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1. 发明申请

WO2009119952A1 METHOD OF MANUFACTURING A LIGHT GENERATING DEVICE WITH REQUIRED WAVELENGTH 审中-公开
标题翻译：制造具有所需波长的发光装置的方法
公开(公告)号：WO2009119952A1
公开(公告)日：2009-10-01
申请号：PCT/KR2008/005928
申请日：2008-10-09
申请人： WOOREE LST CO., LTD. , AHN, Do-Yeol , PARK, Seoung-Hwan
发明人： AHN, Do-Yeol , PARK, Seoung-Hwan
IPC分类号： H01L33/00
CPC分类号： H01L33/16 , H01L33/32
摘要： A method of manufacturing a light generating device with required wavelength is disclosed. According to the method, a) a required wavelength is determined. b) A polar angle and an azimuthal angle corresponding to the required wavelength in a nitride semiconductor are determined. Then, c) a nitride semiconductor crystal is grown according to the polar angle and the azimuthal angle. Therefore, a light generating device with required wavelength may be manufactured without adjusting amounts of elemsnts of compound semiconductor.
摘要翻译：公开了一种制造具有所需波长的发光装置的方法。根据该方法，a）确定所需的波长。 b）确定对应于氮化物半导体中所需波长的极角和方位角。然后，c）根据极角和方位角生长氮化物半导体晶体。因此，可以在不调整化合物半导体的电子量的情况下制造具有所需波长的发光装置。

2. 发明申请

WO2007024122A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：WO2007024122A1
公开(公告)日：2007-03-01
申请号：PCT/KR2006/003363
申请日：2006-08-25
申请人： EPIVALLEY CO., LTD. , PARK, Eun-Hyun , AHN, Do-Yeol , YOO, Tae-Kyung
发明人： PARK, Eun-Hyun , AHN, Do-Yeol , YOO, Tae-Kyung
IPC分类号： H01L33/00
CPC分类号： H01L33/26 , B82Y20/00 , H01S5/34333 , H01S5/34393 , H01S5/347
摘要： The present invention discloses a semiconductor light emitting device comprising a plurality of semiconductor layers including an active layer for generating light by recombination of an electron and a hole. Here, the active layer includes an Al x Ga y In 1-x-y N (0≤x≤l, 0≤y≤l, 0≤x+y≤l) well layer and a Mg a Zn 1-a O (0
摘要翻译：本发明公开了一种半导体发光器件，其包括多个半导体层，所述半导体层包括通过电子和孔的复合产生光的有源层。这里，有源层包括N 1-xy N（0 = x = 1,0 = y = 1， 0 = x + y = 1）阱层和Mg（1 1）阻挡层。

3. 发明申请

WO2009119951A1 LIGHT GENERATING DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：发光装置及其制造方法
公开(公告)号：WO2009119951A1
公开(公告)日：2009-10-01
申请号：PCT/KR2008/005927
申请日：2008-10-09
申请人： WOOREE LST CO., LTD. , AHN, Do-Yeol , PARK, Seoung-Hwan , OH, Jae-Eung
发明人： AHN, Do-Yeol , PARK, Seoung-Hwan , OH, Jae-Eung
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/16
摘要： A light generating device includes a substrate, an active layer, an N-type contact layer and a P-type contact layer. The active layer is formed on the substrate. The active layer includes nitride semiconductor crystal of which crystal axis is slant with respect to the substrate. The N-type contact layer provides the active layer with electrons. The P-type contact layer is disposed opposite to the N-type contact layer with respect to the active layer. The P-type contact layer provides the active layer with holes. Therefore, the light generating device generates a polarized light. Therefore, when the light generating device is employed by a backlight assembly of a liquid crystal display apparatus, light-using efficiency may be improved. Additionally, spontaneous emission is increased to improve internal quantum efficiency, and internal field of crystal is reduced to enhance light characteristics.
摘要翻译：发光装置包括基板，有源层，N型接触层和P型接触层。有源层形成在基板上。有源层包括晶体轴相对于衬底倾斜的氮化物半导体晶体。 N型接触层为活性层提供电子。 P型接触层相对于有源层与N型接触层相对设置。 P型接触层为活性层提供孔。因此，发光装置产生偏振光。因此，当通过液晶显示装置的背光组件使用发光装置时，可以提高光的使用效率。此外，增加自发发射以提高内部量子效率，并且降低晶体的内部场域以增强光特性。

