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1. 发明申请

WO1996042108A1 SUBSTRATE CARRYING DEVICE 审中-公开
标题翻译：基板承载设备
公开(公告)号：WO1996042108A1
公开(公告)日：1996-12-27
申请号：PCT/JP1996001531
申请日：1996-06-06
申请人： KOKUSAI ELECTRIC CO., LTD. , TAKEBAYASHI, Yuji , AKAO, Tokunobu , KONNO, Yoshikazu
发明人： KOKUSAI ELECTRIC CO., LTD.
IPC分类号： H01L21/68
CPC分类号： H01L21/67748 , H01L21/68 , H01L21/687 , H01L21/68707 , Y10S414/136 , Y10S414/14 , Y10S414/141
摘要： A substrate carrying device for positioning a substrate without putting any load on a carrying arm, which comprises a rotating shaft (12) rotatably and vertically movably mounted on a base table (11), an extensible carrying arm (14) rotatably supported on the rotating shaft (12), and a substrate receiver (16) mounted at a leading end of the carrying arm (14) for placement of a substrate (18) thereon. A guide base (20) is fixed to the rotating shaft (12), the guide base (20) being disposed below the substrate receiver (16) in such a manner as to become substantially parallel therewith, and a substrate alignment mechanism (21) is mounted on the rotating shaft (12) via the guide base (20). The substrate alignment mechanism (21) has a pair of position correcting members (24, 24) that are connected to air cylinders (22). When the position correcting members (24, 24) are displaced by driving the air cylinders (22, 22), the position correcting members (24, 24) correct the position of the substrate (18).
摘要翻译：一种用于定位基板而不对承载臂施加任何载荷的基板承载装置，该承载臂包括可旋转和垂直移动地安装在基台（11）上的旋转轴（12），可旋转地支撑在旋转轴（12）和安装在所述承载臂（14）的前端的用于在其上放置衬底（18）的衬底接收器（16）。引导基座（20）固定在旋转轴（12）上，引导基座（20）以基本上与其平行的方式设置在基板接收器（16）的下方，以及基板对准机构（21）经由引导基座（20）安装在旋转轴（12）上。基板对准机构（21）具有与气缸（22）连接的一对位置校正部件（24,24）。当通过驱动气缸（22,22）来移动位置校正构件（24,24）时，位置校正构件（24,24）校正衬底（18）的位置。

2. 发明申请

WO1998005061A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：WO1998005061A1
公开(公告)日：1998-02-05
申请号：PCT/JP1997002666
申请日：1997-07-31
申请人： SONY CORPORATION , KOKUSAI ELECTRIC CO., LTD. , FUJITA, Shigeru , FURUNO, Makoto , ITATANI, Hideharu
发明人： SONY CORPORATION , KOKUSAI ELECTRIC CO., LTD.
IPC分类号： H01L21/31
CPC分类号： C23C16/46 , Y10T29/41
摘要： In a method for manufacturing semiconductor device, wafers W are respectively placed on the wafer mounting stages (2) of a single wafer processing low-pressure CVD system including a heat-treating chamber (1) and the wafer mounting stages (2) which are vertically provided in the chamber, and films are formed on the wafers W while the wafers W are heated. At the time of loading the wafers W into the chamber preheated to a desired heat-treating temperature, at least the wafers W placed on the stages (2) other than the lowest stage (2) are not immediately placed on the stages, but left in the chamber (1) until the temperatures at the central parts of the wafers W rise to near the temperature in the chamber (1). Thereafter, the wafers W are placed on the prescribed stages of the stages (2) and the films are formed on the wafers W.
摘要翻译：在制造半导体器件的方法中，将晶片W分别放置在包括热处理室（1）和晶片安装级（2）的单晶片处理低压CVD系统的晶片安装级（2）上，垂直设置在腔室中，并且在晶片W被加热的同时在晶片W上形成膜。在将晶片W装载到预热到期望的热处理温度的室中时，至少放置在除了最低级（2）之外的级（2）上的晶片W不会立即放置在级上，而是留下在腔室（1）中直到晶片W的中心部分的温度升高到接近室（1）中的温度。此后，将晶片W放置在级（2）的规定级上，并且在晶片W上形成膜。

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