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1. 发明申请

WO2011031396A2 NEAR-INFRARED ABSORBING FILM COMPOSITIONS 审中-公开
标题翻译：近红外吸收膜组合物
公开(公告)号：WO2011031396A2
公开(公告)日：2011-03-17
申请号：PCT/US2010/044630
申请日：2010-08-06
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , GOLDFARB, Dario, L. , GLODDE, Martin , HUANG, Wu-song, S. , LIU, Sen , VYKLICKY, Libor , LI, Wai-kin
发明人： GOLDFARB, Dario, L. , GLODDE, Martin , HUANG, Wu-song, S. , LIU, Sen , VYKLICKY, Libor , LI, Wai-kin
IPC分类号： C09D5/32 , H01L21/02 , G03F7/20
CPC分类号： G03F7/0388 , G03F7/038 , G03F7/091 , G03F7/11 , H01L51/447
摘要： A curable liquid formulation comprising: (i) one or more near-infrared absorbing polymethine dyes; (ii) one or more crosslinkable polymers; and (iii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.
摘要翻译：一种可固化液体制剂，其包含：（i）一种或多种近红外吸收聚甲炔染料; （ii）一种或多种可交联聚合物; 和（iii）一种或多种浇铸溶剂。本发明还涉及由可交联形式的可固化液体制剂组成的固体近红外吸收膜。本发明还涉及一种含有固体近红外吸收膜涂层的微电子基片，以及一种在近红外吸收膜位于微电子基片之间的情况下对涂覆在微电子基片上的光致抗蚀剂层进行构图的方法和光刻胶膜。

2. 发明申请

WO2010111345A1 SELF-FORMING TOP ANTI-REFLECTIVE COATING COMPOSITIONS AND, PHOTORESIST MIXTURES AND METHOD OF IMAGING USING SAME 审中-公开
标题翻译：自形成顶部防反射涂料组合物和光刻胶混合物及其成像方法
公开(公告)号：WO2010111345A1
公开(公告)日：2010-09-30
申请号：PCT/US2010/028430
申请日：2010-03-24
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , HUANG, Wu-Song , POPOVA, Irene , VARANASI, Pushkara, Rao , VYKLICKY, Libor
发明人： HUANG, Wu-Song , POPOVA, Irene , VARANASI, Pushkara, Rao , VYKLICKY, Libor
IPC分类号： C07C409/22 , G03C1/00
CPC分类号： C08F212/34 , C08F212/32 , C08F220/22 , C08F220/26 , C08F220/28 , G03F7/0046 , G03F7/0392 , G03F7/091
摘要： A composition of matter. The composition of matter includes a polymer having an ethylenic backbone and comprising a first monomer having an aromatic moiety, a second monomer having a base soluble moiety or an acid labile protected base soluble moiety, and a third monomer having a fluoroalkyl moiety. Also a photoresist formulation including the composition of matter and a method of imaging using the photoresist formulation including the composition of matter.
摘要翻译：物质的组成。物质的组成包括具有乙烯主链并包含具有芳族部分的第一单体，具有碱可溶部分的第二单体或酸不稳定保护基可溶部分的第一单体和具有氟代烷基部分的第三单体的聚合物。还包括包含物质组合物的光致抗蚀剂制剂和使用包含物质组成的光致抗蚀剂制剂的成像方法。

