专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2011018478A1 ELECTROLYTE AND METHOD FOR THE ELECTROPLATING OF COPPER ON A BARRIER LAYER, AND SEMICONDUCTOR SUBSTRATE OBTAINED WITH SAID METHOD 审中-公开
标题翻译：用于电镀铜箔的电解质和方法以及用方法获得的半导体衬底
公开(公告)号：WO2011018478A1
公开(公告)日：2011-02-17
申请号：PCT/EP2010/061693
申请日：2010-08-11
申请人： ALCHIMER , GONZALEZ, José , MEVELLEC, Vincent , RAYNAL, Frédéric
发明人： GONZALEZ, José , MEVELLEC, Vincent , RAYNAL, Frédéric
IPC分类号： C25D3/38 , C25D7/12 , H01L21/288 , H01L21/768
CPC分类号： C25D7/123 , C25D3/38 , H01L21/2885 , H01L21/76873 , H01L21/76877
摘要： The invention relates to an electrolyte for copper electroplating on a copper diffusion barrier layer (B), the barrier layer (B) covering a surface of a semiconductor substrate (S), said electrolyte comprising: - a source of copper ions, - a solvent, wherein the electrolyte has a neutral or basic pH and comprises a suppressor (10) adapted to adsorb directly on the barrier layer (B) so as to at least partially mask the surface of the barrier layer (B). The invention also relates to a method for the electroplating of copper on a barrier layer using said electrolyte, and a semiconductor substrate comprising a copper layer formed using said method.
摘要翻译：本发明涉及一种用于在铜扩散阻挡层（B）上进行铜电镀的电解质，所述阻挡层（B）覆盖半导体衬底（S）的表面，所述电解质包括： - 铜离子源， - 溶剂，其中所述电解质具有中性或碱性pH，并且包括适于直接吸附在所述阻挡层（B）上以至少部分地掩蔽所述阻挡层（B）的表面的抑制剂（10）。本发明还涉及使用所述电解质在阻挡层上电镀铜的方法，以及包括使用所述方法形成的铜层的半导体衬底。

2. 发明申请

WO2010026243A1 METHOD FOR REPAIRING COPPER DIFFUSION BARRIER LAYERS ON A SEMICONDUCTOR SOLID SUBSTRATE AND REPAIR KIT FOR IMPLEMENTING THIS METHOD. 审中-公开
标题翻译：用于修复半导体固体基板上的铜扩散阻挡层和修复方法的方法。
公开(公告)号：WO2010026243A1
公开(公告)日：2010-03-11
申请号：PCT/EP2009/061527
申请日：2009-09-07
申请人： ALCHIMER , MEVELLEC, Vincent
发明人： MEVELLEC, Vincent
IPC分类号： C23C18/18 , C23C18/31 , H01L21/768
CPC分类号： C23C18/1893 , C23C18/31 , C23C18/34 , H01L21/288 , H01L21/76846 , H01L21/76868 , H01L21/76873 , H01L21/76898
摘要： Method for repairing copper diffusion barrier layers on a semiconductor solid substrate and repair kit for implementing this method. One subject of the present invention is a method for repairing a surface of a substrate coated with a discontinuous copper diffusion barrier layer of a titanium-based material. According to the invention, this method comprises: a) the contacting of the surface with a suspension containing copper or copper alloy nanoparticles for a time of between 1 s and 15 min; and b) the contacting of the thus treated surface with a liquid solution having a pH of between 8.5 and 12 and containing: - at least one metal salt, - at least one reducing agent, - at least one stabilizer at a temperature of between 50°C and 90°C, preferably between 60°C and 80°C, for a time of between 30 s and 10 min, preferably between 1 min and 5 min, in order to thus form a metallic film having a thickness of at least 50 nanometers re-establishing the continuity of the copper diffusion barrier layer. Application: Fabrication of interconnects in integrated circuits.
摘要翻译：在半导体固体基板上修复铜扩散阻挡层的方法以及用于实施该方法的修理工具。本发明的一个主题是用于修复涂覆有钛基材料的不连续铜扩散阻挡层的基板的表面的方法。根据本发明，该方法包括：a）使表面与含有铜或铜合金纳米颗粒的悬浮液接触1至15分钟; 和b）如此处理的表面与pH为8.5至12的液体溶液的接触，并且含有： - 至少一种金属盐，至少一种还原剂， - 至少一种稳定剂，温度为50 ℃和90℃，优选60℃至80℃之间，时间为30秒至10分钟，优选1分钟至5分钟，以便形成至少具有至少厚度的金属膜 50纳米重新建立铜扩散阻挡层的连续性。应用：集成电路中互连的制造。

