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1. 发明申请

WO2012164163A1 A METHOD AND A STRUCTURE FOR PROTECTING A PASSIVATING LAYER 审中-公开
标题翻译：用于保护钝化层的方法和结构
公开(公告)号：WO2012164163A1
公开(公告)日：2012-12-06
申请号：PCT/FI2012/050514
申请日：2012-05-28
申请人： BENEQ OY , PAKKALA, Arto , AHONEN, Sampo , SNECK, Sami , SKARP, Jarmo , LI, Shuo
发明人： PAKKALA, Arto , AHONEN, Sampo , SNECK, Sami , SKARP, Jarmo , LI, Shuo
IPC分类号： C23C16/40 , C23C16/455 , H01L31/18 , H01L31/0216 , H01L21/02
CPC分类号： H01L31/1868 , C23C16/405 , H01L31/02167 , Y02E10/50 , Y02P70/521
摘要： The present invention relates to a method for protecting a passivating layer (2) comprising aluminum oxide and being formed on a surface of a silicon substrate (1) from effects caused by chemical interaction between the passivating layer (2) and a conducting electrode (4) by fabricating a barrier layer (3) between the passivating layer (2) and the conducting electrode (4). Further, the present invention relates to a corresponding structure and its use.
摘要翻译：本发明涉及一种保护包含氧化铝的钝化层（2）的方法，该钝化层（2）由于钝化层（2）和导电电极（4）之间的化学相互作用引起的影响而形成在硅衬底（1）的表面上）通过在钝化层（2）和导电电极（4）之间制造阻挡层（3）。此外，本发明涉及相应的结构及其用途。

2. 发明申请

WO2011077008A2 A THIN FILM PHOTOVOLTAIC CELL, A METHOD FOR MANUFACTURING, AND USE 审中-公开
标题翻译：一种薄膜光伏电池，一种制造和使用的方法
公开(公告)号：WO2011077008A2
公开(公告)日：2011-06-30
申请号：PCT/FI2010051072
申请日：2010-12-22
申请人： BENEQ OY , SKARP JARMO
发明人： SKARP JARMO
IPC分类号： H01L31/18 , H01L31/072
CPC分类号： H01L31/072 , H01L31/0296 , H01L31/02963 , H01L31/1828 , H01L31/1836 , Y02E10/543 , Y02P70/521
摘要： A thin film photovoltaic cell (10) comprises an n-type semiconductor window layer (40), a p-type semiconductor absorption layer (5) and a pn-junction (6) at the interface between these two layers, wherein the p-type semiconductor absorption layer is formed of cadmium telluride CdTe. According to the present invention, the n-type semiconductor window layer (40) comprises zinc oxide/sulfide Zn (O,S).
摘要翻译：薄膜光伏电池（10）在这两层之间的界面处包括n型半导体窗口层（40），p型半导体吸收层（5）和pn结（6）型半导体吸收层由碲化镉CdTe形成。根据本发明，n型半导体窗口层（40）包括氧化锌/硫化物Zn（O，S）。

3. 发明申请

WO2011141628A1 A METHOD FOR PRODUCING A DEPOSIT AND A DEPOSIT ON A SURFACE OF A SILICON SUBSTRATE 审中-公开
标题翻译：一种在硅衬底的表面上生成沉积物和沉积物的方法
公开(公告)号：WO2011141628A1
公开(公告)日：2011-11-17
申请号：PCT/FI2011/050417
申请日：2011-05-06
申请人： BENEQ OY , SKARP, Jarmo
发明人： SKARP, Jarmo
IPC分类号： C23C16/40 , C23C16/455
CPC分类号： H01L21/0228 , C23C16/403 , C23C16/45525 , H01L21/02178
摘要： A deposit and a method for producing a deposit on a surface of a silicon substrate. The deposit comprises aluminum oxide, and the method comprises in any order the alternating steps of a) introducing into a reaction space one of water and ozone as a precursor for oxygen, b) introducing into a reaction space the other of water and ozone as a precursor for oxygen, c) introducing into a reaction space a precursor for aluminum and subsequently purging the reaction space;with the provisions that when step a) or step b) precedes step c) then the reaction space is purged before step c), and that the reaction space is not purged between step a) and step b), when step a) precedes step b) or when step b) precedes step a).
摘要翻译：沉积物和在硅衬底的表面上产生沉积物的方法。该沉积物包含氧化铝，并且该方法以任何顺序包括以下交替步骤：a）将作为氧的前体的水和臭氧之一引入到反应空间中，b）将反应空间中的另一个作为水和臭氧引入反应空间氧的前体，c）向反应空间中引入铝的前体，随后吹扫反应空间;规定当步骤a）或步骤b）在步骤c）之前时，反应空间在步骤c）之前被清除，并且当步骤a）在步骤b）之前或当步骤b）在步骤a）之前时，反应空间不在步骤a）和步骤b）之间清除。