3. 发明申请

WO2009091704A3 AROMATIC FLUORINE-FREE PHOTOACID GENERATORS AND PHOTORESIST COMPOSITIONS CONTAINING THE SAME 审中-公开
公开(公告)号：WO2009091704A3
公开(公告)日：2009-07-23
申请号：PCT/US2009/030792
申请日：2009-01-13
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , LI, Wenjie , HUANG, Wu-song, S. , VARANASI, Pushkara, R. , LIU, Sen , POPOVA, Irene, Y.
发明人： LI, Wenjie , HUANG, Wu-song, S. , VARANASI, Pushkara, R. , LIU, Sen , POPOVA, Irene, Y.
IPC分类号： G03F7/004 , G03F7/26 , C07C317/14
摘要： Fluorine-free photoacid generators and photoresist compositions containing fluorine-free photoacid generators are enabled as alternatives to PFOS/PFAS photoacid generator-containing photoresists. The photoacid generators are characterized by the presence of a fluorine-free aromatic sulfonate anionic component having one or more electron withdrawing groups. The photoacid generators preferably contain a fluorine-free onium cationic component, more preferably a sulfonium cationic component. The photoresist compositions preferably contain an acid sensitive imaging polymer having a lactone functionality. The compositions are especially useful for forming material patterns using 193nm (ArF) imaging radiation.

4. 发明申请

WO2009087029A1 MULTIPLE EXPOSURE PHOTOLITHOGRAPHY METHODS AND PHOTORESIST COMPOSITIONS 审中-公开
标题翻译：多次曝光光刻方法和光刻胶组合物
公开(公告)号：WO2009087029A1
公开(公告)日：2009-07-16
申请号：PCT/EP2008/067736
申请日：2008-12-17
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED , HUANG, Wu-Song , LIU, Sen , CHEN, Kuang-Jung , KWONG, Ranee Wai-Ling
发明人： HUANG, Wu-Song , LIU, Sen , CHEN, Kuang-Jung , KWONG, Ranee Wai-Ling
IPC分类号： G03F7/004 , G03F7/039 , G03F7/20
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/095 , G03F7/20 , G03F7/2022 , G03F7/30 , G03F7/38 , G03F7/70466 , Y10S430/12
摘要： A method and a composition. The composition includes a polymer and a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation and a second amount of acid upon exposure to a second dose of radiation. The second amount of acid is greater than said first amount of acid. The second dose is greater than the first dose. The composition includes a photosensitive base generator capable of generating a first amount of base upon exposure to the first dose and a second amount of base upon exposure to the second dose, where the first amount of base is greater than the first amount of acid and the second amount of base is less than the second amount of acid. A method for exposing to radiation a film of a photoresist on a substrate is included.
摘要翻译：方法和组成。组合物包括聚合物和感光酸产生剂，其能够在暴露于第一剂量的辐射时产生第一量的酸，并且在暴露于第二剂量的辐射时能够产生第二量的酸。第二量的酸大于所述第一量的酸。第二剂量大于第一剂量。所述组合物包括能够在暴露于第一剂量时产生第一量碱的光敏碱产生剂，以及暴露于第二剂量时第二量的碱，其中第一量的碱大于第一量的酸，碱的第二量少于第二量的酸。包括用于在基板上暴露于光致抗蚀剂的膜的方法。