3. 发明申请

WO2010001054A2 PROCEDE DE PREPARATION D'UN FILM ISOLANT ELECTRIQUE ET APPLICATION POUR LA METALLISATION DE VIAS TRAVERSANTS 审中-公开
标题翻译：制备电绝缘膜的方法和金属化的应用
公开(公告)号：WO2010001054A2
公开(公告)日：2010-01-07
申请号：PCT/FR2009/051279
申请日：2009-07-01
申请人： ALCHIMER , MEVELLEC, Vincent , GONZALEZ, José , SUHR, Dominique
发明人： MEVELLEC, Vincent , GONZALEZ, José , SUHR, Dominique
IPC分类号： C09D5/44 , C25D7/12 , H01L21/288 , C25D13/04 , C25D13/08 , H01L21/02 , H01L23/52
CPC分类号： H01L21/02118 , C25D7/123 , C25D13/18 , H01L21/02282 , H01L21/288 , H01L21/312 , H01L21/76843 , H01L21/76898 , H01L2924/0002 , H01L2924/00
摘要： La présente invention concerne essentiellement un procédé de préparation d'un film isolant électrique à la surface d'un substrat conducteur ou semiconducteur de l'électricité, tel qu'un substrat de silicium. Selon l'invention, ce procédé comprend : a) la mise en contact de ladite surface avec une solution liquide comprenant : un solvant protique; au moins un sel de diazonium; au moins un monomère polymérisable en chaîne et soluble dans ledit solvant protique; au moins un acide en une quantité suffisante pour stabiliser ledit sel de diazonium par ajustement du pH de ladite solution à une valeur inférieure à 7, de préférence inférieure à 2,5; b) la polarisation de ladite surface selon un mode potentio- ou galvano-pulsé pendant une durée suffisante pour former un film présentant une épaisseur d'au moins 60 nanomètres, et de préférence comprise entre 80 et 500 nanomètres. Application : Métallisation de vias traversants, notamment de circuits intégrés 3D.
摘要翻译：本发明主要涉及在导电或半导体衬底（例如硅衬底）的表面上制备电绝缘膜的方法。根据本发明，该方法包括以下步骤：a）使所述表面与液体溶液接触，所述液体溶液包括：质子溶剂，至少一种重氮盐，至少一种可溶于所述质子溶剂中的一链可聚合单体，以及通过将所述溶液的pH调节至低于7，优选低于2.5的值，足以稳定所述重氮盐的至少一种酸; 和b）所述表面以脉冲恒电位或恒电流模式极化，时间足以形成厚度为至少60纳米，优选为80至500纳米的膜。应用：通孔的金属化，特别适用于3-D集成电路。

4. 发明申请

WO2008078052A2 METHOD FOR PREPARING AN ORGANIC FILM AT THE SURFACE OF A SOLID SUBSTRATEIN NON-ELECTROCHEMICAL CONDITIONS, SOLID SUBSTRATE THUS FORMED AND PREPARATION KIT 审中-公开
标题翻译：在固体底物非电化学条件表面上制备有机膜的方法，该形成和制备试剂盒的固体基质
公开(公告)号：WO2008078052A2
公开(公告)日：2008-07-03
申请号：PCT/FR2007052556
申请日：2007-12-19
申请人： COMMISSARIAT ENERGIE ATOMIQUE , MEVELLEC VINCENT , ROUSSEL SEBASTIEN , PALACIN SERGE , BERTHELOT THOMAS , BAUDIN CECILE , TRENGGONO ADHITYA , DENIAU GUY
发明人： MEVELLEC VINCENT , ROUSSEL SEBASTIEN , PALACIN SERGE , BERTHELOT THOMAS , BAUDIN CECILE , TRENGGONO ADHITYA , DENIAU GUY
CPC分类号： C09D4/00 , B82Y30/00 , C08J7/02 , C08J7/04 , C23C18/04 , C23C18/08 , C23C18/14 , C23C18/28 , C23C18/31 , H01L51/0006 , H01L51/0021 , H01L51/0075 , Y10T428/31616 , Y10T428/31681
摘要： The present invention relates to a method for preparing an organic film at the surface of a solid substrate, comprising a step of contacting said surface with a liquid solution containing (i) at least one solvent, at least one adhesion primer in non-electrochemical conditions and for generating radicalar entities from the adhesion primer. The liquid solution may further include (iii) at least one monomer different from the adhesion primer and polymerisable in a radicalar manner. The present invention also relates to an electrically non-conductive solid substrate on which an organic film is grafted according to said method, and to a kit for preparing an essentially polymeric organic film at the surface of the solid substrate.
摘要翻译：本发明涉及一种在固体基质表面制备有机膜的方法，包括使所述表面与液体溶液接触的步骤，所述液体溶液含有（i）至少一种溶剂，至少一种非电化学条件下的粘合底漆并用于从粘附底物产生真实实体。液体溶液可以进一步包括（iii）至少一种不同于粘合引物的单体，并且可以以激进的方式聚合。本发明还涉及根据所述方法在其上接枝有机膜的非导电固体基材，以及用于在固体基材表面制备基本上聚合的有机膜的试剂盒。

