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1. 发明申请

WO2011075728A3 A SIMPLE ROUTE FOR ALKALI METAL INCORPORATION IN SOLUTION-PROCESSED CRYSTALLINE SEMICONDUCTORS 审中-公开
标题翻译：溶液加工晶体半导体中碱金属纳入简单路线
公开(公告)号：WO2011075728A3
公开(公告)日：2011-10-06
申请号：PCT/US2010061323
申请日：2010-12-20
申请人： UNIV CALIFORNIA , YANG YANG , HOU WEI-JEN , LI SHENG-HAN , TUNG CHUN-CHIH
发明人： YANG YANG , HOU WEI-JEN , LI SHENG-HAN , TUNG CHUN-CHIH
IPC分类号： H01L21/205
CPC分类号： H01L21/02551 , H01L21/02568 , H01L21/02628 , H01L31/0322 , H01L31/0725 , H01L31/0749 , H01L31/18 , Y02E10/541
摘要： A precursor solution for producing a semiconductor includes at least one of an alkali metal or an alkali metal compound dissolved in a solvent, and a metal chalcogenide dissolved in the solvent. A method of producing a precursor solution for producing a semiconductor includes preparing a first precursor solution that has at least one of an alkali metal or an alkali metal compound dissolved in a first solvent, preparing a second precursor solution that has a metal chalcogenide dissolved in a second solvent, and combining the first and second precursor solutions to obtain the precursor solution for producing the semiconductor. A method of producing a semiconductor device includes providing a precursor solution for producing a semiconductor layer on a substructure, and forming a layer of the precursor solution on the substructure. The precursor solution includes at least one of an alkali metal or an alkali metal compound dissolved in a solvent, and a metal chalcogenide dissolved in the solvent.
摘要翻译：用于制造半导体的前体溶液包括溶解在溶剂中的碱金属或碱金属化合物和溶解在溶剂中的金属硫属元素化物中的至少一种。生产用于生产半导体的前体溶液的方法包括：制备第一前体溶液，其具有溶解在第一溶剂中的碱金属或碱金属化合物中的至少一种;制备第二前体溶液，其具有溶解在第一溶剂中的金属硫属元素化物第二溶剂，并且合并第一和第二前体溶液以获得用于生产半导体的前体溶液。一种制造半导体器件的方法包括：提供用于在子结构上制造半导体层的前体溶液，以及在该子结构上形成前体溶液层。前体溶液包括溶解在溶剂中的碱金属或碱金属化合物中的至少一种以及溶解在溶剂中的金属硫族化合物。

2. 发明申请

WO2009094277A3 HIGH-THROUGHPUT SOLUTION PROCESSING OF LARGE SCALE GRAPHENE AND DEVICE APPLICATIONS 审中-公开
标题翻译：大规模石墨和设备应用的高通量解决方案处理
公开(公告)号：WO2009094277A3
公开(公告)日：2009-09-17
申请号：PCT/US2009031004
申请日：2009-01-14
申请人： UNIV CALIFORNIA , YANG YANG , KANER RICHARD B , TUNG CHUN-CHIH , ALLEN MATTHEW J
发明人： YANG YANG , KANER RICHARD B , TUNG CHUN-CHIH , ALLEN MATTHEW J
IPC分类号： H01J49/00 , H01M4/96
CPC分类号： H01G9/058 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/19 , C01B2204/02 , H01G11/36 , H01L51/0003 , H01L51/0048 , H01L51/0541 , H01L51/0545 , H01M4/96 , Y02E60/13
摘要： A method of producing carbon macro-molecular structures includes dissolving a graphitic material in a solvent to provide a suspension of carbon-based macro-molecular structures in the solvent, and obtaining a plurality of the carbon macro-molecular structures from the suspension The plurality of carbon macro-molecular structures obtained from the suspension each consists essentially of carbon A material, an electrical, electronic or electro-optic device, a composite material, a hydrogen storage device, or an electrode each has carbon macro-molecular structures produced according to methods of producing carbon macro-molecular structures according to some embodiments of the current invention
摘要翻译：制造碳宏观分子结构的方法包括将石墨材料溶解在溶剂中以提供碳基大分子结构在溶剂中的悬浮液，并从悬浮液中获得多个碳大分子结构多个从悬浮液获得的碳宏观分子结构各自主要由碳A材料，电气，电子或电光器件，复合材料，储氢器件或电极组成，每个都具有根据方法制备的碳大分子结构根据本发明的一些实施方案产生碳宏观分子结构