4. 发明申请

WO2008147075A2 LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：发光装置及其制造方法
公开(公告)号：WO2008147075A2
公开(公告)日：2008-12-04
申请号：PCT/KR2008/002868
申请日：2008-05-22
申请人： WOOREELST CO., LTD. , AHN, Do Yeol , PARK, Seoung Hwan
发明人： AHN, Do Yeol , PARK, Seoung Hwan
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/28

5. 发明申请

WO2010062119A3 SEMICONDUCTOR LIGHT EMITTING ELEMENT 审中-公开
标题翻译：半导体发光元件
公开(公告)号：WO2010062119A3
公开(公告)日：2010-08-19
申请号：PCT/KR2009007001
申请日：2009-11-26
申请人： WOOREE LST CO LTD , AHN DO YEOL , PARK SEOUNG HWAN , KIM JONG WOOK , KOO BUN HEI
发明人： AHN DO YEOL , PARK SEOUNG HWAN , KIM JONG WOOK , KOO BUN HEI
IPC分类号： H01L33/06
CPC分类号： H01L33/06 , H01L33/32
摘要： The present disclosure relates to a semiconductor light emitting element that includes an active layer generating light through the recombination of electrons and holes. The active layer comprises: a quantum well made of a first compound semiconductor, and a barrier layer made of a second compound semiconductor. The quantum well includes: a first sub-quantum well having a first band gap; and a second sub-quantum well having a second band gap different from the first band gap.
摘要翻译：本发明涉及一种半导体发光元件，其包括通过电子和空穴的复合而产生光的有源层。有源层包括：由第一化合物半导体构成的量子阱和由第二化合物半导体构成的势垒层。量子阱包括：具有第一带隙的第一子量子阱; 以及具有不同于第一带隙的第二带隙的第二子量子阱。

6. 发明申请

WO2010080008A2 GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译： III类氮化物半导体发光器件
公开(公告)号：WO2010080008A2
公开(公告)日：2010-07-15
申请号：PCT/KR2010000165
申请日：2010-01-11
申请人： WOOREE LST CO LTD , KOO BUN HEI , AHN DO YEOL , PARK SEOUNG HWAN
发明人： KOO BUN HEI , AHN DO YEOL , PARK SEOUNG HWAN
IPC分类号： H01L33/04
CPC分类号： H01L33/32 , H01L33/06
摘要： The present disclosure relates to a group III nitride semiconductor light emitting device comprising an n-type group III nitride semiconductor layer, a p-type group III nitride semiconductor layer, and an active layer interposed between the two semiconductor layers to generate light by the re-combination of electrons and holes, wherein said active layer includes a quantum well layer having a first energy band gap, and a wave function localization guide layer which has a second energy band gap smaller than the first energy band gap, and is disposed within the quantum well layer.
摘要翻译：本公开内容涉及包括n型III族氮化物半导体层，p型III族氮化物半导体层和插入在两个半导体层之间的有源层的III族氮化物半导体发光器件，以通过重新产生光 - 电子和空穴的组合，其中所述活性层包括具有第一能带隙的量子阱层和具有小于第一能带隙的第二能带隙的波函数定位引导层，并且布置在量子阱层。

7. 发明申请

WO2010018985A3 SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：WO2010018985A3
公开(公告)日：2010-06-17
申请号：PCT/KR2009004487
申请日：2009-08-12
申请人： WOOREE LST CO LTD , JANG JUNG TAE , KOO BUN HEI , AHN DO YEOL , PARK SEOUNG HWAN
发明人： JANG JUNG TAE , KOO BUN HEI , AHN DO YEOL , PARK SEOUNG HWAN
IPC分类号： H01L33/26
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01L33/14
摘要： The present invention relates to a semiconductor light emitting device including a light emitting layer having an active layer, and a barrier layer constituted by superlattice layers disposed on and beneath the active layer to relieve stresses applied to the active layer and reduce the sum of the electric field by the spontaneous polarization in the active layer and electric field by piezo; an N-type contact layer for injecting electrons into the light emitting layer; and a P-type contact layer opposed to the N-type contact layer with the light emitting layer functioning as an interface, and which injects electrons into the light emitting layer. The active layer contains indium gallium nitride (InGaN), and the barrier layer is formed by alternately stacking an aluminum gallium nitride (AlGaN) thin film and an indium gallium nitride (InGaN) thin film.
摘要翻译：本发明涉及包括具有有源层的发光层的半导体发光器件和由有源层设置在有源层上和下面的超晶格层构成的阻挡层，以减轻施加到有源层上的应力并减小电通过有源层的自发极化和通过压电的电场; 用于将电子注入发光层的N型接触层; 以及与发光层作为界面起作用的N型接触层相对的P型接触层，并且向发光层注入电子。有源层含有氮化铟镓（InGaN），通过交替层叠氮化铝镓（AlGaN）薄膜和氮化铟镓（InGaN）薄膜来形成阻挡层。

