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1. 发明申请

WO2008014982A1 THERMITE WELDING TOOL, CRUCIBLE AND THERMITE WELDING METHODS 审中-公开
标题翻译：高温焊接工具，可焊和热熔焊接方法
公开(公告)号：WO2008014982A1
公开(公告)日：2008-02-07
申请号：PCT/EP2007/006776
申请日：2007-07-31
申请人： FCI , FCI CONNECTORS SNGAPORE PTE LTD , FUNAMIZU, Daisuke , WADA, Kazumi , NISHIJIMA, Hideki
发明人： FUNAMIZU, Daisuke , WADA, Kazumi , NISHIJIMA, Hideki
IPC分类号： B23K23/00 , B60M5/02 , E01B31/00 , H01R4/64 , H01R43/02
CPC分类号： B23K23/00 , B23K2201/26 , B60M5/00
摘要： The present application relates to a thermite welding method comprising a step of inserting a welding lug into a through hole (9) of a thermite tool or crucible (2) and positioning at least a portion (10) of the welding lug inside a hollow portion (8) with a predetermined spacing from the base metal surface; a step of sealing the aperture portion of the hollow portion (8) by the surface of the base metal; a step of pouring melted thermite into the hollow portion (8) to form a welded portion; and a step of destroying at least the portion (6) between the welding lug and the surface of the base metal in the crucible (13) or the welding tool (1). The invention also provides a welding tool (1) and a crucible (2) for performing this method. The invention achieves an increase in the welding area between the surface of the base metal and the welding lug in thermite welding.
摘要翻译：本发明涉及一种铝热焊接方法，其包括将焊接凸耳插入到铝热坩埚（2）的通孔（9）中并将焊接凸缘的至少一部分（10）定位在中空部分（8）与所述母材表面具有预定间隔; 通过贱金属的表面密封中空部分（8）的开口部分的步骤; 将熔融的铝酸盐浇注到中空部分（8）中以形成焊接部分的步骤; 以及至少破坏所述焊接片和所述坩埚（13）或所述焊接工具（1）中的所述母材的表面之间的部分（6）的步骤。本发明还提供一种用于执行该方法的焊接工具（1）和坩埚（2）。本发明在铝热焊接中实现了母材表面与焊接片之间的焊接面积的增加。

2. 发明申请

WO2005020305A3 OPTICAL DEVICE COMPRISING CRYSTALLINE SEMICONDUCTOR LAYER AND REFLECTIVE ELEMENT 审中-公开
标题翻译：包含晶体半导体层和反射元件的光学器件
公开(公告)号：WO2005020305A3
公开(公告)日：2007-11-01
申请号：PCT/US2004026105
申请日：2004-08-12
申请人： MASSACHUSETTS INST TECHNOLOGY , GRAWERT FELIX JAN , AKIYAMA SHOJI , WADA KAZUMI , KAERTNER FRANZ X
发明人： GRAWERT FELIX JAN , AKIYAMA SHOJI , WADA KAZUMI , KAERTNER FRANZ X
IPC分类号： G02F1/21 , G02F1/35 , H01L29/08 , H01L33/10 , H01L33/12
CPC分类号： H01L33/10 , G02F1/3523 , G02F2001/213 , H01L33/12
摘要： An optical semiconductor includes a first semiconductor layer and at least one reflective element that is formed on the semiconductor layer. The at least one reflective element comprises alternating layers of high and low index layers. A crystalline semiconductor layer is formed on the at least one reflective element.
摘要翻译：光学半导体包括形成在半导体层上的第一半导体层和至少一个反射元件。所述至少一个反射元件包括高折射率层和低折射率层的交替层。在所述至少一个反射元件上形成晶体半导体层。

