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1. 发明申请

WO2012106223A2 PRE-CUT WAFER APPLIED UNDERFILL FILM ON DICING TAPE 审中-公开
标题翻译：预切片应用于贴片胶片上
公开(公告)号：WO2012106223A2
公开(公告)日：2012-08-09
申请号：PCT/US2012/023068
申请日：2012-01-30
申请人： HENKEL CORPORATION , HOANG, Gina , KIM, YounSang , GUINO, Rose
发明人： HOANG, Gina , KIM, YounSang , GUINO, Rose
IPC分类号： H01L21/50
CPC分类号： H01L21/02002 , H01L21/561 , H01L21/563 , H01L21/6836 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/81 , H01L24/92 , H01L24/94 , H01L2221/68327 , H01L2221/6834 , H01L2221/68377 , H01L2224/16227 , H01L2224/27002 , H01L2224/27003 , H01L2224/27436 , H01L2224/2919 , H01L2224/29191 , H01L2224/73104 , H01L2224/81815 , H01L2224/9212 , H01L2224/94 , H01L2924/351 , H01L2224/11 , H01L2224/27 , H01L2924/00014 , H01L2924/0665 , H01L2924/0635 , H01L2924/00012 , H01L21/304 , H01L2221/68368 , H01L21/78 , H01L2221/68381
摘要： A method for preparing a semiconductor with preapplied underfill comprises (a) providing a thinned silicon semiconductor wafer having a plurality of metallic bumps on its active face and, optionally, through-silica-vias vertically through the silicon semiconductor wafer; (b) providing an underfill material on a dicing support tape, in which the underfill material is precut to the shape of the semiconductor wafer; (c) aligning the underfill material on the dicing support tape with the semiconductor wafer and laminating the underfill material to the semiconductor wafer.
摘要翻译：用于制备具有预先施加的底部填充物的半导体的方法包括：（a）在其有源面上提供具有多个金属凸块的薄化硅半导体晶片，以及可选地通过二氧化硅通孔穿过硅半导体晶片; （b）在切割支撑带上提供底部填充材料，其中底部填充材料预先切割成半导体晶片的形状; （c）将切割支撑带上的底部填充材料与半导体晶片对准，并将底部填充材料层压到半导体晶片。

2. 发明申请

WO2013019499A2 DICING BEFORE GRINDING AFTER COATING 审中-公开
标题翻译：涂装后研磨之前
公开(公告)号：WO2013019499A2
公开(公告)日：2013-02-07
申请号：PCT/US2012/048111
申请日：2012-07-25
申请人： HENKEL CORPORATION , HOANG, Gina , KIM, YounSang , GUINO, Rosette , HUANG, Qiaohong
发明人： HOANG, Gina , KIM, YounSang , GUINO, Rosette , HUANG, Qiaohong
IPC分类号： H01L21/56
CPC分类号： H01L21/78 , H01L21/563 , H01L21/568 , H01L21/6836 , H01L2221/68327 , H01L2224/131 , H01L2224/27436 , H01L2224/73104 , H01L2224/94 , H01L2224/27 , H01L2924/00012 , H01L2924/00014
摘要： This invention is a method for singulating a semiconductor wafer into individual semiconductor dies, the top surface of the semiconductor wafer bumped with metallic pre- connections and having a coating of underfill disposed over and around the metallic pre- connection bumps. The method comprises (A) providing a semiconductor wafer having a top surface with an array of metallic pre-connection bumps and a coating of underfill disposed over and around the metallic pre-connection bumps; (B) dicing through the underfill between the metallic pre-connection bumps and into the top surface of the semiconductor wafer to the ultimate desired wafer thickness, creating dicing lines; and (C) removing wafer material from the backside of the wafer at least to the depth of the dicing lines, thus singulating the resulting dies from the wafer.
摘要翻译：本发明是用于将半导体晶片分离成单独的半导体管芯的方法，半导体晶片的顶表面用金属预连接件凸起并且具有设置在金属预连接凸块上方和周围的底部填充涂层。该方法包括（A）提供具有顶表面的半导体晶片，其具有金属预连接凸块阵列和设置在金属预连接凸块上方和周围的底部填料涂层; （B）通过金属预连接凸块之间的底部填充物切割并进入半导体晶片的顶表面到最终期望的晶片厚度，形成切割线; 和（C）至少从切割线的深度移除晶片背面的晶片材料，从而将晶片从晶片上分离出来。

