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1. 发明申请

WO2009087125A1 DOUBLE-GATE FLOATING-BODY MEMORY DEVICE 审中-公开
标题翻译：双门浮动身体记忆装置
公开(公告)号：WO2009087125A1
公开(公告)日：2009-07-16
申请号：PCT/EP2009/050031
申请日：2009-01-05
申请人： CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE , UNIVERSITE CATHOLIQUE DE LOUVAIN , BAWEDIN, Maryline , CRISTOLOVEANU, Sorin Ioan , FLANDRE, Denis , RENAUX, Christian , CRAHAY, André
发明人： BAWEDIN, Maryline , CRISTOLOVEANU, Sorin Ioan , FLANDRE, Denis , RENAUX, Christian , CRAHAY, André
IPC分类号： H01L27/108 , H01L29/78 , G11C11/404
CPC分类号： H01L29/7841 , G11C11/404 , G11C11/4085 , G11C2211/4016 , H01L27/108 , H01L27/10802
摘要： The invention concerns a memory device comprising a transistor having a floating body (102) positioned between source and drain regions (104, 106), the floating body being sandwiched between first and second insulated gates each comprising a gate electrode (110, 114); and control circuitry (124) arranged to program the state of said floating body to have an accumulation or depletion of majority carriers by applying one of first and second voltage level between the first gate (114) and at least one of the source and drain regions, and to retain the programmed state of said floating body by applying a third voltage level to the second gate (110), said voltages being switched in a time duration shorter than 100 ns, and preferentially shorter than 10 ns.
摘要翻译：本发明涉及一种包括晶体管的存储器件，该晶体管具有位于源极和漏极区域之间的浮体（102），该浮体夹在第一和第二绝缘栅极之间，每个包括栅电极（110,114）; 以及控制电路（124），被布置为通过在所述第一栅极（114）和所述源极和漏极区域中的至少一个之间施加第一和第二电压电平之一来对所述浮体的状态进行编程以具有多数载流子的累积或耗尽并且通过对第二栅极（110）施加第三电压电平来保持所述浮体的编程状态，所述电压在短于100ns的持续时间内切换，优先地短于10ns。

2. 发明申请

WO2010142532A1 MODIFIED BACTERIOPHAGE, BIOSENSOR CONTAINING SAME, AND METHOD OF USE 审中-公开
标题翻译：改良的细菌，含有生物传感器及其使用方法
公开(公告)号：WO2010142532A1
公开(公告)日：2010-12-16
申请号：PCT/EP2010/057279
申请日：2010-05-26
申请人： UNIVERSITE CATHOLIQUE DE LOUVAIN , PROOST, Joris , SANTORO, Ronny , SOUMILLION, Patrice , FLANDRE, Denis , DESCHUYTENEER, Geneviève
发明人： PROOST, Joris , SANTORO, Ronny , SOUMILLION, Patrice , FLANDRE, Denis , DESCHUYTENEER, Geneviève
IPC分类号： C12N7/00 , C12N15/10
CPC分类号： G01N33/553 , C07K14/005 , C12N2795/14122
摘要： The invention relates to bacteriophages comprising a modified coat protein capable of binding to a metal oxide surface. The invention also relates to methods for detecting and/or quantifying targets in a sample using same.
摘要翻译：本发明涉及包含能够结合金属氧化物表面的改性外壳蛋白的噬菌体。本发明还涉及使用它们检测和/或定量样品中靶标的方法。

3. 发明申请

WO2008132210A1 ULTRA-LOW-POWER CIRCUIT 审中-公开
标题翻译：超低功耗电路
公开(公告)号：WO2008132210A1
公开(公告)日：2008-11-06
申请号：PCT/EP2008/055239
申请日：2008-04-29
申请人： UNIVERSITE CATHOLIQUE DE LOUVAIN , BOL, David , FLANDRE, Denis , LEGAT, Jean-Didier
发明人： BOL, David , FLANDRE, Denis , LEGAT, Jean-Didier
IPC分类号： H03K19/00
CPC分类号： H03K19/0013 , H03K19/00361
摘要： An ultra-low-power transconductance device is provided, (Fig.1b, Fig. 1c), comprising a series connection of a transistor of a first channel type (A) and a transistor of a second channel type (B), the first channel type having a different polarity than the second channel type. The transistors each have a source, a drain and a gate. The source of the transistor of the first channel type (A) is coupled with the source of the transistor of the second channel type (B) and the drain of the transistor of the first channel type (A) is coupled with the gate of the transistor of the second channel type (B).
摘要翻译：提供了一种超低功率跨导装置（图1b，图1c），其包括第一通道类型（A）的晶体管和第二通道类型（B）的晶体管的串联连接，第一通道类型具有与第二通道类型不同的极性。晶体管各自具有源极，漏极和栅极。第一通道类型（A）的晶体管的源极与第二沟道类型（B）的晶体管的源极耦合，并且第一沟道类型（A）的晶体管的漏极与栅极第二通道类型（B）的晶体管。

