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1. 发明申请

WO2008025057A1 THIN-FILM DIODE STRUCTURE USING A SACRIFICIAL DOPED DIELECTRIC LAYER 审中-公开
标题翻译：薄膜电介质薄膜的薄膜二极管结构
公开(公告)号：WO2008025057A1
公开(公告)日：2008-03-06
申请号：PCT/AU2007/001205
申请日：2007-08-22
申请人： NEWSOUTH INNOVATIONS PTY LIMITED , WIDENBORG, Per, Ingemar , ABERLE, Armin, Gerhard
发明人： WIDENBORG, Per, Ingemar , ABERLE, Armin, Gerhard
IPC分类号： H01L31/0392 , H01L21/22 , H01L21/324 , H01L21/328 , H01L23/15 , H01L31/18 , H01L31/20
CPC分类号： H01L29/868 , H01L21/02532 , H01L21/02672 , H01L21/268 , H01L29/66113 , H01L31/0392 , H01L31/077 , H01L31/1872 , Y02E10/50 , Y02P70/521
摘要： A method of fabricating a thin-film crystalline semiconductor 3-layer diode structure on a foreign supporting substrate or superstrate, and a thin-film crystalline semiconductor 3-layer diode structure on a foreign supporting substrate or superstrate are disclosed. A sacrificial dielectric overlayer (15) containing n or p-type dopant atoms is deposited on an exposed amorphous lightly doped or undoped semiconductor layer of a 2-layer semiconductor structure (13, 14) formed on the substrate or superstrate (11 ). The amorphous lightly doped or undoped semiconductor layer (13, 14) is crystalised. A heavily doped semiconductor layer is formed by diffusing the n or p-type atoms from the sacrificial dielectric overlayer into a portion of the crystallised lightly doped or undoped semiconductor layer, whereby the 3-layer diode structure (21) is formed. The sacrificial dielectric overlayer (15) is removed from the 3-layer diode structure.
摘要翻译：公开了一种在外部支撑衬底或衬底上制造薄膜晶体半导体3层二极管结构的方法和在外部支撑衬底或衬底上的薄膜结晶半导体3层二极管结构。包含n或p型掺杂剂原子的牺牲电介质覆盖层（15）沉积在形成在衬底或覆层（11）上的2层半导体结构（13,14）的暴露的非晶体轻掺杂或未掺杂的半导体层上。非晶态轻掺杂或未掺杂的半导体层（13,14）被结晶化。通过将n或p型原子从牺牲电介质覆盖层扩散到结晶的轻掺杂或未掺杂半导体层的一部分中而形成重掺杂半导体层，由此形成3层二极管结构（21）。从3层二极管结构去除牺牲介电层（15）。

2. 发明申请

WO2004089841A1 GLASS TEXTURING 审中-公开
标题翻译：玻璃纹理
公开(公告)号：WO2004089841A1
公开(公告)日：2004-10-21
申请号：PCT/AU2004/000339
申请日：2004-03-19
申请人： UNISEARCH LIMITED , ABERLE, Armin, Gerhard , WIDENBORG, Per, Ingemar , CHUANGSUWANICH, Natapol
发明人： ABERLE, Armin, Gerhard , WIDENBORG, Per, Ingemar , CHUANGSUWANICH, Natapol
IPC分类号： C03C15/00
CPC分类号： C03C17/36 , C03C17/09 , C03C17/22 , C03C17/3435 , C03C17/3482 , C03C17/3607 , C03C17/3626 , C03C17/3636 , C03C17/3649 , C03C17/3678 , C03C2204/08 , C03C2217/252 , C03C2217/282 , C03C2218/151 , C03C2218/153 , C03C2218/32 , C03C2218/33 , C03C2218/355 , C03C2218/365 , H01L31/02366 , Y02E10/50 , Y10T428/315
摘要： A method of texturing a glass surface is disclosed, the method comprising the steps of coating the glass surface with a material film, stimulating a reaction at the interface between the glass and the material film resulting in the formation of reaction products at the interface, and removing the material film and the reaction products from the glass surface. In a preferred embodiment, an aluminium film around 500nm thick aluminosilicate is coated onto the glass and the stimulation is by heating. The aluminium reacts with the silica at temperatures between 500°C and 630°C to form reaction products that are then removed, along with the film, by etching with phosphoric acid. A further etch using HF/HNO 3 may also be employed. The method is particularly useful in etching glass substrates intended for use in photovoltaic devices.
摘要翻译：公开了一种纹理化玻璃表面的方法，该方法包括以下步骤：用玻璃表面涂覆材料膜，在玻璃和材料膜之间的界面处刺激反应，从而在界面处形成反应产物;以及从玻璃表面去除材料膜和反应产物。在优选的实施方案中，将约500nm厚的铝硅酸盐的铝膜涂覆到玻璃上，并通过加热进行刺激。铝在500℃至630℃的温度下与二氧化硅反应形成反应产物，然后通过用磷酸蚀刻与膜一起除去。还可以使用使用HF / HNO 3的另外的蚀刻。该方法在蚀刻用于光伏器件的玻璃衬底中特别有用。