3. 发明申请

WO2012106223A3 PRE-CUT WAFER APPLIED UNDERFILL FILM ON DICING TAPE 审中-公开
标题翻译：预切片应用于贴片胶片上
公开(公告)号：WO2012106223A3
公开(公告)日：2013-01-24
申请号：PCT/US2012023068
申请日：2012-01-30
申请人： HENKEL CORP , HOANG GINA , KIM YOUNSANG , GUINO ROSE
发明人： HOANG GINA , KIM YOUNSANG , GUINO ROSE
IPC分类号： H01L21/50
CPC分类号： H01L21/02002 , H01L21/561 , H01L21/563 , H01L21/6836 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/81 , H01L24/92 , H01L24/94 , H01L2221/68327 , H01L2221/6834 , H01L2221/68377 , H01L2224/16227 , H01L2224/27002 , H01L2224/27003 , H01L2224/27436 , H01L2224/2919 , H01L2224/29191 , H01L2224/73104 , H01L2224/81815 , H01L2224/9212 , H01L2224/94 , H01L2924/351 , H01L2224/11 , H01L2224/27 , H01L2924/00014 , H01L2924/0665 , H01L2924/0635 , H01L2924/00012 , H01L21/304 , H01L2221/68368 , H01L21/78 , H01L2221/68381
摘要： A method for preparing a semiconductor with preapplied underfill comprises (a) providing a thinned silicon semiconductor wafer having a plurality of metallic bumps on its active face and, optionally, through-silica-vias vertically through the silicon semiconductor wafer; (b) providing an underfill material on a dicing support tape, in which the underfill material is precut to the shape of the semiconductor wafer; (c) aligning the underfill material on the dicing support tape with the semiconductor wafer and laminating the underfill material to the semiconductor wafer.
摘要翻译：一种用于制备具有预先施加的底部填充物的半导体的方法包括：（a）提供在其有源面上具有多个金属凸块的薄化硅半导体晶片，以及可选地通过二氧化硅通孔穿过硅半导体晶片; （b）在切割支撑带上提供底部填充材料，其中底部填充材料预切成半导体晶片的形状; （c）将切割支撑带上的底部填充材料与半导体晶片对准，并将底部填充材料层压到半导体晶片。

4. 发明申请

WO2011156228A3 COATING ADHESIVES ONTO DICING BEFORE GRINDING AND MICRO-FABRICATED WAFERS 审中-公开
标题翻译：磨砂前和胶合后的涂层粘合剂
公开(公告)号：WO2011156228A3
公开(公告)日：2012-08-02
申请号：PCT/US2011039070
申请日：2011-06-03
申请人： HENKEL CORP , YUN HWANG KYU , LEON JEFFREY , PEDDI RAJ , KIM YOUNSANG
发明人： YUN HWANG KYU , LEON JEFFREY , PEDDI RAJ , KIM YOUNSANG
IPC分类号： H01L21/78 , H01L21/301
CPC分类号： H01L21/78 , H01L21/67132 , H01L21/6836 , H01L21/784 , H01L21/822
摘要： A method for preparing a semiconductor wafer into individual semiconductor dies uses both a dicing before grinding step and/or via hole micro-fabrication step, and an adhesive coating step.
摘要翻译：将半导体晶片制备成单个半导体管芯的方法使用在研磨步骤和/或通孔微加工步骤之间的切割和粘合剂涂布步骤。