3. 发明申请

WO2020106958A1 AMORPHOUS GERMANIUM WAVEGUIDES FOR SPECTROSCOPIC SENSING AND DATA COMMUNICATION APPLICATIONS 审中-公开
公开(公告)号：WO2020106958A1
公开(公告)日：2020-05-28
申请号：PCT/US2019/062616
申请日：2019-11-21
申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY , POSTELNICU, Eveline , AGGARWAL, Samarth , WADA, Kazumi , MICHEL, Jurgen , KIMERLING, Lionel, C. , CLARK, Michelle, L. , AGARWAL, Anuradha, M.
发明人： POSTELNICU, Eveline , AGGARWAL, Samarth , WADA, Kazumi , MICHEL, Jurgen , KIMERLING, Lionel, C. , CLARK, Michelle, L. , AGARWAL, Anuradha, M.
IPC分类号： C23C14/24 , C23C14/54 , H01L21/02
摘要： A layer of amorphous Ge is formed on a substrate using electron-beam evaporation. The evaporation is performed at room temperature. The layer of amorphous Ge has a thickness of at least 50 nm and a purity of at least 90% Ge. The substrate is complementary metal-oxide- semiconductor (CMOS) compatible and is transparent at Long-Wave Infrared (LWIR) wavelengths. The layer of amorphous Ge can be used as a waveguide in chemical sensing and data communication applications. The amorphous Ge waveguide has a transmission loss in the LWIR of 1l dB/cm or less at 8 μm.

4. 发明申请

WO2005020334A9 HIGH EFFICIENCY TANDEM SOLAR CELLS ON SILICON SUBSTRATES USING ULTRA THIN GERMANIUM BUFFER LAYERS 审中-公开
标题翻译：使用超薄锗缓冲层的硅基板上的高效束带太阳能电池
公开(公告)号：WO2005020334A9
公开(公告)日：2007-03-08
申请号：PCT/US2004027204
申请日：2004-08-20
申请人： MASSACHUSETTS INST TECHNOLOGY , DANIELSON DAVID T , GRAHAM JEREMY , WADA KAZUMI , MONTALBO TRISHA M , KIMERLING LIONEL C
发明人： DANIELSON DAVID T , GRAHAM JEREMY , WADA KAZUMI , MONTALBO TRISHA M , KIMERLING LIONEL C
IPC分类号： H01L31/068 , H01L31/00
CPC分类号： H01L31/0687 , Y02E10/544
摘要： A system is disclosed for providing electrical power responsive to solar energy. The system includes a Si cell, an A1GaAs cell, and a Ge cell. The Si cell is for providing electrical power responsive to solar energy within a first frequency range. The AlGaAs cell is coupled to a first side of the Si cell, and is for providing electrical power responsive to solar energy within a second frequency range. The Ge cell is coupled to a second side of the Si cell, and the Ge cell provides electrical power responsive to solar energy within a third frequency range.
摘要翻译：公开了一种用于提供响应于太阳能的电力的系统。该系统包括Si电池，AlGaAs电池和Ge电池。 Si电池用于响应于第一频率范围内的太阳能提供电力。 AlGaAs单元耦合到Si单元的第一侧，并且用于在第二频率范围内响应于太阳能提供电功率。 Ge电池耦合到Si电池的第二侧，并且Ge电池提供响应于第三频率范围内的太阳能的电功率。

5. 发明申请

WO2005116750A1 PHOTONIC BANDGAP MODULATOR, AMPLIFIER, DEMUX/MUX, AND TDM DEVICES 审中-公开
标题翻译：光电带调制器，放大器，DEMUX / MUX和TDM器件
公开(公告)号：WO2005116750A1
公开(公告)日：2005-12-08
申请号：PCT/US2005/012420
申请日：2005-04-14
申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY , AKIYAMA, Shoji , KIMERLING, Lionel, C. , WADA, Kazumi
发明人： AKIYAMA, Shoji , KIMERLING, Lionel, C. , WADA, Kazumi
IPC分类号： G02F1/21
CPC分类号： G02F1/21 , G02F1/3136 , G02F2001/213 , G02F2202/32
摘要： An optical device includes at least two photonic bandgap crystal (PBG) stacks (152) that are each comprised of alternating layers of high and low index materials. A defect region (156) is formed in a cavity region between the at least two photonic bandgap crystal stacks so as to provide the properties needed to reflect light received by the optical device.
摘要翻译：光学装置包括至少两个光子带隙晶体（PBG）堆叠（152），每个由高和低折射率材料的交替层组成。在所述至少两个光子带隙晶体堆叠之间的空腔区域中形成缺陷区域（156），以提供反射由光学器件接收的光所需的性质。