4. 发明申请

WO2004001403A1 METHOD AND DEVICE FOR HIGH SENSITIVITY DETECTION OF THE PRESENCE OF DNA AND OTHER PROBES 审中-公开
标题翻译：用于高灵敏度检测DNA和其他探针存在的方法和装置
公开(公告)号：WO2004001403A1
公开(公告)日：2003-12-31
申请号：PCT/BE2003/000109
申请日：2003-06-24
申请人： UNIVERSITE CATHOLIQUE DE LOUVAIN , FLANDRE, Denis , HAGELSIEB, Luis, Moreno , PAMPIN, Rémi , BOURGEOIS, David , REMACLE José , LOBERT Pierre-Emmannuel
发明人： FLANDRE, Denis , HAGELSIEB, Luis, Moreno , PAMPIN, Rémi , BOURGEOIS, David , REMACLE José , LOBERT Pierre-Emmannuel
IPC分类号： G01N27/02
CPC分类号： G01N27/221 , G01N27/226 , G01N33/5438 , Y10T436/147777 , Y10T436/163333 , Y10T436/173845
摘要： The present invention provides a method for capacitive detection of the presence of target sample on a substrate, which comprises the steps of: binding a target sample to selective binding sites on the substrate, the target sample being directly or indirectly labeled with conductive labels, and sensing the presence of the bound conductive labels to a binding site to thereby determine the presence of the target sample. The sensing step is carried out by a capacitive detection of the presence of the conductive labels. The present invention also provides a capacitive sensor device for determining the presence of a target sample. Conductive labels are directly or indirectly couplable to the target sample. The capacitive sensor device comprises a substrate having attached thereto a binding site able to selectively bind a target sample, a capacitive sensor element, and sensing circuitry for determining the presence of a target sample bound to the binding site by application of electrical signals to a capacitive sensor element. The capacitive sensor element comprises a set of at least two electrodes with non-conductive surfaces in a region associated with the binding site.
摘要翻译：本发明提供了一种用于对衬底上存在靶样品进行电容检测的方法，其包括以下步骤：将靶样品与底物上的选择性结合位点结合，目标样品直接或间接用导电标记标记，以及感测结合的导电标记物的存在到结合位点，从而确定目标样品的存在。感测步骤通过对导电标签的存在进行电容检测来进行。本发明还提供一种用于确定目标样品的存在的电容传感器装置。导电标签直接或间接连接到目标样品。电容式传感器装置包括一个衬底，其上附着有能够选择性地结合目标样本的结合位置，电容传感器元件和感测电路，用于通过将电信号施加到电容来确定结合位点的目标样本的存在传感元件电容传感器元件包括在与结合位点相关联的区域中具有非导电表面的一组至少两个电极。

5. 发明申请

WO2009092771A1 NETWORK ARCHITECTURE FOR WIRELESSLY INTERFACING SENSORS AT ULTRA LOW POWER 审中-公开
标题翻译：无线接口传感器的超低功耗网络架构
公开(公告)号：WO2009092771A1
公开(公告)日：2009-07-30
申请号：PCT/EP2009/050734
申请日：2009-01-22
申请人： UNIVERSITÉ CATHOLIQUE DE LOUVAIN , GOSSET, Geoffroy Pascal M. , FLANDRE, Denis , DELMÉE, Gilles , RUE, Bertrand
发明人： GOSSET, Geoffroy Pascal M. , FLANDRE, Denis , DELMÉE, Gilles , RUE, Bertrand
IPC分类号： H04Q9/00
CPC分类号： H04Q9/00 , G08C19/12 , G08C2201/20 , G08C2201/91 , H04Q2209/47 , H04Q2209/50
摘要： A sensing network is described, consisting of a multiplexing reader and one or more sensor pairs, each sensor pair comprising a transponder and a dedicated reader, dedicated to that transponder, each transponder having a sensor. Each sensor pair is able to wirelessly interface and power both capacitive and resistive sensors at a short distance with high efficiency. By providing a dedicated reader for each transponder, each link can be optimized and there is no need for the dedicated reader to distinguish between signals from other transponders. The transponder generates an analog signal directly using a sensor or analog memory value and sends it by modulation to the dedicated reader. So, the dedicated readers do not need to have circuitry to demodulate a digital signal or ID code. The transponder includes the sensors and their electronic circuits and can be optionally remotely powered by the dedicated reader through the wireless link. The expected consumption of the dedicated reader can be lower than 200μW.
摘要翻译：描述了由复用读取器和一个或多个传感器对组成的感测网络，每个传感器对包括专用于该应答器的应答器和专用读取器，每个应答器具有传感器。每个传感器对能够以较高的效率在短距离内无线连接和供电电容式和电阻式传感器。通过为每个应答器提供专用读卡器，可以优化每个链路，并且不需要专用读取器来区分来自其他应答器的信号。应答器使用传感器或模拟存储器值直接生成模拟信号，并通过调制将其发送到专用读卡器。因此，专用读卡器不需要电路来解调数字信号或ID码。应答器包括传感器及其电子电路，并且可以由专用读取器通过无线链路远程供电。专用读卡器的预期消耗可以低于200μW。

