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1. 发明申请

WO2020030907A1 ELECTRICAL COMPONENT COMPRISING A LEAD-FREE THIN FILM CERAMIC MEMBER AND AN ALUMINA BARRIER LAYER 审中-公开
公开(公告)号：WO2020030907A1
公开(公告)日：2020-02-13
申请号：PCT/GB2019/052212
申请日：2019-08-07
申请人： XAAR TECHNOLOGY LIMITED , MARDILOVICH, Peter , GIBBONS, Brady , KO, Song Won
发明人： MARDILOVICH, Peter , GIBBONS, Brady , KO, Song Won
IPC分类号： H01L41/08 , H01L41/187 , H01L27/08
摘要： The present invention relates to an electrical componentfor a MEMS device, in particular, but not limited to, an electromechanical actuator. It may find particularly beneficial application as an actuator element for a droplet deposition head. In one aspect, the present inventionprovides anelectrical component comprising: i)a substrate layer; ii)at least one electrical element; and iii)at least one barrier layer comprising amorphous alumina, said at least one barrier layer arranged over at least a portion of the substrate layerso as to separate the substrate layer from the at least one electrical element; wherein each of the at least one electrical element comprises: a)a lead-free thin film ceramic member formed of a lead-free ceramic material having a major proportion of a perovskite phase; and b)first and second electrodes disposed adjacent the lead-free thin film ceramic member such that a potential difference may be established between the first and second electrodes, through the lead-free thin film ceramic member during operation; and wherein the electrical component is configured so that the lead-free thin film ceramic member of each of the at least one electrical element is disposed adjacent to the barrier layer over one or more regions.

2. 发明申请

WO2019215436A1 AN ELECTRICAL ELEMENT COMPRISING A MULTILAYER THIN FILM CERAMIC MEMBER, AN ELECTRICAL COMPONENT COMPRISING THE SAME, AND USES THEREOF 审中-公开
公开(公告)号：WO2019215436A1
公开(公告)日：2019-11-14
申请号：PCT/GB2019/051255
申请日：2019-05-07
申请人： XAAR TECHNOLOGY LIMITED , MARDILOVICH, Peter , KO, Song Won , TROLIER-MCKINSTRY, Susan , FRAGKIADAKIS, Charalampos , ZHU, Wanlin
发明人： MARDILOVICH, Peter , KO, Song Won , TROLIER-MCKINSTRY, Susan , FRAGKIADAKIS, Charalampos , ZHU, Wanlin
IPC分类号： H01L41/187
摘要： The present invention relates to an electrical element comprising a multilayer thin film ceramic member which is a dielectric exhibiting piezoelectric/electrostrictive properties which make it suitable for use in microelectromechanical systems. In one aspect, the present invention provides an electrical element for use in microelectromechanical systems comprising: i) a thin film ceramic member formed of a plurality of layers of ceramic material having a major proportion of a perovskite (ABX 3 ) phase, said thin film ceramic member having a first side and an opposing second side spaced apart in a thickness direction; ii) first and second electrodes disposed adjacent to the thin film ceramic member, wherein, relative to each other, one of the first or second electrodes is a higher potential electrode and the other one of the first and second electrodes is a lower potential electrode, such that a potential difference may be established between the first and second electrodes and through the thin film ceramic member during operation; wherein the thin film ceramic member comprises: a first layer of ceramic material doped with: I) one or more transition metal ions capable of Jahn-Teller distortion of the perovskite crystal structure of the ceramic material and/or II) one or more non-transition metal ions which have a lower oxidation state and/or one or more transition metal ions which preferentially undergo reduction, compared to the B-site cation of the perovskite crystal structure of the ceramic material; and a second layer of ceramic material not doped with any of the one or more metal ions as defined for the first layer of ceramic material; and wherein said first layer of ceramic material is located, over the thickness of the thin film ceramic member, so as to be: a) in contact with both of the first and second electrodes, wherein the first and second electrodes are both disposed adjacent to one of the first or second sides of the thin film ceramic member; or b) in contact with the one of the first or second electrodes which is the lower potential electrode, wherein first and second electrodes are interposed by the thin film ceramic member.

3. 发明申请

WO2019141961A1 A METHOD FOR FABRICATING A LEAD-FREE THIN FILM ELEMENT AND USES THEREOF 审中-公开
公开(公告)号：WO2019141961A1
公开(公告)日：2019-07-25
申请号：PCT/GB2018/053699
申请日：2018-12-19
申请人： XAAR TECHNOLOGY LIMITED , GIBBONS, Brady , GROVE, Kyle , CANN, David , KO, Song-Won
发明人： GIBBONS, Brady , GROVE, Kyle , CANN, David , KO, Song-Won
IPC分类号： H01L41/318 , C23C18/12
CPC分类号： H01L41/318 , C23C18/1295
摘要： The present invention relates to a method of preparing a thin film element which is a dielectric exhibiting piezoelectric properties comprising a bismuth-based solid solution ceramic material as well as uses thereof. In one aspect, the present inventions provides a method for fabricating a lead-free piezoelectric thin film element comprising a substrate and a piezoelectric thin film formed thereon, wherein said piezoelectric thin film is a solid solution ceramic material having a major proportion of a perovskite phase and having the formula (I) below : (I): xA-yB-z 1 C 1 -z 2 C 2 wherein A is a first bismuth based perovskite component; B is a second bismuth based perovskite component; C 1 and C 2 are dopant perovskite components; and wherein: x+y+z 1 +z 2 = 1; x, y≠ 0; (z 1 + z 2 ) ≥ 0; said method comprising: performing steps i) and ii) below one or more times: i) depositing a precursor solution for the ceramic material of formula (I) on to the substrate by chemical solution deposition to form a deposited precursor solution on the substrate; ii) drying and pyrolysing the deposited precursor solution to form a coating; followed by performing step iii) below: iii) crystallising the coating by rapid thermal processing to form a film of the solid solution ceramic material of formula (I); wherein crystallising in step iii) involves heating the coating to a crystallisation temperature of from 600 °C to 800 °C; and wherein the temperature is increased at a ramp rate of from 70 to 150 °C/s up to the crystallisation temperature.

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