专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO1984000821A1 ULTRASONIC WAVE GENERATOR 审中-公开
标题翻译：超声波发生器
公开(公告)号：WO1984000821A1
公开(公告)日：1984-03-01
申请号：PCT/JP1983000271
申请日：1983-08-18
申请人： WEST ELECTRIC CO., LTD. , IWATA, Hiroshi
发明人： WEST ELECTRIC CO., LTD.
IPC分类号： G02B07/11
CPC分类号： G03B3/10
摘要： This ultrasonic wave generator is particularly adapted for an ultrasonic automatic focusing device. The generator comprises a light-transmissive ultrasonic vibrator (2) of which at least at one layer is formed of a light-transmissive ceramic, fixing means (12), (6'), (6) for attaching the vibrator (2) to the front surface of a photographic lens (1), (1') such as that of a photographic camera, a video camera, or the like, and control means for controlling the supply of energy to the vibrator (2). A camera device which includes an ultrasonic automatic focusing unit can be very simply constructed by employing this ultrasonic wave generator with the vibrator (2) on the front surface of the lens (1), (1') in the automatic focusing unit of the photographic lens of a photographic camera, a video camera or the like.
摘要翻译：该超声波发生器特别适用于超声波自动聚焦装置。该发生器包括至少在一层由透光陶瓷形成的透光超声波振动器（2），用于将振动器（2）连接到的固定装置（12），（6'），（6）照相镜头（1），（1'）的前表面，诸如照相机，摄像机等的前表面，以及用于控制向振动器（2）供应能量的控制装置。包括超声波自动聚焦单元的相机装置可以非常简单地通过在摄影的自动聚焦单元中将透镜（1）的前表面上的振动器（2），（1'）采用该超声波发生器照相机的镜头，摄像机等。

2. 发明申请

WO2008060455A3 METHODS FOR NANOWIRE ALIGNMENT AND DEPOSITION 审中-公开
标题翻译：纳米线对准和沉积方法
公开(公告)号：WO2008060455A3
公开(公告)日：2008-11-20
申请号：PCT/US2007023625
申请日：2007-11-09
申请人： NANOSYS INC , SHARP KK , MARTIN SAMUEL , DUAN XIANGFENG , FUJII KATSUMASA , HAMILTON JAMES M , IWATA HIROSHI , LEON FRANCISCO , MILLER JEFFREY , NEGISHI TETSU , OHKI HIROSHI , PARCE J WALLACE , PEREIRA CHERI X Y , SCHUELE PAUL JOHN , SHIBATA AKIHIDE , STUMBO DAVID P , OKADA YASUNOBU
发明人： MARTIN SAMUEL , DUAN XIANGFENG , FUJII KATSUMASA , HAMILTON JAMES M , IWATA HIROSHI , LEON FRANCISCO , MILLER JEFFREY , NEGISHI TETSU , OHKI HIROSHI , PARCE J WALLACE , PEREIRA CHERI X Y , SCHUELE PAUL JOHN , SHIBATA AKIHIDE , STUMBO DAVID P , OKADA YASUNOBU
IPC分类号： H01L21/00 , B82B3/00
CPC分类号： H01L29/0665 , B82B3/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L29/0673 , Y10S977/883
摘要： The present invention provides methods and systems for nanowire alignment and deposition. Energizing (e.g., an alternating current electric field) is used to align and associate nanowires with electrodes. By modulating the energizing, the nanowires are coupled to the electrodes such that they remain in place during subsequent wash and drying steps. The invention also provides methods for transferring nanowires from one substrate to another in order to prepare various device substrates. The present invention also provides methods for monitoring and controlling the number of nanowires deposited at a particular electrode pair, as well as methods for manipulating nanowires in solution.
摘要翻译：本发明提供用于纳米线对准和沉积的方法和系统。通电（例如，交流电场）用于将纳米线与电极对齐和关联。通过调节激励，纳米线连接到电极，使得它们在随后的洗涤和干燥步骤中保持在原位。本发明还提供了用于将纳米线从一个衬底转移到另一衬底以制备各种器件衬底的方法。本发明还提供了用于监测和控制沉积在特定电极对处的纳米线数量的方法，以及用于在溶液中操纵纳米线的方法。