5. 发明申请

WO2012150133A3 METHOD OF DEPOSITING METALLIC LAYERS BASED ON NICKEL OR COBALT ON A SEMICONDUCTING SOLID SUBSTRATE; KIT FOR APPLICATION OF SAID METHOD 审中-公开
标题翻译：在半导体固体基底上沉积镍或钴的金属层的方法; 套用方法
公开(公告)号：WO2012150133A3
公开(公告)日：2013-04-18
申请号：PCT/EP2012057085
申请日：2012-04-18
申请人： ALCHIMER , MEVELLEC VINCENT , SUHR DOMINIQUE
发明人： MEVELLEC VINCENT , SUHR DOMINIQUE
IPC分类号： C23C18/32
CPC分类号： H01L21/288 , C23C18/32 , H01L21/76843 , H01L21/76898
摘要： The present invention relates to a kit intended for the deposition of nickel or cobalt in the cavities of a semiconductor substrate intended to form through- silicon vias (TSV) for making interconnections in integrated circuits in three dimensions. The invention also relates to a method of metallization of the insulating surface of such a substrate which comprises contacting the surface with a liquid aqueous solution containing: - at least one metal salt of nickel or cobalt; - at least one reducing agent; - at least one polymer bearing amine functions, and - at least one agent stabilizing the metal ions. The step coverage of the layer of nickel or cobalt obtained can be greater than 80%, which facilitates subsequent filling of the vias with copper by electrodeposition.
摘要翻译：本发明涉及一种用于在半导体衬底的空腔中沉积镍或钴的试剂盒，旨在形成用于在三维集成电路中形成互连的硅通孔（TSV）。本发明还涉及这种基底的绝缘表面的金属化方法，该方法包括使表面与含有：至少一种镍或钴的金属盐的液体水溶液接触; - 至少一种还原剂; - 至少一种带有胺的聚合物起作用，和 - 至少一种稳定金属离子的试剂。获得的镍或钴层的阶梯覆盖率可以大于80％，这有利于随后通过电沉积用铜填充通孔。

6. 发明申请

WO2012150133A2 METHOD OF DEPOSITING METALLIC LAYERS BASED ON NICKEL OR COBALT ON A SEMICONDUCTING SOLID SUBSTRATE; KIT FOR APPLICATION OF SAID METHOD 审中-公开
标题翻译：在半导体固体基底上沉积基于镍或钴的金属层的方法; 套用方法
公开(公告)号：WO2012150133A2
公开(公告)日：2012-11-08
申请号：PCT/EP2012/057085
申请日：2012-04-18
申请人： ALCHIMER , MEVELLEC, Vincent , SUHR, Dominique
发明人： MEVELLEC, Vincent , SUHR, Dominique
IPC分类号： C23C18/32 , C23C18/34 , C25D5/02 , C25D3/38 , H01L21/3205
CPC分类号： H01L21/288 , C23C18/32 , H01L21/76843 , H01L21/76898
摘要： The present invention relates to a kit intended for the deposition of nickel or cobalt in the cavities of a semiconductor substrate intended to form through- silicon vias (TSV) for making interconnections in integrated circuits in three dimensions. The invention also relates to a method of metallization of the insulating surface of such a substrate which comprises contacting the surface with a liquid aqueous solution containing: - at least one metal salt of nickel or cobalt; - at least one reducing agent; - at least one polymer bearing amine functions, and - at least one agent stabilizing the metal ions. The step coverage of the layer of nickel or cobalt obtained can be greater than 80%, which facilitates subsequent filling of the vias with copper by electrodeposition.
摘要翻译：本发明涉及一种用于在半导体衬底的空腔中沉积镍或钴的试剂盒，旨在形成用于在三维集成电路中形成互连的硅通孔（TSV）。本发明还涉及这种基底的绝缘表面的金属化方法，该方法包括使表面与含有：至少一种镍或钴的金属盐的液体水溶液接触; - 至少一种还原剂; - 至少一种带有胺的聚合物起作用，和 - 至少一种稳定金属离子的试剂。获得的镍或钴层的阶梯覆盖率可以大于80％，这有利于随后通过电沉积用铜填充通孔。

