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1. 发明申请

WO2008147392A2 INTERMEDIATE-BAND PHOTOSENSITIVE DEVICE WITH QUANTUM DOTS EMBEDDED IN ENERGY FENCE BARRIER 审中-公开
标题翻译：具有嵌入式能量屏障的量子点的中间带感光器件
公开(公告)号：WO2008147392A2
公开(公告)日：2008-12-04
申请号：PCT/US2007023447
申请日：2007-11-06
申请人： UNIV PRINCETON , UNIV MICHIGAN , FORREST STEPHEN R , WEI GUODAN
发明人： FORREST STEPHEN R , WEI GUODAN
IPC分类号： H01L31/052
CPC分类号： H01L31/035236 , B82Y10/00 , B82Y15/00 , B82Y20/00 , H01L31/09 , H01L31/18
摘要： A plurality of layers of a first semiconductor material and a plurality of dots-in-a-fence barriers disposed in a stack between a first electrode and a second electrode. Each dots-in-a- fence barrier consists essentially of a plurality of quantum dots of a second semiconductor material embedded between and in direct contact with two layers of a third semiconductor material. Wave functions of the quantum dots overlap as at least one intermediate band. The layers of the third semiconductor material are arranged as tunneling barriers to require a first electron and/or a first hole in a layer of the first material to perform quantum mechanical tunneling to reach the second material within a respective quantum dot, and to require a second electron and/or a second hole in a layer of the first semiconductor material to perform quantum mechanical tunneling to reach another layer of the first semiconductor material.
摘要翻译：多层第一半导体材料和多个点阵栅栏栅栏布置在第一电极和第二电极之间的堆叠中。每个栅栏围栏屏障基本上由第二半导体材料的多个量子点组成，该第二半导体材料嵌入在与第三半导体材料的两层直接接触之间。量子点的波函数作为至少一个中间带重叠。第三半导体材料的层被布置为隧道势垒，以在第一材料的层中需要第一电子和/或第一孔，以进行量子力学隧道以在相应量子点内到达第二材料，并且要求在第一半导体材料的层中的第二电子和/或第二孔，以进行量子力学隧道以到达第一半导体材料的另一层。

2. 发明申请

WO2010036963A1 ORGANIC TANDEM SOLAR CELLS 审中-公开
标题翻译：有机TANDEM太阳能电池
公开(公告)号：WO2010036963A1
公开(公告)日：2010-04-01
申请号：PCT/US2009/058481
申请日：2009-09-25
申请人： THE REGENTS OF THE UNIVERSITY OF MICHIGAN , FORREST, Stephen, R. , LASSITER, Brian, E. , WEI, Guodan
发明人： FORREST, Stephen, R. , LASSITER, Brian, E. , WEI, Guodan
IPC分类号： H01L51/42 , H01L27/30
CPC分类号： H01L27/302 , B82Y10/00 , H01L51/0046 , H01L51/0053 , H01L51/0078 , H01L51/4246 , H01L51/4253 , H01L2251/308 , Y02E10/549 , Y02P70/521
摘要： There is disclosed an organic photovoltaic device comprising two or more organic photoactive regions located between a first electrode and a second electrode, wherein each of the organic photoactive regions comprise a donor, and an acceptor, and wherein the organic photovoltaic device comprises at least one exciton blocking layer, and at least one charge recombination layer, or charge transfer layer between the two or more photoactive regions. It has been discovered that a high open circuit voltage can been obtained for organic tandem solar cells according to this disclosure. Methods of making and methods of using are also disclosed.
摘要翻译：公开了一种有机光伏器件，其包括位于第一电极和第二电极之间的两个或更多个有机光活性区域，其中每个有机光活性区域包括供体和受体，并且其中所述有机光伏器件包括至少一个激子阻挡层和至少一个电荷复合层，或两个或更多个光活性区域之间的电荷转移层。已经发现，根据本公开，可以获得用于有机串联太阳能电池的高开路电压。还公开了制备方法和使用方法。

