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1. 发明申请

WO2005071828A1 DEMODULATR, CHIP AND METHOD FOR DIGITALLY DEMODULATING AN FSK SIGNAL 审中-公开
标题翻译： DEMODULATR，芯片和数字解调FSK信号的方法
公开(公告)号：WO2005071828A1
公开(公告)日：2005-08-04
申请号：PCT/US2005/001945
申请日：2005-01-21
申请人： THE REGENTS OF THE UNIVERSITY OF MICHIGAN , GHOVANLOO, Maysam , NAJAFI, Khalil
发明人： GHOVANLOO, Maysam , NAJAFI, Khalil
IPC分类号： H03D3/00
CPC分类号： H03D3/006
摘要： A demodulator, chip and method for digitally demodulating an FSK signal utilizing a digital data transfer protocol and a digital demodulator circuit have been developed. The data-rate approaches the carrier-frequency. The one application for this technique is in the magnetically powered wireless systems such as biomedical implants and radio frequency identification (RFID) tags with high data rates above 1 Mbps. The demodulator circuit extracts the serial data bit-stream and a constant-frequency clock from an FSK carrier signal in the 1-20 MHZ range, which can power the wireless system as well. The digital demodulator circuit is implemented entirely with digital circuitry and is called a digital-FSK (DFSK) demodulator.
摘要翻译：已经开发了使用数字数据传输协议和数字解调器电路对FSK信号进行数字解调的解调器，芯片和方法。数据速率接近载波频率。该技术的一个应用是在具有高于1Mbps的高数据速率的诸如生物医学植入物和射频识别（RFID）标签的磁力无线系统中。解调器电路从1-20MHz范围内的FSK载波信号中提取串行数据比特流和恒定频率时钟，这也可为无线系统供电。数字解调器电路完全由数字电路实现，称为数字FSK（DFSK）解调器。

2. 发明申请

WO2004035461A2 MANUFACTURING METHODS AND VACUUM OR HERMETICALLY PACKAGED MICROMACHINED OR MEMS DEVICES FORMED THEREBY HAVING SUBSTANTIALLY VERTICAL FEEDTHROUGHS 审中-公开
标题翻译：制造方法和真空或密封包装微机械或MEMS装置，其形成为具有基本垂直的进料
公开(公告)号：WO2004035461A2
公开(公告)日：2004-04-29
申请号：PCT/US2003/033272
申请日：2003-10-20
申请人： THE REGENTS OF THE UNIVERSITY OF MICHIGAN , NAJAFI, Khalil , GIACHINO, Joseph, M.
发明人： NAJAFI, Khalil , GIACHINO, Joseph, M.
IPC分类号： B81B7/00
CPC分类号： B81B7/007 , B81B7/0006 , H01L2224/48463 , H01L2224/73207
摘要： A vacuum or hermetic packaged micromachined or MEMS device and methods for manufacturing the device so that the device has at least one substantially vertical feedthrough are provided. In a first embodiment, the method includes: providing a MEMS device fabricated on a first side of a substrate and located within a vacuum or hermetic cavity; forming at least one hole completely through the substrate between first and second sides of the substrate after the step of providing; and forming a path of electrically conductive material connecting the MEMS device and the second side of the substrate through the at least one hole to form the at least one substantially vertical feedthrough.
摘要翻译：提供真空或气密封装的微机械加工或MEMS装置以及用于制造该装置的方法，使得该装置具有至少一个基本垂直的馈通。在第一实施例中，该方法包括：提供制造在衬底的第一侧上并位于真空或密封腔内的MEMS器件; 在提供步骤之后，在衬底的第一侧和第二侧之间形成完全穿过衬底的至少一个孔; 以及形成通过所述至少一个孔连接所述MEMS器件和所述衬底的所述第二侧的导电材料的路径，以形成所述至少一个基本垂直的馈通。

