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1. 发明申请

WO2015138985A1 WIRELESSLY OPERABLE COOKING APPLIANCE 审中-公开
标题翻译：无线操作烹饪用具
公开(公告)号：WO2015138985A1
公开(公告)日：2015-09-17
申请号：PCT/US2015/020581
申请日：2015-03-13
申请人： SORENSON, Nicole, Ann , SAWYER, Byron, Seth , NOTT, Timothy , DIMARCO, Dominic , EVERETT, David , SMITH, Jacob, Daniel , MARSCHKE, Karl, W.
发明人： SORENSON, Nicole, Ann , SAWYER, Byron, Seth , NOTT, Timothy , DIMARCO, Dominic , EVERETT, David , SMITH, Jacob, Daniel , MARSCHKE, Karl, W.
IPC分类号： A47J37/06
CPC分类号： H05B1/0266 , A47J36/32 , A47J37/0611 , A47J37/0676 , F24C15/105
摘要： A wirelessly operable cooking appliance for cooking food products includes a wireless communication device. A computing device, such as a smartphone, can wirelessly communicate with the cooking appliance to control and monitor the cooking appliance.
摘要翻译：一种用于烹饪食品的无线操作烹饪器具包括无线通信设备。诸如智能电话的计算设备可以与烹饪器具无线通信以控制和监视烹饪器具。

2. 发明申请

WO2007127670A2 BUFFER-LAYER TREATMENT OF MOCVD-GROWN NITRIDE STRUCTURES 审中-公开
标题翻译：缓冲层处理MOCVD-GROWN硝酸盐结构
公开(公告)号：WO2007127670A2
公开(公告)日：2007-11-08
申请号：PCT/US2007067003
申请日：2007-04-19
申请人： APPLIED MATERIALS INC , BOUR DAVID , SMITH JACOB , NIJHAWAN SANDEEP
发明人： BOUR DAVID , SMITH JACOB , NIJHAWAN SANDEEP
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02513 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262
摘要： Methods are disclosed for fabricating a compound nitride semiconductor structure. An amorphous buffer layer that includes nitrogen and a group-III element is formed over a substrate disposed within a substrate processing chamber at a first temperature. The temperature within the chamber is increased to a second temperature at which the amorphous buffer layer coalesces into crystallites over the substrate. The substrate is exposed to a corrosive agent to destroy at least some of the crystallites. A crystalline nitride layer is formed over the substrate at a third temperature using the crystallites remaining after exposure to the corrosive agent as seed crystals. The third temperature is greater than the first temperature. The crystalline nitride layer also includes nitrogen and a group-III element.
摘要翻译：公开了用于制造复合氮化物半导体结构的方法。在第一温度下，在设置在基板处理室内的基板上形成包含氮和III族元素的非晶缓冲层。室内的温度增加到非晶缓冲层在衬底上聚结成微晶的第二温度。将基底暴露于腐蚀剂以破坏至少一些微晶。在第三温度下使用在作为晶种暴露于腐蚀剂之后残留的微晶，在衬底上形成结晶氮化物层。第三温度大于第一温度。结晶氮化物层还包括氮和III族元素。

3. 发明申请

WO2007044145A2 METHOD AND APPARATUS FOR THE LOW TEMPERATURE DEPOSITION OF DOPED SILICON NITRIDE FILMS 审中-公开
标题翻译：氮化硅薄膜低温沉积的方法与装置
公开(公告)号：WO2007044145A2
公开(公告)日：2007-04-19
申请号：PCT/US2006033470
申请日：2006-08-29
申请人： APPLIED MATERIALS INC , IYER R SURYANARAYANAN , SMITH JACOB W , SEUTTER SEAN M , ZHANG KANGZHAN , LAM ANDREW M , CUNNINGHAM KEVIN L , RAMACHANDRAN PHANI
发明人： IYER R SURYANARAYANAN , SMITH JACOB W , SEUTTER SEAN M , ZHANG KANGZHAN , LAM ANDREW M , CUNNINGHAM KEVIN L , RAMACHANDRAN PHANI
IPC分类号： H01L21/00
CPC分类号： C23C16/45565 , C23C16/345 , C23C16/4412 , C23C16/4557
摘要： A method and apparatus for low temperature deposition of doped silicon nitride films is disclosed. The improvements include a mechanical design for a CVD chamber that provides uniform heat distribution for low temperature processing and uniform distribution of process chemicals, and methods for depositing at least one layer comprising silicon and nitrogen on a substrate by heating a substrate, flowing a silicon containing precursor into a processing chamber having a mixing region defined by an adaptor ring and one or more blocker plates and an exhaust system, heating the adapter ring and a portion of the exhaust system, flowing one or more of a hydrogen, germanium, boron, or carbon containing precursor into the processing chamber, and optionally flowing a nitrogen containing precursor into the processing chamber.
摘要翻译：公开了一种用于低温沉积掺杂氮化硅膜的方法和装置。这些改进包括用于CVD室的机械设计，其提供用于低温处理的均匀热分布和工艺化学品的均匀分布，以及用于通过加热衬底在衬底上沉积至少一层包含硅和氮的方法，使含硅前体进入处理室，其具有由适配环和一个或多个阻断板和排气系统限定的混合区域，加热适配环和排气系统的一部分，其中一个或多个氢，锗，硼或含碳前体进入处理室，并任选地将含氮前体流入处理室。

