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    • 4. 发明申请
    • FABRICATION METHOD FOR CRYSTALLINE SEMICONDUCTOR FILMS ON FOREIGN SUBSTRATES
    • 外部衬底上的晶体半导体膜的制造方法
    • WO2004033769A1
    • 2004-04-22
    • PCT/AU2003/001313
    • 2003-10-07
    • UNISEARCH LIMITEDABERLE, ArminWIDENBORG, PerSTRAUB, AxelNEUHAUS, Dirk-HolgerHARTLEY, OliverHARDER, Nils-Peter
    • ABERLE, ArminWIDENBORG, PerSTRAUB, AxelNEUHAUS, Dirk-HolgerHARTLEY, OliverHARDER, Nils-Peter
    • C30B28/02
    • H01L21/2022H01L31/182Y02E10/546Y02P70/521
    • The invention provides a method of forming a polycrystalline semiconductor film (26) on a supporting substrate (21, 22) of foreign material. The method involves depositing a metal film (23) onto the substrate, forming a film of metal oxide and/or hydroxide (24) on a surface of the metal, and forming a layer of an amorphous semiconductor material (25) over a surface of the metal oxide and/or hydroxide film. The entire sample is then heated to a temperature at which the semiconductor layer is absorbed into the metal layer and deposited as a polycrystalline layer (26) onto the target surface by metal-induced crystallisation. The metal is left as an overlayer (27) covering the deposited polycrystalline layer, with semiconductor inclusions (28) in the metal layer (29). The polycrystalline semiconductor film (26) and the overlayer (27) are separated by a porous interfacial metal oxide and/or hydroxide film (30). The metal in the overlayer and the interfacial metal oxide and/or hydroxide film are then removed with an etch which underetches the semiconductor inclusions to form freestanding islands. Finally the freestanding semiconductor "islands" are removed from the surface of the polycrystalline semiconductor layer by a lift-off process. There is also provided a method for the formation of a further polycrystalline layer using a polycrystalline layer as a seed layer. The seed layer may be a polycrystalline semiconductor layer formed by the metal induced crystallisation method. The surface of the seed layer is first cleaned to remove any oxides or other contaminants, before forming an amorphous layer of a semiconductor material over the cleaned surface of the seed layer, and heating the substrate, the seed layer and the amorphous layer to crystallise the semiconductor material by solid phase epitaxy.
    • 本发明提供了在异物的支撑基板(21,22)上形成多晶半导体膜(26)的方法。 该方法包括在衬底上沉积金属膜(23),在金属表面上形成金属氧化物和/或氢氧化物(24)的膜,并在该表面上形成非晶半导体材料层(25) 金属氧化物和/或氢氧化物膜。 然后将整个样品加热到半导体层被吸收到金属层中并通过金属诱导结晶作为多晶层(26)沉积到目标表面上的温度。 留下金属作为覆盖沉积的多晶层的覆盖层(27),在金属层(29)中具有半导体夹杂物(28)。 多晶半导体膜(26)和覆层(27)被多孔界面金属氧化物和/或氢氧化物膜(30)分离。 然后用蚀刻去除覆盖层中的金属和界面金属氧化物和/或氢氧化物膜,该蚀刻不影响半导体夹杂物以形成独立的岛。 最后,通过剥离工艺从多晶半导体层的表面去除独立的半导体“岛”。 还提供了使用多晶层作为种子层形成另外的多晶层的方法。 种子层可以是通过金属诱导结晶法形成的多晶半导体层。 在种子层的清洁表面上形成半导体材料的非晶层之前,首先清洗种子层的表面以去除任何氧化物或其它污染物,以及加热衬底,籽晶层和非晶层,使结晶 半导体材料通过固相外延生长。