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    • 6. 发明申请
    • A SIMPLE ROUTE FOR ALKALI METAL INCORPORATION IN SOLUTION-PROCESSED CRYSTALLINE SEMICONDUCTORS
    • 溶液加工晶体半导体中碱金属纳入简单路线
    • WO2011075728A3
    • 2011-10-06
    • PCT/US2010061323
    • 2010-12-20
    • UNIV CALIFORNIAYANG YANGHOU WEI-JENLI SHENG-HANTUNG CHUN-CHIH
    • YANG YANGHOU WEI-JENLI SHENG-HANTUNG CHUN-CHIH
    • H01L21/205
    • H01L21/02551H01L21/02568H01L21/02628H01L31/0322H01L31/0725H01L31/0749H01L31/18Y02E10/541
    • A precursor solution for producing a semiconductor includes at least one of an alkali metal or an alkali metal compound dissolved in a solvent, and a metal chalcogenide dissolved in the solvent. A method of producing a precursor solution for producing a semiconductor includes preparing a first precursor solution that has at least one of an alkali metal or an alkali metal compound dissolved in a first solvent, preparing a second precursor solution that has a metal chalcogenide dissolved in a second solvent, and combining the first and second precursor solutions to obtain the precursor solution for producing the semiconductor. A method of producing a semiconductor device includes providing a precursor solution for producing a semiconductor layer on a substructure, and forming a layer of the precursor solution on the substructure. The precursor solution includes at least one of an alkali metal or an alkali metal compound dissolved in a solvent, and a metal chalcogenide dissolved in the solvent.
    • 用于制造半导体的前体溶液包括溶解在溶剂中的碱金属或碱金属化合物和溶解在溶剂中的金属硫属元素化物中的至少一种。 生产用于生产半导体的前体溶液的方法包括:制备第一前体溶液,其具有溶解在第一溶剂中的碱金属或碱金属化合物中的至少一种;制备第二前体溶液,其具有溶解在第一溶剂中的金属硫属元素化物 第二溶剂,并且合并第一和第二前体溶液以获得用于生产半导体的前体溶液。 一种制造半导体器件的方法包括:提供用于在子结构上制造半导体层的前体溶液,以及在该子结构上形成前体溶液层。 前体溶液包括溶解在溶剂中的碱金属或碱金属化合物中的至少一种以及溶解在溶剂中的金属硫族化合物。