6. 发明申请

WO2008028683A1 INSULATED SUBSTRATE IMPEDANCE TRANSDUCERS 审中-公开
标题翻译：绝缘衬底阻抗传导器
公开(公告)号：WO2008028683A1
公开(公告)日：2008-03-13
申请号：PCT/EP2007/007861
申请日：2007-09-10
申请人： UNIVERSITE CATHOLIQUE DE LOUVAIN , FACULTES UNIVERSITAIRES NOTRE-DAME DE LA PAIX , PAMPIN, Rémi, Sébastien , FLANDRE, Denis , MORENO-HAGELSIEB, Luis , FOULTIER, Boris , REMACLE, José
发明人： PAMPIN, Rémi, Sébastien , FLANDRE, Denis , MORENO-HAGELSIEB, Luis , FOULTIER, Boris , REMACLE, José
IPC分类号： G01N27/414 , G01N27/12
CPC分类号： G01N27/414 , C12Q1/6816 , C12Q1/6825 , G01N33/48728 , C12Q2565/607
摘要： The present invention provides an electronic transducer (10) and a method for detecting and/or characterising target materials or physico-chemical stimuli in an external medium (8) using the electronic transducer (10). The electronic transducer (10) comprises a sensing element (3) featuring a variable conductance when exposed to a stimulus from the external medium and a first and second electrode (5a, 5b) spaced apart on or in a sensing material surface of a substrate, the sensing element being provided in or on he substrate and being located between the first and the second electrodes (5a, 5b) forming a pair of sensing electrodes for sensing a change in conductance of the sensing element (3) in a direction substantially parallel to the sensing material surface, at least one of the sensing electrodes (5a, 5b) being electrically insulated from the sensing element (3) by a dielectric layer (4), so as to be capacitively coupled to the sensing element (3). An insulating layer or target specific layer (7) may optionally be provided covering the sensing element (3) and optionally the sensing electrodes and being adapted for contact with the external medium (8). Electrical measurements made between the pair of sensing electrodes (5a, 5b) are influenced by the impedance of the channel (3) which is affected by the presence of the medium (8) to be tested.
摘要翻译：本发明提供一种电子换能器（10）和用于使用电子换能器（10）检测和/或表征外部介质（8）中的目标材料或物理 - 化学刺激的方法。电子换能器（10）包括感测元件（3），其在暴露于来自外部介质的刺激时具有可变电导，以及在衬底的感测材料表面上或其中的间隔开的第一和第二电极（5a，5b）所述感测元件设置在所述衬底中或衬底上并且位于所述第一和第二电极（5a，5b）之间，形成一对感测电极，用于感测感测元件（3）在基本上平行于感测材料表面，至少一个感测电极（5a，5b）通过电介质层（4）与感测元件（3）电绝缘，以便电容耦合到感测元件（3）。可以可选地设置覆盖感测元件（3）和可选地感测电极并适于与外部介质（8）接触的绝缘层或靶特定层（7）。在一对感测电极（5a，5b）之间进行的电测量受到待测试介质（8）的存在影响的通道（3）的阻抗的影响。

7. 发明申请

WO2002078075A1 FABRICATION METHOD OF SO1 SEMICONDUCTOR DEVICES 审中-公开
标题翻译： SO1半导体器件的制造方法
公开(公告)号：WO2002078075A1
公开(公告)日：2002-10-03
申请号：PCT/BE2002/000043
申请日：2002-03-25
申请人： UNIVERSITÉ CATHOLIQUE DE LOUVAIN , FLANDRE, Denis , NEVE de MEVERGNIES, Amaury , RASKIN, Jean-Pierre
发明人： FLANDRE, Denis , NEVE de MEVERGNIES, Amaury , RASKIN, Jean-Pierre
IPC分类号： H01L21/336
CPC分类号： H01L29/785 , H01L21/76256 , H01L21/76264 , H01L21/76275 , H01L29/42384 , H01L29/42392 , H01L29/66772 , H01L29/78603
摘要： The present invention relates to a method for fabrication of semiconductor devices, in particular but not limited to the fabrication of double gate transistors of the type Gate-All-Around or "semiconductor-on-nothing" transistors and devices. A method according to the present invention comprises the steps of: (a) forming a trench in a least a first substrate, (b) transferring semiconductor material over the trench to form a semiconductor bridge across the trench, the semiconductor bridge defining an active area. The bridge may be free to oscillate above the trench without using removing a sacrificial layer. The method may also include the steps of: (c) forming a gate insulator on the semiconductor bridge, and (d) applying gate material on the gate insulator, thus forming a gate.
摘要翻译：本发明涉及一种制造半导体器件的方法，特别是但不限于制造栅型全能型或“无半导体器件”晶体管和器件的双栅极晶体管。根据本发明的方法包括以下步骤：（a）在至少第一衬底中形成沟槽，（b）将半导体材料转移到所述沟槽上以在所述沟槽上形成半导体桥，所述半导体桥限定有源区。桥可以自由地在沟槽上方振荡，而不用去除牺牲层。该方法还可以包括以下步骤：（c）在半导体电桥上形成栅极绝缘体，以及（d）在栅极绝缘体上施加栅极材料，从而形成栅极。

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