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    • 3. 发明申请
    • ENHANCEMENT OF DETECTION OF DEFECTS ON DISPLAY PANELS USING FRONT LIGHTING
    • 使用前照灯检测显示面板缺陷的增强
    • WO2009143237A1
    • 2009-11-26
    • PCT/US2009/044667
    • 2009-05-20
    • PHOTON DYNAMICS INC.TOET, DanielJONES, LloydERSAHIN, AtilaMYUNGCHUL, JunPHAM, SavierJUNG, Sam Soo
    • TOET, DanielJONES, LloydERSAHIN, AtilaMYUNGCHUL, JunPHAM, SavierJUNG, Sam Soo
    • G01R31/308
    • G01R31/308G09G3/006
    • Front-side illumination apparatus and methods are provided to enable, in general, detection of a-Si residue defects at the array test step well before the cell step. a-Si has high resistivity without exposure to light making it difficult to detect in conventional TFT-array test procedures. On the other hand, when the a-Si residue is illuminated with a light, its resistivity decreases, which, in turn, changes the electrical properties of the TFT array cell, which may be detected using the voltage imaging optical system (VIOS). In one implementation, the TFT array cell is exposed to illuminating light pulses, impacting the top side of the TFT panel during the testing performed using the VIOS. In one implementation, the front side illumination is traveling along the same path as the illumination used for voltage imaging in the VIOS. In another implementation, light source(s) for front side illumination are located in the close proximity to the VIOS modulator.
    • 提供了前侧照明装置和方法,以使得通常能够在阵列测试步骤之前,在电池步骤之前检测a-Si残留缺陷。 a-Si在不暴露于光的情况下具有高电阻,使得在常规TFT阵列测试程序中难以检测。 另一方面,当用光照射a-Si残留物时,其电阻率降低,这反过来改变了可以使用电压成像光学系统(VIOS)检测的TFT阵列电池的电性能。 在一个实现中,在使用VIOS进行的测试期间,TFT阵列单元暴露于照明光脉冲,从而影响TFT面板的顶侧。 在一个实施方案中,前侧照明沿着与用于VIOS中的电压成像的照明相同的路径行进。 在另一实施方式中,用于前侧照明的光源位于与VIOS调制器非常接近的位置。