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1. 发明申请

WO2010086363A3 ARRANGEMENT AND METHOD FOR MEASUREMENT OF THE TEMPERATURE AND OF THE THICKNESS GROWTH OF SILICON RODS IN A SILICON DEPOSITION REACTOR 审中-公开
标题翻译：硅沉积反应器中硅球的温度和厚度增长的测量方法和方法
公开(公告)号：WO2010086363A3
公开(公告)日：2010-09-23
申请号：PCT/EP2010050988
申请日：2010-01-28
申请人： CT THERM SITEC GMBH , WILFRIED VOLLMAR , STUBHAN FRANK
发明人： WILFRIED VOLLMAR , STUBHAN FRANK
IPC分类号： C01B33/035 , G01B11/06 , G01B11/08 , G01B21/08 , H01L21/66
CPC分类号： G01B11/0683 , C01B33/035 , C23C16/24 , C23C16/4418 , C23C16/52
摘要： The invention relates to an arrangement for measurement of the temperature and of the thickness growth of silicon rods in a silicon deposition reactor, by means of a pyrometer which is located outside the reactor. The aim of the invention is to provide an arrangement which allows continuous temperature measurement and measurement of the thickness growth throughout the entire deposition process, with adequate accuracy. This is achieved in that a contactlessly operating temperature measurement device (4) is provided for the temperature measurement and is arranged outside the silicon deposition reactor in front of a viewing window (2), in that the temperature measurement device (4) can be pivoted horizontally about a rotation axis (5) by means of a rotating drive (9), wherein the pivoting axis (5) runs parallel to the longitudinal axis of the silicon rod (1), and wherein the centre axis (6) of the temperature measurement device runs through the pivoting axis (5).
摘要翻译：本发明涉及一种通过位于反应器外部的高温计测量硅沉积反应器中硅棒的温度和厚度生长的装置。本发明的目的是提供一种允许连续温度测量和在整个沉积过程中以足够的精度测量厚度增长的布置。这是通过提供用于温度测量的非接触式操作的温度测量装置（4），并且设置在观察窗（2）前面的硅沉积反应器的外部，其中温度测量装置（4）可以枢转通过旋转驱动器（9）围绕旋转轴线（5）水平地旋转，其中所述枢转轴线（5）平行于所述硅棒（1）的纵向轴线延伸，并且其中所述温度的中心轴线（6）测量装置穿过枢轴（5）。

2. 发明申请

WO2010115542A1 CLAMPING AND CONTACTING DEVICE FOR THIN SILICON RODS 审中-公开
标题翻译：用于薄硅棒的夹紧和接触装置
公开(公告)号：WO2010115542A1
公开(公告)日：2010-10-14
申请号：PCT/EP2010/001985
申请日：2010-03-29
申请人： CENTROTHERM SITEC GMBH , STUBHAN, Frank , LECK, Michael
发明人： STUBHAN, Frank , LECK, Michael
IPC分类号： C01B33/02
CPC分类号： C01B33/035 , C23C16/24 , C30B13/285
摘要： A clamping and contacting device for mounting and electrically contacting thin silicon rods in silicon deposition reactors is disclosed, the clamping and contacting device having a rod holder for receiving one end of a thin silicon rod. The rod holder comprises at least three contact elements disposed around a receiving space for the thin silicon rod. Each of the contact elements forms a contact surface facing towards a receiving space for electrically and mechanically contacts the thin silicon rod, wherein the contact surfaces of adjacent contact elements are spaced apart.
摘要翻译：公开了一种用于在硅沉积反应器中安装和电接触薄硅棒的夹紧和接触装置，夹紧和接触装置具有用于容纳薄硅棒的一端的杆保持器。棒保持器包括围绕用于薄硅棒的容纳空间设置的至少三个接触元件。每个接触元件形成面向容纳空间的接触表面，用于电和机械地接触薄硅棒，其中相邻接触元件的接触表面间隔开。

3. 发明申请

WO2010086363A2 ARRANGEMENT AND METHOD FOR MEASUREMENT OF THE TEMPERATURE AND OF THE THICKNESS GROWTH OF SILICON RODS IN A SILICON DEPOSITION REACTOR 审中-公开
标题翻译：硅沉积反应器中硅棒温度和厚度增长的测量装置和方法
公开(公告)号：WO2010086363A2
公开(公告)日：2010-08-05
申请号：PCT/EP2010/050988
申请日：2010-01-28
申请人： CENTROTHERM SITEC GMBH , WILFRIED, Vollmar , STUBHAN, Frank
发明人： WILFRIED, Vollmar , STUBHAN, Frank
IPC分类号： C01B33/035
CPC分类号： G01B11/0683 , C01B33/035 , C23C16/24 , C23C16/4418 , C23C16/52
摘要： The invention relates to an arrangement for measurement of the temperature and of the thickness growth of silicon rods in a silicon deposition reactor, by means of a pyrometer which is located outside the reactor. The aim of the invention is to provide an arrangement which allows continuous temperature measurement and measurement of the thickness growth throughout the entire deposition process, with adequate accuracy. This is achieved in that a contactlessly operating temperature measurement device (4) is provided for the temperature measurement and is arranged outside the silicon deposition reactor in front of a viewing window (2), in that the temperature measurement device (4) can be pivoted horizontally about a rotation axis (5) by means of a rotating drive (9), wherein the pivoting axis (5) runs parallel to the longitudinal axis of the silicon rod (1), and wherein the centre axis (6) of the temperature measurement device runs through the pivoting axis (5).
摘要翻译：本发明涉及一种用于通过位于反应器外部的高温计来测量硅沉积反应器中的硅棒的温度和厚度增长的装置。本发明的目的是提供一种装置，该装置允许在整个沉积过程中以足够的准确度进行连续的温度测量和厚度增长的测量。这是通过以下方式实现的：无接触地操作的温度测量装置（4）被提供用于温度测量并且被布置在观察窗（2）之前的硅沉积反应器的外部，温度测量装置（4）能够枢转（5）通过旋转驱动器（9）水平围绕旋转轴线（5）旋转，其中枢转轴线（5）平行于硅棒（1）的纵向轴线延伸，并且其中温度测量装置穿过枢轴（5）。

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