5. 发明申请

WO2006096221A1 LOW REFRACTIVE INDEX POLYMERS AS UNDERLAYERS FOR SILICON-CONTAINING PHOTORESISTS 审中-公开
标题翻译：低折射率聚合物作为含硅光电子器件的底层
公开(公告)号：WO2006096221A1
公开(公告)日：2006-09-14
申请号：PCT/US2005/043210
申请日：2005-11-30
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , HUANG, Wu-song , BURNS, Sean , KHOJASTEH, Mahmoud
发明人： HUANG, Wu-song , BURNS, Sean , KHOJASTEH, Mahmoud
IPC分类号： G03C1/76
CPC分类号： G03F7/094 , G03F7/091
摘要： A new underlayer composition that exhibits high etch resistance and improved optical properties is disclosed. The underlayer composition comprises a vinyl or acrylate polymer, such as a methacrylate polymer, the polymer comprising at least one substituted or unsubstituted naphthalene or naphthol moiety, including mixtures thereof. Examples of the polymer of this invention include: formula (I), (II), (III), (IV), where each R 1 is independently selected from an organic moiety or a halogen; each A is independently a single bond or an organic moietry; R 2 is hydrogen or a methyl group; and each X, Y and Z is an integer of 0 to 7, and Y+Z is / or less. The organic moiety mentioned above may be a substituted or unsubtituted hydrocarbon selected from the group consisting of a linear or branched alkyl, halogenated linear or branched alkyl, aryl, halogenated aryl, cyclic alkyl, and halogenated cyclic alkyl, and any combination thereof. The compositions are suitable for use as planarizing underlayer in a multilayer lithographic process, including a trilayer lothographic process.
摘要翻译：公开了具有高耐蚀刻性和改善的光学性能的新型底层组合物。底层组合物包含乙烯基或丙烯酸酯聚合物，例如甲基丙烯酸酯聚合物，该聚合物包含至少一个取代或未取代的萘或萘酚部分，包括其混合物。本发明的聚合物的实例包括：式（I），（II），（III），（IV），其中每个R 1独立地选自有机部分或卤素; 每个A独立地是单键或有机溶剂; R 2是氢或甲基; 并且每个X，Y和Z为0至7的整数，Y + Z为/或更小。上述有机部分可以是选自直链或支链烷基，卤代直链或支链烷基，芳基，卤代芳基，环状烷基和卤代环状烷基的取代或未取代的烃及其任何组合。该组合物适用于在多层平版印刷工艺中的平面化底层，包括三层薄膜工艺。

6. 发明申请

WO2013023124A3 DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITIONS FOR NEGATIVE RESISTS 审中-公开
标题翻译：可开发的底部抗反射涂层组合物
公开(公告)号：WO2013023124A3
公开(公告)日：2013-07-11
申请号：PCT/US2012050267
申请日：2012-08-10
申请人： IBM , CHEN KUANG-JUNG , HOLMES STEVEN J , HUANG WU-SONG , LIU SEN
发明人： CHEN KUANG-JUNG , HOLMES STEVEN J , HUANG WU-SONG , LIU SEN
IPC分类号： G03F7/004 , C09D133/04 , G03F7/039 , G03F7/09
CPC分类号： G03F7/0382 , C09J133/14 , G03F7/091 , G03F7/094 , G03F7/095
摘要： A negative developable bottom antireflective coating (NDBARC) material includes a polymer containing an aliphatic alcohol moiety, an aromatic moiety, and a carboxylic acid moiety. The NDBARC composition is insoluble in a typical resist solvent such as propylene glycol methyl ether acetate (PGMEA) after coating and baking. The NDBARC material also includes a photoacid generator, and optionally a crosslinking compound. In the NDBARC material, the carboxylic acid provides the developer solubility, while the alcohol alone, the carboxylic acid alone, or their combination provides the PGMEA resistance. The NDBARC material has resistance to the resist solvent, and thus, intermixing does not occur between NDBARC and resist during resist coating over NDBARC. After exposure and bake, the lithographically exposed portions of both the negative photoresist (30E) and the NDBARC layer (20E) become insoluble in developer due to the chemically amplified crosslinking of the polymers in negative resist and NDBARC layer in the lithographically exposed portions.
摘要翻译：负显影底部抗反射涂层（NDBARC）材料包括含有脂族醇部分，芳族部分和羧酸部分的聚合物。 NDBARC组合物在涂布和烘烤后不溶于典型的抗蚀剂溶剂如丙二醇甲基醚乙酸酯（PGMEA）。 NDBARC材料还包括光致酸发生剂和任选的交联化合物。在NDBARC材料中，羧酸提供了显影剂的溶解度，而单独的醇，单独的羧酸或它们的组合提供了PGMEA的抗性。 NDBARC材料对抗蚀剂溶剂具有抗性，因此在NDBARC的抗蚀涂层期间，NDBARC和抗蚀剂之间不会发生混合。在曝光和烘烤之后，由于在光刻曝光部分中的负光刻胶和NDBARC层中的聚合物的化学扩展交联，负光致抗蚀剂（30E）和NDBARC层（20E）的光刻曝光部分变得不溶于显影剂。

