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    • 2. 发明申请
    • CIRCUIT AND METHOD FOR GENERATING ELECTRICAL SOLITONS WITH JUNCTION FIELD EFFECT TRANSISTORS
    • 用场效应晶体管生成电孤子的电路和方法
    • WO2008039814A3
    • 2008-05-29
    • PCT/US2007079477
    • 2007-09-26
    • DSM SOLUTIONS INCHAMLIN CHRISTOPHER L
    • HAMLIN CHRISTOPHER L
    • H03B5/18
    • H03B5/18
    • A circuit can include an amplifier having at least a first junction field effect transistor (JFET) of a first conductivity type with a source coupled to a first power supply node, and a drain coupled to an amplifier output node. A first variable bias circuit can be coupled between the drain and at least one gate of the first JFET. The first variable bias circuit can alter a direct current (DC) bias to the first JFET according a potential at the amplifier output node. A first bias impedance can be coupled between the drain of the first JFET and a second power supply node. The circuit can also include a non-linear transmission line (NLTL) coupled between the amplifier output and a gate of the first JFET. The NLTL being configured to propagate an electrical soliton.
    • 电路可以包括放大器,该放大器具有第一导电类型的至少第一结型场效应晶体管(JFET),其源极耦合到第一电源节点,漏极耦合到放大器输出节点。 第一可变偏置电路可以耦合在第一JFET的漏极和至少一个栅极之间。 第一可变偏置电路可以根据放大器输出节点处的电位来改变到第一JFET的直流(DC)偏置。 第一偏置阻抗可以耦合在第一JFET的漏极和第二电源节点之间。 该电路还可以包括耦合在放大器输出和第一JFET的栅极之间的非线性传输线(NLTL)。 NLTL被配置为传播电孤子。
    • 3. 发明申请
    • CIRCUIT AND METHOD FOR GENERATING ELECTRICAL SOLITONS WITH JUNCTION FIELD EFFECT TRANSISTORS
    • 用于产生具有连接场效应晶体管的电极的电路和方法
    • WO2008039814A2
    • 2008-04-03
    • PCT/US2007/079477
    • 2007-09-26
    • DSM SOLUTIONS, INC.HAMLIN, Christopher, L.
    • HAMLIN, Christopher, L.
    • H03B5/12
    • H03B5/18
    • A circuit can include an amplifier having at least a first junction field effect transistor (JFET) of a first conductivity type with a source coupled to a first power supply node, and a drain coupled to an amplifier output node. A first variable bias circuit can be coupled between the drain and at least one gate of the first JFET. The first variable bias circuit can alter a direct current (DC) bias to the first JFET according a potential at the amplifier output node. A first bias impedance can be coupled between the drain of the first JFET and a second power supply node. The circuit can also include a non-linear transmission line (NLTL) coupled between the amplifier output and a gate of the first JFET. The NLTL being configured to propagate an electrical soliton.
    • 电路可以包括具有至少第一导电类型的第一结场效应晶体管(JFET)的放大器,其中耦合到第一电源节点的源极和耦合到放大器输出节点的漏极。 第一可变偏置电路可以耦合在第一JFET的漏极和至少一个栅极之间。 第一可变偏置电路可以根据放大器输出节点处的电位改变到第一JFET的直流(DC)偏置。 第一偏置阻抗可以耦合在第一JFET的漏极和第二电源节点之间。 电路还可以包括耦合在放大器输出和第一JFET的栅极之间的非线性传输线(NLTL)。 NLTL被配置为传播电孤子。