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1. 发明申请

WO2019133372A1 MULTIMODAL ETHYLENE-BASED POLYMER PROCESSING SYSTEMS AND METHODS 审中-公开
公开(公告)号：WO2019133372A1
公开(公告)日：2019-07-04
申请号：PCT/US2018/066462
申请日：2018-12-19
申请人： MUNJAL, Sarat , KOLTHAMMER, Brian W. , DEMIRORS, Mehmet , TURNER, Michael D. , GAUBERT, Joshua B. , LIN, Yijian
发明人： MUNJAL, Sarat , DEMIRORS, Mehmet , TURNER, Michael D. , GAUBERT, Joshua B. , LIN, Yijian
IPC分类号： C08F210/16 , C08F4/659 , C08F2/00 , C08L23/08
CPC分类号： C08L23/0815 , C08F4/65908 , C08F4/65912 , C08F210/16 , C08L2205/025 , C08L2205/03 , C08L2308/00 , C08L2314/02 , C08F4/65904 , C08F4/64193 , C08F4/6555 , C08F2/001 , C08F2/06 , C08F210/14 , C08F2500/04 , C08F2500/05 , C08F2500/12
摘要： Embodiments of methods for producing a trimodal polymer in a solution polymerization process comprise three solution polymerization reactors organized in parallel or in series.

2. 发明申请

WO2006050051A2 TRANSISTOR STRUCTURE WITH DUAL TRENCH FOR OPTIMIZED STRESS EFFECT AND METHOD THEREOF 审中-公开
标题翻译：具有双重TRENCH的晶体管结构优化应力效应及其方法
公开(公告)号：WO2006050051A2
公开(公告)日：2006-05-11
申请号：PCT/US2005/038847
申请日：2005-10-25
申请人： FREESCALE SEMICONDUCTOR, INC. , CHEN, Jian , TURNER, Michael D. , VASEK, James E.
发明人： CHEN, Jian , TURNER, Michael D. , VASEK, James E.
IPC分类号： H01L27/12 , H01L21/84
CPC分类号： H01L21/76283 , H01L21/0274 , H01L21/823807 , H01L21/823878 , H01L21/84 , H01L27/1203 , H01L29/045 , H01L29/7842
摘要： A method for forming a portion of a semiconductor device structure (30) comprises providing a semiconductor-on-insulator substrate having a semiconductor active layer (34), an insulation layer (32), and a semiconductor substrate. A first isolation trench (40) is formed within the semiconductor active layer and a stressor material (42) is deposited on a bottom of the first trench, wherein the stressor material includes a dual-use film. A second isolation trench (44) is formed within the semiconductor active layer, wherein the second isolation trench is absent of the stressor material on a bottom of the second trench. The presence and absence of stressor material in the first and second isolation trenches, respectively, provides differential stress: (i) on one or more of N-type or P-type devices of the semiconductor device structure, (ii) for one or more of width direction or channel direction orientations, and (iii) to customize stress benefits of one or more of a or semiconductor-on-insulator substrate.
摘要翻译：一种用于形成半导体器件结构（30）的一部分的方法包括提供具有半导体有源层（34），绝缘层（32）和半导体衬底的绝缘体上半导体衬底。第一隔离沟槽（40）形成在半导体有源层内，并且应力源材料（42）沉积在第一沟槽的底部上，其中应力源材料包括两用膜。第二隔离沟槽（44）形成在半导体有源层内，其中第二隔离沟槽不存在第二沟槽底部上的应力源材料。在第一和第二隔离沟槽中分别存在和不存在应力材料提供差分应力：（i）在半导体器件结构的一个或多个N型或P型器件中，（ii）对于一个或多个的宽度方向或沟道方向取向，以及（iii）定制绝缘体上半导体衬底中的一个或多个的应力益处。