3. 发明申请

WO1995021463A1 PIEZOELECTRIC TRANSFORMER 审中-公开
标题翻译：压电变压器
公开(公告)号：WO1995021463A1
公开(公告)日：1995-08-10
申请号：PCT/JP1995000151
申请日：1995-02-06
申请人： WEST ELECTRIC CO., LTD. , TOKUSHIMA, Akira , IWATA, Hiroshi
发明人： WEST ELECTRIC CO., LTD.
IPC分类号： H01L41/08
CPC分类号： H01L41/107
摘要： A piezoelectric transformer which can produce a high-voltage and large-current and has a low output impedance. Deterioration of the characteristics and breakage due to heat do not easily occur even when its thickness is an thin as 2.5 mm. The transformer is a rectangular plate having a thickness of 0.5-2.5 mm and made of a piezoelectric ceramic provided with a thickness-direction polarized section which is formed by polarizing part of the rectangular plate in the thickness direction and functions as an input section and a length-direction polarized section which is formed by polarizing the other part of the rectangular plate in the length direction and functions as an output section. The ratio of the length to the width of the rectangular plate is 0.2-0.6 so that the secondary resonance frequency generated when the transformer oscillates in the length direction while the output section is open is almost equal to the primary resonance frequency generated when the transformer oscillates in the width direction.
摘要翻译：一种可产生高电压和大电流且具有低输出阻抗的压电变压器。即使当其厚度薄到2.5mm时，由于热量而导致的特性劣化和断裂也不易发生。变压器是厚度为0.5-2.5mm的矩形板，由压电陶瓷制成，该压电陶瓷设置有厚度方向偏振部分，该厚度方向极化部分是沿厚度方向偏振矩形板的一部分而形成的，并用作输入部分和长方向极化部，其通过使矩形板的另一部分在长度方向偏振而形成，用作输出部。矩形板的长度与宽度之比为0.2-0.6，使变压器在长度方向上振荡而产生的二次谐振频率与输出部分断开时几乎相等。在宽度方向。

4. 发明申请

WO2017217273A1 ACTIVE-ENERGY-RAY-CURABLE LIQUID COMPOSITION, THREE-DIMENSIONAL OBJECT FORMING MATERIAL SET, METHOD FOR PRODUCING THREE-DIMENSIONAL OBJECT, AND THREE-DIMENSIONAL OBJECT PRODUCING APPARATUS 审中-公开
标题翻译：活性能量射线固化液体组合物，三维物体成形材料组件，三维物体生产方法和三维物体生产设备
公开(公告)号：WO2017217273A1
公开(公告)日：2017-12-21
申请号：PCT/JP2017/020866
申请日：2017-06-05
申请人： RICOH COMPANY, LTD. , NAITO, Hiroyuki , IWATA, Hiroshi , NORIKANE, Yoshihiro , SHIMADA, Yoshihito , SUGIURA, Kenji
发明人： NAITO, Hiroyuki , IWATA, Hiroshi , NORIKANE, Yoshihiro , SHIMADA, Yoshihito , SUGIURA, Kenji
IPC分类号： C09D11/101 , C09D11/30
摘要： Provided is an active-energy-ray-curable liquid composition containing a monomer (A) having a hydrogen-bonding capacity and a solvent (B) having a hydrogen-bonding capacity, wherein the active-energy-ray-curable liquid composition satisfies conditions below, a cured product obtained by irradiating the active-energy-ray-curable liquid composition with 500 mJ/cm 2 of an active energy ray is a solid having a compressive stress of 2.0 kPa or greater when compressed by 1% at 25 degrees C, and the cured product has a water decaying property.
摘要翻译：提供包含具有氢键合能力的单体（A）和具有氢键合能力的溶剂（B）的活性能量射线固化性液体组合物，其中活性能量射线固化性液体组合物 X-射线固化液体组合物满足以下条件，＆lt;条件＆gt; 通过用500mJ / cm 2的活性能量射线照射活性能量射线固化型液体组合物而得到的固化物为压缩1时的压缩应力为2.0kPa以上的固体％在25摄氏度，并且固化产品具有水腐败性能。

5. 发明申请

WO1998025307A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：WO1998025307A1
公开(公告)日：1998-06-11
申请号：PCT/JP1997004344
申请日：1997-11-27
申请人： SHARP KABUSHIKI KAISHA , IWATA, Hiroshi , KAKIMOTO, Seizou , NAKANO, Masayuki , MATSUOKA, Toshimasa
发明人： SHARP KABUSHIKI KAISHA
IPC分类号： H01L27/08
CPC分类号： H01L29/1087 , H01L27/092 , H01L29/7832
摘要： A semiconductor device which materializes dynamic threshold operation, on the assumption of the application of a bulk semiconductor substrate. The semiconductor substrate has a first conductivity type well region (11), a source region (12) and a drain region (13) of second conductivity type are made in the vicinity of the surface of the first conductivity type of well region (11), a channel region (14) is provided between these regions (12 and 13), a gate insulating film (15) and a gate electrode (16) are stacked in order on the channel region (14), and the gate electrode (16) is connected to the well region (11) through the contact hole (not shown in the figure) of the gate insulating film (15). In this transistor, as compared with a conventional SOI substrate, the resistance of the well region (11) can be lowered to about one-tenth.
摘要翻译：在假设应用体半导体衬底的情况下实现动态阈值操作的半导体器件。半导体衬底具有第一导电类型阱区（11），在第一导电类型的阱区（11）的表面附近形成第二导电类型的源区（12）和漏区（13）在这些区域（12,13）之间设置沟道区域（14），栅极绝缘膜（15）和栅极电极（16）依次层叠在沟道区域（14）上，栅电极（16））通过栅极绝缘膜（15）的接触孔（图中未示出）连接到阱区（11）。在该晶体管中，与传统的SOI衬底相比，阱区（11）的电阻可以降低到约十分之一。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式