专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2010002724A3 PERIPHERALLY ENGAGING ELECTRODE CARRIERS AND ASSEMBLIES INCORPORATING THE SAME 审中-公开
公开(公告)号：WO2010002724A3
公开(公告)日：2010-01-07
申请号：PCT/US2009/048797
申请日：2009-06-26
申请人： LAM RESEARCH CORPORATION , AUGUSTINO, Jason , AVOYAN, Armen , FANG, Yan , OUTKA, Duane , SHIH, Hong , WHITTEN, Stephen
发明人： AUGUSTINO, Jason , AVOYAN, Armen , FANG, Yan , OUTKA, Duane , SHIH, Hong , WHITTEN, Stephen
IPC分类号： H05H1/34
摘要： In accordance with one embodiment of the present disclosure, an assembly is provided comprising a multi-component electrode and a peripherally engaging electrode carrier. The peripherally engaging electrode carrier comprises a carrier frame and a plurality of reciprocating electrode supports. The multi-component electrode is positioned in the electrode accommodating aperture of the carrier frame. The backing plate of the electrode comprises a plurality of mounting recesses formed about its periphery. The reciprocating electrode supports can be reciprocated into and out of the mounting recesses. Additional embodiments of broader and narrower scope are contemplated.

2. 发明申请

WO2010002722A3 BACKSIDE MOUNTED ELECTRODE CARRIERS AND ASSEMBLIES INCORPORATING THE SAME 审中-公开
公开(公告)号：WO2010002722A3
公开(公告)日：2010-01-07
申请号：PCT/US2009/048794
申请日：2009-06-26
申请人： LAM RESEARCH CORPORATION , AUGUSTINO, Jason , AVOYAN, Armen , FANG, Yan , OUTKA, Duane , SHIH, Hong , WHITTEN, Stephen
发明人： AUGUSTINO, Jason , AVOYAN, Armen , FANG, Yan , OUTKA, Duane , SHIH, Hong , WHITTEN, Stephen
IPC分类号： H05H1/38 , H05H1/34 , H05H1/24
摘要： A carrier assembly is provided comprising a backside mounted electrode carrier and electrode mounting hardware. The backside mounted electrode carrier comprises an electrode accommodating aperture, which in turn comprises a sidewall structure that is configured to limit lateral movement of an electrode positioned in the aperture. The electrode accommodating aperture further comprises one or more sidewall projections that support the weight of an electrode positioned in the aperture. The electrode mounting hardware is configured to engage an electrode positioned in the electrode accommodating aperture from the backside of the carrier and urge the electrode against the sidewall projections so as to limit axial movement of the electrode in the electrode accommodating aperture. Additional embodiments of broader and narrower scope are contemplated.

3. 发明申请

WO2008121290A1 CLEANING OF BONDED SILICON ELECTRODES 审中-公开
标题翻译：粘结硅电极的清洁
公开(公告)号：WO2008121290A1
公开(公告)日：2008-10-09
申请号：PCT/US2008/003972
申请日：2008-03-27
申请人： LAM RESEARCH CORPORATION , OUTKA, Duane , AUGUSTINO, Jason , AVOYAN, Armen , WHITTEN, Stephen , SHIH, Hong , FANG, Yan
发明人： OUTKA, Duane , AUGUSTINO, Jason , AVOYAN, Armen , WHITTEN, Stephen , SHIH, Hong , FANG, Yan
IPC分类号： H01L21/306
CPC分类号： B08B3/04 , H01J37/32862
摘要： Methods of cleaning plasma processing chamber components include contacting surfaces of the components with a cleaning solution, while avoiding damage of other surfaces or areas of the components by the cleaning solution. An exemplary plasma processing chamber component to be cleaning is an elastomer bonded electrode assembly having a silicon member with a plasma-exposed silicon surface, a backing member, and an elastomer bonding material between the silicon surface and the backing member.
摘要翻译：清洁等离子体处理室部件的方法包括将部件的表面与清洁溶液接触，同时避免清洁溶液损坏其它表面或部件区域。要清洁的示例性等离子体处理室部件是具有硅构件的弹性体接合电极组件，其具有等离子体暴露的硅表面，背衬构件和在硅表面和背衬构件之间的弹性体接合材料。