3. 发明申请

WO2009094277A2 HIGH-THROUGHPUT SOLUTION PROCESSING OF LARGE SCALE GRAPHENE AND DEVICE APPLICATIONS 审中-公开
标题翻译：大规模石墨和设备应用的高通量解决方案处理
公开(公告)号：WO2009094277A2
公开(公告)日：2009-07-30
申请号：PCT/US2009/031004
申请日：2009-01-14
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA , YANG, Yang , KANER, Richard, B. , TUNG, Chun-chih , ALLEN, Matthew, J.
发明人： YANG, Yang , KANER, Richard, B. , TUNG, Chun-chih , ALLEN, Matthew, J.
IPC分类号： C25C1/16
CPC分类号： H01G9/058 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/19 , C01B2204/02 , H01G11/36 , H01L51/0003 , H01L51/0048 , H01L51/0541 , H01L51/0545 , H01M4/96 , Y02E60/13
摘要： A method of producing carbon macro-molecular structures includes dissolving a graphitic material in a solvent to provide a suspension of carbon-based macro-molecular structures in the solvent, and obtaining a plurality of the carbon macro-molecular structures from the suspension. The plurality of carbon macro-molecular structures obtained from the suspension each consists essentially of carbon. A material according to some embodiments of the current invention is produced according to the method of producing carbon macro-molecular structures. An electrical, electronic or electro-optic device includes material produced according to the methods of the current invention. A composite material according to some embodiments of the current invention has carbon macro-molecular structures produced according to methods of producing carbon macro-molecular structures according to some embodiments of the current invention. A hydrogen storage device according to some embodiments of the current invention has carbon macro-molecular structures produced according to methods of producing carbon macro-molecular structures according to some embodiments of the current invention. An electrode according to some embodiments of the current invention has carbon macro-molecular structures produced according to methods of producing carbon macro-molecular structures according to some embodiments of the current invention.
摘要翻译：制造碳宏观分子结构的方法包括将石墨材料溶解在溶剂中以提供碳基大分子结构在溶剂中的悬浮液，并从悬浮液中获得多个碳大分子结构。从悬浮液中获得的多个碳宏观分子结构各自主要由碳组成。根据本发明的一些实施方案的材料根据生产碳宏观分子结构的方法制备。电气，电子或电光设备包括根据本发明的方法制造的材料。根据本发明的一些实施方案的复合材料具有根据本发明的一些实施方案的根据生产碳宏观分子结构的方法制备的碳大分子结构。根据本发明的一些实施方案的氢存储装置具有根据本发明的一些实施方案的根据生产碳宏观分子结构的方法产生的碳宏观分子结构。根据本发明的一些实施方案的电极具有根据本发明的一些实施方案的根据生产碳宏观分子结构的方法产生的碳大分子结构。

4. 发明申请

WO2011075728A2 A SIMPLE ROUTE FOR ALKALI METAL INCORPORATION IN SOLUTION-PROCESSED CRYSTALLINE SEMICONDUCTORS 审中-公开
标题翻译：解决方案处理晶体管半导体中碱金属的简单路径
公开(公告)号：WO2011075728A2
公开(公告)日：2011-06-23
申请号：PCT/US2010/061323
申请日：2010-12-20
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA , YANG, Yang , HOU, Wei-Jen , LI, Sheng-Han , TUNG, Chun-Chih
发明人： YANG, Yang , HOU, Wei-Jen , LI, Sheng-Han , TUNG, Chun-Chih
IPC分类号： H01L21/205
CPC分类号： H01L21/02551 , H01L21/02568 , H01L21/02628 , H01L31/0322 , H01L31/0725 , H01L31/0749 , H01L31/18 , Y02E10/541
摘要： A precursor solution for producing a semiconductor includes at least one of an alkali metal or an alkali metal compound dissolved in a solvent, and a metal chalcogenide dissolved in the solvent. A method of producing a precursor solution for producing a semiconductor includes preparing a first precursor solution that has at least one of an alkali metal or an alkali metal compound dissolved in a first solvent, preparing a second precursor solution that has a metal chalcogenide dissolved in a second solvent, and combining the first and second precursor solutions to obtain the precursor solution for producing the semiconductor. A method of producing a semiconductor device includes providing a precursor solution for producing a semiconductor layer on a substructure, and forming a layer of the precursor solution on the substructure. The precursor solution includes at least one of an alkali metal or an alkali metal compound dissolved in a solvent, and a metal chalcogenide dissolved in the solvent.
摘要翻译：用于制造半导体的前体溶液包括溶解在溶剂中的碱金属或碱金属化合物和溶解在溶剂中的金属硫族化物中的至少一种。制备半导体制造用前体溶液的方法包括制备具有溶解在第一溶剂中的碱金属或碱金属化合物中的至少一种的第一前体溶液，制备溶解有金属硫属化物的第二前体溶液第二溶剂，并且组合第一和第二前体溶液以获得用于制备半导体的前体溶液。制造半导体器件的方法包括提供用于在子结构上制造半导体层的前体溶液，以及在子结构上形成前体溶液层。前体溶液包括溶解在溶剂中的碱金属或碱金属化合物和溶解在溶剂中的金属硫族化物中的至少一种。

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