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1. 发明申请

WO2005074046A1 GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：基于氮化镓的化合物半导体发光器件
公开(公告)号：WO2005074046A1
公开(公告)日：2005-08-11
申请号：PCT/JP2005/001645
申请日：2005-01-28
申请人： SHOWA DENKO K.K , MURAKI, Noritaka , WATANABE, Munetaka , MIKI, Hisayuki , OHNO, Yasushi
发明人： MURAKI, Noritaka , WATANABE, Munetaka , MIKI, Hisayuki , OHNO, Yasushi
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/32 , H01L33/42
摘要： A gallium nitride compound semiconductor light-emitting device includes a crystalline substrate (10), a light-emitting layer (15) of a quantum well structure which is formed of a gallium nitride compound semiconductor barrier layer and a gallium nitride compound semiconductor well layer, which light-emitting layer is provided on a second side of the crystalline substrate, a contact layer (17) formed of a Group III-V compound semiconductor for providing an Ohmic electrode for supplying device operation current to the light-emitting layer, and an Ohmic electrode (18) which is provided on the contact layer and has an aperture through which a portion of the contact layer is exposed. The Ohmic electrode exhibits light permeability with respect to light emitted from the light-emitting layer. The well layer contains a thick portion having a large thickness and a thin portion having a small thickness.
摘要翻译：氮化镓系化合物半导体发光元件包括晶体基板（10），由氮化镓系化合物半导体势垒层和氮化镓系化合物半导体阱层形成的量子阱结构的发光层（15）所述发光层设置在所述结晶基板的第二面上，由用于提供用于向所述发光层提供器件工作电流的欧姆电极的III-V族化合物半导体形成的接触层（17）欧姆电极（18），其设置在接触层上并且具有孔，接触层的一部分穿过该孔露出。欧姆电极相对于从发光层发射的光呈现透光性。阱层包含厚度较大的厚壁部分和厚度较小的薄壁部分。

2. 发明申请

WO2006013867A1 TRANSPARENT ELECTRODE FOR SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：透明电极用于半导体发光器件
公开(公告)号：WO2006013867A1
公开(公告)日：2006-02-09
申请号：PCT/JP2005/014137
申请日：2005-07-27
申请人： SHOWA DENKO K.K. , EITOH, Nobuo , MURAKI, Noritaka , MIKI, Hisayuki , WATANABE, Munetaka
发明人： EITOH, Nobuo , MURAKI, Noritaka , MIKI, Hisayuki , WATANABE, Munetaka
IPC分类号： H01L33/00 , H01L21/28
CPC分类号： H01L33/42 , H01L33/32
摘要： A transparent electrode for a gallium nitride-based compound semiconductor light-emitting device includes a p-type semiconductor layer (5), a contact metal layer (1) formed by ohmic contact on the p-type semiconductor layer, an current diffusion layer (12) formed on the contact metal layer and having a lower magnitude of resistivity on the plane of the transparent electrode than the contact metal, and a bonding pad (13) formed on the current diffusion layer. The transparent electrode is at an advantage in widening the surface of light emission in the p-type semiconductor layer, decreasing the operation voltage in the forward direction, and enabling the bonding pad to provide excellent adhesive strength.
摘要翻译：用于氮化镓基化合物半导体发光器件的透明电极包括p型半导体层（5），在p型半导体层上通过欧姆接触形成的接触金属层（1），电流扩散层 12），形成在所述接触金属层上，并且在所述透明电极的平面上的电阻率比接触金属低，并且形成在所述电流扩散层上的接合焊盘（13）。透明电极在扩大p型半导体层的发光表面方面具有优点，降低了正向的工作电压，能够提供优异的粘合强度。