7. 发明申请

WO2009091704A2 AROMATIC FLUORINE-FREE PHOTOACID GENERATORS AND PHOTORESIST COMPOSITIONS CONTAINING THE SAME 审中-公开
标题翻译：芳香无氟光纤发生器和含有它的光电组合物
公开(公告)号：WO2009091704A2
公开(公告)日：2009-07-23
申请号：PCT/US2009030792
申请日：2009-01-13
申请人： IBM , LI WENJIE , HUANG WU-SONG S , VARANASI PUSHKARA R , LIU SEN , POPOVA IRENE Y
发明人： LI WENJIE , HUANG WU-SONG S , VARANASI PUSHKARA R , LIU SEN , POPOVA IRENE Y
IPC分类号： G03F7/004 , C07C317/14 , G03F7/26
CPC分类号： C07C309/59 , C07C25/18 , C07C309/40 , C07C381/12 , G03F7/0045 , G03F7/0397
摘要： Fluorine-free photoacid generators and photoresist compositions containing fluorine-free photoacid generators are enabled as alternatives to PFOS/PFAS photoacid generator-containing photoresists. The photoacid generators are characterized by the presence of a fluorine-free aromatic sulfonate anionic component having one or more electron withdrawing groups. The photoacid generators preferably contain a fluorine-free onium cationic component, more preferably a sulfonium cationic component. The photoresist compositions preferably contain an acid sensitive imaging polymer having a lactone functionality. The compositions are especially useful for forming material patterns using 193nm (ArF) imaging radiation.
摘要翻译：含有无氟光致酸发生剂的无氟光致酸发生剂和光致抗蚀剂组合物可用作具有PFOS / PFAS光致酸产生剂的光致抗蚀剂的替代品。光酸产生剂的特征在于存在具有一个或多个吸电子基团的无氟芳族磺酸盐阴离子组分。光酸产生剂优选含有无氟鎓阳离子成分，更优选含有阳离子锍组分。光致抗蚀剂组合物优选含有具有内酯官能度的酸敏感成像聚合物。组合物特别适用于使用193nm（ArF）成像辐射形成材料图案。

8. 发明申请

WO2008055137A3 SI-CONTAINING POLYMERS FOR NANO-PATTERN DEVICE FABRICATION 审中-公开
标题翻译：用于纳米图案装置制造的含SI聚合物
公开(公告)号：WO2008055137A3
公开(公告)日：2008-08-14
申请号：PCT/US2007082967
申请日：2007-10-30
申请人： IBM , CHEN KUANG-JUNG , HUANG WU-SONG , LI WAI-KIN , LIN YI-HSIUNG S
发明人： CHEN KUANG-JUNG , HUANG WU-SONG , LI WAI-KIN , LIN YI-HSIUNG S
IPC分类号： C08G18/66
CPC分类号： G03F7/0758 , G03F7/0045
摘要： A resist polymer (22) that has nano-scale patterns of sub-lithographic openings (26) located therein that are oriented substantially perpendicular to its major surfaces is provided. Such a resist polymer having the nano-scale patterns is used as an etch mask transferring nano-scale patterns to an underlying substrate such as, for example, dielectric material (12). After the transferring of the nano-scale patterns into the substrate, nano-scale openings having a width of less than 50 nm are created in the substrate. The presence of the nano-scale voids in a dielectric material lowers the dielectric constant, k, of the original dielectric material. In accordance with an aspect of the present invention, the inventive resist polymer comprises a copolymer that includes a first monomer unit (A) that contains a Si-containing component, and a second monomer unit (B) that contains an organic component, wherein said two monomer units (A and B) have different etch rates.
摘要翻译：提供了一种抗蚀剂聚合物（22），其具有位于其中的基本上垂直于其主表面取向的纳米级图案的亚光刻开口（26）。具有纳米级图案的这种抗蚀剂聚合物被用作将纳米级图案转移到下面的基底例如介电材料（12）的蚀刻掩模。在将纳米级图案转移到衬底中之后，在衬底中产生宽度小于50nm的纳米级开口。介电材料中纳米级空隙的存在降低了原始介电材料的介电常数k。根据本发明的一个方面，本发明的抗蚀剂聚合物包含共聚物，该共聚物包含含有含Si组分的第一单体单元（A）和含有有机组分的第二单体单元（B），其中所述两个单体单元（A和B）具有不同的蚀刻速率。

