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1. 发明申请

WO2005088740A1 GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：基于氮化镓的化合物半导体发光器件
公开(公告)号：WO2005088740A1
公开(公告)日：2005-09-22
申请号：PCT/JP2005/005044
申请日：2005-03-15
申请人： SHOWA DENKO K.K. , WATANABE, Munetaka , MURAKI, Noritaka , OHNO, Yasushi
发明人： WATANABE, Munetaka , MURAKI, Noritaka , OHNO, Yasushi
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L33/0095
摘要： An object of the present invention is to provide a gallium nitride compound semiconductor light-emitting device having excellent heat resistance, which device is resistive to an increase in the forward operation voltage (VF) caused by mild heating performed after formation of the light-emitting device (e.g., heating to about 300°C during mounting of the light-emitting device). The inventive gallium nitride compound semiconductor light-emitting device comprises a substrate; an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, the layers being successively provided atop the substrate and being formed of a gallium nitride compound semiconductor; a negative electrode provided on the n-type semiconductor layer at a certain portion thereof, the portion being exposed by partial, depthwise removal of the light-emitting layer and the p-type semiconductor layer altogether through reactive ion etching; and a positive electrode provided on the remaining p-type semiconductor layer, wherein the gallium nitride compound semiconductor light-emitting device is produced through reactive ion etching by use of silicon tetrachloride as the sole etching gas.
摘要翻译：本发明的目的是提供一种耐热性优异的氮化镓系化合物半导体发光元件，其特征在于，能够抑制由形成发光后的温和加热引起的正向工作电压（VF）的上升装置（例如，在安装发光装置期间加热到约300℃）。本发明的氮化镓化合物半导体发光器件包括衬底; n型半导体层，发光层，p型半导体层，这些层被连续地设置在衬底上并由氮化镓化合物半导体形成; 设置在n型半导体层的某一部分的负极，该部分通过反应离子蚀刻部分地深度地去除发光层和p型半导体层而被曝光; 以及设置在剩余p型半导体层上的正极，其中通过使用四氯化硅作为唯一蚀刻气体通过反应离子蚀刻制造氮化镓系化合物半导体发光器件。

2. 发明申请

WO2005074046A1 GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：基于氮化镓的化合物半导体发光器件
公开(公告)号：WO2005074046A1
公开(公告)日：2005-08-11
申请号：PCT/JP2005/001645
申请日：2005-01-28
申请人： SHOWA DENKO K.K , MURAKI, Noritaka , WATANABE, Munetaka , MIKI, Hisayuki , OHNO, Yasushi
发明人： MURAKI, Noritaka , WATANABE, Munetaka , MIKI, Hisayuki , OHNO, Yasushi
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/32 , H01L33/42
摘要： A gallium nitride compound semiconductor light-emitting device includes a crystalline substrate (10), a light-emitting layer (15) of a quantum well structure which is formed of a gallium nitride compound semiconductor barrier layer and a gallium nitride compound semiconductor well layer, which light-emitting layer is provided on a second side of the crystalline substrate, a contact layer (17) formed of a Group III-V compound semiconductor for providing an Ohmic electrode for supplying device operation current to the light-emitting layer, and an Ohmic electrode (18) which is provided on the contact layer and has an aperture through which a portion of the contact layer is exposed. The Ohmic electrode exhibits light permeability with respect to light emitted from the light-emitting layer. The well layer contains a thick portion having a large thickness and a thin portion having a small thickness.
摘要翻译：氮化镓系化合物半导体发光元件包括晶体基板（10），由氮化镓系化合物半导体势垒层和氮化镓系化合物半导体阱层形成的量子阱结构的发光层（15）所述发光层设置在所述结晶基板的第二面上，由用于提供用于向所述发光层提供器件工作电流的欧姆电极的III-V族化合物半导体形成的接触层（17）欧姆电极（18），其设置在接触层上并且具有孔，接触层的一部分穿过该孔露出。欧姆电极相对于从发光层发射的光呈现透光性。阱层包含厚度较大的厚壁部分和厚度较小的薄壁部分。

