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1. 发明申请

WO2011119373A2 INTEGRATED CIRCUIT GUARD RINGS 审中-公开
标题翻译：集成电路保护环
公开(公告)号：WO2011119373A2
公开(公告)日：2011-09-29
申请号：PCT/US2011/028522
申请日：2011-03-15
申请人： ALTERA CORPORATION , JENSEN, Bradley , CHU, Charles, Y.
发明人： JENSEN, Bradley , CHU, Charles, Y.
IPC分类号： H01L21/76 , H01L21/336
CPC分类号： H01L21/76229 , H01L21/31053
摘要： Integrated circuits with guard rings are provided. Integrated circuits may include internal circuitry that is sensitive to external noise sources. A guard ring may surround the functional circuitry to isolate the circuitry from the noise sources. The guard ring may include first, second, and third regions. The first and third regions may include p-wells. The second region may include an n-well. Stripes of diffusion regions may be formed at the surface of a substrate in the three regions. Areas in the guard ring that are not occupied by the diffusion regions are occupied by shallow trench isolation (STI) structures. Stripes of dummy structures may be formed over respective STI structures and may not overlap the diffusion regions. The diffusion regions in the first and third regions may be biased to a ground voltage. The diffusion regions in the second section may be biased to a positive power supply voltage.
摘要翻译：提供带保护环的集成电路。集成电路可以包括对外部噪声源敏感的内部电路。保护环可以围绕功能电路以将电路与噪声源隔离。保护环可以包括第一，第二和第三区域。第一和第三区域可以包括p阱。第二区域可以包括n阱。扩散区域的条纹可以形成在三个区域中的基板的表面。保护环中未被扩散区占据的区域被浅沟槽隔离（STI）结构所占据。虚设结构的条纹可以形成在相应的STI结构上，并且可能不与扩散区重叠。第一和第三区域中的扩散区域可被偏压到接地电压。第二部分中的扩散区域可以被偏置到正电源电压。

2. 发明申请

WO2011119373A3 INTEGRATED CIRCUIT GUARD RINGS 审中-公开
标题翻译：集成电路保护环
公开(公告)号：WO2011119373A3
公开(公告)日：2011-12-22
申请号：PCT/US2011028522
申请日：2011-03-15
申请人： ALTERA CORP , JENSEN BRADLEY , CHU CHARLES Y
发明人： JENSEN BRADLEY , CHU CHARLES Y
IPC分类号： H01L21/76 , H01L21/336
CPC分类号： H01L21/76229 , H01L21/31053
摘要： Integrated circuits with guard rings are provided. Integrated circuits may include internal circuitry that is sensitive to external noise sources. A guard ring may surround the functional circuitry to isolate the circuitry from the noise sources. The guard ring may include first, second, and third regions. The first and third regions may include p-wells. The second region may include an n-well. Stripes of diffusion regions may be formed at the surface of a substrate in the three regions. Areas in the guard ring that are not occupied by the diffusion regions are occupied by shallow trench isolation (STI) structures. Stripes of dummy structures may be formed over respective STI structures and may not overlap the diffusion regions. The diffusion regions in the first and third regions may be biased to a ground voltage. The diffusion regions in the second section may be biased to a positive power supply voltage.
摘要翻译：提供带保护环的集成电路。集成电路可能包括对外部噪声源敏感的内部电路。保护环可环绕功能电路以将电路与噪声源隔离。保护环可以包括第一，第二和第三区域。第一和第三区域可以包括p阱。第二区域可以包括n阱。可以在三个区域中的衬底表面处形成扩散区域的条纹。未被扩散区占据的保护环中的区域被浅沟槽隔离（STI）结构占据。虚设结构的条纹可以形成在相应的STI结构上并且可以不与扩散区域重叠。第一和第三区域中的扩散区域可以被偏置到地电压。第二部分中的扩散区可以被偏置到正电源电压。

3. 发明申请

WO0069561A8 LIQUID METAL-HEATING APPARATUS FOR BIOLOGICAL/CHEMICAL SAMPLE 审中-公开
标题翻译：液体金属加热装置生物/化学样品
公开(公告)号：WO0069561A8
公开(公告)日：2001-05-31
申请号：PCT/US0013220
申请日：2000-05-12
申请人： HITACHI CHEMICAL RES CT INC , UNIV CALIFORNIA , MITSUHASHI MASATO , CHU CHARLES Y
发明人： MITSUHASHI MASATO , CHU CHARLES Y
IPC分类号： B01L7/00 , B01L7/02 , C12M1/02 , F28D15/00 , B01L3/00 , C12M1/34 , C12M1/36 , F28F7/00 , F28F27/02
CPC分类号： B01L7/5255 , B01L7/02 , B01L7/52 , B01L2300/12 , B01L2300/185 , F28D15/00 , Y10S435/911 , Y10S435/912
摘要： An apparatus (figure 8) for temperature control of biological/chemical samples employing liquid metal (83) is described. A gallium-indium alloy may be used to provide excellent temperature control. Methods of using liquid metal to provide temperature control for biological/chemical samples are also described. A preferred use for the described liquid metal-heating apparatus is to provide precise temperature control for polymerase chain reaction (PCR).
摘要翻译：描述了使用液态金属（83）的生物/化学样品的温度控制的装置（图8）。可以使用镓铟合金来提供优异的温度控制。还描述了使用液态金属为生物/化学样品提供温度控制的方法。所述液体金属加热装置的优选用途是为聚合酶链反应（PCR）提供精确的温度控制。

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