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    • 1. 发明申请
    • SILICON FEEDSTOCK FOR SOLAR CELLS
    • 太阳能电池用硅胶
    • WO2005063621A1
    • 2005-07-14
    • PCT/NO2004/000003
    • 2004-01-12
    • ELKEM ASAENEBAKK, ErikFRIESTAD, KennethTRONSTAD, RagnarZAHEDI, CyrusDETHLOFF, Christian
    • ENEBAKK, ErikFRIESTAD, KennethTRONSTAD, RagnarZAHEDI, CyrusDETHLOFF, Christian
    • C01B33/00
    • C01B33/037C30B11/00C30B13/00C30B15/00C30B29/06
    • The present invention relates to silicon feedstock for producing directionally solidified silicon ingots, thin sheets and ribbons for the production of silicon wafers for PV solar cells where the silicon feedstock contains between 0.2 and 10 ppma boron and between 0.1 and 10 ppma phosphorus distributed in the material. The invention further relates to directionally solidified silicon ingot or thin silicon sheet or ribbon for making wafers for solar cells containing between 0.2 ppma and 10 ppma boron and between 0.1 ppma and 10 ppma phosphorus distributed in the ingot, said silicon ingot having a type change from p- type to n-type or from n-type to p-type at a position between 40 and 99 % of the ingot height or sheet or ribbon thickness and having a resistivity profile described by an exponential curve having a starting value between 0.4 and 10 ohm cm and where the resistivity value increases towards the type change point. Finally the invention relates to a method for producing silicon feedstock for producing directionally solidified silicon ingots, thin sheets and ribbons for the production of silicon wafers for PV solar cells.
    • 本发明涉及用于生产定向凝固的硅锭,薄片和带的硅原料,用于生产用于PV太阳能电池的硅晶片,其中硅原料含有0​​.2至10ppma的硼和分布在材料中的0.1至10ppma的磷 。 本发明还涉及定向凝固的硅锭或薄硅片或薄带,用于制造分布在锭中的0.2ppma至10ppma硼和0.1ppma至10ppma磷的太阳能电池的晶片,所述硅锭的类型从 p型至n型或从n型到p型,在铸块高度或板或带的厚度的40%至99%之间的位置,并具有由起始值介于0.4和 10欧姆厘米,其中电阻率值朝向类型变化点增加。 最后,本发明涉及一种用于生产定向凝固的硅锭,薄片和带状硅原料的方法,用于生产光伏太阳能电池的硅片。
    • 6. 发明申请
    • METHOD AND APPARATUS FOR GRANULATING MOLTEN METAL
    • 用于生成金属的方法和装置
    • WO2003106012A1
    • 2003-12-24
    • PCT/NO2003/000192
    • 2003-06-12
    • ELKEM ASAFORWALD, Karl
    • FORWALD, Karl
    • B01J2/02
    • B22F9/082B01J2/06B22F2009/086
    • The present invention relates to a method for granulating metal melts, where a continuous stream of molten metal by means of at least one low pressure gas stream is divided into metal droplets, which gas stream gives the metal droplets a forward and upward movement and where the metal droplets are collected in a flume with flowing water where the droplets are cooled and thereafter transported to a collecting unit. The invention further relates to an apparatus for granulating metal melts, comprising a reservoir (1) for molten metal having means for pouring a continuous stream of molten metal (2) from the reservoir (1), at least one nozzle (3) for directing a low pressure gas stream against the metal stream (2), and a flume (5) having means for providing a continuous water flow in the flume, said flume being arranged at a lower level than the gas nozzle or the gas nozzles (3).