5. 发明申请

WO2013019499A3 DICING BEFORE GRINDING AFTER COATING 审中-公开
标题翻译：涂装后研磨之前
公开(公告)号：WO2013019499A3
公开(公告)日：2013-03-28
申请号：PCT/US2012048111
申请日：2012-07-25
申请人： HENKEL CORP , HOANG GINA , KIM YOUNSANG , GUINO ROSETTE , HUANG QIAOHONG
发明人： HOANG GINA , KIM YOUNSANG , GUINO ROSETTE , HUANG QIAOHONG
IPC分类号： H01L21/56
CPC分类号： H01L21/78 , H01L21/563 , H01L21/568 , H01L21/6836 , H01L2221/68327 , H01L2224/131 , H01L2224/27436 , H01L2224/73104 , H01L2224/94 , H01L2224/27 , H01L2924/00012 , H01L2924/00014
摘要： This invention is a method for singulating a semiconductor wafer into individual semiconductor dies, the top surface of the semiconductor wafer bumped with metallic pre-connections and having a coating of underfill disposed over and around the metallic pre- connection bumps. The method comprises (A) providing a semiconductor wafer having a top surface with an array of metallic pre-connection bumps and a coating of underfill disposed over and around the metallic pre-connection bumps; (B) dicing through the underfill between the metallic pre-connection bumps and into the top surface of the semiconductor wafer to the ultimate desired wafer thickness, creating dicing lines; and (C) removing wafer material from the backside of the wafer at least to the depth of the dicing lines, thus singulating the resulting dies from the wafer.
摘要翻译：本发明是用于将半导体晶片分离成单独的半导体管芯的方法，半导体晶片的顶表面用金属预连接件凸起并且具有设置在金属预连接凸块上方和周围的底部填充涂层。该方法包括（A）提供具有顶表面的半导体晶片，其具有金属预连接凸块阵列和设置在金属预连接凸块上方和周围的底部填料涂层; （B）通过金属预连接凸块之间的底部填充物切割并进入半导体晶片的顶表面到最终期望的晶片厚度，形成切割线; 和（C）至少从切割线的深度移除晶片背面的晶片材料，从而将晶片从晶片上分离出来。

6. 发明申请

WO2012134105A3 ZINC OXIDE THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：氧化锌薄膜晶体管及其制造方法
公开(公告)号：WO2012134105A3
公开(公告)日：2013-01-03
申请号：PCT/KR2012002088
申请日：2012-03-22
申请人： SNU R&DB FOUNDATION , KIM YOUNSANG , PARK SIYUN , KIM KYONGJUN
发明人： KIM YOUNSANG , PARK SIYUN , KIM KYONGJUN
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L27/1292 , H01L29/66969 , H01L29/78693
摘要： A manufacturing method of an n-type zinc oxide thin film is provided and comprises the steps of: forming a zinc amine complex by reacting zinc oxide with ammonia; forming a zinc hydroxide solution by mixing the zinc amine complex with an alkali metal or oxide of an alkaline earth metal in a polar solvent; forming a semiconductor film by applying the solution on a substrate; forming a zinc oxide film which is doped with the alkali metal or the alkaline earth metal by heating the semiconductor film.
摘要翻译：提供了一种n型氧化锌薄膜的制造方法，包括以下步骤：通过使氧化锌与氨反应形成锌胺络合物; 通过在极性溶剂中将锌胺络合物与碱金属或碱土金属的氧化物混合来形成氢氧化锌溶液; 通过将溶液施加在基板上形成半导体膜; 通过加热半导体膜形成掺杂有碱金属或碱土金属的氧化锌膜。