4. 发明申请

WO2008100718A3 SUBSTRATE HEATING METHOD AND APPARATUS 审中-公开
标题翻译：基板加热方法和装置
公开(公告)号：WO2008100718A3
公开(公告)日：2008-10-23
申请号：PCT/US2008052711
申请日：2008-01-31
申请人： APPLIED MATERIALS INC , CUI ANQING , SEUTTER SEAN M , SMITH JACOB W , IYER R SURYANARAYANAN
发明人： CUI ANQING , SEUTTER SEAN M , SMITH JACOB W , IYER R SURYANARAYANAN
IPC分类号： H05B3/68 , G03F7/20 , H01L21/00 , H05B3/08
CPC分类号： H01L21/67103 , H01L21/67109 , H01L21/6875
摘要： Embodiments of substrate heating methods and apparatus are provided herein. In one embodiment, a substrate heater is provided including a heater plate having a top surface and an opposing bottom surface, a recess formed in the top surface, the recess having a feature having an upper surface for supporting a substrate, wherein the depth from a bottom surface of the recess to the upper surface of the feature is at least 5 mils. One or more pads may be disposed in the recess for supporting a substrate. The heater plate may have a thickness of about 19 mm. One or more indentations may be formed in the bottom surface of the recess for altering the rate of heat transfer to a portion of a substrate disposed above the indentation during processing. The heater plate may be utilized in a process chamber for performing heat-assisted processes.
摘要翻译：本文提供了基板加热方法和装置的实施例。在一个实施例中，提供了一种衬底加热器，其包括具有顶表面和相对底表面的加热器板，在顶表面中形成的凹部，该凹部具有用于支撑衬底的上表面的特征，其中，该凹槽的底表面至该特征的上表面至少为5密耳。一个或多个垫可以设置在凹槽中用于支撑基底。加热器板可以具有约19mm的厚度。可以在凹部的底表面中形成一个或多个凹口，用于改变在处理期间设置在压痕之上的衬底的一部分的热传递速率。加热器板可以用在用于执行热辅助工艺的处理室中。

5. 发明申请

WO2008067379A2 SYSTEM AND METHOD FOR DEPOSITING A GASEOUS MIXTURE ONTO A SUBSTRATE SURFACE USING A SHOWERHEAD APPARATUS 审中-公开
标题翻译：使用淋浴器将气体混合物沉积在基底表面上的系统和方法
公开(公告)号：WO2008067379A2
公开(公告)日：2008-06-05
申请号：PCT/US2007/085763
申请日：2007-11-28
申请人： APPLIED MATERIALS, INC. , BOUR, David , WASHINGTON, Lori , NIJHAWAN, Sandeep , STEVENS, Ronald , SMITH, Jacob , TAM, Alexander , MYO, Nyi O. , PARK, Steve , TWIST, Rosemary , KWONG, Garry , SU, Jie
发明人： BOUR, David , WASHINGTON, Lori , NIJHAWAN, Sandeep , STEVENS, Ronald , SMITH, Jacob , TAM, Alexander , MYO, Nyi O. , PARK, Steve , TWIST, Rosemary , KWONG, Garry , SU, Jie
IPC分类号： C23C16/00
CPC分类号： C23C16/45565 , C23C16/45514 , C23C16/45572 , C23C16/45574
摘要： A gaseous mixture is deposited onto a substrate surface using a showerhead. A first plenum of the showerhead has a plurality of channels fluidicly coupled with an interior of a processing chamber. A second plenum gas flows through a plurality of tubes extending from a second plenum of the showerhead through the channels into the interior of the processing chamber. The diameter of the tubes is smaller than the diameter of the channels such that a first plenum gas flows into the interior of the processing chamber through a space defined between the outer surface of the tubes and the surface of the channels. The length and diameter of the tubes determine the level of distribution and the molar ratio of the first gas and the second gas in the gaseous mixture that is deposited on the surface of the substrate.
摘要翻译：使用喷头将气体混合物沉积到基底表面上。喷头的第一增压室具有与处理室的内部流体耦合的多个通道。第二增压气体流过从喷头的第二增压室通过通道延伸到处理室内部的多个管。管的直径小于通道的直径，使得第一增压气体通过限定在管的外表面和通道表面之间的空间流入处理室的内部。管的长度和直径确定沉积在基底表面上的气态混合物中的分布水平和第一气体与第二气体的摩尔比。