    • 本发明涉及一种用于造粒金属熔体的方法,其中通过至少一种低压气流将熔融金属的连续流分成金属液滴,所述气流使金属液滴向前和向上运动,并且其中 将金属液滴收集在具有流动水的槽中,其中液滴被冷却,然后运送到收集单元。 本发明还涉及一种用于造粒金属熔体的装置,包括用于熔融金属的储存器(1),其具有用于从储存器(1)注入连续的熔融金属流(2)的装置,至少一个喷嘴(3),用于引导 针对金属流(2)的低压气流和具有用于在槽中提供连续水流的装置的槽(5),所述水槽布置在比气体喷嘴或气体喷嘴(3)更低的水平处, 。
    • 8. 发明申请
    • METHOD AND REACTOR FOR PRODUCTION OF SILICON
    • 生产硅的方法和反应器
    • WO2003042100A1
    • 2003-05-22
    • PCT/NO2002/000409
    • 2002-11-08
    • ELKEM ASAAUNE, Jan, ArthurBRINCH, Jon, Christian
    • AUNE, Jan, ArthurBRINCH, Jon, Christian
    • C01B33/025
    • B01J19/18B01J19/088B01J2219/00155B01J2219/0813B01J2219/083B01J2219/0839B01J2219/0871B01J2219/0879B01J2219/0886C01B33/025
    • The present invention relates to a reactor for carbothermic production of silicon having (a) a vessel (1) defining a high temperature reduction zone said vessel (1) having an outlet (5) for molten silicon at its lower part, (b) means (10, 10?1¿, 11, 11?1¿) and (12, 12?1¿) for supplying energy to the high temperature reduction zone, (c) a gas/solid reaction shaft (16) for a carbon and SiO¿2? raw material mixture, the shaft (16) being attached to the top of the vessel (1), said shaft (16) having openings in its bottom communicating with the high temperature reduction zone to allow gas from the high temperature reduction zone to enter into the shaft (16). The reactor further comprising means (19) for continuous or intermittent controlled feeding of the carbon and SiO¿2? raw material mixture to the top of the shaft (16), and means (23, 25) for controlled continuous or substantially continuous controlled supply of reaction products from the bottom of the shaft (16) into the high temperature reduction zone, and where the means for supplying energy to the high temperature reaction zone comprises at least one pair of substantially horizontal electrodes (10, 10?1¿ 11, 11?1¿) and (12, 12?1¿) arranged about the circumference of the high temperature reduction vessel (1) at a level above the outlet (5) for molten silicon. The invention further relates to a method for carbothermic production of silicon by reduction of silicon dioxide comprising : continuous or intermittent controlled supplying of a mixture of a carbon and silicon dioxide raw material mixture to the shaft, where the carbon in the shaft reacts to SiC with contact with SiO-gas flowing from the high temperature reduction zone and upwardly in the shaft; continuous or substantial continuous controlled supplying of gas/solid reaction products from the bottom of the shaft and into the high temperature reduction zone; passing the gas/solid reaction products supplied from the shaft through the electric arc between the at least one pair of substantially horizontal electrodes to produce molten silicon which is collected on the bottom of the high temperature reduction vessel and SiO- and CO gas which flows upwardly through the shaft.
    • 本发明涉及一种用于碳热发生硅的反应器,其具有(a)限定高温还原区的容器(1),所述容器(1)在其下部具有用于熔融硅的出口(5),(b)装置 (10,10-1,1,11,11')和用于向高温还原区供应能量的(12,12?1),(c)用于碳的气/固反应轴(16)和 SiO¿2? 原料混合物,轴(16)附接到容器(1)的顶部,所述轴(16)在其底部具有与高温还原区连通的开口,以允许来自高温还原区的气体进入 轴(16)。 反应器还包括用于连续或间歇地控制进料碳和SiO 2的装置(19) 原料混合物到轴(16)的顶部,以及用于受控地连续或基本上连续地将控制的反应产物从轴(16)的底部供给到高温还原区的装置(23,25),并且其中 向高温反应区供应能量的装置包括至少一对基本上水平的电极(10,10,11,11,11)和(12,12'1),其围绕高温周围排列 还原容器(1)处于用于熔融硅的出口(5)的上方。 本发明还涉及通过还原二氧化硅进行碳热还原生产碳的方法,其包括:连续或间歇地将碳和二氧化硅原料混合物的混合物控制供应到轴,其中轴中的碳与SiC反应, 与从高温还原区流动并在轴上向上的SiO气体接触; 从轴的底部连续或基本连续地控制供应气体/固体反应产物并进入高温还原区; 将从轴提供的气体/固体反应产物通过电弧在至少一对基本上水平的电极之间通过电弧产生熔融硅,其收集在高温还原容器的底部和向上流动的SiO和CO气体 通过轴。