8. 发明申请

WO2009148204A1 LIGHT GENERATING DEVICE INCLUDING COMPOUND SEMICONDUCTOR AND METHOD OF DETERMINING COMPOUND RATIO OF COMPOUND SEMICONDUCTOR FOR LIGHT GENERATING DEVICE 审中-公开
标题翻译：包括化合物半导体的发光装置和用于确定用于发光装置的化合物半导体的化合物比例的方法
公开(公告)号：WO2009148204A1
公开(公告)日：2009-12-10
申请号：PCT/KR2008/005929
申请日：2008-10-09
申请人： WOOREE LST CO., LTD. , AHN, Do-Yeol , PARK, Seoung-Hwan , JANG, Jung-Tae
发明人： AHN, Do-Yeol , PARK, Seoung-Hwan , JANG, Jung-Tae
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32 , H01S5/0035 , H01S5/34333
摘要： A method of manufacturing a light generating device with required wavelength is disclosed. According to the method, a) a required wavelength is determined. b) A polar angle and an azimuthal angle corresponding to the required wavelength in a nitride semiconductor are determined. Then, c) a nitride semiconductor crystal is grown according to the polar angle and the azimuthal angle. Therefore, a light generating device with required wavelength may be manufactured without adjusting amounts of elemsnts of compound semiconductor.
摘要翻译：公开了一种制造具有所需波长的发光装置的方法。根据该方法，a）确定所需的波长。 b）确定对应于氮化物半导体中所需波长的极角和方位角。然后，c）根据极角和方位角生长氮化物半导体晶体。因此，可以在不调整化合物半导体的电子量的情况下制造具有所需波长的发光装置。

9. 发明申请

WO2009005227A1 LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：发光装置及其制造方法
公开(公告)号：WO2009005227A1
公开(公告)日：2009-01-08
申请号：PCT/KR2008/003419
申请日：2008-06-17
申请人： WOOREELST CO., LTD. , AHN, Do Yeol , PARK, Seoung Hwan
发明人： AHN, Do Yeol , PARK, Seoung Hwan
IPC分类号： H01L33/00
CPC分类号： H01L33/16 , H01L33/12 , H01L33/26 , H01L33/32
摘要： Disclosed are a light-emitting diode and a method for fabricating the same. The ternary or quaternary Group III-V nitride semiconductor light-emitting diode comprises a buffer layer doped with conductive impurities and developed with an orientation inclined toward the axis [1122] at an angle of 40° to 70° with respect to the axis [0001] on a [0001]-oriented substrate, a light-emitting layer arranged on the buffer layer, a first electrode arranged under the buffer layer, and a second electrode arranged on the light-emitting layer, wherein the light-emitting layer includes a first clad layer arranged on the buffer layer, an activation layer arranged on the first clad layer and a second clad layer arranged on the activation layer. According to the semiconductor light-emitting diode, the light-emitting layer is formed on the substrate with an orientation inclined toward the axis [1122] at an angle of 40° to 70° with respect to the axis [0001], and compositions of Group III-V and Group II-VI compounds constituting the first and second clad layers are controlled. As a result, it is possible to offset the stresses applied to the activation layer and prevent spontaneous polarization. As a result, the light-emitting diode can exhibit improved light efficiency.
摘要翻译：公开了一种发光二极管及其制造方法。三元或四元组III-V族氮化物半导体发光二极管包括掺杂有导电杂质并以相对于轴[0001]以40°至70°的角度朝向轴线倾斜展开的缓冲层 ]，设置在缓冲层上的发光层，布置在缓冲层下方的第一电极和布置在发光层上的第二电极，其中发光层包括：布置在缓冲层上的第一包层，布置在第一包层上的活化层和布置在活化层上的第二包层。根据半导体发光二极管，发光层形成在基板上，相对于轴[0001]以相对于轴线[...]倾斜40°〜70°的方向，控制构成第一和第二包层的III-V族和II-VI族化合物。结果，可以抵消施加到激活层的应力并防止自发极化。结果，发光二极管可以表现出提高的光效率。

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