3. 发明申请

WO2006011672A1 POSITIVE ELECTRODE FOR SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：用于半导体发光器件的正极
公开(公告)号：WO2006011672A1
公开(公告)日：2006-02-02
申请号：PCT/JP2005/014265
申请日：2005-07-28
申请人： SHOWA DENKO K.K. , MIKI, Hisayuki , MURAKI, Noritaka , WATANABE, Munetaka
发明人： MIKI, Hisayuki , MURAKI, Noritaka , WATANABE, Munetaka
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32 , H01L33/42 , H01L2924/01012 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079
摘要： An object of the present invention is to provide a transparent positive electrode for use in a face-up-type chip which can emit intense light even using a low drive voltage. The inventive positive electrode for a semiconductor light-emitting device comprises a transparent electrode formed on a semiconductor layer and a bonding pad electrode formed on the transparent electrode, wherein the bonding pad electrode has a reflecting layer that is in contact with at least the transparent electrode.
摘要翻译：本发明的目的是提供一种用于面朝上型芯片的透明正电极，即使使用低驱动电压也能发出强光。本发明的半导体发光装置用正极包括形成在半导体层上的透明电极和形成在透明电极上的焊盘电极，其中，焊盘电极具有与至少透明电极接触的反射层。

4. 发明申请

WO2005088740A1 GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：基于氮化镓的化合物半导体发光器件
公开(公告)号：WO2005088740A1
公开(公告)日：2005-09-22
申请号：PCT/JP2005/005044
申请日：2005-03-15
申请人： SHOWA DENKO K.K. , WATANABE, Munetaka , MURAKI, Noritaka , OHNO, Yasushi
发明人： WATANABE, Munetaka , MURAKI, Noritaka , OHNO, Yasushi
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L33/0095
摘要： An object of the present invention is to provide a gallium nitride compound semiconductor light-emitting device having excellent heat resistance, which device is resistive to an increase in the forward operation voltage (VF) caused by mild heating performed after formation of the light-emitting device (e.g., heating to about 300°C during mounting of the light-emitting device). The inventive gallium nitride compound semiconductor light-emitting device comprises a substrate; an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, the layers being successively provided atop the substrate and being formed of a gallium nitride compound semiconductor; a negative electrode provided on the n-type semiconductor layer at a certain portion thereof, the portion being exposed by partial, depthwise removal of the light-emitting layer and the p-type semiconductor layer altogether through reactive ion etching; and a positive electrode provided on the remaining p-type semiconductor layer, wherein the gallium nitride compound semiconductor light-emitting device is produced through reactive ion etching by use of silicon tetrachloride as the sole etching gas.
摘要翻译：本发明的目的是提供一种耐热性优异的氮化镓系化合物半导体发光元件，其特征在于，能够抑制由形成发光后的温和加热引起的正向工作电压（VF）的上升装置（例如，在安装发光装置期间加热到约300℃）。本发明的氮化镓化合物半导体发光器件包括衬底; n型半导体层，发光层，p型半导体层，这些层被连续地设置在衬底上并由氮化镓化合物半导体形成; 设置在n型半导体层的某一部分的负极，该部分通过反应离子蚀刻部分地深度地去除发光层和p型半导体层而被曝光; 以及设置在剩余p型半导体层上的正极，其中通过使用四氯化硅作为唯一蚀刻气体通过反应离子蚀刻制造氮化镓系化合物半导体发光器件。

