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1. 发明申请

WO2005122253A2 PE-ALD OF TaN DIFFUSION BARRIER REGION ON LOW-K MATERIALS 审中-公开
标题翻译：在低K材料上的TaN扩散障碍区的PE-ALD
公开(公告)号：WO2005122253A2
公开(公告)日：2005-12-22
申请号：PCT/US2005/018953
申请日：2005-05-31
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , DUNN, Derren, N. , KIM, Hyungjun , ROSSNAGEL, Stephen, M. , SEO, Soon-Cheon
发明人： DUNN, Derren, N. , KIM, Hyungjun , ROSSNAGEL, Stephen, M. , SEO, Soon-Cheon
IPC分类号： H01L23/52
CPC分类号： H01L21/76846 , H01L21/28562 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： Methods of depositing a tantalum nitride (TaN) diffusion barrier region on low-k materials. The methods include forming a protective layer (104) on the low-k material substrate (102) by performing plasma-enhanced atomic layer deposition (PE-ALD) from tantalum-based precursor and a nitrogen plasma in a chamber. The protective layer (104) has a nitrogen content greater than its tantalum content. A substantially stoichiometric tantalum-nitride layer is then formed by performing PE-ALD from the tantalum-based precursor and a plasma including hydrogen and nitrogen. The invention also includes the tantalum-nitride diffusion barrier region (108) so formed. In one embodiment, the metal precursor includes tantalum penta-chloride (TaC1 5 ). The invention generates a sharp interface between low-k materials and liner materials.
摘要翻译：在低k材料上沉积氮化钽（TaN）扩散阻挡区域的方法。所述方法包括通过从钽基前体和室中的氮等离子体进行等离子体增强原子层沉积（PE-ALD）在低k材料衬底（102）上形成保护层（104）。保护层（104）的氮含量大于钽的含量。然后通过从钽基前体和包括氢和氮的等离子体中进行PE-ALD形成基本上化学计量的氮化钽层。本发明还包括如此形成的氮化钽 - 氮化物扩散阻挡区域（108）。在一个实施方案中，金属前体包括五氯化钽（TaC15）。本发明在低k材料和衬垫材料之间产生尖锐的界面。

2. 发明申请

WO2011087978A1 NANOPOROUS SEMI-PERMEABLE MEMBRANE AND METHODS FOR FABRICATING THE SAME 审中-公开
标题翻译：纳米半透膜及其制造方法
公开(公告)号：WO2011087978A1
公开(公告)日：2011-07-21
申请号：PCT/US2011/020653
申请日：2011-01-10
申请人： INTERNATIONAL BUSINESS MACHINES CORP. , AFZALI-ARDAKANI, Ali , ROSSNAGEL, Stephen, M.
发明人： AFZALI-ARDAKANI, Ali , ROSSNAGEL, Stephen, M.
IPC分类号： B01D71/00 , C02F1/44
CPC分类号： B01D67/0065 , B01D61/025 , B01D67/0088 , B01D71/025 , B01D2313/90 , C02F1/441 , C02F2103/08 , C02F2305/08 , Y02A20/131
摘要： A filter includes a membrane having a plurality of nanochannels formed therein. Functionalized nanoparticles are deposited through self assembly onto surfaces defining the nanochannels so as to decrease the final diameter of the membrane. Methods for making and using the filter are also provided.
摘要翻译：过滤器包括其中形成有多个纳米通道的膜。官能化纳米颗粒通过自组装沉积到限定纳米通道的表面上，以便降低膜的最终直径。还提供了制造和使用过滤器的方法。

3. 发明申请

WO2013006531A1 4-TERMINAL PIEZOELECTRONIC TRANSISTOR (PET) 审中-公开
标题翻译： 4端子电子晶体管（PET）
公开(公告)号：WO2013006531A1
公开(公告)日：2013-01-10
申请号：PCT/US2012/045197
申请日：2012-07-02
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , ELMEGREEN, Bruce, G. , MARTYNA, Glenn, J. , NEWNS, Dennis, M. , ROSSNAGEL, Stephen, M. , SOLOMON, Paul, M.
发明人： ELMEGREEN, Bruce, G. , MARTYNA, Glenn, J. , NEWNS, Dennis, M. , ROSSNAGEL, Stephen, M. , SOLOMON, Paul, M.
IPC分类号： H01L41/00
CPC分类号： H01L49/00 , H01L2224/04105 , H01L2224/19 , H01L2224/32225 , H01L2224/73267 , H01L2224/92244 , Y10T29/42
摘要： A 4-terminal piezoelectronic transistor (PET) which includes a piezoelectric (PE) material disposed between first and second electrodes; an insulator material disposed on the second electrode; a third electrode disposed on the insulator material and a piezoresistive (PR) material disposed between the third electrode and a fourth electrode. An applied voltage across the first and second electrodes causing a pressure from the PE material to be applied to the PR material through the insulator material, the electrical resistance of the PR material being dependent upon the pressure applied by the PE material. The first and second electrodes are electrically isolated from the third and fourth electrodes. Also disclosed are logic devices fabricated from 4-terminal PETs and a method of fabricating a 4-terminal PET.
摘要翻译： 4端子压电晶体管（PET），其包括设置在第一和第二电极之间的压电（PE）材料; 设置在所述第二电极上的绝缘体材料; 设置在绝缘体材料上的第三电极和设置在第三电极和第四电极之间的压阻（PR）材料。在第一和第二电极两端施加的电压导致来自PE材料的压力通过绝缘体材料施加到PR材料上，PR材料的电阻取决于PE材料施加的压力。第一和第二电极与第三和第四电极电隔离。还公开了由4端子PET制造的逻辑器件和制造4端子PET的方法。