3. 发明申请

WO2003089368A3 LOW TEMPERATURE METHOD FOR FORMING A MICROCAVITY ON A SUBSTRATE AND ARTICLE HAVING SAME 审中-公开
公开(公告)号：WO2003089368A3
公开(公告)日：2003-10-30
申请号：PCT/US2003/011848
申请日：2003-04-17
申请人： THE REGENTS OF THE UNIVERSITY OF MICHIGAN , NAJAFI, Khalil , STARK, Brian, H.
发明人： NAJAFI, Khalil , STARK, Brian, H.
IPC分类号： B81B7/00
摘要： A low temperature method for forming a microcavity on a substrate and article having same are provided which utilize electroplated films. The method is particularly useful to package microelectromechanical systems (MEMS) in vacuum on the wafer level and provide sealed feedthroughs to the outside world. The method may be performed in a batch process to substantially reduce cost and to form metal diaphragms. Furthermore, the method is performed at near room temperature, which provides more flexibility in the manufacturing process. The method enables substantial cost savings in the production of vacuum-sealed MEMS. Many feedthroughs can be incorporated into the package to transfer signals in and out of the package. One significant advantage of this method is that it does not require bonding of a second substrate, which reduces the system cost.

4. 发明申请

WO2003062137A3 METHOD OF MAKING A THICK MICROSTRUCTURAL OXIDE LAYER AND DEVICE UTILIZING SAME 审中-公开
公开(公告)号：WO2003062137A3
公开(公告)日：2003-07-31
申请号：PCT/US2003/001467
申请日：2003-01-16
申请人： THE REGENTS OF THE UNIVERSITY OF MICHIGAN , NAJAFI, Khalil , ZHANG, Chunbo
发明人： NAJAFI, Khalil , ZHANG, Chunbo
IPC分类号： B81C1/00
摘要： A method of fabricating a thick silicon dioxide layer without the need for long deposition or oxidation and a device having such a layer are provided. Deep reactive ion etching (DRIE) is used to create high-aspect ratio openings or trenches and microstructures or silicon pillars, which are then oxidized and/or refilled with LPCVD oxide or other deposited silicon oxide films to create layers as thick as the DRIE etched depth allows. Thickness in the range of 10-100/um have been achieved. Periodic stiffeners perpendicular to the direction of the trenches are used to provide support for the pillars during oxidation. The resulting S'02 layer is impermeable and can sustain large pressure difference. Thermal tests show that such thick silicon dioxide diaphragms or layers can effectively thermally isolate heated structures from neighboring structures and devices within a distance of hundred of microns. Such S'02 diaphragms or layers of thickness 50-60f,m can sustain an extrinsic shear stress up to 3-5 Mpa. These thick insulatingmicrostructures or layers can be used in thermal, mechanical, fluidic, optical, and bio microsystems.

