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1. 发明申请

WO2010053778A1 APPLICATION OF A SELF-ASSEMBLED MONOLAYER AS AN OXIDE INHIBITOR 审中-公开
标题翻译：作为氧化物抑制剂的自组装单体的应用
公开(公告)号：WO2010053778A1
公开(公告)日：2010-05-14
申请号：PCT/US2009/062334
申请日：2009-10-28
申请人： RAYTHEON COMPANY , HAMPP, Andreas , COBB, Christine
发明人： HAMPP, Andreas , COBB, Christine
IPC分类号： H01L23/485 , H01L21/60
CPC分类号： H05K3/282 , C23C22/02 , H01L24/11 , H01L24/13 , H01L24/81 , H01L2224/1181 , H01L2224/13109 , H01L2224/81801 , H01L2924/00011 , H01L2924/00014 , H01L2924/01006 , H01L2924/01033 , H01L2924/01049 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H05K2203/122 , H05K2203/124 , Y10T29/49126 , H01L2224/0401
摘要： An embodiment is directed to a method of forming a self assembled monolayer to reduce formation of an oxide. The method includes applying an inhibitor to a substrate including conductive contacts and processing the substrate and inhibitor to form the self assembled monolayer.
摘要翻译：一个实施方案涉及形成自组装单层以减少氧化物形成的方法。该方法包括将抑制剂施加到包括导电触点的基底上并处理基底和抑制剂以形成自组装单层。

2. 发明申请

WO2012148869A9 CONTACT METAL FOR HYBRIDIZATION AND RELATED METHODS 审中-公开
标题翻译：接触金属用于杂化和相关方法
公开(公告)号：WO2012148869A9
公开(公告)日：2013-03-21
申请号：PCT/US2012034730
申请日：2012-04-24
申请人： RAYTHEON CO , GETTY JONATHAN , HAMPP ANDREAS , RAMIREZ AARON M , MILLER SCOTT S
发明人： GETTY JONATHAN , HAMPP ANDREAS , RAMIREZ AARON M , MILLER SCOTT S
IPC分类号： H01L21/60 , H01L21/98 , H01L23/485 , H01L25/065
CPC分类号： H01L24/05 , H01L24/03 , H01L24/08 , H01L24/13 , H01L24/16 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2224/03444 , H01L2224/0345 , H01L2224/03452 , H01L2224/0401 , H01L2224/05073 , H01L2224/05083 , H01L2224/05111 , H01L2224/05116 , H01L2224/05139 , H01L2224/05144 , H01L2224/05155 , H01L2224/05166 , H01L2224/05169 , H01L2224/05184 , H01L2224/05573 , H01L2224/05639 , H01L2224/05644 , H01L2224/05664 , H01L2224/05669 , H01L2224/11444 , H01L2224/1145 , H01L2224/11452 , H01L2224/13109 , H01L2224/13111 , H01L2224/136 , H01L2224/16148 , H01L2224/81091 , H01L2224/81201 , H01L2224/81205 , H01L2224/8181 , H01L2224/8191 , H01L2225/06513 , H01L2924/01006 , H01L2924/01019 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/10329 , H01L2924/10332 , H01L2924/10335 , H01L2924/10379 , H01L2924/3651 , H01L2924/01022
摘要： A contact structure (107, 113) for interconnecting a first substrate (102, 102'), e.g. a photodetector, to an indium interconnect structure (106, 106') on a second substrate (104, 104'), e.g. a microelectronic circuit chip, comprises a diffusive layer (108, 108'), e.g. Ni, and a non- oxidising layer (110, 110'), e.g. Au or Ag, with a thickness of approximately 10-200 nm, positioned on the diffusive layer (108, 108') for alignment with the indium interconnect (106, 106'). With the use of a relatively thin layer (110, 110') of non-oxidising material, compared to the larger interconnect structure (106, 106'), the formation of brittle intermetallics, such as Auln2 or Agln2, may be avoided. Rather, more robust intermetallic formations of the interconnect material (In) and the diffusive material (Ni) may be formed.
摘要翻译：用于将第一衬底（102,102'）互连的接触结构（107,113）在第二衬底（104,104'）上的铟互连结构（106,106'）的光电检测器。微电子电路芯片，包括漫射层（108,108'），例如扩散层。 Ni和非氧化层（110,110'），例如， Au或Ag，其厚度约为10-200nm，位于扩散层（108,108'）上以与铟互连（106,106'）对准。通过使用相对薄的非氧化材料层（110,110'），与较大的互连结构（106,106'）相比，可以避免形成脆性金属间化合物，例如Auln2或Agln2。相反，可以形成互连材料（In）和扩散材料（Ni）的更强的金属间化合物。