4. 发明申请

WO2005122253A3 PE-ALD OF TaN DIFFUSION BARRIER REGION ON LOW-K MATERIALS 审中-公开
标题翻译：在低K材料上的TaN扩散障碍区的PE-ALD
公开(公告)号：WO2005122253A3
公开(公告)日：2006-12-14
申请号：PCT/US2005018953
申请日：2005-05-31
申请人： IBM , DUNN DERREN N , KIM HYUNGJUN , ROSSNAGEL STEPHEN M , SEO SOON-CHEON
发明人： DUNN DERREN N , KIM HYUNGJUN , ROSSNAGEL STEPHEN M , SEO SOON-CHEON
IPC分类号： H01L21/283 , H01L21/285 , H01L21/4763 , H01L21/52 , H01L21/768 , H01L23/52 , H01L23/532
CPC分类号： H01L21/76846 , H01L21/28562 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： Methods of depositing a tantalum nitride (TaN) diffusion barrier region on low-k materials. The methods include forming a protective layer (104) on the low-k material substrate (102) by performing plasma-enhanced atomic layer deposition (PE-ALD) from tantalum-based precursor and a nitrogen plasma in a chamber. The protective layer (104) has a nitrogen content greater than its tantalum content. A substantially stoichiometric tantalum-nitride layer is then formed by performing PE-ALD from the tantalum-based precursor and a plasma including hydrogen and nitrogen. The invention also includes the tantalum-nitride diffusion barrier region (108) so formed. In one embodiment, the metal precursor includes tantalum penta-chloride (TaC1 5 ). The invention generates a sharp interface between low-k materials and liner materials.
摘要翻译：在低k材料上沉积氮化钽（TaN）扩散阻挡区域的方法。所述方法包括通过从钽基前体和室中的氮等离子体进行等离子体增强的原子层沉积（PE-ALD）在低k材料衬底（102）上形成保护层（104）。保护层（104）的氮含量大于钽的含量。然后通过从钽基前体和包括氢和氮的等离子体中进行PE-ALD形成基本上化学计量的氮化钽层。本发明还包括如此形成的氮化钽 - 氮化物扩散阻挡区域（108）。在一个实施方案中，金属前体包括五氯化钽（TaCl 5 N 5）。本发明在低k材料和衬垫材料之间产生尖锐的界面。

5. 发明申请

WO2013037240A1 CHARGED ENTITIES AS LOCOMOTIVE TO CONTROL MOTION OF POLYMERS THROUGH A NANOCHANNEL 审中-公开
标题翻译：充电实体通过纳米通道控制聚合物的运动
公开(公告)号：WO2013037240A1
公开(公告)日：2013-03-21
申请号：PCT/CN2012/078585
申请日：2012-07-13
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , HARRER, Stefan , LUAN, Binquan , MARTYNA, Glenn J. , PENG, Hongbo , POLONSKY, Stanislav , ROSSNAGEL, Stephen M. , ROYYURU, Ajay K. , STOLOVITZKY, Gustavo A. , WALKER, George F.
发明人： HARRER, Stefan , LUAN, Binquan , MARTYNA, Glenn J. , PENG, Hongbo , POLONSKY, Stanislav , ROSSNAGEL, Stephen M. , ROYYURU, Ajay K. , STOLOVITZKY, Gustavo A. , WALKER, George F.
IPC分类号： G01N27/30
CPC分类号： B82Y15/00 , C12Q1/6869 , C12Q2565/631
摘要： A technique for controlling the motion of one or more charged entities linked to a polymer through a nanochannel is provided. A first reservoir and a second reservoir are connected by the nanochannel. An array of electrodes is positioned along the nanochannel, where fluid fills the first reservoir, the second reservoir, and the nanochannel. A first electrode is in the first reservoir and a second electrode is in the second reservoir. The first and second electrodes are configured to direct the one or more charged entities linked to the polymer into the nanochannel. An array of electrodes is configured to trap the one or more charged entities in the nanochannel responsive to being controlled for trapping. The array of electrodes is configured to move the one or more charged entities along the nanochannel responsive to being controlled for moving.
摘要翻译：提供了一种用于控制通过纳米通道连接到聚合物的一个或多个带电实体的运动的技术。第一储存器和第二储存器通过纳米通道连接。电极阵列沿纳米通道定位，其中流体填充第一储存器，第二储存器和纳米通道。第一电极在第一储存器中，第二电极位于第二储存器中。第一和第二电极被配置为将连接到聚合物的一个或多个带电实体引导到纳米通道中。电极阵列被配置为捕捉纳米通道中的一个或多个带电实体，以响应于被捕获而被控制。电极阵列被配置为响应于被控制移动而沿着纳米通道移动一个或多个带电实体。