7. 发明申请

WO2011039310A1 SOLUTION AND METHOD FOR ACTIVATING THE OXIDIZED SURFACE OF A SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：用于激活半导体基板的氧化表面的方法和方法
公开(公告)号：WO2011039310A1
公开(公告)日：2011-04-07
申请号：PCT/EP2010/064565
申请日：2010-09-30
申请人： ALCHIMER , MEVELLEC, Vincent , SUHR, Dominique
发明人： MEVELLEC, Vincent , SUHR, Dominique
IPC分类号： C23C18/18 , C23C18/30
CPC分类号： C23C18/1882 , C23C18/1653 , C23C18/1696 , C23C18/1879 , C23C18/32 , H01L21/288 , H01L21/76843 , H01L21/76874 , H01L21/76898
摘要： The present invention relates to a solution and a method for activating the oxidized surface of a substrate, in particular of a semiconducting substrate, for its subsequent coating by a metal layer deposited by the electroless method. According to the invention, this composition contains: A) an activator consisting of one or more palladium complexes: B) a bifunctional organic binder consisting one or more organosilane complexes; C) a solvent system consisting one or more solvents for solubilizing the said activator and the said binder. Application: Fabrication of electronic devices such as in particular integrated circuits in particular three-dimensional.
摘要翻译：本发明涉及一种用于激活衬底的氧化表面，特别是半导体衬底的氧化表面的方法和方法，用于随后通过由无电镀方法沉积的金属层进行涂覆。根据本发明，该组合物包含：A）由一种或多种钯络合物组成的活化剂：B）由一种或多种有机硅烷配合物组成的双官能有机粘合剂; C）包含一种或多种用于增溶所述活化剂和所述粘合剂的溶剂的溶剂体系。应用：电子设备的制造，特别是特别是三维的集成电路。

8. 发明申请

WO2011029860A1 SOLUTION AND PROCESS FOR ACTIVATING THE SURFACE OF A SEMICONDUCTIVE SUBSTRATE 审中-公开
标题翻译：用于激活半导体衬底表面的方法和方法
公开(公告)号：WO2011029860A1
公开(公告)日：2011-03-17
申请号：PCT/EP2010/063210
申请日：2010-09-09
申请人： ALCHIMER , MEVELLEC, Vincent , SUHR, Dominique
发明人： MEVELLEC, Vincent , SUHR, Dominique
IPC分类号： C23C18/20 , C23C18/30
CPC分类号： C23C18/1882 , C23C18/1653 , C23C18/1696 , C23C18/1879 , C23C18/2066 , C23C18/30 , C23C18/32 , H01L21/288 , H01L21/76843 , H01L21/76874 , H01L21/76898
摘要： The present invention relates to a solution and a process for activating the surface of a substrate comprising at least one area formed from a polymer, for the purpose of subsequently covering it with a metallic layer deposited via an electroless process. According to the invention, this composition contains: A) an activator formed from one or more palladium complexes; B) a binder formed from one or more organic compounds chosen from compounds comprising at least two glycidyl functions and at least two isocyanate functions; C) a solvent system formed from one or more solvents capable of dissolving said activator and said binder. Application: Manufacture of electronic devices such as, in particular, integrated circuits, especially in three dimensions.
摘要翻译：本发明涉及用于激活基材表面的溶液和方法，其包括由聚合物形成的至少一个区域，以便随后用经由无电镀方法沉积的金属层覆盖该表面。根据本发明，该组合物包含：A）由一种或多种钯络合物形成的活化剂; B）由一种或多种选自包含至少两个缩水甘油基官能团和至少两种异氰酸酯官能团的化合物的有机化合物形成的粘合剂; C）由能够溶解所述活化剂和所述粘合剂的一种或多种溶剂形成的溶剂体系。应用：电子设备的制造，特别是集成电路，尤其是三维。