9. 发明申请

WO2008049844A1 HIGH RESOLUTION IMAGING PROCESS USING AN IN-SITU IMAGE MODIFYING LAYER 审中-公开
标题翻译：使用原位图像修改层的高分辨率成像处理
公开(公告)号：WO2008049844A1
公开(公告)日：2008-05-02
申请号：PCT/EP2007/061360
申请日：2007-10-23
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED , AZPIROZ, Jaione, Tirapu , HUANG, Wu-Song , LAWSON, Margaret , PATEL, Kaushal
发明人： AZPIROZ, Jaione, Tirapu , HUANG, Wu-Song , LAWSON, Margaret , PATEL, Kaushal
IPC分类号： G03F7/095 , G03F1/10
CPC分类号： G03F7/095 , G03F1/56 , G03F7/70466
摘要： A method of forming a patterned material layer on a substrate. A photoresist layer is formed on the substrate followed by an image modifying material formed on the photoresist. The image modifying material is patterned to form an image modifying pattern. The image modifying pattern and underlying photoresist are then exposed to suitable radiation. The image modifying pattern modifies the image intensity within the photoresist layer beneath the image modifying pattern. The resulting pattern is then transferred into the substrate.
摘要翻译：一种在衬底上形成图案化材料层的方法。在基底上形成光致抗蚀剂层，随后在光致抗蚀剂上形成图像改性材料。图像修改材料被图案化以形成图像修改图案。然后将图像改变图案和下面的光致抗蚀剂暴露于合适的辐射。图像修改图案修改图像修改图案下面的光致抗蚀剂层内的图像强度。然后将得到的图案转移到基底中。

10. 发明申请

WO2007042348A1 TOP ANTIREFLECTIVE COATING COMPOSITION WITH LOW REFRACTIVE INDEX AT 193NM RADIATION WAVELENGTH 审中-公开
标题翻译：顶部抗反射涂层组合物，具有193NM辐射波长处的低折射率
公开(公告)号：WO2007042348A1
公开(公告)日：2007-04-19
申请号：PCT/EP2006/065877
申请日：2006-08-31
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED , HUANG, Wu-Song , HEATH, William , PATEL, Kaushal , VARANASI, Pushkara
发明人： HUANG, Wu-Song , HEATH, William , PATEL, Kaushal , VARANASI, Pushkara
IPC分类号： G03F7/09
CPC分类号： G03F7/091 , Y10S438/952
摘要： Compositions characterized by the presence of an aqueous base-soluble polymer having aromatic moieties and a refractive index value n of less than 1.5 with respect to a radiation wavelength of 193nm have been found which are especially useful as top antireflective coatings in 193nm dry lithographic processes. Polymers with an ethylenic backbone and having fluorine and sulfonic acid moieties have been found to be especially useful. The compositions enable top reflection control at 193nm while providing ease of use by virtue of their solubility in aqueous alkaline developer solutions.
摘要翻译：已经发现特征在于具有相对于193nm的辐射波长的具有芳香部分和折射率值n小于1.5的水溶性碱溶性聚合物的组合物，其在193nm干法光刻工艺中特别可用作顶部抗反射涂层。已经发现具有乙烯主链并具有氟和磺酸部分的聚合物是特别有用的。该组合物能够在193nm的顶部反射控制，同时由于其在含水碱性显影剂溶液中的溶解度而提供易于使用。

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