强的横向蚀刻方法有利地为许多应用提供了优点,其中横向到垂直蚀刻深度比被约束或者需要形成凹部或空腔。 在一些实施例中,凹陷蚀刻的方法包括提供其上形成有结构的基板; 使用第一蚀刻工艺在所述结构的至少部分下方在所述衬底中形成凹部; 在衬底上形成选择性钝化层; 以及使用第二蚀刻工艺在所述衬底中延伸所述凹部。 选择性钝化层通常形成在与结构相邻的基底的区域上,但通常不在凹部内。 第一和第二蚀刻工艺可以相同或不同。