3. 发明申请

WO2012109232A2 ORGANIC PHOTOSENSITIVE DEVICES COMPRISING ARYL SQUARAINES AND METHODS OF MAKING THE SAME 审中-公开
标题翻译：包含ARYL SQUARAIN的有机感光装置及其制造方法
公开(公告)号：WO2012109232A2
公开(公告)日：2012-08-16
申请号：PCT/US2012024131
申请日：2012-02-07
申请人： FORREST STEPHEN R , THOMPSON MARK E , WEI GUODAN , WANG SIYI , HALL LINCOLN , DIEV VIACHESLV V , XIAO XIN
发明人： FORREST STEPHEN R , THOMPSON MARK E , WEI GUODAN , WANG SIYI , HALL LINCOLN , DIEV VIACHESLV V , XIAO XIN
IPC分类号： C09B23/00
CPC分类号： H01L51/0072 , B82Y10/00 , C07C2601/04 , C09B57/007 , C09B57/008 , C09K11/06 , C09K2211/1007 , C09K2211/1011 , C09K2211/1014 , C09K2211/1029 , H01G9/2059 , H01L51/0046 , H01L51/0058 , H01L51/0059 , H01L51/006 , H01L51/0071 , H01L51/4246 , Y02E10/549
摘要： There is disclosed squaraine compounds of formula (I): wherein each of Y1 and Y2 is independently chosen from an optionally substituted amino group and an optionally substituted aryl group. Also described are organic optoelectronic devices comprising a Donor-Acceptor heterojunction that is formed from one or more of the squaraine compounds. A method of making the disclosed device, which may include one or more sublimation step for depositing said squaraine compound, is also disclosed.
摘要翻译：公开了式（I）的方酸化合物：其中Y1和Y2各自独立地选自任选取代的氨基和任选取代的芳基。还描述了包含由一种或多种方酸化合物形成的供体 - 受体异质结的有机光电子器件。还公开了制造所公开的装置的方法，其可以包括用于沉积所述方酸化合物的一个或多个升华步骤。

4. 发明申请

WO2012109232A3 ORGANIC PHOTOSENSITIVE DEVICES COMPRISING ARYL SQUARAINES AND METHODS OF MAKING THE SAME 审中-公开
公开(公告)号：WO2012109232A3
公开(公告)日：2012-08-16
申请号：PCT/US2012/024131
申请日：2012-02-07
申请人： FORREST, Stephen, R. , THOMPSON, Mark, E. , WEI, Guodan , WANG, Siyi , HALL, Lincoln , DIEV, Viacheslv, V. , XIAO, Xin
发明人： FORREST, Stephen, R. , THOMPSON, Mark, E. , WEI, Guodan , WANG, Siyi , HALL, Lincoln , DIEV, Viacheslv, V. , XIAO, Xin
IPC分类号： C09B23/00 , H01L51/00 , C09B57/00
摘要： There is disclosed squaraine compounds of formula (I): wherein each of Y 1 and Y 2 is independently chosen from an optionally substituted amino group and an optionally substituted aryl group. Also described are organic optoelectronic devices comprising a Donor-Acceptor heterojunction that is formed from one or more of the squaraine compounds. A method of making the disclosed device, which may include one or more sublimation step for depositing said squaraine compound, is also disclosed.

5. 发明申请

WO2008147392A3 INTERMEDIATE-BAND PHOTOSENSITIVE DEVICE WITH QUANTUM DOTS EMBEDDED IN ENERGY FENCE BARRIER 审中-公开
公开(公告)号：WO2008147392A3
公开(公告)日：2008-12-04
申请号：PCT/US2007/023447
申请日：2007-11-06
申请人： THE TRUSTEES OF PRINCETON UNIVERSITY , THE REGENTS OF THE UNIVERSITY OF MICHIGAN , FORREST, Stephen, R. , WEI, Guodan
发明人： FORREST, Stephen, R. , WEI, Guodan
IPC分类号： H01L31/0352 , H01L31/09 , H01L31/18
摘要： A plurality of layers of a first semiconductor material and a plurality of dots-in-a-fence barriers disposed in a stack between a first electrode and a second electrode. Each dots-in-a- fence barrier consists essentially of a plurality of quantum dots of a second semiconductor material embedded between and in direct contact with two layers of a third semiconductor material. Wave functions of the quantum dots overlap as at least one intermediate band. The layers of the third semiconductor material are arranged as tunneling barriers to require a first electron and/or a first hole in a layer of the first material to perform quantum mechanical tunneling to reach the second material within a respective quantum dot, and to require a second electron and/or a second hole in a layer of the first semiconductor material to perform quantum mechanical tunneling to reach another layer of the first semiconductor material.

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