4. 发明申请

WO2011077008A3 A THIN FILM PHOTOVOLTAIC CELL, A METHOD FOR MANUFACTURING, AND USE 审中-公开
公开(公告)号：WO2011077008A3
公开(公告)日：2011-06-30
申请号：PCT/FI2010/051072
申请日：2010-12-22
申请人： BENEQ OY , SKARP, Jarmo
发明人： SKARP, Jarmo
IPC分类号： H01L31/18 , H01L31/0296 , H01L31/072
摘要： A thin film photovoltaic cell (10) comprises an n-type semiconductor window layer (40), a p-type semiconductor absorption layer (5) and a pn-junction (6) at the interface between these two layers, wherein the p-type semiconductor absorption layer is formed of cadmium telluride CdTe. According to the present invention, the n-type semiconductor window layer (40) comprises zinc oxide/sulfide Zn (O,S).

5. 发明申请

WO2011073508A1 PROCESS AND APPARATUS FOR PRODUCING A SUBSTRATE 审中-公开
标题翻译：用于生产基材的方法和装置
公开(公告)号：WO2011073508A1
公开(公告)日：2011-06-23
申请号：PCT/FI2010/051016
申请日：2010-12-13
申请人： BENEQ OY , VAINIO, Tommi , SKARP, Jarmo
发明人： VAINIO, Tommi , SKARP, Jarmo
IPC分类号： C23C4/12 , B82Y20/00
CPC分类号： H01L31/0392 , B82Y20/00 , C23C4/129 , G02B5/008 , H01L31/054 , Y02E10/52
摘要： Process for producing a solar cell substrate (1), where metal particles (3) are deposited on the surface of substrate (2). Metal particles (3) are produced by liquid flame spraying method in such a way that the mean diameter of the particles to be between 30 nm and 150 nm and the deposition process is controlled in such a way that the average distance (dis) between particles (3) is not more than four (4) times the mean diameter of particles (3). Apparatus for carrying out such process.
摘要翻译：太阳能电池基板（1）的制造方法，其中金属颗粒（3）沉积在基板（2）的表面上。通过液体火焰喷涂法制造金属颗粒（3），使得颗粒的平均直径在30nm和150nm之间，并且沉积过程被控制为使得颗粒之间的平均距离（dis）（3）不超过颗粒（3）的平均直径的四（4）倍。用于进行这种处理的装置。