6. 发明申请

WO2005020305A8 OPTICAL DEVICE COMPRISING CRYSTALLINE SEMICONDUCTOR LAYER AND REFLECTIVE ELEMENT 审中-公开
标题翻译：包含结晶半导体层和反射元件的光学器件
公开(公告)号：WO2005020305A8
公开(公告)日：2005-05-19
申请号：PCT/US2004026105
申请日：2004-08-12
申请人： MASSACHUSETTS INST TECHNOLOGY , GRAWERT FELIX JAN , AKIYAMA SHOJI , WADA KAZUMI , KAERTNER FRANZ X
发明人： GRAWERT FELIX JAN , AKIYAMA SHOJI , WADA KAZUMI , KAERTNER FRANZ X
IPC分类号： G02F1/21 , G02F1/35 , H01L29/08 , H01L33/10 , H01L33/12 , H01L33/00
CPC分类号： H01L33/10 , G02F1/3523 , G02F2001/213 , H01L33/12
摘要： An optical semiconductor includes a first semiconductor layer and at least one reflective element that is formed on the semiconductor layer. The at least one reflective element comprises alternating layers of high and low index layers. A crystalline semiconductor layer is formed on the at least one reflective element.
摘要翻译：光学半导体包括第一半导体层和形成在半导体层上的至少一个反射元件。该至少一个反射元件包括高折射率层和低折射率层的交替层。在至少一个反射元件上形成晶体半导体层。

7. 发明申请

WO2021071573A1 SIMULTANEOUS ELECTRICAL AND OPTICAL CONNECTIONS FOR FLIP CHIP ASSEMBLY 审中-公开
公开(公告)号：WO2021071573A1
公开(公告)日：2021-04-15
申请号：PCT/US2020/045623
申请日：2020-08-10
申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY , KIMERLING, Lionel, C. , MICHEL, Jurgen , AGARWAL, Anuradha, M. , WADA, Kazumi , HU, Juejun , KITA, Derek , WENINGER, Drew, Michael , SERNA, Samuel
发明人： KIMERLING, Lionel, C. , MICHEL, Jurgen , AGARWAL, Anuradha, M. , WADA, Kazumi , HU, Juejun , KITA, Derek , WENINGER, Drew, Michael , SERNA, Samuel
IPC分类号： G02B6/42
摘要： Optical interconnects can offer higher bandwidth, lower power, lower cost, and higher latency than electrical interconnects alone. The optical interconnect system enables both optical and electrical interconnection, leverages existing fabrication processes to facilitate package-level integration, and delivers high alignment tolerance and low coupling losses. The optical interconnect system provides connections between a photonics integrated chip (PIC) and a chip carrier and between the chip carrier and external circuitry. The system provides a single flip chip interconnection between external circuitry and a chip carrier using a ball grid array (BGA) infrastructure. The system uses graded index (GRIN) lenses and cross-taper waveguide couplers to optically couple components, delivers coupling losses of less than 0.5 dB with an alignment tolerance of ± 1 μm, and accommodates a 2.5x higher bandwidth density.