3. 发明申请

WO2005117150A1 GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：基于氮化镓的化合物半导体发光器件
公开(公告)号：WO2005117150A1
公开(公告)日：2005-12-08
申请号：PCT/JP2005/009587
申请日：2005-05-19
申请人： SHOWA DENKO K.K. , KAMEI, Koji , WATANABE, Munetaka , MURAKI, Noritaka , OHNO, Yasushi
发明人： KAMEI, Koji , WATANABE, Munetaka , MURAKI, Noritaka , OHNO, Yasushi
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/32
摘要： This gallium nitride-base compound semiconductor light emitting device includes an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer that are composed of gallium nitride-based compound semiconductors and are deposited in that order on a substrate, and further includes a negative electrode and a positive electrode that are in contact with the n-type semiconductor layer and the p-type semiconductor layer, respectively, wherein the positive electrode has a translucent electrode composed of a three-layer structure including a contact metal layer that contacts at least the p-type semiconductor layer, a current diffusion layer provided on the contact metal layer and having conductivity greater than that of the contact metal layer, and a bonding pad layer provided on the current diffusion layer, and a mixed positive electrode-metal layer including a metal that forms the contact metal layer is present in a positive electrode side surface of the p-type semiconductor layer.
摘要翻译：该氮化镓系化合物半导体发光元件包括由氮化镓系化合物半导体构成的n型半导体层，发光层和p型半导体层，并依次沉积在基板上，并且还包括分别与n型半导体层和p型半导体层接触的负极和正极，其中所述正极具有由包括接触金属的三层结构构成的透光性电极至少与p型半导体层接触的层，设置在接触金属层上并具有大于接触金属层的导电性的电流扩散层，以及设置在电流扩散层上的接合焊盘层，以及混合正极包含形成接触金属层的金属的电极 - 金属层存在于p型半导体的正极侧表面上导管层。

4. 发明申请

WO2005106983A1 TRANSPARENT POSITIVE ELECTRODE 审中-公开
标题翻译：透明阳极电极
公开(公告)号：WO2005106983A1
公开(公告)日：2005-11-10
申请号：PCT/JP2005/008561
申请日：2005-04-28
申请人： SHOWA DENKO K.K. , WATANABE, Munetaka , MURAKI, Noritaka , KAMEI, Koji , OHNO, Yasushi
发明人： WATANABE, Munetaka , MURAKI, Noritaka , KAMEI, Koji , OHNO, Yasushi
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/42
摘要： An object of the present invention is to provide a positive electrode having high transparency, low contact resistance and excellent current diffusibility and not requiring electron beam irradiation, high-temperature annealing or heat treatment, for alloying, in an oxygen atmosphere. The inventive transparent positive electrode for gallium nitride-based compound semiconductor light-emitting devices comprises a contact metal layer in contact with a p-type semiconductor layer, a current diffusing layer on the contact metal layer, the current diffusing layer having an electrical conductivity larger than that of the contact metal layer.
摘要翻译：本发明的目的是提供一种在氧气氛中具有高透明度，低接触电阻和优异的电流扩散性，并且不需要电子束照射，高温退火或热处理用于合金化的正极。本发明的氮化镓系化合物半导体发光元件用透明正极包括与p型半导体层接触的接触金属层，接触金属层上的电流扩散层，电导率较大的电流扩散层比接触金属层的厚度大。

