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    • 1. 发明申请
    • METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    • 制造半导体器件的方法
    • WO1998005061A1
    • 1998-02-05
    • PCT/JP1997002666
    • 1997-07-31
    • SONY CORPORATIONKOKUSAI ELECTRIC CO., LTD.FUJITA, ShigeruFURUNO, MakotoITATANI, Hideharu
    • SONY CORPORATIONKOKUSAI ELECTRIC CO., LTD.
    • H01L21/31
    • C23C16/46Y10T29/41
    • In a method for manufacturing semiconductor device, wafers W are respectively placed on the wafer mounting stages (2) of a single wafer processing low-pressure CVD system including a heat-treating chamber (1) and the wafer mounting stages (2) which are vertically provided in the chamber, and films are formed on the wafers W while the wafers W are heated. At the time of loading the wafers W into the chamber preheated to a desired heat-treating temperature, at least the wafers W placed on the stages (2) other than the lowest stage (2) are not immediately placed on the stages, but left in the chamber (1) until the temperatures at the central parts of the wafers W rise to near the temperature in the chamber (1). Thereafter, the wafers W are placed on the prescribed stages of the stages (2) and the films are formed on the wafers W.
    • 在制造半导体器件的方法中,将晶片W分别放置在包括热处理室(1)和晶片安装级(2)的单晶片处理低压CVD系统的晶片安装级(2)上, 垂直设置在腔室中,并且在晶片W被加热的同时在晶片W上形成膜。 在将晶片W装载到预热到期望的热处理温度的室中时,至少放置在除了最低级(2)之外的级(2)上的晶片W不会立即放置在级上,而是留下 在腔室(1)中直到晶片W的中心部分的温度升高到接近室(1)中的温度。 此后,将晶片W放置在级(2)的规定级上,并且在晶片W上形成膜。