6. 发明申请

WO2007121270A1 EPITAXIAL GROWTH OF III-NITRIDE COMPOUND SEMICONDUCTORS STRUCTURES 审中-公开
标题翻译： III-NITRIDE化合物半导体结构的外延生长
公开(公告)号：WO2007121270A1
公开(公告)日：2007-10-25
申请号：PCT/US2007/066468
申请日：2007-04-11
申请人： APPLIED MATERIALS, INC. , NIJHAWAN, Sandeep , BOUR, David , WASHINGTON, Lori , SMITH, Jacob , STEVENS, Ronald , EAGLESHAM, David
发明人： NIJHAWAN, Sandeep , BOUR, David , WASHINGTON, Lori , SMITH, Jacob , STEVENS, Ronald , EAGLESHAM, David
IPC分类号： H01L21/00 , H01L33/00 , C30B25/02 , C30B29/40 , C30B35/00 , C23C16/30 , C23C16/54
CPC分类号： C30B25/14 , C30B29/403 , C30B35/00 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/67155
摘要： Apparatus and methods are described for fabricating a compound nitride semiconductor structure. Group-III and nitrogen precursors are flowed into a first processing chamber to deposit a first layer over a substrate with a thermal chemical-vapor-deposition process. The substrate is transferred from the first processing chamber to a second processing chamber. Group-III and nitrogen precursors are flowed into the second processing chamber to deposit a second layer over the first layer with a thermal chemical-vapor-deposition process. The first and second group-III precursors have different group-III elements.
摘要翻译：描述了用于制造复合氮化物半导体结构的装置和方法。 III族和氮气前体流入第一处理室，以通过热化学气相沉积工艺在衬底上沉积第一层。衬底从第一处理室转移到第二处理室。 III族和氮气前体流入第二处理室以通过热化学气相沉积工艺在第一层上沉积第二层。第一和第二组III前体具有不同的III族元素。

7. 发明申请

WO0063820A8 SYSTEM AND METHOD OF OPERATING A NETWORK-BASED STORE FOR ELECTRONIC COMMERCE 审中-公开
标题翻译：电子商务基于网络的存储系统和方法
公开(公告)号：WO0063820A8
公开(公告)日：2001-11-29
申请号：PCT/US0007874
申请日：2000-03-24
申请人： HALLMARK CARDS , SMITH JACOB P
发明人： SMITH JACOB P
IPC分类号： G06Q30/00 , G07B17/00 , G06F17/60
CPC分类号： G06Q30/06 , G07B17/00024 , G07B2017/00072
摘要： L'invention concerne un magasin web pour commerce électronique améliorant et facilitant la sélection et la commande de produits effectuées par des clients afin d'assurer des achats en ligne plus performants. De nombreuses combinaisons de produits, notamment des cadeaux et des cartes de voeux peuvent être commandés. L'utilisation de carnets d'adresses de clients améliore le service ayant trait au rappel d'échéances combiné à des recommandations adressées aux destinataires et concernant les occasions associées. L'exécution des commandes est effectuée par l'opérateur ou par des vendeurs, sur base contractuelle, du magasin web. Le mécanisme de confirmation efficace sert à garantir la livraison des produits commandés.

8. 发明申请

WO2009142811A2 ARROW SHAFT WITH TRANSITION PORTION 审中-公开
标题翻译：具有过渡部分的箭头轴
公开(公告)号：WO2009142811A2
公开(公告)日：2009-11-26
申请号：PCT/US2009/037964
申请日：2009-03-23
申请人： EASTON TECHNICAL PRODUCTS, INC. , SMITH, Jacob, C.
发明人： SMITH, Jacob, C.
IPC分类号： F42B6/04
CPC分类号： F42B6/04
摘要： An arrow shaft comprising a first shaft portion and a second shaft portion is disclosed. The second shaft portion of the arrow shaft may have a larger outer diameter than the first shaft portion. The arrow shaft may also comprise a transition portion between the first shaft portion and the second shaft portion. An arrow comprising an arrow shaft, a first shaft portion, a second shaft portion, a nock, and a point is also disclosed. The first shaft portion of the arrow may comprise a lengthwise segment of the arrow shaft terminating at an end of the arrow shaft adjacent to the arrow nock. The second shaft portion of the arrow may comprise a lengthwise segment of the arrow shaft terminating at an end of the arrow shaft adjacent to the arrow point.
摘要翻译：公开了一种包括第一轴部分和第二轴部分的箭头轴。箭头轴的第二轴部分可以具有比第一轴部分更大的外径。箭头轴还可以包括在第一轴部分和第二轴部分之间的过渡部分。还公开了包括箭头轴，第一轴部分，第二轴部分，甲板和点的箭头。箭头的第一轴部分可以包括箭头轴的纵向段，其终止于与箭头nock相邻的箭头轴的端部。箭头的第二轴部分可以包括箭头轴的纵向段，其终止于与箭头点相邻的箭头轴的端部。