5. 发明申请

WO2009113736A1 MMP-2 AND/OR MMP-9 INHIBITOR 审中-公开
标题翻译： MMP-2和/或MMP-9抑制剂
公开(公告)号：WO2009113736A1
公开(公告)日：2009-09-17
申请号：PCT/JP2009/055545
申请日：2009-03-13
申请人： OTSUKA PHARMACEUTICAL CO., LTD. , MINATOGUCHI, Shinya , OHNO, Yasushi , YABUUCHI, Youichi , KOTOSAI, Kounori , NAGAMOTO, Hisashi
发明人： MINATOGUCHI, Shinya , OHNO, Yasushi , YABUUCHI, Youichi , KOTOSAI, Kounori , NAGAMOTO, Hisashi
IPC分类号： A61K31/4439 , A61P11/00
CPC分类号： A61K31/4439 , Y02A50/411
摘要： The present invention provides a highly safe pharmaceutical preparation effective for diseases caused by MMP-2 and/or MMP-9. The pharmaceutical preparation contains, as an active ingredient, at least one member selected from the group consisting of thiazole derivatives represented by Formula (1): wherein R1 represents a phenyl group that may have 1 to 3 lower alkoxy groups as substituents on the phenyl ring, and R2 represents a pyridyl group that may have 1 to 3 carboxyl groups as substituents on the pyridine ring, and salts thereof. Such thiazole derivatives have MMP-2 and/or MMP-9 inhibitory activity.
摘要翻译：本发明提供了对由MMP-2和/或MMP-9引起的疾病有效的高度安全的药物制剂。药物制剂含有选自由式（1）表示的噻唑衍生物中的至少一种作为活性成分：其中R 1表示可以具有1-3个低级烷氧基作为苯环上的取代基的苯基，R 2表示可以在吡啶环上具有1〜3个羧基作为取代基的吡啶基及其盐。这样的噻唑衍生物具有MMP-2和/或MMP-9抑制活性。

6. 发明申请

WO2005031161A2 FLUID PUMP, PARTICULARLY HIGH-PRESSURE FUEL PUMP 审中-公开
标题翻译：流体泵，尤其是燃油高压泵
公开(公告)号：WO2005031161A2
公开(公告)日：2005-04-07
申请号：PCT/EP2004052346
申请日：2004-09-29
申请人： BOSCH GMBH ROBERT , ROPERTZ PETER , LANG KLAUS , OHNO YASUSHI
发明人： ROPERTZ PETER , LANG KLAUS , OHNO YASUSHI
IPC分类号： F02M37/00 , F02M55/04 , F02M59/36 , F02M63/02 , F04B11/00 , F16L55/053 , F04B
CPC分类号： F02M37/0041 , F02M37/0047 , F02M55/04 , F02M59/366 , F02M63/0225 , F02M63/0245 , F04B11/0016
摘要： Disclosed is a fluid pump (20), especially a high-pressure fuel pump, comprising a housing (50) and at least one low-pressure connection (18) on the intake side. An intake valve (40) and a conveying space (32) which is delimited by a conveying element (30) are also provided. The inventive fluid pump (20) further comprises a pressure damper (48) which dampens pressure variations on the intake side while encompassing at least one compressible volume (76) that is located directly in the flow path (46) between the low-pressure connection (18) and the intake valve (40).
摘要翻译：一种流体泵（20），特别是高压燃料泵，其包括壳体（50）和至少一个入口侧低压力连接（18）。此外，进气门（40）和输送室（32）的存在，这是由一个输送元件（30）定界。它建议，所述流体泵（20）包括压力阻尼器（48），该阻尼入口侧压力波动和至少一个可压缩体积（76），这是直接在低压端口（18）和入口阀之间的流动路径（46）（40），其设置是。

7. 发明申请

WO2005031161A3 FLUIDPUMPE, INSBESONDERE KRAFTSTOFFHOCHDRUCKPUMPE, MIT DRUCKDÄMPFER 审中-公开
公开(公告)号：WO2005031161A3
公开(公告)日：2005-04-07
申请号：PCT/EP2004/052346
申请日：2004-09-29
申请人： ROBERT BOSCH GMBH , ROPERTZ, Peter , LANG, Klaus , OHNO, Yasushi
发明人： ROPERTZ, Peter , LANG, Klaus , OHNO, Yasushi
IPC分类号： F02M37/00 , F04B11/00 , F16L55/053
摘要： Eine Fluidpumpe (20), insbesondere eine Kraftstoff-Hochdruckpumpe, umfasst ein Gehäuse (50) und mindestens einen einlassseitigen Niederdruckanschluss (18). Ferner ist ein Einlassventil (40) und ein Förderraum (32) vorhanden, der von einem Förderelement (30) begrenzt wird. Es wird vorgeschlagen, dass die Fluidpumpe (20) einen Druckdämpfer (48) umfasst, der einlassseitige Druckschwankungen dämpft und der mindestens ein kompressibles Volumen (76) umfasst, welches unmittelbar im Strömungsweg (46) zwischen Niederdruckanschluss (18) und Einlassventil (40) angeordnet ist.

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