5. 发明申请

WO2005117150A1 GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：基于氮化镓的化合物半导体发光器件
公开(公告)号：WO2005117150A1
公开(公告)日：2005-12-08
申请号：PCT/JP2005/009587
申请日：2005-05-19
申请人： SHOWA DENKO K.K. , KAMEI, Koji , WATANABE, Munetaka , MURAKI, Noritaka , OHNO, Yasushi
发明人： KAMEI, Koji , WATANABE, Munetaka , MURAKI, Noritaka , OHNO, Yasushi
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/32
摘要： This gallium nitride-base compound semiconductor light emitting device includes an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer that are composed of gallium nitride-based compound semiconductors and are deposited in that order on a substrate, and further includes a negative electrode and a positive electrode that are in contact with the n-type semiconductor layer and the p-type semiconductor layer, respectively, wherein the positive electrode has a translucent electrode composed of a three-layer structure including a contact metal layer that contacts at least the p-type semiconductor layer, a current diffusion layer provided on the contact metal layer and having conductivity greater than that of the contact metal layer, and a bonding pad layer provided on the current diffusion layer, and a mixed positive electrode-metal layer including a metal that forms the contact metal layer is present in a positive electrode side surface of the p-type semiconductor layer.
摘要翻译：该氮化镓系化合物半导体发光元件包括由氮化镓系化合物半导体构成的n型半导体层，发光层和p型半导体层，并依次沉积在基板上，并且还包括分别与n型半导体层和p型半导体层接触的负极和正极，其中所述正极具有由包括接触金属的三层结构构成的透光性电极至少与p型半导体层接触的层，设置在接触金属层上并具有大于接触金属层的导电性的电流扩散层，以及设置在电流扩散层上的接合焊盘层，以及混合正极包含形成接触金属层的金属的电极 - 金属层存在于p型半导体的正极侧表面上导管层。

6. 发明申请

WO2005106983A1 TRANSPARENT POSITIVE ELECTRODE 审中-公开
标题翻译：透明阳极电极
公开(公告)号：WO2005106983A1
公开(公告)日：2005-11-10
申请号：PCT/JP2005/008561
申请日：2005-04-28
申请人： SHOWA DENKO K.K. , WATANABE, Munetaka , MURAKI, Noritaka , KAMEI, Koji , OHNO, Yasushi
发明人： WATANABE, Munetaka , MURAKI, Noritaka , KAMEI, Koji , OHNO, Yasushi
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/42
摘要： An object of the present invention is to provide a positive electrode having high transparency, low contact resistance and excellent current diffusibility and not requiring electron beam irradiation, high-temperature annealing or heat treatment, for alloying, in an oxygen atmosphere. The inventive transparent positive electrode for gallium nitride-based compound semiconductor light-emitting devices comprises a contact metal layer in contact with a p-type semiconductor layer, a current diffusing layer on the contact metal layer, the current diffusing layer having an electrical conductivity larger than that of the contact metal layer.
摘要翻译：本发明的目的是提供一种在氧气氛中具有高透明度，低接触电阻和优异的电流扩散性，并且不需要电子束照射，高温退火或热处理用于合金化的正极。本发明的氮化镓系化合物半导体发光元件用透明正极包括与p型半导体层接触的接触金属层，接触金属层上的电流扩散层，电导率较大的电流扩散层比接触金属层的厚度大。

7. 发明申请

WO2005122288A1 TRNSPARENT POSITIVE ELECTRODE FOR GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND LIGHT-EMITTING DEVICE 审中-公开
标题翻译：氮化钛基复合半导体发光器件和发光器件的正电极
公开(公告)号：WO2005122288A1
公开(公告)日：2005-12-22
申请号：PCT/JP2005/010745
申请日：2005-06-07
申请人： SHOWA DENKO K.K. , WATANABE, Munetaka , MURAKI, Noritaka , OHONO, Yasushi
发明人： WATANABE, Munetaka , MURAKI, Noritaka , OHONO, Yasushi
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/32
摘要： An object of the present invention is to provide a positive electrode having high transparency, low contact resistance and excellent current diffusibility and not requiring electron beam irradiation, high-temperature annealing or heat treatment, for alloying, in an oxygen atmosphere. The inventive transparent positive electrode for a gallium nitride-based compound semiconductor light-emitting device comprises a contact metal layer that contacts a p-type semiconductor layer, a bonding pad, and a current diffusing layer provided on a portion of said contact metal layer, and having a conductivity that is equal to or greater than that of the contact metal layer.
摘要翻译：本发明的目的是提供一种在氧气氛中具有高透明度，低接触电阻和优异的电流扩散性，并且不需要电子束照射，高温退火或热处理用于合金化的正极。本发明的氮化镓系化合物半导体发光元件用透明正极包括接触p型半导体层的接触金属层，接合焊盘和设置在所述接触金属层的一部分上的电流扩散层，并且具有等于或大于接触金属层的导电率的导电率。

