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1. 发明申请

WO2008069675A3 MULTICRYSTALLINE SILICON SOLAR CELLS 审中-公开
标题翻译：多晶硅太阳能电池
公开(公告)号：WO2008069675A3
公开(公告)日：2008-11-20
申请号：PCT/NO2007000422
申请日：2007-11-28
申请人： ELKEM SOLAR AS , ENEBAKK ERIK , PETER KRISTIAN , RAABE BERND , TRONSTAD RAGNAR
发明人： ENEBAKK ERIK , PETER KRISTIAN , RAABE BERND , TRONSTAD RAGNAR
IPC分类号： H01L21/322 , H01L21/223 , H01L31/042 , H01L31/18
CPC分类号： H01L21/3221 , H01L31/18 , H01L31/186 , H01L31/1864 , Y02E10/50 , Y02P70/521
摘要： The present invention relates to multicrystalline p-type silicon wafers with high lifetime. The silicon wafers contain 0.2-2.8 ppma boron and 0.06-2.8 ppma phosphorous and/or arsenic and have been subjected to phosphorous diffusion and phosphorous gettering at a temperature of above 925°C. The invention further relates to a method for production of such multicrystalline silicon wafers and to solar cells comprising such silicon wafers.
摘要翻译：本发明涉及具有高寿命的多晶p型硅晶片。硅晶片含有0.2-2.8ppma的硼和0.06-2.8ppma的磷和/或砷，并且已经在高于925℃的温度下进行磷扩散和磷吸收。本发明还涉及一种用于生产这种多晶硅晶片的方法以及包括这种硅晶片的太阳能电池。

2. 发明申请

WO2013051940A1 METHOD FOR PRODUCING SILICON MONO-CRYSTALS AND MULTI-CRYSTALLINE SILICON INGOTS 审中-公开
标题翻译：生产硅单晶和多晶硅硅素的方法
公开(公告)号：WO2013051940A1
公开(公告)日：2013-04-11
申请号：PCT/NO2012/000055
申请日：2012-09-24
申请人： ELKEM SOLAR AS , TRONSTAD, Ragnar , FRIESTAD, Kenneth , SØILAND, Anne, Karin
发明人： TRONSTAD, Ragnar , FRIESTAD, Kenneth , SØILAND, Anne, Karin
IPC分类号： C30B29/06 , C30B15/00 , C30B15/04 , C30B28/00
CPC分类号： C30B11/006 , C30B11/007 , C30B11/04 , C30B15/04 , C30B15/20 , C30B15/305 , C30B29/06
摘要： 1, The present invention relates to a method for increasing the amount of p-type material when pulling silicon mono-crystals and directionally solidifying multi-crystalline silicon ingots from a silicon melt contained in a vessel where the silicon melt initially contains 0.12 ppma and 5 ppma boron and between 0.04 ppma and 10 ppma phosphorous. The pulling of mono-crystals and the directionally solidification of multi-crystalline silicon ingots are carried out at a pressure below 600 mbar and an inert gas is continuously supplied to the surface of the silicon me!t and continuously removed from the surface of the silicon melt whereby phosphorus is continuously removed from the molten silicon during the solidification process resulting in a substantially constant ratio between boron and phosphorus in the silicon melt during the pulling of the silicon mono-crystals and during the directional solidification of the multi- crystalline silicon ingots.
摘要翻译： 1，本发明涉及一种增加p型材料的量的方法，当拉硅单晶并且从包含在容器中的硅熔体定向凝固多晶硅锭时，硅熔体最初含有0.12ppma和5 ppma硼和0.04ppma和10ppma磷之间。单晶硅的拉伸和多晶硅锭的定向凝固在低于600毫巴的压力下进行，并且将惰性气体连续地供应到硅表面，并从硅的表面连续地除去熔化，由此在凝固过程中从熔融硅中连续除去磷，导致在硅单晶拉制期间和在多晶硅锭的定向凝固期间硅熔体中硼和磷之间的基本恒定的比例。

3. 发明申请

WO2008118023A1 A COATING COMPOSITION FOR A MOULD 审中-公开
标题翻译：用于模具的涂料组合物
公开(公告)号：WO2008118023A1
公开(公告)日：2008-10-02
申请号：PCT/NO2008/000103
申请日：2008-03-17
申请人： ELKEM SOLAR AS , TRONSTAD, Ragnar , ENEBAKK, Erik
发明人： TRONSTAD, Ragnar , ENEBAKK, Erik
IPC分类号： C03B15/10 , B29C33/60 , C30B35/00 , C09D7/12
CPC分类号： C30B11/002 , C09D1/00
摘要： A coating system for a mould for the directional solidification of silicon. The coating is applied as an aqueous slurry of silicon nitride particle, carbon black and microsilica.
摘要翻译：用于硅定向固化的模具的涂层系统。该涂层作为氮化硅颗粒，炭黑和微硅粉的含水浆料施加。

