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    • 5. 发明申请
    • ELECTRODE SECURING PLATENS AND ELECTRODE POLISHING ASSEMBLIES INCORPORATING THE SAME
    • 电极固定平板和电极抛光组件并入其中
    • WO2012061362A3
    • 2012-09-07
    • PCT/US2011058745
    • 2011-11-01
    • LAM RES CORPLA CROIX CLIFFAVOYAN ARMENOUTKA DUANEZHOU CATHERINESHIH HONG
    • LA CROIX CLIFFAVOYAN ARMENOUTKA DUANEZHOU CATHERINESHIH HONG
    • H01L21/304
    • B24B37/30B24B41/061
    • In one embodiment, an electrode polishing assembly may include an electrode securing platen, a plurality of electrode locating fasteners, and an electrode. Each of the electrode locating fasteners may include an electrode spacing shoulder, a variance cancelling shoulder extending from the electrode spacing shoulder, a threaded platen clamping portion extending from the variance cancelling shoulder, and a threaded nut that engages the threaded platen clamping portion. The electrode locating fasteners clamp the electrode securing platen between the threaded nut and the electrode spacing shoulder. The variance cancelling shoulder is at least partially within one of a plurality of variance cancelling passages of the electrode securing platen. A minimum position stack-up is equal to a minimum passage size minus a maximum shoulder size. A maximum position stack-up is equal to a maximum passage size minus a minimum shoulder size. The maximum position stack-up is greater than the minimum position stack-up.
    • 在一个实施例中,电极抛光组件可以包括电极固定台板,多个电极定位紧固件和电极。 每个电极定位紧固件可以包括电极间隔肩部,从电极间隔肩部延伸的变化抵消肩部,从变化抵消肩部延伸的螺纹压板夹紧部分以及与螺纹压板夹紧部分接合的螺纹螺母。 电极定位紧固件将电极固定板夹紧在螺母和电极间隔肩之间。 方差消除肩部至少部分在电极固定台板的多个方差消除通道中的一个之内。 最小位置叠加等于最小通道尺寸减去最大肩部尺寸。 最大位置叠加等于最大通道尺寸减去最小肩部尺寸。 最大位置叠加大于最小位置叠加。
    • 8. 发明申请
    • ELECTRODE SECURING PLATENS AND ELECTRODE POLISHING ASSEMBLIES INCORPORATING THE SAME
    • 电极安装板和电极抛光组件
    • WO2012061362A2
    • 2012-05-10
    • PCT/US2011/058745
    • 2011-11-01
    • LAM RESEARCH CORPORATIONLA CROIX, CliffAVOYAN, ArmenOUTKA, DuaneZHOU, CatherineSHIH, Hong
    • LA CROIX, CliffAVOYAN, ArmenOUTKA, DuaneZHOU, CatherineSHIH, Hong
    • H01L21/304
    • B24B37/30B24B41/061
    • In one embodiment, an electrode polishing assembly may include an electrode securing platen, a plurality of electrode locating fasteners, and an electrode. Each of the electrode locating fasteners may include an electrode spacing shoulder, a variance cancelling shoulder extending from the electrode spacing shoulder, a threaded platen clamping portion extending from the variance cancelling shoulder, and a threaded nut that engages the threaded platen clamping portion. The electrode locating fasteners clamp the electrode securing platen between the threaded nut and the electrode spacing shoulder. The variance cancelling shoulder is at least partially within one of a plurality of variance cancelling passages of the electrode securing platen. A minimum position stack-up is equal to a minimum passage size minus a maximum shoulder size. A maximum position stack-up is equal to a maximum passage size minus a minimum shoulder size. The maximum position stack-up is greater than the minimum position stack-up.
    • 在一个实施例中,电极抛光组件可以包括电极固定压板,多个电极定位紧固件和电极。 每个电极定位紧固件可以包括电极间隔肩部,从电极间隔肩部延伸的方差消除肩部,从变形消除肩部延伸的螺纹压板夹持部分和与螺纹压板夹持部分接合的螺纹螺母。 电极定位紧固件将电极固定压板夹在螺母和电极间隔肩之间。 方差消除肩部至少部分地在电极固定台板的多个方差消除通路之一内。 最小位置叠加等于最小通道尺寸减去最大肩部尺寸。 最大位置叠加等于最大通道尺寸减去最小肩部尺寸。 最大位置叠加大于最小位置叠加。
    • 10. 发明申请
    • IMMERSIVE OXIDATION AND ETCHING PROCESS FOR CLEANING SILICON ELECTRODES
    • 用于清洁硅电极的强力氧化和蚀刻工艺
    • WO2010068753A2
    • 2010-06-17
    • PCT/US2009067495
    • 2009-12-10
    • LAM RES CORPZHOU CATHERINEOUTKA DUANEAVOYAN ARMENSHIH HONG
    • ZHOU CATHERINEOUTKA DUANEAVOYAN ARMENSHIH HONG
    • H05H1/34H05H1/42
    • B24B41/06B08B3/08B08B3/12C11D7/08C11D7/261C11D7/265C11D11/0047
    • A process for cleaning a silicon electrode is provided where the silicon electrode is soaked in an agitated aqueous detergent solution and rinsed with water following removal from the aqueous detergent solution. The rinsed silicon electrode is then soaked in an agitated isopropyl alcohol (IPA) solution and rinsed. The silicon electrode is then subjected to an ultrasonic cleaning operation in water following removal from the IPA solution. Contaminants are then removed from the silicon electrode by soaking the silicon electrode in an agitated mixed acid solution comprising hydrofluoric acid, nitric acid, acetic acid, and water. The silicon electrode is subjected to an additional ultrasonic cleaning operation following removal from the mixed acid solution and is subsequently rinsed and dried. In other embodiments of the present disclosure, it is contemplated that the silicon electrode can be soaked in either the agitated aqueous detergent solution, the agitated isopropyl alcohol (IPA) solution, or both. Additional embodiments are contemplated, disclosed, and claimed.
    • 提供一种清洁硅电极的方法,其中硅电极浸泡在搅拌的含水洗涤剂溶液中,并且在从洗涤剂水溶液中除去之后用水漂洗。 然后将冲洗的硅电极浸泡在搅拌的异丙醇(IPA)溶液中并漂洗。 然后在从IPA溶液中除去之后,将硅电极进行超声波清洗操作。 然后通过将硅电极浸入包含氢氟酸,硝酸,乙酸和水的搅拌的混合酸溶液中从硅电极中除去污染物。 在从混合酸溶液中除去之后,对硅电极进行附加的超声波清洗操作,随后漂洗并干燥。 在本公开的其它实施例中,预期硅电极可以浸泡在搅拌的含水洗涤剂溶液,搅拌的异丙醇(IPA)溶液中或两者中。 额外的实施例被设想,公开和要求保护。