8. 发明申请

WO2005020334A3 HIGH EFFICIENCY TANDEM SOLAR CELLS ON SILICON SUBSTRATES USING ULTRA THIN GERMANIUM BUFFER LAYERS 审中-公开
公开(公告)号：WO2005020334A3
公开(公告)日：2005-03-03
申请号：PCT/US2004/027204
申请日：2004-08-20
申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY , DANIELSON, David, T. , GRAHAM, Jeremy , WADA, Kazumi , MONTALBO, Trisha, M. , KIMERLING, Lionel, C.
发明人： DANIELSON, David, T. , GRAHAM, Jeremy , WADA, Kazumi , MONTALBO, Trisha, M. , KIMERLING, Lionel, C.
IPC分类号： H01L31/068
摘要： A system is disclosed for providing electrical power responsive to solar energy. The system includes a Si cell, an A1GaAs cell, and a Ge cell. The Si cell is for providing electrical power responsive to solar energy within a first frequency range. The AlGaAs cell is coupled to a first side of the Si cell, and is for providing electrical power responsive to solar energy within a second frequency range. The Ge cell is coupled to a second side of the Si cell, and the Ge cell provides electrical power responsive to solar energy within a third frequency range.

9. 发明申请

WO2005019881A1 PROCESS FOR FABRICATION OF HIGH REFLECTORS BY REVERSAL OF LAYER SEQUENCE AND APPLICATION THEREOF 审中-公开
标题翻译：反向层叠序列及其应用制造高反射镜的方法
公开(公告)号：WO2005019881A1
公开(公告)日：2005-03-03
申请号：PCT/US2004/026087
申请日：2004-08-12
申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY , GRAWERT, Felix, Jan , AKIYAMA, Shoji , WADA, Kazumi , KAERTNER, Franz, X.
发明人： GRAWERT, Felix, Jan , AKIYAMA, Shoji , WADA, Kazumi , KAERTNER, Franz, X.
IPC分类号： G02B5/08
CPC分类号： G02B5/0833
摘要： An optical reflector includes an optical reflective element that comprises alternating layers of high and low index layers. A new substrate is bonded on the optical reflective element. The sequence of layers in the reflective element is reversed in order such that the layers grown first with lowest surface roughness are exposed to the highest electric field strength, and the layer grown last, of highest roughness, are buried deep in the multilayer stack.
摘要翻译：光学反射器包括光反射元件，其包括高折射率层和低折射率层的交替层。新的衬底粘结在光学反射元件上。反射元件中的层序顺序颠倒，使得首先以最低表面粗糙度生长的层暴露于最高的电场强度，并且最后粗糙度最高的层被深埋在多层叠层中。

10. 发明申请

WO2004113977A1 MULTIPLE OXIDATION AND ETCH SMOOTHING METHOD FOR REDUCING SILICON WAVEGUIDE ROUGHNESS 审中-公开
标题翻译：用于减少硅波长粗糙度的多种氧化和蚀刻平滑方法
公开(公告)号：WO2004113977A1
公开(公告)日：2004-12-29
申请号：PCT/US2004/019459
申请日：2004-06-16
申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY , SPARACIN, Daniel, K. , WADA, Kazumi , KIMERLING, Lionel, C.
发明人： SPARACIN, Daniel, K. , WADA, Kazumi , KIMERLING, Lionel, C.
IPC分类号： G02B6/12
CPC分类号： G02B6/122 , G02B6/13 , G02B6/136 , G02B2006/12097
摘要： The light-guiding structure includes a waveguide structure that comprises a substrate and a low refractive index underclad material. The waveguide structure is oxidized to form an oxidized layer on a surface of the waveguide structure. The oxidized layer is isotropically etched after the reaction-limited oxidation regime is approaching the diffusion-limited regime and repeatedly oxidized and etched so that the waveguide structure is continuously oxidized in the reaction-limited regime, reducing the overall time of oxidation and volume of oxidized material so that the waveguide structure has its sidewall roughness reduced efficiently enabling high transmission rates of guided light.
摘要翻译：导光结构包括波导结构，其包括基底和低折射率底层材料。波导结构被氧化以在波导结构的表面上形成氧化层。在反应限制氧化态接近扩散限制状态后，氧化层进行各向同性蚀刻，并被反复氧化和蚀刻，使得波导结构在反应限制状态下连续氧化，减少氧化的总时间和氧化的体积材料，使得波导结构的侧壁粗糙度有效地降低，导致导光的高透射率。

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