4. 发明申请

WO2010002631A3 PROCESSES FOR RECONDITIONING MULTI-COMPONENT ELECTRODES 审中-公开
公开(公告)号：WO2010002631A3
公开(公告)日：2010-01-07
申请号：PCT/US2009/048244
申请日：2009-06-23
申请人： LAM RESEARCH CORPORATION , AVOYAN, Armen , FANG, Yan , OUTKA, Duane , SHIH, Hong , WHITTEN, Stephen
发明人： AVOYAN, Armen , FANG, Yan , OUTKA, Duane , SHIH, Hong , WHITTEN, Stephen
IPC分类号： H05H1/34
摘要： A process for reconditioning a multi-component electrode comprising a silicon electrode bonded to an electrically conductive backing plate is provided. The process comprises: (i) removing metal ions from the multi-component electrode by soaking the multi-component electrode in a substantially alcohol-free DSP solution comprising sulfuric acid, hydrogen peroxide, and water and rinsing the multi-component electrode with de-ionized water; (ii) polishing one or more surfaces of the multi-component electrode following removal of metal ions there from; and (iii) removing contaminants from silicon surfaces of the multi-component electrode by treating the polished multi-component electrode with a mixed acid solution comprising hydrofluoric acid, nitric acid, acetic acid, and water and by rinsing the treated multi-component electrode with de-ionized water. Additional embodiments of broader and narrower scope are contemplated.

5. 发明申请

WO2010068753A3 IMMERSIVE OXIDATION AND ETCHING PROCESS FOR CLEANING SILICON ELECTRODES 审中-公开
公开(公告)号：WO2010068753A3
公开(公告)日：2010-06-17
申请号：PCT/US2009/067495
申请日：2009-12-10
申请人： LAM RESEARCH CORPORATION , ZHOU, Catherine , OUTKA, Duane , AVOYAN, Armen , SHIH, Hong
发明人： ZHOU, Catherine , OUTKA, Duane , AVOYAN, Armen , SHIH, Hong
IPC分类号： H05H1/34 , H05H1/42
摘要： A process for cleaning a silicon electrode is provided where the silicon electrode is soaked in an agitated aqueous detergent solution and rinsed with water following removal from the aqueous detergent solution. The rinsed silicon electrode is then soaked in an agitated isopropyl alcohol (IPA) solution and rinsed. The silicon electrode is then subjected to an ultrasonic cleaning operation in water following removal from the IPA solution. Contaminants are then removed from the silicon electrode by soaking the silicon electrode in an agitated mixed acid solution comprising hydrofluoric acid, nitric acid, acetic acid, and water. The silicon electrode is subjected to an additional ultrasonic cleaning operation following removal from the mixed acid solution and is subsequently rinsed and dried. In other embodiments of the present disclosure, it is contemplated that the silicon electrode can be soaked in either the agitated aqueous detergent solution, the agitated isopropyl alcohol (IPA) solution, or both. Additional embodiments are contemplated, disclosed, and claimed.

6. 发明申请

WO2010068752A3 PLATEN AND ADAPTER ASSEMBLIES FOR FACILITATING SILICON ELECTRODE POLISHING 审中-公开
公开(公告)号：WO2010068752A3
公开(公告)日：2010-06-17
申请号：PCT/US2009/067494
申请日：2009-12-10
申请人： LAM RESEARCH CORPORATION , AVOYAN, Armen , OUTKA, Duane , ZHOU, Catherine , SHIH, Hong
发明人： AVOYAN, Armen , OUTKA, Duane , ZHOU, Catherine , SHIH, Hong
IPC分类号： H01L21/304
摘要： A process is provided for polishing a silicon electrode utilizing a polishing turntable and a dual function electrode platen. The dual function electrode platen is secured to the polishing turntable and comprises a plurality of electrode mounts arranged to project from an electrode engaging face of the dual function electrode platen. The electrode mounts complement respective positions of mount receptacles formed in a platen engaging face of the silicon electrode to be polished. The electrode mounts and the mount receptacles are configured to permit non-destructive engagement and disengagement of the electrode engaging face of the electrode platen and the platen engaging face of the silicon electrode. The dual function electrode platen further comprises platen adapter abutments positioned radially inward of the electrode mounts. The platen adapter abutments are configured to bring a platen adapter into approximate alignment with the rotary polishing axis. The silicon electrode is polished by (i) engaging the electrode engaging face of the electrode platen and the platen engaging face of the silicon electrode via the electrode mounts and mount receptacles, (ii) utilizing the polishing turntable to impart rotary motion to the engaged silicon electrode, and (iii) contacting an exposed face of the silicon electrode with a polishing surface as the silicon electrode rotates about the rotary polishing axis. Additional embodiments are contemplated, disclosed and claimed.

