基本信息:
- 专利标题： TUNING VIA FACET WITH MINIMAL RIE LAG
- 专利标题（中）：用最小的RIE LAG调整VIA面
- 申请号：PCT/US2008/075841 申请日：2008-09-10
- 公开(公告)号：WO2009036053A2 公开(公告)日：2009-03-19
- 发明人： SIRARD, Stephen , NAGAI, Mikio , TAKESHITA, Kenji , SRIVATSAN, Sridharan , KO, Jungmin
- 申请人： LAM RESEARCH CORPORATION , SIRARD, Stephen , NAGAI, Mikio , TAKESHITA, Kenji , SRIVATSAN, Sridharan , KO, Jungmin
- 申请人地址： 4650 Cushing Parkway Fremont, California 94538 US
- 专利权人： LAM RESEARCH CORPORATION,SIRARD, Stephen,NAGAI, Mikio,TAKESHITA, Kenji,SRIVATSAN, Sridharan,KO, Jungmin
- 当前专利权人： LAM RESEARCH CORPORATION,SIRARD, Stephen,NAGAI, Mikio,TAKESHITA, Kenji,SRIVATSAN, Sridharan,KO, Jungmin
- 当前专利权人地址： 4650 Cushing Parkway Fremont, California 94538 US
- 代理机构： LEE, Michael, B. K. et al.
- 优先权： US11/854,038 20070912
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065
摘要：
A method for designing an etch recipe is provided. An etch is performed, comprising providing an etch gas with a set halogen to carbon ratio, forming a plasma from the etch gas, and etching trenches over via. Via faceting is measured. The halogen to carbon ratio is reset according to the measured via faceting, where the halogen to carbon ratio is increased if too much faceting is measured and the halogen to carbon ratio is decreased if too little faceting is measured. The previous steps are repeated until a desired amount of faceting is obtained.
摘要（中）：
提供了一种用于设计蚀刻配方的方法。 执行蚀刻，包括提供具有设定的卤素碳比的蚀刻气体，由蚀刻气体形成等离子体，并且蚀刻通孔上的沟槽。 测量通过刻面。 根据所测量的通孔刻面重置卤素与碳的比例，其中如果测量了太多的刻面并且如果测量的刻面太小则卤素与碳的比率降低，则卤素与碳的比例增加。 重复前面的步骤，直到获得所需量的刻面。
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/26 | ....用波或粒子辐射轰击的 |
| ----------------H01L21/302 | .....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割 |
| ------------------H01L21/306 | ......化学或电处理，例如电解腐蚀 |
| --------------------H01L21/3065 | .......等离子腐蚀；活性离子腐蚀 |