3. 发明申请

WO2006023057A1 ROBUST SPRAY-DRIED ZIEGLER-NATTA PROCATALYST AND POLYMERIZATION PROCESS EMPLOYING SAME 审中-公开
标题翻译：稳定喷雾干燥的ZIEGLER-NATTA方法和使用其的聚合方法
公开(公告)号：WO2006023057A1
公开(公告)日：2006-03-02
申请号：PCT/US2005/022492
申请日：2005-06-24
申请人： UNION CARBIDE CHEMICALS & PLASTICS TECHNOLOGY CORPORATION , DOW GLOBAL TECHNOLOGIES INC. , JORGENSEN, Robert, J. , KINNAN, Michael, A. , TURNER, Michael, D. , WHITED, Stephanie, M. , BAN, Laszlo, L. , WAGNER, Burkhard, E.
发明人： JORGENSEN, Robert, J. , KINNAN, Michael, A. , TURNER, Michael, D. , WHITED, Stephanie, M. , BAN, Laszlo, L. , WAGNER, Burkhard, E.
IPC分类号： C08F10/00 , C08F4/02 , C08F4/654
CPC分类号： C08F10/00 , C08F10/02 , C08F110/02 , C08F4/6565 , C08F2/001 , C08F4/6543 , C08F2500/07 , C08F2500/02 , C08F2500/01 , C08F2500/18 , C08F2500/24 , C08F2500/05 , C08F4/025
摘要： A Ziegler-Natta procatalyst composition in the form of solid particles and comprising magnesium, halide and transition metal moieties, said particles having an average size (D50) of from 10 to 70 µm, characterized in that at least 5 percent of the particles have internal void volume substantially or fully enclosed by a monolithic surface layer (shell), said layer being characterized by an average shell thickness/ particle size ratio (Thickness Ratio) determined by SEM techniques for particles having particle size greater than 30 µm of greater than 0.2.
摘要翻译：固体颗粒形式的齐格勒 - 纳塔原催化剂组合物，其包含镁，卤化物和过渡金属部分，所述颗粒的平均尺寸（D50）为10至70μm，其特征在于至少5％的颗粒具有内部通过整体式表面层（壳）基本上或完全封闭的空隙体积，所述层的特征在于通过SEM技术测定的粒径大于30μm的颗粒的平均壳厚度/粒径比（厚度比）大于0.2。

4. 发明申请

WO2005112124A3 ISOLATION TRENCH 审中-公开
标题翻译：隔离开关
公开(公告)号：WO2005112124A3
公开(公告)日：2006-01-12
申请号：PCT/US2005011553
申请日：2005-04-05
申请人： FREESCALE SEMICONDUCTOR INC , YEAP CHOH-FEI , JEON YONGJOO , TURNER MICHAEL D , VAN GOMPEL TONI D
发明人： YEAP CHOH-FEI , JEON YONGJOO , TURNER MICHAEL D , VAN GOMPEL TONI D
IPC分类号： H01L21/302 , H01L21/461 , H01L21/76 , H01L21/762 , H01L21/84 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , H01L29/00
CPC分类号： H01L21/76283 , H01L21/84
摘要： A process for forming an isolation trench (209) in a wafer (201). The process includes depositing (e.g. by a directional deposition process) a first dielectric material (307) in the trench (209) and then depositing a second dielectric material (309) (e.g. by a directional deposition process) over the first dielectric material (307) in the trench (209). A third material (501) is deposited in the trench (209) on the second dielectric material (309). The second material (309) and the third material (501) are selectively etchable with respect to each other. In one example, the first material (307) has a lower dielectric constant than the second material (309).
摘要翻译：一种用于在晶片（201）中形成隔离沟槽（209）的工艺。该方法包括在沟槽（209）中沉积（例如通过定向沉积工艺）第一介电材料（307），然后在第一介电材料（307）上沉积第二电介质材料（例如通过定向沉积工艺））在沟槽（209）中。第三材料（501）沉积在第二电介质材料（309）上的沟槽（209）中。第二材料（309）和第三材料（501）可相对于彼此可选择性地蚀刻。在一个示例中，第一材料（307）具有比第二材料（309）更低的介电常数。

5. 发明申请

WO2005012371A3 PROCESS FOR CONTROL OF POLYMER FINES IN A GAS-PHASE POLYMERIZATION 审中-公开
标题翻译：在气相聚合中控制聚合物粉末的方法
公开(公告)号：WO2005012371A3
公开(公告)日：2005-05-06
申请号：PCT/US2004010572
申请日：2004-04-07
申请人： UNION CARBIDE CHEM PLASTIC , UPHAM STEPHANIE M , TURNER MICHAEL D , KINNAN MICHAEL A , JORGENSEN ROBERT J
发明人： UPHAM STEPHANIE M , TURNER MICHAEL D , KINNAN MICHAEL A , JORGENSEN ROBERT J
IPC分类号： C08F2/34 , C08F4/654 , C08F10/00 , C08F210/16 , C08F4/655
CPC分类号： C08F10/00 , C08F210/16 , C08F4/6555 , C08F2/34 , C08F2/001 , C08F210/14 , C08F2500/12
摘要： A gas phase polymerization process comprising: (1) preparing a solution of a catalyst precursor comprising a mixture of magnesium and titanium compounds, an electron donor and a solvent; (2) adding a filler to the solution from step (1) to form a slurry; (3) spray drying the slurry from step (2) at a temperature of 100 to 140 °C to form a spray dried precursor; (4) slurring the spray dried precursor from step (3) in mineral oil, (5) partially or fully pre-activating the catalyst precursor by contacting the slurry of (4) with one or more Lewis Acids, and (6) transferring the partially or fully activated precursor from step (5) into a gas phase reactor in which an olefin polymerization reaction is in progress.
摘要翻译：一种气相聚合方法，包括：（1）制备包含镁和钛化合物，电子给体和溶剂的混合物的催化剂前体溶液; （2）向步骤（1）的溶液中加入填料以形成浆料; （3）在100〜140℃的温度下喷雾干燥步骤（2）的浆料，形成喷雾干燥的前体; （4）将来自步骤（3）的喷雾干燥的前体在矿物油中捣碎，（5）通过使（4）的浆料与一种或多种路易斯酸接触来部分或全部预活化催化剂前体，和（6）将部分或完全活化的步骤（5）的前体进入进行烯烃聚合反应的气相反应器。