7. 发明申请

WO2012061362A2 ELECTRODE SECURING PLATENS AND ELECTRODE POLISHING ASSEMBLIES INCORPORATING THE SAME 审中-公开
标题翻译：电极安装板和电极抛光组件
公开(公告)号：WO2012061362A2
公开(公告)日：2012-05-10
申请号：PCT/US2011/058745
申请日：2011-11-01
申请人： LAM RESEARCH CORPORATION , LA CROIX, Cliff , AVOYAN, Armen , OUTKA, Duane , ZHOU, Catherine , SHIH, Hong
发明人： LA CROIX, Cliff , AVOYAN, Armen , OUTKA, Duane , ZHOU, Catherine , SHIH, Hong
IPC分类号： H01L21/304
CPC分类号： B24B37/30 , B24B41/061
摘要： In one embodiment, an electrode polishing assembly may include an electrode securing platen, a plurality of electrode locating fasteners, and an electrode. Each of the electrode locating fasteners may include an electrode spacing shoulder, a variance cancelling shoulder extending from the electrode spacing shoulder, a threaded platen clamping portion extending from the variance cancelling shoulder, and a threaded nut that engages the threaded platen clamping portion. The electrode locating fasteners clamp the electrode securing platen between the threaded nut and the electrode spacing shoulder. The variance cancelling shoulder is at least partially within one of a plurality of variance cancelling passages of the electrode securing platen. A minimum position stack-up is equal to a minimum passage size minus a maximum shoulder size. A maximum position stack-up is equal to a maximum passage size minus a minimum shoulder size. The maximum position stack-up is greater than the minimum position stack-up.
摘要翻译：在一个实施例中，电极抛光组件可以包括电极固定压板，多个电极定位紧固件和电极。每个电极定位紧固件可以包括电极间隔肩部，从电极间隔肩部延伸的方差消除肩部，从变形消除肩部延伸的螺纹压板夹持部分和与螺纹压板夹持部分接合的螺纹螺母。电极定位紧固件将电极固定压板夹在螺母和电极间隔肩之间。方差消除肩部至少部分地在电极固定台板的多个方差消除通路之一内。最小位置叠加等于最小通道尺寸减去最大肩部尺寸。最大位置叠加等于最大通道尺寸减去最小肩部尺寸。最大位置叠加大于最小位置叠加。

8. 发明申请

WO2008048443A1 METHODS AND APPARATUS FOR WET CLEANING ELECTRODE ASSEMBLIES FOR PLASMA PROCESSING APPARATUSES 审中-公开
标题翻译：用于等离子体处理装置的清洁电极组件的方法和装置
公开(公告)号：WO2008048443A1
公开(公告)日：2008-04-24
申请号：PCT/US2007/021628
申请日：2007-10-10
申请人： LAM RESEARCH CORPORATION , SHIH, Hong , YIN, Yaobo , AUGUSTINO, Jason , ZHOU, Catherine , AVOYAN, Armen
发明人： SHIH, Hong , YIN, Yaobo , AUGUSTINO, Jason , ZHOU, Catherine , AVOYAN, Armen
IPC分类号： H01L21/306 , H01L21/3065
CPC分类号： C23C16/4407 , B08B1/00 , B08B3/02 , B08B3/12
摘要： Methods of cleaning backing plates of electrode assemblies, or electrode assemblies including a backing plate and an electrode plate are provided. The methods can be used to clean backing plates and electrode plates made of various materials, such as silicon electrode plates and graphite and aluminum backing plates. The backing plates and electrode assemblies can be new, used or refurbished. A flushing fixture that can be used in the cleaning methods is also provided.
摘要翻译：提供了清洁电极组件的背板或包括背板和电极板的电极组件的方法。该方法可用于清洁由各种材料制成的背板和电极板，例如硅电极板和石墨和铝背板。背板和电极组件可以是新的，使用的或翻新的。还提供了可用于清洁方法的冲洗夹具。