7. 发明申请

WO2012106191A3 PRE- CUT WAFER APPLIED UNDERFILL FILM 审中-公开
标题翻译：预切割晶圆应用底部填充膜
公开(公告)号：WO2012106191A3
公开(公告)日：2012-11-08
申请号：PCT/US2012022853
申请日：2012-01-27
申请人： HENKEL CORP , KIM YOUNSANG , HOANG GINA , GUINO ROSE
发明人： KIM YOUNSANG , HOANG GINA , GUINO ROSE
IPC分类号： H01L21/50
CPC分类号： H01L21/02227 , H01L21/563 , H01L21/6836 , H01L23/481 , H01L2221/68327 , H01L2221/6834 , H01L2221/68377 , H01L2224/73104 , H01L2224/83191
摘要： A method for preparing a semiconductor with preapplied underfill comprises providing a semiconductor wafer with a plurality of metallic bumps on its top side and, optionally, through- silica- vias vertically through the silicon wafer; laminating a back grinding tape to the top of the wafer covering the metallic bumps and through silicon vias; thinning the back side of the wafer; mounting a dicing tape to the back side of the thinned wafer and mounting the silicon wafer and dicing tape to a dicing frame; removing the back grinding tape; providing an underfill material precut into the shape of the wafer; aligning the underfill on with the wafer and laminating the underfill to the wafer.
摘要翻译：一种制备具有预涂底部填充物的半导体的方法，包括：提供半导体晶片，在其顶侧上具有多个金属凸块，并且可选地提供垂直穿过硅晶片的贯穿硅通孔; 将背面研磨带层压到覆盖金属凸块和硅通孔的晶片的顶部; 使晶片的背面变薄; 将切割带安装到减薄晶片的背面，并将硅晶片和切割带安装到切割框架; 去除背面研磨胶带; 提供预先成形为晶片形状的底部填充材料; 将底部填充物与晶片对准并将底部填充物层压到晶片上。

8. 发明申请

WO2015127179A1 THERMALLY CONDUCTIVE PRE-APPLIED UNDERFILL FORMULATIONS AND USES THEREOF 审中-公开
标题翻译：导热的预应力配方及其用途
公开(公告)号：WO2015127179A1
公开(公告)日：2015-08-27
申请号：PCT/US2015/016779
申请日：2015-02-20
申请人： HENKEL IP & HOLDING GMBH , BAI, Jie , DO, Ly , CHAU, Hung , KIM, Younsang , ECKENRODE, Julissa
发明人： BAI, Jie , DO, Ly , CHAU, Hung , KIM, Younsang , ECKENRODE, Julissa
IPC分类号： C09J5/00 , C09J7/02 , C09J9/00 , C09J11/04 , C09J133/08 , C09J163/00 , C09J175/04 , C09J179/08 , C09J183/04 , C01B35/14 , C01F7/02 , H01L23/373
CPC分类号： C09J9/00 , C08G59/5073 , C08K3/22 , C08K3/36 , C08K3/38 , C08K5/14 , C08K2003/2227 , C08K2003/385 , C08L33/00 , C08L63/00 , C08L75/04 , C08L79/08 , C09J5/00 , C09J11/04 , C09J179/085 , C09J183/04 , C09J2433/00 , C09J2463/00 , C09J2479/00 , C09K5/14 , H01L23/293 , H01L23/3737 , H01L2924/0002 , H01L2924/00
摘要： Provided herein are thermally conductive underfill compositions which have a combination of melt viscosity, glass transition temperature (Tg), coefficient of thermal expansion, and/or transparency that renders such materials useful for the preparation of a variety of electronic devices, such as flip chip packages, stacked dies, hybrid memory cubes, through-silica via (TSV) devices, and the like. In certain embodiments of the invention, there are provided assemblies comprising a first article permanently adhered to a second article by a cured aliquot of a formulation as described herein. In certain embodiments of the invention, there are provided methods for adhesively attaching a first article to a second article. In certain embodiments of the present invention, there are provided methods for improving heat dissipation by electronic devices assembled employing thermally conductive, but electrically non-conductive adhesive.
摘要翻译：本文提供了具有熔体粘度，玻璃化转变温度（Tg），热膨胀系数和/或透明度的组合的导热底层填料组合物，其使得这些材料可用于制备各种电子器件，例如倒装芯片封装，堆叠管芯，混合存储器立方体，通过二氧化硅通孔（TSV）器件等。在本发明的某些实施方案中，提供了包含通过如本文所述的制剂的固化等分试样永久粘附到第二制品的第一制品的组合件。在本发明的某些实施方案中，提供了将第一制品粘附到第二制品上的方法。在本发明的某些实施例中，提供了通过使用导热但非导电粘合剂组装的电子设备来改善散热的方法。