4. 发明申请

WO2008069675A2 SOLAR CELLS 审中-公开
标题翻译：太阳能电池
公开(公告)号：WO2008069675A2
公开(公告)日：2008-06-12
申请号：PCT/NO2007/000422
申请日：2007-11-28
申请人： ELKEM SOLAR AS , ENEBAKK, Erik , PETER, Kristian , RAABE, Bernd , TRONSTAD, Ragnar
发明人： ENEBAKK, Erik , PETER, Kristian , RAABE, Bernd , TRONSTAD, Ragnar
CPC分类号： H01L21/3221 , H01L31/18 , H01L31/186 , H01L31/1864 , Y02E10/50 , Y02P70/521
摘要： The present invention relates to multicrystalline p-type silicon wafers with high lifetime. The silicon wafers contain 0.2-2.8 ppma boron and 0.06-2.8 ppma phosphorous and/or arsenic and have been subjected to phosphorous diffusion and phosphorous gettering at a temperature of above 925°C. The invention further relates to a method for production of such multicrystalline silicon wafers and to solar cells comprising such silicon wafers.
摘要翻译：本发明涉及具有高寿命的多晶p型硅晶片。硅晶片含有0.2-2.8ppma的硼和0.06-2.8ppma的磷和/或砷，并且已经在高于925℃的温度下进行磷扩散和磷吸收。本发明还涉及一种用于生产这种多晶硅晶片的方法以及包括这种硅晶片的太阳能电池。

5. 发明申请

WO2005063621A1 SILICON FEEDSTOCK FOR SOLAR CELLS 审中-公开
标题翻译：太阳能电池用硅胶
公开(公告)号：WO2005063621A1
公开(公告)日：2005-07-14
申请号：PCT/NO2004/000003
申请日：2004-01-12
申请人： ELKEM ASA , ENEBAKK, Erik , FRIESTAD, Kenneth , TRONSTAD, Ragnar , ZAHEDI, Cyrus , DETHLOFF, Christian
发明人： ENEBAKK, Erik , FRIESTAD, Kenneth , TRONSTAD, Ragnar , ZAHEDI, Cyrus , DETHLOFF, Christian
IPC分类号： C01B33/00
CPC分类号： C01B33/037 , C30B11/00 , C30B13/00 , C30B15/00 , C30B29/06
摘要： The present invention relates to silicon feedstock for producing directionally solidified silicon ingots, thin sheets and ribbons for the production of silicon wafers for PV solar cells where the silicon feedstock contains between 0.2 and 10 ppma boron and between 0.1 and 10 ppma phosphorus distributed in the material. The invention further relates to directionally solidified silicon ingot or thin silicon sheet or ribbon for making wafers for solar cells containing between 0.2 ppma and 10 ppma boron and between 0.1 ppma and 10 ppma phosphorus distributed in the ingot, said silicon ingot having a type change from p- type to n-type or from n-type to p-type at a position between 40 and 99 % of the ingot height or sheet or ribbon thickness and having a resistivity profile described by an exponential curve having a starting value between 0.4 and 10 ohm cm and where the resistivity value increases towards the type change point. Finally the invention relates to a method for producing silicon feedstock for producing directionally solidified silicon ingots, thin sheets and ribbons for the production of silicon wafers for PV solar cells.
摘要翻译：本发明涉及用于生产定向凝固的硅锭，薄片和带的硅原料，用于生产用于PV太阳能电池的硅晶片，其中硅原料含有0.2至10ppma的硼和分布在材料中的0.1至10ppma的磷。本发明还涉及定向凝固的硅锭或薄硅片或薄带，用于制造分布在锭中的0.2ppma至10ppma硼和0.1ppma至10ppma磷的太阳能电池的晶片，所述硅锭的类型从 p型至n型或从n型到p型，在铸块高度或板或带的厚度的40％至99％之间的位置，并具有由起始值介于0.4和 10欧姆厘米，其中电阻率值朝向类型变化点增加。最后，本发明涉及一种用于生产定向凝固的硅锭，薄片和带状硅原料的方法，用于生产光伏太阳能电池的硅片。

6. 发明申请

WO2003097528A1 A CALCIUM-SILICATE BASED SLAG FOR TREATMENT OF MOLTEN SILICON 审中-公开
标题翻译：一种用于处理硅酸钙的硅酸钙
公开(公告)号：WO2003097528A1
公开(公告)日：2003-11-27
申请号：PCT/NO2003/000091
申请日：2003-03-17
申请人： ELKEM ASA , ENEBAKK, Erik , TRANELL, Gabriella, Maria , TRONSTAD, Ragnar
发明人： ENEBAKK, Erik , TRANELL, Gabriella, Maria , TRONSTAD, Ragnar
IPC分类号： C01B33/037
CPC分类号： C01B33/037 , C01B33/24 , C21C7/0087 , C21C7/072 , C21C7/076 , Y02P10/242
摘要： The present invention relates to a calcium-silicate based slag having a phosphorous content of less than 3 ppmw. The invention further relates to a method for producing a low phosphorous calcium-silicate based slag, where molten calcium-silicate based slag is treated with a molten ferrosilicon alloy in a vessel, whereby phosphorous in the calcium-silicate based slag is transferred to the ferrosilicon alloy, and a low phosphorous calcium-silicate to based slag is removed from the vessel.
摘要翻译：本发明涉及磷含量小于3ppmw的硅酸钙基炉渣。本发明还涉及一种生产低磷硅酸钙基炉渣的方法，其中熔融的硅酸钙基炉渣在容器中用熔融的硅铁合金处理，由此将硅酸钙基炉渣中的磷转移到硅铁合金，并且从容器中除去低磷硅酸钙至基础的渣。

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