9. 发明申请

WO2008024874A2 METHOD FOR MEASURING PRECURSOR AMOUNTS IN BUBBLER SOURCES 审中-公开
标题翻译：测量泡沫源前体数量的方法
公开(公告)号：WO2008024874A2
公开(公告)日：2008-02-28
申请号：PCT/US2007/076570
申请日：2007-08-22
申请人： APPLIED MATERIALS, INC. , STEVENS, Ronald , MCDOUGALL, Brendan , SMITH, Jacob , KWONG, Garry , NIJHAWAN, Sandeep , WASHINGTON, Lori
发明人： STEVENS, Ronald , MCDOUGALL, Brendan , SMITH, Jacob , KWONG, Garry , NIJHAWAN, Sandeep , WASHINGTON, Lori
IPC分类号： C23C16/52 , C23C16/00
CPC分类号： C23C16/4482
摘要： Methods are disclosed of determining a fill level of a precursor in a bubbler. The bubbler is fluidicly coupled with a substrate processing chamber through a vapor-delivery system. The bubbler and vapor-delivery system are backfilled with a known dose of a backfill gas. A pressure and temperature of the backfill gas are determined, permitting a total volume for the backfill gas in the bubbler and vapor-delivery system to be determined by application of a gas law. The fill level of the precursor in the bubbler is determined as a difference between (1) a total volume of the bubbler and vapor-delivery system and (2) the determined total volume for the backfill gas.
摘要翻译：公开了确定起泡器中前体的填充水平的方法。鼓泡器通过蒸汽输送系统与基底处理室流体耦合。鼓泡器和蒸汽输送系统用已知剂量的回填气体回填。确定回填气体的压力和温度，允许通过应用气体法来确定起泡器和蒸汽输送系统中回填气体的总体积。起泡器中前体的填充水平被确定为（1）起泡器和蒸汽输送系统的总体积和（2）回填气体的确定总体积之间的差值。

10. 发明申请

WO2006132878A3 SUBSTRATE SUPPORT 审中-公开
标题翻译：基板支持
公开(公告)号：WO2006132878A3
公开(公告)日：2007-11-29
申请号：PCT/US2006021077
申请日：2006-05-31
申请人： APPLIED MATERIALS INC , SMITH JACOB , TAM ALEXANDER , IYER R SURYANARAYANAN , SEUTTER SEAN , TRAN BINH , MERRY NIR , BRAILOVE ADAM , SHYDO JR ROBERT , ANDREWS ROBERT , ROBERTS FRANK , SMICK THEODORE , RYDING GEOFFREY
发明人： SMITH JACOB , TAM ALEXANDER , IYER R SURYANARAYANAN , SEUTTER SEAN , TRAN BINH , MERRY NIR , BRAILOVE ADAM , SHYDO JR ROBERT , ANDREWS ROBERT , ROBERTS FRANK , SMICK THEODORE , RYDING GEOFFREY
IPC分类号： C23C16/458 , H01L21/00
CPC分类号： H01L21/68792 , C23C16/4584 , H01L21/67126 , H01L21/68742
摘要： A method and apparatus for processing a substrate utilizing a rotating substrate support are disclosed herein. In one embodiment, an apparatus for processing a substrate includes a chamber having a substrate support assembly disposed within the chamber. The substrate support assembly includes a substrate support having a support surface and a heater disposed beneath the support surface. A shaft is coupled to the substrate support and a motor is coupled to the shaft through a rotor to provide rotary movement to the substrate support. A seal block is disposed around the rotor and forms a seal therewith. The seal block has at least one seal and at least one channel disposed along the interface between the seal block and the shaft. A port is coupled to each channel for connecting to a pump. A lift mechanism is coupled to the shaft for raising and lowering the substrate support.
摘要翻译：本文公开了一种利用旋转衬底支撑件来处理衬底的方法和装置。在一个实施例中，用于处理衬底的装置包括具有设置在腔室内的衬底支撑组件的室。衬底支撑组件包括具有支撑表面的衬底支撑件和设置在支撑表面下方的加热器。轴连接到基板支撑件，并且电机通过转子联接到轴，以向基板支撑件提供旋转运动。密封块设置在转子周围并与其形成密封。密封块具有至少一个密封件和沿密封块和轴之间的界面设置的至少一个通道。端口连接到每个通道以连接到泵。升降机构联接到轴上以升高和降低基板支撑。

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