5. 发明申请

WO2003062137A2 METHOD OF MAKING A THICK MICROSTRUCTURAL OXIDE LAYER AND DEVICE UTILIZING SAME 审中-公开
标题翻译：制造厚度微结构氧化物层的方法和使用其的装置
公开(公告)号：WO2003062137A2
公开(公告)日：2003-07-31
申请号：PCT/US2003/001467
申请日：2003-01-16
申请人： THE REGENTS OF THE UNIVERSITY OF MICHIGAN , NAJAFI, Khalil , ZHANG, Chunbo
发明人： NAJAFI, Khalil , ZHANG, Chunbo
IPC分类号： B81C1/00
CPC分类号： F28F13/185 , B81B2203/033 , B81C1/0038 , B81C2201/0132 , B81C2201/0178 , F28F2260/00 , H01L21/76208
摘要： A method of fabricating a thick silicon dioxide layer without the need for long deposition or oxidation and a device having such a layer are provided. Deep reactive ion etching (DRIE) is used to create high-aspect ratio openings or trenches and microstructures or silicon pillars, which are then oxidized and/or refilled with LPCVD oxide or other deposited silicon oxide films to create layers as thick as the DRIE etched depth allows. Thickness in the range of 10-100/um have been achieved. Periodic stiffeners perpendicular to the direction of the trenches are used to provide support for the pillars during oxidation. The resulting S'02 layer is impermeable and can sustain large pressure difference. Thermal tests show that such thick silicon dioxide diaphragms or layers can effectively thermally isolate heated structures from neighboring structures and devices within a distance of hundred of microns. Such S'02 diaphragms or layers of thickness 50-60f,m can sustain an extrinsic shear stress up to 3-5 Mpa. These thick insulatingmicrostructures or layers can be used in thermal, mechanical, fluidic, optical, and bio microsystems.
摘要翻译：提供了制造厚二氧化硅层而不需要长时间沉积或氧化的方法和具有这种层的器件。深反应离子蚀刻DRIE用于产生高纵横比的开口或沟槽和微结构或硅柱，然后用LPCVD氧化物或其他沉积的氧化硅膜氧化和/或重新填充以产生与DRIE蚀刻深度允许的厚度相同的层。厚度达到10-100 /μm。垂直于沟槽方向的周期性加强筋用于在氧化过程中为支柱提供支撑。所得的S'02层是不渗透的并且可以承受较大的压力差。热测试表明，这种厚的二氧化硅隔膜或层可以有效地将加热的结构与相邻结构和器件隔离在一百微米的距离内。这种厚度为50-60f m的S'02膜片或m层可承受高达3-5Mpa的外在剪切应力。这些厚的绝缘微结构或层可用于热，机械，流体，光学和生物微系统。

6. 发明申请

WO2010148312A3 INCREASED FREQUENCY POWER GENERATION USING LOW-FREQUENCY AMBIENT VIBRATIONS 审中-公开
标题翻译：使用低频环境振动增加频率发电
公开(公告)号：WO2010148312A3
公开(公告)日：2011-04-07
申请号：PCT/US2010039183
申请日：2010-06-18
申请人： UNIV MICHIGAN , GALCHEV TZENO , NAJAFI KHALIL , KIM HANSEUP
发明人： GALCHEV TZENO , NAJAFI KHALIL , KIM HANSEUP
IPC分类号： H02N2/00 , H02N2/06 , H02N2/18
CPC分类号： H02N2/186 , H01L41/1134 , H01L41/12 , H02K35/02
摘要： An increased frequency power generator that includes a pair of transducers located on opposite sides of a suspended inertial mass. Magnetic attraction is used to couple the mass to each of the two transducers in alternating fashion in response to vibration and other movement externally imparted on the generator. Each transducer includes a suspended magnetic element that couples and decouples to the inertial mass as it reciprocates in the housing due to the applied external moving force. As the inertial mass decouples from one transducer on its way to magnetically connecting to the other transducer, the decoupled suspended magnetic element oscillates at a frequency greater than the imparting force, thereby generating electrical power.
摘要翻译：一种增加的频率发电机，其包括位于悬挂的惯性质量的相对侧上的一对换能器。磁吸引用于响应于外部施加在发电机上的振动和其他运动以交替方式将质量耦合到两个换能器中的每一个。每个换能器包括悬挂的磁性元件，其由于施加的外部移动力而在惯性质量块在壳体中往复运动时耦合和解耦。随着惯性质量与一个换能器在其途中磁耦合到另一个换能器的惯性质量分离，解耦的悬挂磁性元件以大于施加力的频率振荡，从而产生电力。