6. 发明申请

WO2012033570A1 NANOSTRUCTURE ELECTRODE FOR PSEUDOCAPACITIVE ENERGY STORAGE 审中-公开
标题翻译：用于防止能量储存的纳米结构电极
公开(公告)号：WO2012033570A1
公开(公告)日：2012-03-15
申请号：PCT/US2011/044643
申请日：2011-07-20
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , HAIGHT, Richard A. , ROSSNAGEL, Stephen M.
发明人： HAIGHT, Richard A. , ROSSNAGEL, Stephen M.
IPC分类号： H01G9/058
CPC分类号： H01G11/26 , H01G11/36 , H01G11/46 , Y02E60/13
摘要： A nanoporous templating substrate, which is an anodically oxidized alumina (AAO) substrate, is employed to form a pseudocapacitor having high stored energy density. A pseudocapacitive material is deposited conformally along the sidewalls of the AAO substrate by atomic layer deposition, chemical vapor deposition), and/or electrochemical deposition employing a nucleation layer. The thickness of the pseudocapacitive material on the walls can be precisely controlled in the deposition process. The AAO is etched to form an array of nanotubes of the PC material that are cylindrical and structurally robust with cavities therein. Because the AAO substrate that acts as scaffolding is removed, only the active PC material is left behind, thereby maximizing the energy per mass. In addition, nanotubes may be de-anchored from a substrate so that free-standing nanotubes having randomized orientations may be deposited on a conductive substrate to form an electrode of a pseudocapacitor
摘要翻译：使用作为阳极氧化的氧化铝（AAO）底物的纳米多孔模板基底来形成具有高储能能量密度的假电容器。通过原子层沉积，化学气相沉积）和/或使用成核层的电化学沉积，沿着AAO衬底的侧壁保形地沉积假电容材料。在沉积过程中可以精确地控制壁上的假电容材料的厚度。 AAO被蚀刻以形成PC材料的纳米管阵列，该纳米管是圆柱形的并且结构上坚固的具有空腔的纳米管。由于去除了作为脚手架的AAO基板，所以只剩下活性PC材料，从而使每质量的能量最大化。此外，可以从衬底去除锚定纳米管，使得具有随机取向的自立式纳米管可以沉积在导电衬底上以形成假电容器的电极

7. 发明申请

WO2011100079A1 POST DEPOSITION METHOD FOR REGROWTH OF CRYSTALLINE PHASE CHANGE MATERIAL 审中-公开
标题翻译：用于晶体相变材料再生的后沉积方法
公开(公告)号：WO2011100079A1
公开(公告)日：2011-08-18
申请号：PCT/US2011/020628
申请日：2011-01-10
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , CHUNG, Lam H. , ROSSNAGEL, Stephen M. , SCHROTT, Alejandro G.
发明人： CHUNG, Lam H. , ROSSNAGEL, Stephen M. , SCHROTT, Alejandro G.
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/143 , H01L45/144 , H01L45/1641 , H01L45/1683
摘要： Techniques for forming a phase change memory cell. An example method includes forming a bottom electrode within a substrate. The method includes forming a phase change layer above the bottom electrode. The method includes forming a capping layer and an insulator layer. The method includes crystallizing the phase change material in the phase change layer so that the phase change layer is void free. The method further comprises heating the phase change material in the phase change layer from the bottom electrode and as a result the phase change layer is crystallized from the bottom to the top. In one embodiment, a rapid thermal anneal (RTA) is applied for crystallizing the phase change material.
摘要翻译：用于形成相变存储单元的技术。一种示例性方法包括在衬底内形成底部电极。该方法包括在底部电极上形成相变层。该方法包括形成覆盖层和绝缘体层。该方法包括使相变层中的相变材料结晶，使得相变层无空隙。该方法还包括从底部电极加热相变层中的相变材料，结果相变层从底部到顶部结晶。在一个实施例中，应用快速热退火（RTA）以使相变材料结晶。

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