9. 发明申请

WO2012135243A1 PRE-GROOVING FOR WAFER APPLIED UNDERFILL FILM 审中-公开
标题翻译：用于适用于未完成的膜的预浸料
公开(公告)号：WO2012135243A1
公开(公告)日：2012-10-04
申请号：PCT/US2012/030783
申请日：2012-03-28
申请人： HENKEL CORPORATION , KIM, YounSang , HOANG, Gina , GUINO, Rose
发明人： KIM, YounSang , HOANG, Gina , GUINO, Rose
IPC分类号： H01L21/78 , H01L21/301
CPC分类号： H01L21/78
摘要： A method for preparing a silicon wafer into individual semiconductor dies, in which the silicon wafer has preapplied underfill disposed over its active circuitry, comprises (a) providing a silicon wafer with active circuitry on one face; (b) making grooves between the active circuitry in those locations on the wafer face surface where later dicing into individual semiconductor dies will occur; (c) applying an underfill encapsulant over the active circuitry and grooves on the silicon wafer face; and (d) cutting into and through the underfill encapsulant, the grooves in the active circuitry, and the silicon wafer, to separate the wafer into individual semiconductor dies.
摘要翻译：一种用于将硅晶片制备成单个半导体管芯的方法，其中硅晶片预先施加在其有源电路上设置的底部填充物包括（a）在一个面上提供具有有源电路的硅晶片; （b）在晶片表面上的那些位置中的有源电路之间形成凹槽，随后将切割成单独的半导体管芯; （c）将底部填充密封剂施加在硅晶片表面上的有源电路和沟槽上; 和（d）切入并穿过底部填充密封剂，有源电路中的凹槽和硅晶片，以将晶片分离成单独的半导体管芯。

10. 发明申请

WO2012106191A2 PRE- CUT WAFER APPLIED UNDERFILL FILM 审中-公开
标题翻译：预浸膜应用于底片
公开(公告)号：WO2012106191A2
公开(公告)日：2012-08-09
申请号：PCT/US2012/022853
申请日：2012-01-27
申请人： HENKEL CORPORATION , KIM, Younsang , HOANG, Gina , GUINO, Rose
发明人： KIM, Younsang , HOANG, Gina , GUINO, Rose
IPC分类号： H01L21/50
CPC分类号： H01L21/02227 , H01L21/563 , H01L21/6836 , H01L23/481 , H01L2221/68327 , H01L2221/6834 , H01L2221/68377 , H01L2224/73104 , H01L2224/83191
摘要： A method for preparing a semiconductor with preapplied underfill comprises providing a semiconductor wafer with a plurality of metallic bumps on its top side and, optionally, through- silica- vias vertically through the silicon wafer; laminating a back grinding tape to the top of the wafer covering the metallic bumps and through silicon vias; thinning the back side of the wafer; mounting a dicing tape to the back side of the thinned wafer and mounting the silicon wafer and dicing tape to a dicing frame; removing the back grinding tape; providing an underfill material precut into the shape of the wafer; aligning the underfill on with the wafer and laminating the underfill to the wafer.
摘要翻译：制备具有预先施加的底部填充物的半导体的方法包括在其顶侧提供具有多个金属凸块的半导体晶片，以及任选地穿过硅晶片的二氧化硅通孔; 将背磨带层压到覆盖金属凸块并通过硅通孔的晶片顶部; 使晶片的背面变薄; 将切割胶带安装到薄化晶片的背面，并将硅晶片和切割胶带安装到切割架上; 取下背磨带; 提供底部填充材料预切成晶片的形状; 将底部填充物与晶片对准并将底部填充物层压到晶片。

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