3. 发明申请

WO2009154575A1 THIN-FILM SOLAR CELL INTERCONNECTION 审中-公开
标题翻译：薄膜太阳能电池互连
公开(公告)号：WO2009154575A1
公开(公告)日：2009-12-23
申请号：PCT/SG2009/000213
申请日：2009-06-16
申请人： ABERLE, Armin, Gerhard , WIDENBORG, Per, Ingemar , GRESS, Peter, Jaroslav
发明人： ABERLE, Armin, Gerhard , WIDENBORG, Per, Ingemar , GRESS, Peter, Jaroslav
IPC分类号： H01L31/05
CPC分类号： H01L31/0504 , H01L31/0201 , H01L31/022441 , H01L31/0682 , Y02E10/547
摘要： A thin-film solar cell module, and a method of interconnecting two or more thin-film solar cells on a foreign supporting substrate. The method comprises the step of wire-bonding an air-side electrode of one thin-film solar cell to a substrate-side electrode of an adjacent solar cell, such that said thin-film solar cells are connected in series.
摘要翻译：薄膜太阳能电池模块以及在外部支撑基板上互连两个以上的薄膜太阳能电池的方法。该方法包括将一个薄膜太阳能电池的空气侧电极与相邻的太阳能电池的基板侧电极导线接合的步骤，使得所述薄膜太阳能电池串联连接。

4. 发明申请

WO2004033769A1 FABRICATION METHOD FOR CRYSTALLINE SEMICONDUCTOR FILMS ON FOREIGN SUBSTRATES 审中-公开
标题翻译：外部衬底上的晶体半导体膜的制造方法
公开(公告)号：WO2004033769A1
公开(公告)日：2004-04-22
申请号：PCT/AU2003/001313
申请日：2003-10-07
申请人： UNISEARCH LIMITED , ABERLE, Armin , WIDENBORG, Per , STRAUB, Axel , NEUHAUS, Dirk-Holger , HARTLEY, Oliver , HARDER, Nils-Peter
发明人： ABERLE, Armin , WIDENBORG, Per , STRAUB, Axel , NEUHAUS, Dirk-Holger , HARTLEY, Oliver , HARDER, Nils-Peter
IPC分类号： C30B28/02
CPC分类号： H01L21/2022 , H01L31/182 , Y02E10/546 , Y02P70/521
摘要： The invention provides a method of forming a polycrystalline semiconductor film (26) on a supporting substrate (21, 22) of foreign material. The method involves depositing a metal film (23) onto the substrate, forming a film of metal oxide and/or hydroxide (24) on a surface of the metal, and forming a layer of an amorphous semiconductor material (25) over a surface of the metal oxide and/or hydroxide film. The entire sample is then heated to a temperature at which the semiconductor layer is absorbed into the metal layer and deposited as a polycrystalline layer (26) onto the target surface by metal-induced crystallisation. The metal is left as an overlayer (27) covering the deposited polycrystalline layer, with semiconductor inclusions (28) in the metal layer (29). The polycrystalline semiconductor film (26) and the overlayer (27) are separated by a porous interfacial metal oxide and/or hydroxide film (30). The metal in the overlayer and the interfacial metal oxide and/or hydroxide film are then removed with an etch which underetches the semiconductor inclusions to form freestanding islands. Finally the freestanding semiconductor "islands" are removed from the surface of the polycrystalline semiconductor layer by a lift-off process. There is also provided a method for the formation of a further polycrystalline layer using a polycrystalline layer as a seed layer. The seed layer may be a polycrystalline semiconductor layer formed by the metal induced crystallisation method. The surface of the seed layer is first cleaned to remove any oxides or other contaminants, before forming an amorphous layer of a semiconductor material over the cleaned surface of the seed layer, and heating the substrate, the seed layer and the amorphous layer to crystallise the semiconductor material by solid phase epitaxy.
摘要翻译：本发明提供了在异物的支撑基板（21,22）上形成多晶半导体膜（26）的方法。该方法包括在衬底上沉积金属膜（23），在金属表面上形成金属氧化物和/或氢氧化物（24）的膜，并在该表面上形成非晶半导体材料层（25）金属氧化物和/或氢氧化物膜。然后将整个样品加热到半导体层被吸收到金属层中并通过金属诱导结晶作为多晶层（26）沉积到目标表面上的温度。留下金属作为覆盖沉积的多晶层的覆盖层（27），在金属层（29）中具有半导体夹杂物（28）。多晶半导体膜（26）和覆层（27）被多孔界面金属氧化物和/或氢氧化物膜（30）分离。然后用蚀刻去除覆盖层中的金属和界面金属氧化物和/或氢氧化物膜，该蚀刻不影响半导体夹杂物以形成独立的岛。最后，通过剥离工艺从多晶半导体层的表面去除独立的半导体“岛”。还提供了使用多晶层作为种子层形成另外的多晶层的方法。种子层可以是通过金属诱导结晶法形成的多晶半导体层。在种子层的清洁表面上形成半导体材料的非晶层之前，首先清洗种子层的表面以去除任何氧化物或其它污染物，以及加热衬底，籽晶层和非晶层，使结晶半导体材料通过固相外延生长。

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