6. 发明申请

WO2010089460A1 GATE ARRANGEMENT, PRODUCTION LINE AND METHOD 审中-公开
标题翻译：盖茨布置，生产线和方法
公开(公告)号：WO2010089460A1
公开(公告)日：2010-08-12
申请号：PCT/FI2010/050079
申请日：2010-02-08
申请人： BENEQ OY , SOININEN, Pekka , SKARP, Jarmo
发明人： SOININEN, Pekka , SKARP, Jarmo
IPC分类号： C23C16/54 , C23C14/56 , C23C16/455 , C23C16/44 , C03C17/00
CPC分类号： C23C16/54 , C23C14/56
摘要： The invention relates to a gate arrangement (10, 11) through which a substrate (8) may be introduced into a process chamber (4) and/or removed from the process chamber (4), the gate arrangement (10, 11) comprising a separating valve (12, 22) through which the substrate (8) is led into the process chamber (4) and/or removed from the process chamber (4). In accordance with the invention, the gate arrangement (10, 11) comprises in connection with the separating valve (12, 22) at least one diffusion gate (14, 16, 24, 26) which the substrate (8) substantially obstructs while passing through the gate arrangement (10, 11), when it is fed into and/or removed from the process chamber (4). The invention also relates to a production line including the gate arrangement (10, 11) and to a method for introducing the substrate (8) into the process chamber (2, 4, 6) and for removing it therefrom.
摘要翻译：本发明涉及一种栅极装置（10,11），其中基板（8）可以通过该栅极装置引入处理室（4）和/或从处理室（4）中移出，门装置（10,11）包括分离阀（12,22），衬底（8）通过该分离阀被引入处理室（4）和/或从处理室（4）移除。根据本发明，门装置（10,11）包括与分离阀（12,22）连接的至少一个扩散门（14,16,24,26），衬底（8）在通过时基本上阻碍通过门装置（10,11），当其被输送到处理室（4）和/或从处理室（4）中取出时）。本发明还涉及一种包括门装置（10,11）的生产线以及用于将基板（8）引入处理室（2,4,6）并将其从其中移出的方法。

7. 发明申请

WO2010146234A1 APPARATUS 审中-公开
标题翻译：仪器
公开(公告)号：WO2010146234A1
公开(公告)日：2010-12-23
申请号：PCT/FI2010/050492
申请日：2010-06-14
申请人： BENEQ OY , SOININEN, Pekka , SKARP, Jarmo
发明人： SOININEN, Pekka , SKARP, Jarmo
IPC分类号： C23C16/54 , H01L21/00
CPC分类号： C23C16/54 , C23C16/45546 , H01L21/6719 , H01L21/67207
摘要： The invention relates to an apparatus (1) for carrying out atomic layer deposition onto a surface of a substrate by exposing the surface of the substrate (11) to alternate starting material surface reactions, the apparatus comprising two or more low-pressure chambers (2), two or more separate reaction chambers (8, 12) arranged to be placed inside the low-pressure chambers (2), and at least one starting material feed system (5) common to two or more low-pressure chambers (2) for carrying out atomic layer deposition. According to the invention, the apparatus comprises at least one loading device (6, 16) arranged to load and unload substrates (11) to/from the reaction chamber (8, 12) and further to load and unload the reaction chambers (8, 12) to/from the low-pressure chambers (2).
摘要翻译：本发明涉及一种用于通过将基板（11）的表面暴露于交替的起始材料表面反应来进行原子层沉积到基板的表面上的装置（1），该装置包括两个或更多个低压室（2 ），布置成放置在低压室（2）内的两个或更多个分离的反应室（8,12）和至少一个两个或更多个低压室（2）共用的原料供给系统（5）用于进行原子层沉积。根据本发明，该装置包括至少一个装载装置（6,16），其被布置成将载体（11）装载到反应室（8,12）上并将其卸载，并进一步装载和卸载反应室 12）到/从低压室（2）。