3. 发明申请

WO2011084932A3 POLYMER SHUTTER COMPOSITIONS AND DEVICES FOR INFRARED SYSTEMS 审中-公开
标题翻译：聚合物快速组合物和用于红外系统的装置
公开(公告)号：WO2011084932A3
公开(公告)日：2013-02-21
申请号：PCT/US2011020065
申请日：2011-01-04
申请人： RAYTHEON CO , HAMPP ANDREAS , HOLT AMANDA L , WEHNER JUSTIN GORDON ADAMS , MORSE DANIEL E
发明人： HAMPP ANDREAS , HOLT AMANDA L , WEHNER JUSTIN GORDON ADAMS , MORSE DANIEL E
IPC分类号： G02F1/15 , G02F1/153
CPC分类号： G02F1/15 , G02F1/153 , G02F2001/1515 , G02F2001/1519 , G02F2203/11
摘要： The present disclosure relates, according to some embodiments, to compositions and devices operable for infra-red transmission and blocking comprising a layered structure having a first electrically conducting layer, a conjugated electrochromic polymer layer, an electrolyte layer and a second electrically conducting layer, wherein the first and second electrically conducting layers have an infrared transparency and the conjugated electrochromic polymers may be operable to be electrically switched between a transparent state that transmits infrared light to an opaque state that does not transmit infrared light. In some embodiments, a device of the disclosure may also have one or more outer substrates sandwiching the other layers. Some embodiments relate to single-layered devices. Some embodiments relate to combined layers. Compositions and devices of the disclosure may be integrated into a wide variety of infrared systems for transmission, shuttering and calibration applications.
摘要翻译：根据一些实施方案，本公开涉及可操作用于红外透射和阻挡的组合物和装置，其包括具有第一导电层，共轭电致变色聚合物层，电解质层和第二导电层的分层结构，其中第一导电层和第二导电层具有红外透明度，并且共轭电致变色聚合物可以可操作地在将红外光透射到不透射红外光的不透明状态的透明状态之间电转换。在一些实施例中，本公开的装置还可以具有夹住其它层的一个或多个外部基板。一些实施例涉及单层设备。一些实施例涉及组合层。本公开的组合物和装置可以集成到用于传输，快门和校准应用的各种红外系统中。

4. 发明申请

WO2012148869A3 CONTACT METAL FOR HYBRIDIZATION AND RELATED METHODS 审中-公开
标题翻译：接触金属用于杂化和相关方法
公开(公告)号：WO2012148869A3
公开(公告)日：2013-01-10
申请号：PCT/US2012034730
申请日：2012-04-24
申请人： RAYTHEON CO , GETTY JONATHAN , HAMPP ANDREAS , RAMIREZ AARON M , MILLER SCOTT S
发明人： GETTY JONATHAN , HAMPP ANDREAS , RAMIREZ AARON M , MILLER SCOTT S
IPC分类号： H01L21/60 , H01L21/98 , H01L23/485 , H01L25/065
CPC分类号： H01L24/05 , H01L24/03 , H01L24/08 , H01L24/13 , H01L24/16 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2224/03444 , H01L2224/0345 , H01L2224/03452 , H01L2224/0401 , H01L2224/05073 , H01L2224/05083 , H01L2224/05111 , H01L2224/05116 , H01L2224/05139 , H01L2224/05144 , H01L2224/05155 , H01L2224/05166 , H01L2224/05169 , H01L2224/05184 , H01L2224/05573 , H01L2224/05639 , H01L2224/05644 , H01L2224/05664 , H01L2224/05669 , H01L2224/11444 , H01L2224/1145 , H01L2224/11452 , H01L2224/13109 , H01L2224/13111 , H01L2224/136 , H01L2224/16148 , H01L2224/81091 , H01L2224/81201 , H01L2224/81205 , H01L2224/8181 , H01L2224/8191 , H01L2225/06513 , H01L2924/01006 , H01L2924/01019 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/10329 , H01L2924/10332 , H01L2924/10335 , H01L2924/10379 , H01L2924/3651 , H01L2924/01022
摘要： A contact structure (107, 113) for interconnecting a first substrate (102, 102'), e.g. a photodetector, to an indium interconnect structure (106, 106') on a second substrate (104, 104'), e.g. a microelectronic circuit chip, comprises a diffusive layer (108, 108'), e.g. Ni, and a non-oxidising layer (110, 110'), e.g. Au or Ag, with a thickness of approximately 10-200 nm, positioned on the diffusive layer (108, 108') for alignment with the indium interconnect (106, 106'). With the use of a relatively thin layer (110, 110') of non-oxidising material, compared to the larger interconnect structure (106, 106'), the formation of brittle intermetallics, such as Auln2 or Agln2, may be avoided. Rather, more robust intermetallic formations of the interconnect material (In) and the diffusive material (Ni) may be formed.
摘要翻译：用于将第一衬底（102,102'）互连的接触结构（107,113）在第二衬底（104,104'）上的铟互连结构（106,106'）的光电检测器。微电子电路芯片，包括漫射层（108,108'），例如扩散层。 Ni和非氧化层（110,110'），例如， Au或Ag，其厚度约为10-200nm，位于扩散层（108,108'）上以与铟互连（106,106'）对准。通过使用相对薄的非氧化材料层（110,110'），与较大的互连结构（106,106'）相比，可以避免形成脆性金属间化合物，例如Auln2或Agln2。相反，可以形成互连材料（In）和扩散材料（Ni）的更强的金属间化合物。