7. 发明申请

WO2010148312A2 INCREASED FREQUENCY POWER GENERATION USING LOW-FREQUENCY AMBIENT VIBRATIONS 审中-公开
标题翻译：使用低频环境振动增加频率发电
公开(公告)号：WO2010148312A2
公开(公告)日：2010-12-23
申请号：PCT/US2010/039183
申请日：2010-06-18
申请人： THE REGENTS OF THE UNIVERSITY OF MICHIGAN , GALCHEV, Tzeno , NAJAFI, Khalil , KIM, Hanseup
发明人： GALCHEV, Tzeno , NAJAFI, Khalil , KIM, Hanseup
IPC分类号： H02N2/00 , H02N2/18 , H02N2/06
CPC分类号： H02N2/186 , H01L41/1134 , H02K35/02
摘要： An increased frequency power generator that includes a pair of transducers located on opposite sides of a suspended inertial mass. Magnetic attraction is used to couple the mass to each of the two transducers in alternating fashion in response to vibration and other movement externally imparted on the generator. Each transducer includes a suspended magnetic element that couples and decouples to the inertial mass as it reciprocates in the housing due to the applied external moving force. As the inertial mass decouples from one transducer on its way to magnetically connecting to the other transducer, the decoupled suspended magnetic element oscillates at a frequency greater than the imparting force, thereby generating electrical power.
摘要翻译：一种增加频率发电机，其包括位于悬挂的惯性质量的相对侧上的一对换能器。磁吸引用于响应于外部施加在发电机上的振动和其它运动以交替方式将质量耦合到两个换能器中的每一个。每个换能器包括悬挂的磁性元件，其由于所施加的外部移动力而在惯性质量体在壳体中往复运动时耦合和解耦。由于惯性质量在一个换能器到磁性连接到另一个换能器的途中脱离，所以解耦的悬挂磁性元件以大于施加力的频率振荡，从而产生电力。

8. 发明申请

WO2004065968A1 MICROMACHINED CAPACITIVE LATERAL ACCELEROMETER DEVICE AND MONOLITHIC, THREE-AXIS ACCELEROMETER HAVING SAME 审中-公开
标题翻译： MICROMACHEDED电容式侧向加速度计装置和单相，三轴加速度计
公开(公告)号：WO2004065968A1
公开(公告)日：2004-08-05
申请号：PCT/US2004/001347
申请日：2004-01-16
申请人： THE REGENTS OF THE UNIVERSITY OF MICHIGAN , NAJAFI, Khalil , CHAE, Junseok
发明人： NAJAFI, Khalil , CHAE, Junseok
IPC分类号： G01P15/125
CPC分类号： G01P15/18 , G01P15/0802 , G01P15/125 , G01P2015/0814
摘要： A high-sensitivity and low-noise micromachined capacitive lateral accelerometer device having an input axis and a monolithic, three-axis accelerometer utilizing the device are provided. The device includes at least one electrode having a side surface normal to the input axis. A relatively large proofmass has at least one side surface normal to the input axis and extends along a width of the proofmass. The proofmas s is movable against acceleration relative to the at least one electrode due to inertial force along the input axis to obtain a capacitive variation between the at least one electrode and the proofmass. The side surfaces are spaced apart to define a narrow, high-aspect ratio sensing gap which extends along substantially the entire width of the proofmass. The proofmass forms a sense capacitor with the at least one electrode.
摘要翻译：提供具有输入轴和利用该装置的单片三轴加速度计的高灵敏度和低噪声微加工电容横向加速度计装置。该装置包括具有与输入轴线垂直的侧面的至少一个电极。相对较大的校样具有与输入轴垂直的至少一个侧表面并且沿着校样的宽度延伸。由于沿着输入轴的惯性力，校准件可相对于至少一个电极抵抗加速度移动，以获得至少一个电极和校样物之间的电容变化。侧表面间隔开以限定沿着校样的大致整个宽度延伸的狭窄的高纵深比检测间隙。校样件与至少一个电极形成感测电容器。