6. 发明申请

WO2007121168A3 ROTARY FAN WITH ENCAPSULATED MOTOR ASSEMBLY 审中-公开
标题翻译：旋转风扇与封闭式电动机总成
公开(公告)号：WO2007121168A3
公开(公告)日：2008-06-26
申请号：PCT/US2007066310
申请日：2007-04-10
申请人： EMP ADVANCED DEV LLC , PIPKORN NICHOLAS T , STEPHENS TODD R , CARLSON JEREMY S , ALLEN DAVID J , BADER MARK S , TURNER MICHAEL D
发明人： PIPKORN NICHOLAS T , STEPHENS TODD R , CARLSON JEREMY S , ALLEN DAVID J , BADER MARK S , TURNER MICHAEL D
IPC分类号： F04B17/00 , F04B35/04
CPC分类号： F04D29/542 , F04D29/526
摘要： A fan assembly, such as a rotary axial fan assembly, is disclosed with a shroud that is adapted to be mounted proximate to a heat exchanger. The shroud is sized for conveying a flow of fluid through the heat exchanger and the shroud. A stator fan blade extends inward from the shroud for supporting a hub generally central within the shroud. A motor stator is encapsulated within the hub for receiving a fan rotor and fan blades for forcing the flow of fluid through the heat exchanger and the shroud. The hub may be formed from a thermally conductive material for transferring heat from the motor stator into the flow of fluid for dissipating the heat.
摘要翻译：公开了一种风扇组件，例如旋转轴流式风扇组件，其具有适于安装在靠近热交换器的护罩。护罩的尺寸适于输送通过热交换器和护罩的流体流。定子风扇叶片从护罩向内延伸，用于支撑大致中心在护罩内的轮毂。电机定子被封装在毂内，用于接收风扇转子和风扇叶片，用于迫使流体流过热交换器和护罩。轮毂可以由用于将热量从电动机定子传递到用于散热的流体流的导热材料形成。

7. 发明申请

WO2006050051A3 TRANSISTOR STRUCTURE WITH DUAL TRENCH FOR OPTIMIZED STRESS EFFECT AND METHOD THEREOF 审中-公开
标题翻译：具有双重TRENCH的晶体管结构优化应力效应及其方法
公开(公告)号：WO2006050051A3
公开(公告)日：2007-04-26
申请号：PCT/US2005038847
申请日：2005-10-25
申请人： FREESCALE SEMICONDUCTOR INC , CHEN JIAN , TURNER MICHAEL D , VASEK JAMES E
发明人： CHEN JIAN , TURNER MICHAEL D , VASEK JAMES E
IPC分类号： H01L21/336 , H01L21/76
CPC分类号： H01L21/76283 , H01L21/0274 , H01L21/823807 , H01L21/823878 , H01L21/84 , H01L27/1203 , H01L29/045 , H01L29/7842
摘要： A method for forming a portion of a semiconductor device structure (30) comprises providing a semiconductor-on-insulator substrate having a semiconductor active layer (34), an insulation layer (32), and a semiconductor substrate. A first isolation trench (40) is formed within the semiconductor active layer and a stressor material (42) is deposited on a bottom of the first trench, wherein the stressor material includes a dual-use film. A second isolation trench (44) is formed within the semiconductor active layer, wherein the second isolation trench is absent of the stressor material on a bottom of the second trench. The presence and absence of stressor material in the first and second isolation trenches, respectively, provides differential stress: (i) on one or more of N-type or P-type devices of the semiconductor device structure, (ii) for one or more of width direction or channel direction orientations, and (iii) to customize stress benefits of one or more of a or semiconductor-on-insulator substrate.
摘要翻译：一种用于形成半导体器件结构（30）的一部分的方法包括提供具有半导体有源层（34），绝缘层（32）和半导体衬底的绝缘体上半导体衬底。第一隔离沟槽（40）形成在半导体有源层内，并且应力源材料（42）沉积在第一沟槽的底部上，其中应力源材料包括两用膜。第二隔离沟槽（44）形成在半导体有源层内，其中第二隔离沟槽不存在第二沟槽底部上的应力源材料。在第一和第二隔离沟槽中分别存在和不存在应力材料提供差分应力：（i）在半导体器件结构的一个或多个N型或P型器件中，（ii）对于一个或多个的宽度方向或沟道方向取向，以及（iii）定制绝缘体上半导体衬底中的一个或多个的应力益处。

