专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2008154290A1 MEMORY REPAIR SYSTEM AND METHOD 审中-公开
标题翻译：记忆修复系统和方法
公开(公告)号：WO2008154290A1
公开(公告)日：2008-12-18
申请号：PCT/US2008/065920
申请日：2008-06-05
申请人： TEXAS INSTRUMENTS INCORPORATED , RAHMAN, Mohammad, Jahidur , GEORGE, Sabuson
发明人： RAHMAN, Mohammad, Jahidur , GEORGE, Sabuson
IPC分类号： G11C29/00 , G11C16/00
CPC分类号： G11C29/02 , G11C17/14 , G11C29/027 , G11C29/76 , G11C29/812 , G11C2029/0401 , G11C2229/726
摘要： A system and method for making efficient use of fuse ROM redundancy to increase yield and security. Some embodiments provide a memory repair system including a non¬ volatile memory component (104) and a controller (106) coupled to the non-volatile memory component. The non-volatile memory component includes a plurality of memory locations. The plurality of memory locations includes a replacement memory location to replace a faulty memory location and a replacement indicia memory location to store replacement memory location indicia. The controller coupled to the non-volatile memory component reads replacement memory location indicia from the replacement indicia memory location, determines an address for the replacement memory location using the indicia, reads the replacement memory location, and transfers a data value contained in the replacement memory location to a second memory component (112) to repair a defective memory location of the second memory component.
摘要翻译：一种用于有效利用熔丝ROM冗余来增加产量和安全性的系统和方法。一些实施例提供了包括非易失性存储器组件（104）和耦合到非易失性存储器组件的控制器（106）的存储器修复系统。非易失性存储器组件包括多个存储器位置。多个存储器位置包括替换存储器位置以替换故障存储器位置和替换标记存储器位置以存储替换存储器位置标记。耦合到非易失性存储器组件的控制器从替换标记存储器位置读取替代存储器位置标记，使用标记确定替换存储器位置的地址，读取替换存储器位置，并且传送包含在替换存储器中的数据值位置到第二存储器组件（112）以修复第二存储器组件的有缺陷的存储器位置。

IPRDB

热门服务

关于我们

友情链接

联系方式