8. 发明申请

WO2005036656A1 GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, POSITIVE ELECTRODE FOR THE DEVICE, LIGHT-EMITTING DIODE AND LAMP USING THE DEVICE 审中-公开
标题翻译：基于氮化镓的化合物半导体发光器件，用于器件的正极，使用器件的发光二极管和灯
公开(公告)号：WO2005036656A1
公开(公告)日：2005-04-21
申请号：PCT/JP2004/015447
申请日：2004-10-13
申请人： SHOWA DENKO K.K. , WATANABE, Munetaka
发明人： WATANABE, Munetaka
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32
摘要： An object of the present invention is to provide a flip-chip-type gallium nitride compound semiconductor light-emitting device exhibiting excellent ohmic characteristics, excellent bonding characteristics, and high emission output. The inventive flip-chip-type gallium nitride compound semiconductor light-emitting device comprises a positive electrode which has a three-layer structure comprising an ohmic electrode layer composed of rhodium which is in contact with the p-type semiconductor layer, an adhesion layer composed of titanium which is provided on the ohmic electrode layer and has a thickness of 10 A or more, and a bonding pad layer provided on the adhesion layer and being composed of a metal selected from the group consisting of gold, aluminum, nickel, and copper, or composed of an alloy containing at least one of these metals.
摘要翻译：本发明的目的是提供一种显示出优异的欧姆特性，优异的接合特性和高发射输出的倒装芯片型氮化镓化合物半导体发光器件。本发明的倒装芯片型氮化镓系化合物半导体发光元件具有正极，该正极具有由与由p型半导体层接触的铑组成的欧姆电极层的三层结构，设置在欧姆电极层上并具有10μm以上的厚度的钛，以及设置在粘合层上并由金，铝，镍和铜组成的组中的金属构成的接合焊盘层，或由含有这些金属中的至少一种的合金构成。

9. 发明申请

WO2005036657A1 GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, POSITIVE ELECTRODE FOR THE DEVICE, LIGHT-EMITTING DIODE AND LAMP USING THE DEVICE 审中-公开
标题翻译：基于氮化镓的化合物半导体发光器件，用于器件的正极，使用器件的发光二极管和灯
公开(公告)号：WO2005036657A1
公开(公告)日：2005-04-21
申请号：PCT/JP2004/015449
申请日：2004-10-13
申请人： SHOWA DENKO K.K. , WATANABE, Munetaka
发明人： WATANABE, Munetaka
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： An object of the present invention is to provide a flip-chip-type gallium nitride compound semiconductor light-emitting device exhibiting excellent ohmic characteristics, excellent bonding characteristics, and high emission output. The inventive flip-chip-type gallium nitride compound semiconductor light-emitting device comprises a substrate, an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a negative electrode provided on the n-type semiconductor layer, and a positive electrode provided on the p-type semiconductor layer, the layers being successively provided atop the substrate in this order and being composed of a gallium nitride compound semiconductor, wherein the positive electrode has a three-layer structure comprising an ohmic electrode layer which is in contact with the p-type semiconductor layer, an adhesion layer which is provided on the ohmic electrode layer, and a bonding pad layer provided on the adhesion layer, each melting point of these layers being lowered in this order.
摘要翻译：本发明的目的是提供一种显示出优异的欧姆特性，优异的接合特性和高发射输出的倒装芯片型氮化镓化合物半导体发光器件。本发明的倒装芯片型氮化镓系化合物半导体发光元件包括基板，n型半导体层，发光层，p型半导体层，设置在n型半导体层上的负极以及设置在p型半导体层上的正极，这些层依次依次设置在衬底上并且由氮化镓化合物半导体构成，其中正极具有包括欧姆电极层的三层结构其与p型半导体层接触，设置在欧姆电极层上的粘合层和设置在粘合层上的接合焊盘层，这些层的每个熔点依次降低。

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