8. 发明申请

WO2010089461A1 ALD REACTOR, METHOD FOR LOADING ALD REACTOR, AND PRODUCTION LINE 审中-公开
标题翻译： ALD反应器，装载ALD反应器的方法和生产线
公开(公告)号：WO2010089461A1
公开(公告)日：2010-08-12
申请号：PCT/FI2010/050080
申请日：2010-02-08
申请人： BENEQ OY , SOININEN, Pekka , SKARP, Jarmo
发明人： SOININEN, Pekka , SKARP, Jarmo
IPC分类号： C23C16/455 , C23C16/458 , C23C16/54
CPC分类号： C23C16/45544 , C23C16/45517 , C23C16/458 , C23C16/54
摘要： The invention relates to an ALD reactor (1 ) for treating one or more substrates (2), the ALD reactor (1 ) comprising at least one reaction chamber which comprises a front plate (6) including gas connections (10) for introducing starting materials, flushing gases and the like gases into the reaction chamber. In accordance with the invention, the front plate (6) is arranged for being placed over the substrate (2) for closing the reaction chamber and at distance from the substrate surface for opening the reaction chamber such that the substrate (2) is arranged for being loaded below, above or in front of the front plate (6), when the reaction chamber is in the open state, in which the front plate (6) is at a distance from the substrate (2) and such that the substrate (2) is treatable by the ALD method in the closed state of the reaction chamber, in which the front plate is placed onto the substrate (2). The invention also relates to a production line for treating a substrate (2) and to a method for loading a substrate into an ALD reactor.
摘要翻译：本发明涉及一种用于处理一个或多个基底（2）的ALD反应器（1），所述ALD反应器（1）包括至少一个反应室，所述反应室包括前板（6），前板（6）包括气体连接（10），将气体和类似气体冲入反应室。根据本发明，前板（6）布置成放置在基板（2）上方，用于关闭反应室，并且距离基板表面一定距离以打开反应室，使得基板（2）布置成当反应室处于打开状态时，在前板（6）离基板（2）一定距离处，并且使得基板（6） 2）可以通过ALD方法在反应室的关闭状态下处理，其中前板被放置在基板（2）上。本发明还涉及用于处理基底（2）的生产线和将基底装入ALD反应器的方法。

9. 发明申请

WO0231875A3 DIELECTRIC INTERFACE FILMS AND METHODS THEREFOR 审中-公开
标题翻译：电介质接口膜及其方法
公开(公告)号：WO0231875A3
公开(公告)日：2003-01-09
申请号：PCT/US0142167
申请日：2001-09-11
申请人： ASM INC , HAUKKA SUVI , SKARP JARMO , TUOMINEN MARKO
发明人： HAUKKA SUVI , SKARP JARMO , TUOMINEN MARKO
IPC分类号： H01L27/04 , C23C16/40 , C23C16/44 , C23C16/455 , H01L21/02 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L27/108 , H01L29/78
CPC分类号： H01L21/3162 , C23C16/40 , C23C16/403 , C23C16/45529 , H01L21/02178 , H01L21/02189 , H01L21/02192 , H01L21/022 , H01L21/0228 , H01L21/02299 , H01L21/3142 , H01L21/31604 , H01L28/56 , Y10S977/891
摘要： An ultrathin aluminum oxide and lanthanide layers, particularly formed by an atomic layer deposition (ALD) type process, serve as interface layers between two or more materials. The interface layers can prevent oxidation of a substrate and can prevent diffusion of molecules between the materials. In the illustrated embodiments, a high-k dielectric material is sandwiched between two layers of aluminum oxide or lanthanide oxide in the formation of a transistor gate dielectric or a memory cell dielectric. Aluminum oxides can serve as a nucleation layer with less than a full monolayer of aluminum oxide. One monolayer or greater can also serve as a diffusion barrier, protecting the substrate from oxidation and the high-k dielectric from impurity diffusion. Nanolaminates can be formed with multiple alternating interface layers and high-k layers, where intermediate interface layers can break up the crystal structure of the high-k materials and lower leakage levels.
摘要翻译：特别是通过原子层沉积（ALD）型方法形成的超薄氧化铝和镧系元素层用作两种或多种材料之间的界面层。界面层可以防止基底的氧化并且可以防止分子在材料之间的扩散。在所示实施例中，在形成晶体管栅极电介质或存储单元电介质时，高k介电材料夹在两层氧化铝或镧系元素氧化物之间。氧化铝可用作具有少于全部氧化铝单层的成核层。一个或多个单层也可以用作扩散阻挡层，保护基底免受氧化和高k电介质的杂质扩散。纳米材料可以形成多个交替界面层和高k层，其中中间界面层可以分解高k材料的晶体结构并降低泄漏水平。

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