9. 发明申请

WO2012160063A1 METHOD FOR FORMING A VERTICAL ELECTRICAL CONNECTION IN A LAYERED SEMICONDUCTOR STRUCTURE 审中-公开
标题翻译：在层状半导体结构中形成垂直电连接的方法
公开(公告)号：WO2012160063A1
公开(公告)日：2012-11-29
申请号：PCT/EP2012/059503
申请日：2012-05-22
申请人： ALCHIMER , SUHR, Dominique , MEVELLEC, Vincent
发明人： SUHR, Dominique , MEVELLEC, Vincent
IPC分类号： H01L21/768 , H01L21/288 , H01L23/48
CPC分类号： H01L21/76816 , H01L21/02063 , H01L21/288 , H01L21/2885 , H01L21/31111 , H01L21/76823 , H01L21/76831 , H01L21/76874 , H01L21/76879 , H01L21/76898 , H01L23/481 , H01L23/5226 , H01L23/5283 , H01L23/53238 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： The invention proposes a method for forming a vertical electrical connection (50) in a layered semiconductor structure (1), comprising the following steps: - providing (100) a layered semiconductor structure (1), said layered semiconductor structure (1) comprising: - a support substrate (20) including an first surface (22) and a second surface (24), - an insulating layer (30) overlying the first surface (22) of the support substrate (20), and - at least one device structure (40) formed in the insulating layer (30); and - drilling (300) a via (50) from the second surface of the support substrate (20) up to the device structure (40), in order to expose the device structure (40); characterized in that drilling (300) of the insulating layer is at least performed by wet etching (320).
摘要翻译：本发明提出了一种在层状半导体结构（1）中形成垂直电连接（50）的方法，包括以下步骤： - 提供（100）层状半导体结构（1），所述分层半导体结构（1）包括： - 包括第一表面（22）和第二表面（24）的支撑衬底（20）， - 覆盖所述支撑衬底（20）的第一表面（22）的绝缘层（30），以及 - 至少一个器件在绝缘层（30）中形成的结构（40）; 以及 - 从所述支撑基板（20）的第二表面钻孔（300）通孔（50）直到所述装置结构（40），以暴露所述装置结构（40）; 其特征在于，绝缘层的钻孔（300）至少通过湿蚀刻（320）进行。

10. 发明申请

WO2010001054A3 METHOD OF PREPARING AN ELECTRICAL INSULATION FILM AND APPLICATION FOR THE METALLIZATION OF THROUGH-VIAS 审中-公开
标题翻译：制备电绝缘膜的方法以及通过VIAS的金属化应用
公开(公告)号：WO2010001054A3
公开(公告)日：2010-04-22
申请号：PCT/FR2009051279
申请日：2009-07-01
申请人： ALCHIMER , MEVELLEC VINCENT , GONZALEZ JOSE , SUHR DOMINIQUE
发明人： MEVELLEC VINCENT , GONZALEZ JOSE , SUHR DOMINIQUE
IPC分类号： C09D5/44 , C25D7/12 , H01L21/288
CPC分类号： C25D7/123 , C25D13/18 , H01L21/288 , H01L21/312 , H01L21/76843 , H01L21/76898 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates essentially to a method of preparing an electrical insulating film on the surface of an electrically conducting or semiconducting substrate, such as a silicon substrate. According to the invention, this method comprises the following: a) said surface is brought into contact with a liquid solution comprising: a protic solvent, at least one diazonium salt, at least one in-chain polymerizable monomer soluble in said protic solvent, and at least one acid in an amount sufficient to stabilize said diazonium salt by adjusting the pH of said solution to a value below 7, preferably below 2.5; and b) said surface is polarized in pulse potentiostatic or galvanostatic mode for a time sufficient to form a film having a thickness of at least 60 nanometres, and preferably between 80 and 500 nanometres. Application: metallization of through-vias, especially for 3-D integrated circuits.
摘要翻译：本发明主要涉及在导电或半导体衬底（例如硅衬底）的表面上制备电绝缘膜的方法。根据本发明，该方法包括以下步骤：a）使所述表面与液体溶液接触，所述液体溶液包含：质子溶剂，至少一种重氮盐，至少一种可溶于所述质子溶剂的链内可聚合单体和至少一种酸，其量足以通过将所述溶液的pH调节至低于7，优选低于2.5的值来稳定所述重氮盐; 和b）所述表面在脉冲恒电位或恒电流模式下极化足以形成厚度至少60纳米，优选80-500纳米的膜的时间。应用：通孔金属化，尤其是3-D集成电路。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式