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1. 发明申请

WO2023091530A1 INTERFACE PREPARATION FOR TANDEM PHOTOVOLTAIC DEVICES 审中-公开
公开(公告)号：WO2023091530A1
公开(公告)日：2023-05-25
申请号：PCT/US2022/050169
申请日：2022-11-16
申请人： FIRST SOLAR, INC.
发明人： BECKER, James , CHANDRASEKARAN, Vinodh , KOTARBA, Casimir , LOS, Andrei , MA, Jialiu
IPC分类号： H01L31/0725 , H01L31/078 , H01L31/18
摘要： Ways of making and using tandem photovoltaic devices are provided, where such devices can include a first submodule, a second submodule, and an interface between the first submodule and the second submodule. The interface permits a portion of light to pass therethrough and optically couples the first submodule and the second submodule. Optically coupling the first submodule and the second submodule includes reducing reflection of the portion of light passing through the interface.

2. 发明申请

WO2020139826A1 PHOTOVOLTAIC DEVICES AND METHODS OF FORMING THE SAME 审中-公开
公开(公告)号：WO2020139826A1
公开(公告)日：2020-07-02
申请号：PCT/US2019/068307
申请日：2019-12-23
申请人： FIRST SOLAR, INC.
发明人： POWELL, Rick , CHOI, Jongwoo
IPC分类号： H01L31/0296 , H01L31/073 , H01L31/18
摘要： A photovoltaic device includes an electron blocking layer (EBL) and an absorber layer. The EBL is positioned between the absorber layer and a back contact layer. A material of the EBL is a cadmium zinc telluride Cd (1-y) Zn (y) Te, and a material of the absorber layer is a cadmium telluride selenide CdTe (1-x) Se (x) producing a lattice mismatch between the materials of the EBL and between the materials of the absorber of less than about two tenths of a percent when x ~ y and has a value less than about 0.4.

3. 发明申请

WO2020033799A1 SYSTEMS AND METHODS FOR VAPORIZATION AND VAPOR DISTRIBUTION 审中-公开
公开(公告)号：WO2020033799A1
公开(公告)日：2020-02-13
申请号：PCT/US2019/045854
申请日：2019-08-09
申请人： FIRST SOLAR, INC.
发明人： BARDEN, John , POWELL, Rick , ROGGELIN, Aaron , VORA, Nirav
IPC分类号： C23C14/24 , C23C14/26 , C23C14/56 , C23C14/22 , C23C16/448 , H01L31/18
摘要： Distributor assemblies for vapor transport deposition systems, and methods of conducting vapor transport deposition, are described.

4. 发明申请

WO2019152174A1 METHOD FOR GROUP V DOPING OF AN ABSORBER LAYER IN PHOTOVOLTAIC DEVICES 审中-公开
公开(公告)号：WO2019152174A1
公开(公告)日：2019-08-08
申请号：PCT/US2019/013437
申请日：2019-01-14
申请人： FIRST SOLAR, INC.
发明人： GROVER, Sachit , LU, Dingyuan , MALIK, Roger , XIONG, Gang
IPC分类号： H01L31/18
CPC分类号： H01L31/1828 , H01L31/1832
摘要： According to the embodiments provided herein, a method for doping an absorber layer can include contacting the absorber layer with an annealing compound. The annealing compound can include cadmium chloride and a group V salt comprising an anion and a cation. The anion, the cation, or both can include a group V element. The method can include annealing the absorber layer, whereby the absorber layer is doped with at least a portion of the group V element of the annealing compound.

5. 发明申请

WO2019099607A1 LAYER STRUCTURES FOR PHOTOVOLTAIC DEVICES AND PHOTOVOLTAIC DEVICES INCLUDING THE SAME 审中-公开
公开(公告)号：WO2019099607A1
公开(公告)日：2019-05-23
申请号：PCT/US2018/061188
申请日：2018-11-15
申请人： FIRST SOLAR, INC.
发明人： CHEN, Le , GUO, Jing , WEISS, Dirk
IPC分类号： H01L31/0224 , H01L31/073 , H01L31/18
CPC分类号： H01L31/022466 , H01L31/022475 , H01L31/073 , H01L31/1828
摘要： A layer structure for a photovoltaic device comprising: a transparent conductive oxide layer comprising indium tin oxide (20); a layer of tin dioxide (30) adjacent to the indium tin oxide of the transparent conductive oxide layer; and a layer of zinc magnesium oxide (40) adjacent to the layer of tin dioxide, wherein the layer of zinc magnesium oxide is an alloy of zinc oxide and magnesium oxide. A photovoltaic device comprising: a transparent conductive oxide layer comprising indium tin oxide; a layer of tin dioxide disposed on the indium tin oxide of the transparent conductive oxide layer; a layer of zinc magnesium oxide adjacent to the layer of tin dioxide, wherein the layer of zinc magnesium oxide is an alloy of zinc oxide and magnesium oxide; and an absorber layer disposed on the layer of zinc magnesium oxide, wherein the absorber layer comprises cadmium, tellurium, selenium, or any combination thereof.

