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    • 8. 发明申请
    • SELECTIVE ETCHING OF OXIDES FROM SUBSTRATES
    • 从基材中选择性氧化氧化
    • WO2008088300A3
    • 2009-04-23
    • PCT/US2006008154
    • 2005-03-08
    • PRIMAXX INCMUMBAUER PAUL DROMAN PAULGRANT ROBERT W
    • MUMBAUER PAUL DROMAN PAULGRANT ROBERT W
    • C23F1/00B82B1/00
    • H01L21/31116B81C1/00595B81C1/0092B81C1/00928
    • A method and system for release etching a micro-electrical-mechanical-systerns (MEMS) device from a substrate. In one aspect, the invention is a method comprising (a) supporting al least one substrate having a sacrificial oxide and a non-saorificial material in process chamber at a pressure and at a temperature; (b) introducing a gas phase mixture comprising a halide-containing species and an alcohol vapor selected from a group consisting of ethanol, 1-propanol, and an aliphatic alcohol having four carbon groups into the process chamber, the gas phase mixture having a volumetric ratio of the halide-containinig species to the alcohol vapor of approximately 2 or less; and (c) etching the sacrificial oxide with the gas phase mixture. In another aspect, the invention is a system for carrying out the method.
    • 一种用于从衬底释放蚀刻微电子机械系统(MEMS)器件的方法和系统。 一方面,本发明是一种方法,其包括(a)在压力和温度下在处理室中支撑具有牺牲氧化物和非人造材料的至少一个衬底; (b)将含有卤化物的物质和选自乙醇,1-丙醇和具有四个碳原子的脂族醇的醇蒸气的气相混合物引入处理室,气相混合物具有体积 卤化物含有物质与醇蒸气的比例为约2或更小; 和(c)用气相混合物蚀刻牺牲氧化物。 另一方面,本发明是一种执行该方法的系统。