5. 发明申请

WO2012148869A2 CONTACT METAL FOR HYBRIDIZATION AND RELATED METHODS 审中-公开
标题翻译：接触金属用于杂化和相关方法
公开(公告)号：WO2012148869A2
公开(公告)日：2012-11-01
申请号：PCT/US2012/034730
申请日：2012-04-24
申请人： RAYTHEON COMPANY , GETTY, Jonathan , HAMPP, Andreas , RAMIREZ, Aaron, M. , MILLER, Scott, S.
发明人： GETTY, Jonathan , HAMPP, Andreas , RAMIREZ, Aaron, M. , MILLER, Scott, S.
IPC分类号： H01L21/60 , H01L23/485
CPC分类号： H01L24/05 , H01L24/03 , H01L24/08 , H01L24/13 , H01L24/16 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2224/03444 , H01L2224/0345 , H01L2224/03452 , H01L2224/0401 , H01L2224/05073 , H01L2224/05083 , H01L2224/05111 , H01L2224/05116 , H01L2224/05139 , H01L2224/05144 , H01L2224/05155 , H01L2224/05166 , H01L2224/05169 , H01L2224/05184 , H01L2224/05573 , H01L2224/05639 , H01L2224/05644 , H01L2224/05664 , H01L2224/05669 , H01L2224/11444 , H01L2224/1145 , H01L2224/11452 , H01L2224/13109 , H01L2224/13111 , H01L2224/136 , H01L2224/16148 , H01L2224/81091 , H01L2224/81201 , H01L2224/81205 , H01L2224/8181 , H01L2224/8191 , H01L2225/06513 , H01L2924/01006 , H01L2924/01019 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/10329 , H01L2924/10332 , H01L2924/10335 , H01L2924/10379 , H01L2924/3651 , H01L2924/01022
摘要： A contact structure for interconnecting a first substrate to an indium interconnect structure on a second substrate. The contact structure comprises a diffusive layer and a non-oxidizing layer, with a thickness of less than approximately 150 nm. positioned on the diffusive layer for alignment with the indium interconnect.
摘要翻译：一种用于将第一衬底与铟互连结构互连在第二衬底上的接触结构。接触结构包括扩散层和非氧化层，厚度小于约150nm。位于扩散层上以与铟互连对准。

6. 发明申请

WO2011084932A2 POLYMER SHUTTER COMPOSITIONS AND DEVICES FOR INFRARED SYSTEMS 审中-公开
标题翻译：聚合物快速组合物和用于红外系统的装置
公开(公告)号：WO2011084932A2
公开(公告)日：2011-07-14
申请号：PCT/US2011/020065
申请日：2011-01-04
申请人： RAYTHEON COMPANY , HAMPP, Andreas , HOLT, Amanda, L. , WEHNER, Justin, Gordon Adams , MORSE, Daniel, E.
发明人： HAMPP, Andreas , HOLT, Amanda, L. , WEHNER, Justin, Gordon Adams , MORSE, Daniel, E.
IPC分类号： G02F1/15
CPC分类号： G02F1/15 , G02F1/153 , G02F2001/1515 , G02F2001/1519 , G02F2203/11
摘要： The present disclosure relates, according to some embodiments, to compositions and devices operable for infra-red transmission and blocking comprising a layered structure having a first electrically conducting layer, a conjugated electrochromic polymer layer, an electrolyte layer and a second electrically conducting layer, wherein the first and second electrically conducting layers have an infrared transparency and the conjugated electrochromic polymers may be operable to be electrically switched between a transparent state that transmits infrared light to an opaque state that does not transmit infrared light. In some embodiments, a device of the disclosure may also have one or more outer substrates sandwiching the other layers. Some embodiments relate to single-layered devices. Some embodiments relate to combined layers. Compositions and devices of the disclosure may be integrated into a wide variety of infrared systems for transmission, shuttering and calibration applications.
摘要翻译：根据一些实施方案，本公开涉及可操作用于红外透射和阻挡的组合物和装置，其包括具有第一导电层，共轭电致变色聚合物层，电解质层和第二导电层的分层结构，其中第一和第二导电层具有红外透明度，并且共轭电致变色聚合物可操作以在将红外光透射到不透射红外光的不透明状态的透明状态之间电切换。在一些实施例中，本公开的装置还可以具有夹住其它层的一个或多个外部基板。一些实施例涉及单层设备。一些实施例涉及组合层。本公开的组合物和装置可以集成到用于传输，快门和校准应用的各种红外系统中。

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