6. 发明申请

WO2018157106A8 THIN FILM STACKS FOR GROUP V DOPING, PHOTOVOLTAIC DEVICES INCLUDING THE SAME, AND METHODS FOR FORMING PHOTOVOLTAIC DEVICES WITH THIN FILM STACKS 审中-公开
公开(公告)号：WO2018157106A8
公开(公告)日：2018-08-30
申请号：PCT/US2018/019848
申请日：2018-02-27
申请人： FIRST SOLAR, INC.
发明人： GROVER, Sachit , LEE, Chungho , LI, Xiaoping , LU, Dingyuan , MALIK, Roger , XIONG, Gang
IPC分类号： H01L31/0296
摘要： According to the embodiments provided herein, a method for forming a photovoltaic device can include depositing a plurality of semiconductor layers. The plurality of semiconductor layers can include a doped layer that is doped with a group V dopant. The doped layer can include cadmium selenide or cadmium telluride. The method can include annealing the plurality of semiconductor layers to form an absorber layer.

7. 发明申请

WO2018156698A1 DOPED PHOTOVOLTAIC SEMICONDUCTOR LAYERS AND METHODS OF MAKING 审中-公开
公开(公告)号：WO2018156698A1
公开(公告)日：2018-08-30
申请号：PCT/US2018/019129
申请日：2018-02-22
申请人： FIRST SOLAR, INC.
发明人： GROVER, Sachit , LI, Xiaoping , MALIK, Roger , SEYEDMOHAMMADI, Shahram , XIONG, Gang , ZHANG, Wei
IPC分类号： H01L31/0296 , H01L31/18
摘要： Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer.

8. 发明申请

WO2018071509A1 PHOTOVOLTAIC DEVICE WITH TRANSPARENT TUNNEL JUNCTION 审中-公开
标题翻译：带透明隧道结的光伏设备
公开(公告)号：WO2018071509A1
公开(公告)日：2018-04-19
申请号：PCT/US2017/056092
申请日：2017-10-11
申请人： FIRST SOLAR, INC.
发明人： GLOECKLER, Markus , MEI, Fang , ZHANG, Wei
IPC分类号： H01L31/0224 , H01L31/0725 , H01L31/073
摘要： A photovoltaic device includes a substrate, a semiconductor stack and a transparent tunnel junction. The semiconductor stack includes an n-type layer selected from a first transparent conductive oxide layer, or a window layer, or both; and a p-type absorber layer disposed on the n-type layer, wherein the absorber layer consists essentially of CdSexTe(1-x), wherein x is from 1 to about 40 at. %. The transparent tunnel junction comprises a transparent interface layer of Cd y Zn (1-y) Te doped to be p+type, and a transparent contact layer doped to be n+type, and the interface layer is disposed between the p-type absorber layer and the transparent contact layer. In bifacial embodiments, the tunnel junction forms a transparent back contact and electrode; and in multi-junction embodiments, the tunnel junction forms a diode-like connector between top and bottom cells. The transparent contact layer may comprise tin oxide or zinc oxide doped with aluminum, fluorine or indium. The photovoltaic device may also include an electron reflector layer and/or an optical reflector layer.
摘要翻译：光伏器件包括衬底，半导体堆叠和透明隧道结。该半导体堆叠包括选自第一透明导电氧化物层或窗口层或两者的n型层; 以及设置在所述n型层上的p型吸收层，其中所述吸收层基本上由CdSexTe（1-x）组成，其中x为1至约40at。％。透明隧道结包括掺杂为p +型的Cd y Zn（1-y）Te的透明界面层和掺杂为n + 型，并且界面层设置在p型吸收层和透明接触层之间。在双面实施例中，隧道结形成透明背接触和电极; 并且在多结实施例中，隧道结在顶部和底部单元之间形成二极管状连接器。透明接触层可以包含掺杂有铝，氟或铟的氧化锡或氧化锌。光伏器件还可以包括电子反射层和/或光反射层。