9. 发明申请

WO2013012693A1 DUAL PHASE CLEANING CHAMBERS AND ASSEMBLIES COMPRISING THE SAME 审中-公开
标题翻译：双相清洗器和包括该相机的组件
公开(公告)号：WO2013012693A1
公开(公告)日：2013-01-24
申请号：PCT/US2012/046579
申请日：2012-07-13
申请人： LAM RESEARCH CORPORATION , AVOYAN, Armen , LA CROIX, Cliff , SHIH, Hong
发明人： AVOYAN, Armen , LA CROIX, Cliff , SHIH, Hong
IPC分类号： H05H1/34 , H01L21/3065 , C23C16/505
CPC分类号： H01J37/32862 , B08B3/00 , B08B3/02 , H01J21/00 , H01J37/32532 , H01L21/00
摘要： In one embodiment, a dual phase cleaning chamber may include a turbulent mixing chamber, a fluid diffuser, an isostatic pressure chamber and a rupture mitigating nozzle. The turbulent mixing chamber may be in fluid communication with a first fluid inlet and a second fluid inlet. The fluid diffuser may be in fluid communication with the turbulent mixing chamber. The rupture mitigating nozzle may include a first fluid collecting offset, a second fluid collecting offset, and a displacement damping projection. The displacement damping projection may be disposed between the first and second fluid collecting offset and may be offset away from each of the first fluid collecting offset and the second fluid collecting offset, and towards the fluid diffuser. A pressurized cleaning fluid introduced from the first fluid inlet, the second fluid inlet, or both flows through the outlet passage of the first and second fluid collecting offset.
摘要翻译：在一个实施例中，双相清洗室可以包括湍流混合室，流体扩散器，等静压压力室和破裂缓冲喷嘴。湍流混合室可以与第一流体入口和第二流体入口流体连通。流体扩散器可以与湍流混合室流体连通。破裂缓冲喷嘴可以包括第一流体收集偏移，第二流体收集偏移和位移阻尼突起。位移阻尼突起可以设置在第一和第二流体收集偏移之间，并且可以偏离第一流体收集偏移和第二流体收集偏移中的每一个并且朝向流体扩散器偏移。从第一流体入口，第二流体入口或二者引入的加压清洁流体流过第一和第二流体收集偏移的出口通道。

10. 发明申请

WO2011084127A2 METHODOLOGY FOR CLEANING OF SURFACE METAL CONTAMINATION FROM AN UPPER ELECTRODE USED IN A PLASMA CHAMBER 审中-公开
标题翻译：从等离子体室中使用的上电极清洗表面金属污染的方法
公开(公告)号：WO2011084127A2
公开(公告)日：2011-07-14
申请号：PCT/US2010/003092
申请日：2010-12-06
申请人： LAM RESEARCH CORPORATION , SHIH, Hong , AVOYAN, Armen , DESHMUKH, Shashank, C. , CARMAN, David
发明人： SHIH, Hong , AVOYAN, Armen , DESHMUKH, Shashank, C. , CARMAN, David
IPC分类号： H01L21/205 , H01L21/3065
CPC分类号： B08B3/08
摘要： A method for cleaning metallic contaminants from an upper electrode used in a plasma chamber. The method comprises a step of soaking the upper electrode in a cleaning solution of concentrated ammonium hydroxide, hydrogen peroxide and water. The cleaning solution is free of hydrofluoric acid and hydrochloric acid. The method further comprises an optional step of soaking the upper electrode in dilute nitric acid and rinsing the cleaned upper electrode.
摘要翻译：用于从等离子体室中使用的上电极清洗金属污染物的方法。该方法包括将上电极浸入浓氢氧化铵，过氧化氢和水的清洗溶液中的步骤。清洗液不含氢氟酸和盐酸。该方法还包括将上电极浸入稀硝酸中并漂洗清洁的上电极的任选步骤。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式