9. 发明申请

WO2003089368A2 LOW TEMPERATURE METHOD FOR FORMING A MICROCAVITY ON A SUBSTRATE AND ARTICLE HAVING SAME 审中-公开
标题翻译：用于形成基板上的微观结构的低温方法
公开(公告)号：WO2003089368A2
公开(公告)日：2003-10-30
申请号：PCT/US2003/011848
申请日：2003-04-17
申请人： THE REGENTS OF THE UNIVERSITY OF MICHIGAN , NAJAFI, Khalil , STARK, Brian, H.
发明人： NAJAFI, Khalil , STARK, Brian, H.
IPC分类号： B81B7/00
CPC分类号： B81C1/00333 , B81C2203/0136 , B81C2203/0145 , Y10T428/13
摘要： A low temperature method for forming a microcavity on a substrate and article having same are provided which utilize electroplated films. The method is particularly useful to package microelectromechanical systems (MEMS) in vacuum on the wafer level and provide sealed feedthroughs to the outside world. The method may be performed in a batch process to substantially reduce cost and to form metal diaphragms. Furthermore, the method is performed at near room temperature, which provides more flexibility in the manufacturing process. The method enables substantial cost savings in the production of vacuum-sealed MEMS. Many feedthroughs can be incorporated into the package to transfer signals in and out of the package. One significant advantage of this method is that it does not require bonding of a second substrate, which reduces the system cost.
摘要翻译：提供了一种用于在基板上形成微腔的低温方法及使用电镀膜的制品。该方法特别适用于将微机电系统（MEMS）在真空中封装在晶片级上，并向外界提供密封的馈通。该方法可以以间歇方式进行，以显着降低成本并形成金属隔膜。此外，该方法在接近室温下进行，这在制造过程中提供了更大的灵活性。该方法能够在真空密封的MEMS的生产中节省大量成本。许多馈通可以并入到包装中以将信号传入和传出包装。该方法的一个显着优点是不需要第二衬底的结合，这降低了系统成本。

10. 发明申请

WO2003034469A2 METHOD OF FABRICATING A DEVICE HAVING A DESIRED NON-PLANAR SURFACE OR PROFILE AND DEVICE PRODUCED THEREBY 审中-公开
标题翻译：制造具有所需非平面表面或型材的器件的方法及其制造的器件
公开(公告)号：WO2003034469A2
公开(公告)日：2003-04-24
申请号：PCT/US2002/032694
申请日：2002-10-15
申请人： THE REGENTS OF THE UNIVERSITY OF MICHIGAN , NAJAFI, Khalil , TSUNG-KUAN, Chou
发明人： NAJAFI, Khalil , TSUNG-KUAN, Chou
IPC分类号： H01L
CPC分类号： B81C1/00103 , B81B2203/0392 , B81C1/00547 , B81C1/00626 , B81C2201/0104 , B81C2201/0132 , B81C2201/0133 , H01L21/30604 , H01L21/3065 , H01L21/3083 , Y10S438/974 , Y10S438/977
摘要： A method of fabricating a device having a desired non-planar surface or profile and device produced thereby are provided. A silicon wafer is first coated with silicon nitride, patterned, and DRIE to obtain the desired etch profile. Silicon pillars between trenches are then etched using an isotropic wet etch, resulting in a curved well. The wafer is then oxidized to ∼2 µm to smooth the surface of the well, and to protect the well from an ensuring planarization process. The nitride is then selectively removed, and the wafer surface is planarized by removing the Si left in the field regions using either a maskless DRIE or CMP. Finally, the oxide is etched away to produce a wafer with a curved surface.
摘要翻译：提供一种制造具有期望的非平面表面或轮廓的装置的方法以及由此制造的装置。硅晶片首先用氮化硅，图案化和DRIE涂覆以获得所需的蚀刻轮廓。然后使用各向同性的湿蚀刻蚀刻沟槽之间的硅柱，得到弯曲的井。然后将晶片氧化成类似于2微米，以平滑井的表面，并保护井免受确保的平坦化过程。然后选择性地去除氮化物，并且通过使用无掩模DRIE或CMP去除场区域中留下的Si来平坦化晶片表面。最后，将氧化物蚀刻掉以产生具有弯曲表面的晶片。

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