9. 发明申请

WO2017176463A1 DEVICES AND METHODS FOR MAKING POLYCRYSTALLINE ALLOYS 审中-公开
标题翻译：用于制备多晶合金的装置和方法
公开(公告)号：WO2017176463A1
公开(公告)日：2017-10-12
申请号：PCT/US2017/023802
申请日：2017-03-23
申请人： FIRST SOLAR, INC.
发明人： GOVINDARAJAN, Shrinivas , LATUSEK, Michael , WAGNER, Christopher , YAN, Feng
IPC分类号： C04B35/547 , C04B35/645 , C04B35/65 , C01B19/00 , C01G11/02 , C01B17/20 , B22F3/10 , B22F3/105
CPC分类号： B22F3/23 , B22F3/003 , B22F3/1039 , B22F3/24 , B22F9/16 , B22F2003/248 , B22F2202/11 , B22F2203/13 , B22F2301/30 , B22F2302/45 , B22F2303/15 , B22F2304/10 , B22F2998/10 , B22F2999/00 , C01B19/002 , C01B19/007 , C01G11/02 , C01P2002/54 , C01P2002/84 , C01P2004/02 , C04B35/547 , C04B35/645 , C04B35/65 , C04B2235/40 , C04B2235/401 , C04B2235/408 , C04B2235/428 , C04B2235/5427 , C04B2235/5436 , C04B2235/6567 , C04B2235/662 , C04B2235/665 , C04B2235/762 , C04B2235/765 , C04B2235/77 , C22C1/0483
摘要： A process for preparing alloy products is described using a self-sustaining or self-propagating SHS-type combustion process with point-source ignition, preferably a laser, in a pressurized vessel. Binary, ternary and quaternary alloys can be formed with control over polycrystalline structure and bandgap. Methods to tune the bandgap and the alloys formed are described. The alloy products may be doped. Preferably sulfides, tellurides or selenides are formed. Cooling during reaction takes place.
摘要翻译：在加压容器中使用自维持或自蔓延SHS型燃烧过程和点源激发，优选激光，描述了制备合金产品的方法。二元，三元和四元合金可通过控制多晶结构和带隙形成。描述了调整带隙和形成的合金的方法。合金产品可以被掺杂。优选形成硫化物，碲化物或硒化物。反应过程中冷却。

10. 发明申请

WO2016073343A1 MOUNTING DEVICE FOR A PHOTOVOLTAIC MODULE 审中-公开
标题翻译：用于光伏模块的安装设备
公开(公告)号：WO2016073343A1
公开(公告)日：2016-05-12
申请号：PCT/US2015/058591
申请日：2015-11-02
申请人： FIRST SOLAR, INC.
发明人： LAMB, Jeffrey , SCHNEIDER, Matthew , WIKTOROWICZ, Bart
IPC分类号： F16C35/07 , F24J2/52 , H01L31/05
CPC分类号： F16C17/02 , F16C13/04 , F16C17/10 , F16C33/043 , F16C33/06 , F16C33/201 , F16C2204/20 , F16C2300/14 , F16C2300/30 , F24S25/12 , F24S30/425 , F24S2030/15 , G01S3/7861 , Y02E10/47
摘要： A bearing inner race for a solar panel tracker positioning system includes a semi-circular shaped body having a first upper land and an oppositely facing second upper land. A first elongated aperture is positioned proximate to the first upper land and a second elongated aperture is positioned proximate to the second upper land. A first alignment ring is centered within the first elongated through aperture and a second alignment ring is centered within the second elongated through aperture. The bearing inner race also includes a ground stud integrally connected to the body in an as-cast condition of the body.
摘要翻译：一种用于太阳能面板跟踪器定位系统的轴承内圈包括具有第一上部平台和相对面对的第二上部平台的半圆形主体。第一细长孔定位成靠近第一上部平台并且第二细长孔定位成靠近第二上部平台。第一对准环在第一细长通孔内居中，第二对准环在第二细长通孔内居中。轴承内圈还包括在主体的铸态状态下与主体一体地连接的地脚。

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