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1. 发明申请

WO2010098943A3 ANTIFUSE 审中-公开
标题翻译：反熔丝
公开(公告)号：WO2010098943A3
公开(公告)日：2010-11-18
申请号：PCT/US2010022835
申请日：2010-02-02
申请人： FREESCALE SEMICONDUCTOR INC , MIN WON GI , PERKINS GEOFFREY W , ZUKOWSKI KYLE D , ZUO JIANG-KAI
发明人： MIN WON GI , PERKINS GEOFFREY W , ZUKOWSKI KYLE D , ZUO JIANG-KAI
IPC分类号： H01L23/62 , H01L27/115
CPC分类号： H01L23/5252 , H01L2924/0002 , H01L2924/12044 , H01L2924/3011 , H01L2924/00
摘要： An antifuse (40, 80, 90') comprises, first (22', 24') and second (26') conductive regions having spaced-apart curved portions (55, 56), with a first dielectric region (44) therebetween, forming in combination with the curved portions (55, 56) a curved breakdown region (47) adapted to switch from a substantially non-conductive initial state to a substantially conductive final state in response to a predetermined programming voltage. A sense voltage less than the programming voltage is used to determine the state of the antifuse as either OFF (high impedance) or ON (low impedance). A shallow trench isolation (STI) region (42) is desirably provided adjacent the breakdown region (47) to inhibit heat loss from the breakdown region (47) during programming. Lower programming voltages and currents are observed compared to antifuses (30) using substantially planar dielectric regions (32). In a further embodiment, a resistive region (922) is inserted in one lead (92, 92') of the antifuses (90, 90') with either planar (37) or curved (47) breakdown regions to improve post-programming sense reliability.
摘要翻译：反熔丝（40,80,90'）包括具有隔开的弯曲部分（55,56）的第一（22'，24'）和第二（26'）导电区域，其间具有第一介电区域（44）与弯曲部分（55,56）结合形成适于响应于预定的编程电压从基本不导电的初始状态切换到基本导电的最终状态的弯曲击穿区域（47）。使用小于编程电压的检测电压来确定反熔丝的状态为OFF（高阻抗）或ON（低阻抗）。希望在击穿区（47）附近提供浅沟槽隔离（STI）区（42）以抑制编程期间来自击穿区（47）的热损失。与使用基本上平面的介电区域（32）的反熔丝（30）相比，观察到较低的编程电压和电流。在另一个实施例中，电阻区域（922）插入具有平面（37）或弯曲（47）击穿区域的反熔丝（90,90'）的一个引线（92,92'）中，以改善编程后感测可靠性。

2. 发明申请

WO2010098943A2 ANTIFUSE 审中-公开
标题翻译：反熔丝
公开(公告)号：WO2010098943A2
公开(公告)日：2010-09-02
申请号：PCT/US2010/022835
申请日：2010-02-02
申请人： FREESCALE SEMICONDUCTOR INC. , MIN, Won Gi , PERKINS, Geoffrey W. , ZUKOWSKI, Kyle D. , ZUO, Jiang-Kai
发明人： MIN, Won Gi , PERKINS, Geoffrey W. , ZUKOWSKI, Kyle D. , ZUO, Jiang-Kai
IPC分类号： H01L23/62 , H01L27/115
CPC分类号： H01L23/5252 , H01L2924/0002 , H01L2924/12044 , H01L2924/3011 , H01L2924/00
摘要： An antifuse (40, 80, 90') comprises, first (22', 24') and second (26') conductive regions having spaced-apart curved portions (55, 56), with a first dielectric region (44) therebetween, forming in combination with the curved portions (55, 56) a curved breakdown region (47) adapted to switch from a substantially non-conductive initial state to a substantially conductive final state in response to a predetermined programming voltage. A sense voltage less than the programming voltage is used to determine the state of the antifuse as either OFF (high impedance) or ON (low impedance). A shallow trench isolation (STI) region (42) is desirably provided adjacent the breakdown region (47) to inhibit heat loss from the breakdown region (47) during programming. Lower programming voltages and currents are observed compared to antifuses (30) using substantially planar dielectric regions (32). In a further embodiment, a resistive region (922) is inserted in one lead (92, 92') of the antifuses (90, 90') with either planar (37) or curved (47) breakdown regions to improve post-programming sense reliability.
摘要翻译：反熔丝（40,80,90'）包括具有间隔开的弯曲部分（55,56）的第一（22'，24'）和第二（26'）导电区域，其间具有第一介电区域（44）与所述弯曲部分（55,56）组合形成弯曲击穿区域（47），所述弯曲击穿区域（47）响应于预定编程电压而适于从基本上不导电的初始状态切换到基本上导通的最终状态。使用小于编程电压的感测电压来确定反熔丝的状态为OFF（高阻抗）或ON（低阻抗）。希望在击穿区域（47）附近设置浅沟槽隔离（STI）区域（42），以在编程期间抑制来自击穿区域（47）的热损失。与使用基本平坦的电介质区域（32）的反熔丝（30）相比，观察到较低的编程电压和电流。在另一个实施例中，电阻区域（922）被插入到具有平面（37）或弯曲（47）击穿区域的反熔丝（90,90'）的一个引线（92,92'）中，以改善后编程感可靠性。

3. 发明申请

WO2008118561A1 METHOD AND DEVICE FOR PROGRAMMING ANTI-FUSES 审中-公开
标题翻译：用于编制抗熔体的方法和装置
公开(公告)号：WO2008118561A1
公开(公告)日：2008-10-02
申请号：PCT/US2008/054240
申请日：2008-02-19
申请人： FREESCALE SEMICONDUCTOR INC. , PERKINS, Geoffrey W.
发明人： PERKINS, Geoffrey W.
IPC分类号： H03K19/177
CPC分类号： H03K19/17704 , G11C17/16 , G11C17/18 , H03K19/17748 , H03K19/17764 , H03K19/17768 , H03K19/1778
摘要： A device includes an anti-fuse (122) including a first electrode that can be selectively coupled to a first voltage reference (121) and a second electrode that can be selectively coupled to a second voltage reference (123). The device further includes a shunt transistor (124) including a first current electrode coupled to the first electrode of the anti-fuse (122), a second current electrode coupled to the second electrode of the anti-fuse (122), and a control electrode. The device additionally includes control logic (126) configured to disable the shunt transistor in response to a first program operation intended for the anti-fuse. The control logic (126) also is configured to enable the shunt transistor in response to a second program operation not intended for the anti-fuse.
摘要翻译：一种装置包括抗熔丝（122），其包括能够选择性地耦合到第一电压参考（121）的第一电极和可选择性地耦合到第二电压参考（123）的第二电极。该装置还包括分流晶体管（124），其包括耦合到反熔丝（122）的第一电极的第一电流电极，耦合到反熔丝（122）的第二电极的第二电流电极，以及控制电极。该装置还包括被配置为响应于用于反熔丝的第一编程操作来禁用分流晶体管的控制逻辑（126）。控制逻辑（126）还被配置为响应于不针对反熔丝的第二编程操作使能分流晶体管。

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