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1. 发明申请

WO2006083112A1 SPIN QUBIT-BASED QUANTUM COMPUTING LOGIC GATE 审中-公开
标题翻译：旋转基于QUBIT的量子计算逻辑门
公开(公告)号：WO2006083112A1
公开(公告)日：2006-08-10
申请号：PCT/KR2006/000358
申请日：2006-02-01
申请人： CHOI, Jung-beom , LEE, Sang-don , SHIN, Seung-jun
发明人： CHOI, Jung-beom , LEE, Sang-don , SHIN, Seung-jun
IPC分类号： H01L27/12
CPC分类号： B82Y10/00 , G06N99/002 , H01L27/1203 , H01L29/127 , H01L29/66439 , H01L29/7613 , H01L29/778
摘要： The present invention relates to a spin qubit-based quantum computing logic gate. The manufacturing method of the present invention includes the step of forming a conduction channel and multi-lateral gates vertical to the conduction channel on the same plane or on a gate oxide film in such a manner as to be spaced apart from each other by several tens of nano meters or less, wherein the conduction channel connects a source and drain to a top-Si layer of a Silicon On Insulator (SOI) substrate and a dual quantum dot having a line width and length of several tens of nano meters will be formed in the conduction channel, doping the remaining portions other than the dual quantum dot, forming the gate oxide film or an interlayer insulation layer corresponding to a proposed structure, forming a control gate inducing a two-dimensional electron gas layer in the conduction channel, and performing a typical metallization process.
摘要翻译：本发明涉及一种基于自旋量子位的量子计算逻辑门。本发明的制造方法包括在同一平面或栅极氧化膜上形成与导电沟道垂直的导电沟道和多侧栅极的步骤，其间隔开几十个的纳米级以下，其中，导电沟道将源极和漏极连接到绝缘体上硅衬底（SOI）衬底的顶部Si层，并且将形成具有几十纳米的线宽和长度的双量子点在导电沟道中，掺杂除了双量子点之外的其余部分，形成对应于所提出的结构的栅极氧化膜或层间绝缘层，形成在导电沟道中诱导二维电子气层的控制栅极，以及执行典型的金属化工艺。

2. 发明申请

WO2008044843A1 NANOSCALE MULTI-JUNCTION QUANTUM DOT DEVICE AND FABRICATION METHOD THEREOF 审中-公开
标题翻译：纳米多功能量子装置及其制造方法
公开(公告)号：WO2008044843A1
公开(公告)日：2008-04-17
申请号：PCT/KR2007/004891
申请日：2007-10-08
申请人： CHUNGBUK NATIONAL UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION , CHOI, Jung Bum , LEE, Jong Jin , SHIN, Seung-Jun , CHUNG, Rae-Sik
发明人： CHOI, Jung Bum , LEE, Jong Jin , SHIN, Seung-Jun , CHUNG, Rae-Sik
IPC分类号： H01L21/027
CPC分类号： H01L21/32139 , B82Y10/00 , H01L21/0277 , H01L29/127 , H01L29/66439 , H01L29/7613
摘要： The present invention relates to a method of fabricating a nanoscale multi-junction quantum dot device wherein it can minimize constraints depending on the number or shape of patterns and a line width, and in particular, overcome shortcomings depending on the proximity effect occurring between patterns while employing the advantages of electron beam lithography to the utmost by forming a new conductive layer between the patterns and utilizing it as a new pattern.
摘要翻译：本发明涉及一种制造纳米级多结量子点器件的方法，其中它可以根据图案的数量或形状以及线宽来最小化约束，并且特别地，克服了取决于在图案之间发生的邻近效应的缺点，而通过在图案之间形成新的导电层并将其用作新图案，最大限度地利用电子束光刻的优点。

3. 发明申请

WO2009102165A2 SINGLE ELECTRON TRANSISTOR OPERATING AT ROOM TEMPERATURE AND MANUFACTURING METHOD FOR SAME 审中-公开
标题翻译：在室温下工作的单电子晶体管及其制造方法
公开(公告)号：WO2009102165A2
公开(公告)日：2009-08-20
申请号：PCT/KR2009000707
申请日：2009-02-13
申请人： NAT UNIV CHUNGBUK IND ACAD , CHOI JUNG BUM , SHIN SEUNG JUN
发明人： CHOI JUNG BUM , SHIN SEUNG JUN
IPC分类号： H01L29/775 , H01L21/33
CPC分类号： H01L29/7613 , B82Y10/00 , H01L29/66439
摘要： The present invention relates to a single electron transistor operating at room temperature and a manufacturing method for same. More particularly, the present invention relates to a single electron transistor operating at room temperature, in which a quantum dot or a silicide quantum dot using a nanostructure is formed and a gate is positioned on the quantum dot so as to minimize influence on a tunneling barrier and achieve improved effectiveness in electric potential control for the quantum dot and operating efficiency of the transistor, and a manufacturing method for same.
摘要翻译：本发明涉及在室温下工作的单电子晶体管及其制造方法。更具体地说，本发明涉及一种在室温下工作的单电子晶体管，其中形成使用纳米结构的量子点或硅化物量子点，并且栅极位于量子点上，以便将对隧道势垒并且提高了量子点的电位控制和晶体管的工作效率，并且提供了该晶体管的制造方法。

4. 发明申请

WO2007078025A1 TRANSFORMATION METHOD OF G-CODE INTO STEP-NC PART PROGRAM 审中-公开
标题翻译： G代码转换为STEP-NC零件程序的转换方法
公开(公告)号：WO2007078025A1
公开(公告)日：2007-07-12
申请号：PCT/KR2006/000329
申请日：2006-01-31
申请人： POSTECH FOUNDATION , SUH, Suk Hwan , SHIN, Seung Jun
发明人： SUH, Suk Hwan , SHIN, Seung Jun
IPC分类号： G05B19/18
CPC分类号： G05B19/40931 , G05B2219/35054 , G05B2219/35216 , Y02P90/265
摘要： The present invention relates to a method of transforming a G-code type part program into a STEP-NC language type part program, and more particularly, to a method for enabling a G-code type part program mainly used in the field to be easily applied to a STEP-NC controller without a troublesome correction by automatically creating a STEP-NC language type part program, which is composed of machining operation information, manufacturing feature information, machining strategy information and the like, through a process of analyzing G-codes from the G-code type part program and tool information. A method of transforming a G-code into a STEP-NC part program comprises the steps of: receiving a G-code part program, tools and a numerical controller; creating G-code block in¬ formation; partitioning the entire part program on a workingstep basis; creating machining strategy information; and creating the STEP-NC part program by arranging the machining workingsteps.
摘要翻译：本发明涉及一种将G代码型零件程序变换为STEP-NC语言型零件程序的方法，更具体地说，涉及一种能够容易地在该领域中主要使用的G代码型零件程序的方法通过分析G代码的处理，通过自动生成由加工操作信息，制造特征信息，加工策略信息等构成的STEP-NC语言型零件程序，将其应用于STEP-NC控制器而无需麻烦的校正从G代码类型的零件程序和工具信息。将G代码变换为STEP-NC零件程序的方法包括以下步骤：接收G代码部件程序，工具和数字控制器; 创建G代码块形成; 在工作阶段分割整个零件程序; 制造加工策略信息; 并通过安排加工工作步骤创建STEP-NC零件程序。

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