8. 发明申请

WO2007024520A1 ACTIVATING AN INACTIVE MOBILE UNIT IN A DISTRIBUTED NETWORK 审中-公开
标题翻译：在分布式网络中激活不活动的移动单元
公开(公告)号：WO2007024520A1
公开(公告)日：2007-03-01
申请号：PCT/US2006/031535
申请日：2006-08-11
申请人： LUCENT TECHNOLOGIES INC. , KLEIN, Thierry, Etienne , NAIR, Sureshbabu, P. , RAJKUMAR, Ajay , TURNER, Michael, D.
发明人： KLEIN, Thierry, Etienne , NAIR, Sureshbabu, P. , RAJKUMAR, Ajay , TURNER, Michael, D.
IPC分类号： H04L29/08 , H04Q7/38
CPC分类号： H04W36/12 , H04W8/26 , H04W36/14 , H04W52/0216 , H04W76/20 , Y02D70/1242 , Y02D70/142 , Y02D70/144 , Y02D70/146
摘要： The present invention provides a method of wireless communication in a distributed network comprised of a mobile unit, a plurality of gateways, and a plurality of base stations associated with the gateways. The method includes receiving information indicative of a first base station from a first gateway associated with the first base station in response to the mobile unit handing off from a second base station to the first base station. The mobile unit may be inactive.
摘要翻译：本发明提供一种分布式网络中的无线通信方法，该分布式网络由移动单元，多个网关和与该网关相关联的多个基站组成。所述方法包括响应于所述移动单元从第二基站切换到所述第一基站，从与所述第一基站相关联的第一网关接收指示第一基站的信息。移动单元可能无效。

9. 发明申请

WO2006130354A1 A METHOD FOR SEAMLESS SESSION TRANSFER OF A MOBILE STATION 审中-公开
标题翻译：一种移动站无缝会话传输的方法
公开(公告)号：WO2006130354A1
公开(公告)日：2006-12-07
申请号：PCT/US2006/019303
申请日：2006-05-19
申请人： LUCENT TECHNOLOGIES INC. , RAJKUMAR, Ajay , TURNER, Michael, D.
发明人： RAJKUMAR, Ajay , TURNER, Michael, D.
IPC分类号： H04Q7/38
CPC分类号： H04W36/02
摘要： In the method, a source base station ASN sends first information to a target base station ASN. The first information indicates a sequence number of a first data unit in a sequence of data units undelivered to the mobile station by the source base station. The source base station also sends the target base station second information. The second information indicates data units, after the first undelivered data unit in the sequence, that have been delivered to the mobile station MSS by the source base station. The second information may further indicate portions of the first undelivered data unit that have been delivered to the mobile station by the source base station.
摘要翻译：在该方法中，源基站ASN向目标基站ASN发送第一信息。第一信息指示由源基站未递送给移动台的数据单元的序列中的第一数据单元的序列号。源基站还发送目标基站第二信息。第二信息表示在序列中的第一个未送达数据单元之后由源基站传送到移动台MSS的数据单元。第二信息还可以指示源基站已被传送到移动台的第一未传送数据单元的部分。

10. 发明申请

WO2005112124A2 ISOLATION TRENCH 审中-公开
标题翻译：隔离开关
公开(公告)号：WO2005112124A2
公开(公告)日：2005-11-24
申请号：PCT/US2005/011553
申请日：2005-04-05
申请人： FREESCALE SEMICONDUCTOR, INC. , YEAP, Choh-Fei , JEON, Yongjoo , TURNER, Michael D. , VAN GOMPEL, Toni D.
发明人： YEAP, Choh-Fei , JEON, Yongjoo , TURNER, Michael D. , VAN GOMPEL, Toni D.
IPC分类号： H01L29/76
CPC分类号： H01L21/76283 , H01L21/84
摘要： A process for forming an isolation trench in a wafer. The process includes depositing (e.g. by a directional deposition process) a first dielectric material in the trench and then depositing a second dielectric material (e.g. by a directional deposition process) over the first dielectric material in the trench. A third material is deposited in the trench on the second layer. The second material and the third material are selectively etchable with respect to each other. In one example, the first material has a lower dielectric constant than the second material.
摘要翻译：一种用于在晶片中形成隔离沟槽的工艺。该方法包括在沟槽中沉积（例如通过定向沉积工艺）第一介电材料，然后在沟槽中的第一介电材料上沉积第二电介质材料（例如通过定向沉积工艺）。第三材料沉积在第二层上的沟槽中。第二材料和第三材料相对于彼此可选择性地蚀刻。在一个示例中，第一材料具有比第二材料低的介电常数。

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