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1. 发明申请

WO2023278877A1 ELECTROCHEMICAL SENSORS FOR ANALYTE DETECTION IN WATER AND REFERENCE CORRECTION METHOD 审中-公开
公开(公告)号：WO2023278877A1
公开(公告)日：2023-01-05
申请号：PCT/US2022/036019
申请日：2022-07-01
申请人： BREWER SCIENCE, INC.
发明人： FURY, Jonathan J. , CAO, Xi , PETERS, Austin , LAKIN, Chad , SIMMONS, Cody , NEESON, Alec
IPC分类号： G01N27/30 , G01N27/403 , G01N27/416 , G01N33/18 , G01N27/3335 , G01N27/38 , G01N27/4161 , G01N27/42 , G01N33/182
摘要： A sensing platform for continuous water resource monitoring by electrochemical detection and solution parameter correction is provided. The sensing platform employs a solid-state electrolyte three-electrode cell, creating a high ionic strength environment within the solid-state electrolyte membrane, which is in ion exchange equilibria with the sampled solution. This device may be used as a standalone sensor in environments where the water parameters (pH temperature, and ionic strength) are controlled, or in concert with compensation sensors where water parameters are not controlled.

2. 发明申请

WO2021081482A1 HIGH-SILICON-CONTENT WET-REMOVABLE PLANARIZING LAYER 审中-公开
公开(公告)号：WO2021081482A1
公开(公告)日：2021-04-29
申请号：PCT/US2020/057317
申请日：2020-10-26
申请人： BREWER SCIENCE, INC.
发明人： LUO, Ming , WANG, Yubao , SAKAVUYI, Kaumba , KRISHNAMURTHY, Vandana
IPC分类号： H01L21/768 , H01L21/02 , H01L21/31 , H01L21/033
摘要： Lithographic compositions for use as wet-removable silicon gap fill layers are provided. The method of using these compositions involves utilizing a silicon gap fill layer over topographic features on a substrate. The silicon gap fill layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred silicon gap fill layers are formed from spin-coatable, polymeric compositions with high silicon content, and these layers exhibit good gap fill and planarization performance and high oxygen etch resistance.

3. 发明申请

WO2021050116A1 SELECTIVE LIQUIPHOBIC SURFACE MODIFICATION OF SUBSTRATES 审中-公开
公开(公告)号：WO2021050116A1
公开(公告)日：2021-03-18
申请号：PCT/US2020/031607
申请日：2020-05-06
申请人： BREWER SCIENCE, INC.
发明人： DAI, Jinhua , LOWES, Joyce, A. , CHACKO, Reuben
IPC分类号： H01L21/768 , H01L21/02 , H01L21/285
摘要： Materials and methods for modifying semiconducting substrate surfaces in order to dramatically change surface energy are provided. Preferred materials include perfluorocarbon molecules or polymers with various functional groups. The functional groups (carboxylic acids, hydroxyls, epoxies, aldehydes, and/or thiols) attach materials to the substrate surface by physical adsorption or chemical bonding, while the perfluorocarbon components contribute to low surface energy. Utilization of the disclosed materials and methods allows rapid transformation of surface properties from hydrophilic to hydrophobic (water contact angle 120° and PGMEA contact angle 70°). Selective liquiphobic modifications of copper over Si/SiOx, TiOx over Si/SiOx, and SiN over SiOx are also demonstrated.

4. 发明申请

WO2021026035A1 PERMANENT BONDING AND PATTERNING MATERIAL 审中-公开
公开(公告)号：WO2021026035A1
公开(公告)日：2021-02-11
申请号：PCT/US2020/044634
申请日：2020-07-31
申请人： BREWER SCIENCE, INC.
发明人： SEJOUBSARI, Reihaneh , FLAIM, Tony D. , LIU, Xiao
IPC分类号： C09J201/08 , C09J11/00 , C08K5/12 , C08K5/00 , B32B7/12
摘要： Methods are disclosed to prepare permanent materials that can be coated onto microelectronic substrates or used for other structural or optical applications. The materials are thermally stable to at least about 300°C, curable using a photo or thermal process, exhibit good chemical resistance (including during metal passivation), and have a lifespan of at least about 5 years, preferably at least about 10 years, in the final device. Advantageously, these materials can also be bonded at room temperature. The materials exhibit no movement or squeeze-out after bonding and adhere to a variety of substrate types.

5. 发明申请

WO2020092963A1 BOTTOM-UP CONFORMAL COATING AND PHOTOPATTERNING ON PAG-IMMOBILIZED SURFACES 审中-公开
公开(公告)号：WO2020092963A1
公开(公告)日：2020-05-07
申请号：PCT/US2019/059481
申请日：2019-11-01
申请人： BREWER SCIENCE, INC.
发明人： DAI, Jinhua , LOWES, Joyce A. , JONES, Carissa
IPC分类号： G03F1/00 , G03F7/09 , G03F7/20 , G03F7/34 , G03F7/42 , G03F7/021 , H01L21/027
摘要： Materials and methods to immobilize photoacid generators on semiconducting substrates are provided. PAG-containing monomers are copolymerized with monomers to allow the polymer to bind to a surface, and optionally copolymerized with monomers to enhance solubility to generate PAG-containing polymers. The PAG-containing monomers can be coated onto a surface, where the immobilized PAGs can then be used to pattern materials coated on top of the immobilized PAGs, allowing direct patterning without the use of a photoresist, thereby reducing process steps and cost. The disclosed materials and processes can be used to produce conformal coatings of controlled thicknesses.

6. 发明申请

WO2019241402A1 ADHESION LAYERS FOR EUV LITHOGRAPHY 审中-公开
公开(公告)号：WO2019241402A1
公开(公告)日：2019-12-19
申请号：PCT/US2019/036791
申请日：2019-06-12
申请人： BREWER SCIENCE, INC.
发明人： CHACKO, Andrea M. , KRISHNAMURTHY, Vandana , LIANG, Yichen , LEE, Hao , GRANNEMANN, Stephen , GUERRERO, Douglas J.
IPC分类号： G03F7/20 , G03F7/32 , G03F7/004 , H01L21/027 , H01L21/02
摘要： New lithographic compositions for use as EUV adhesion layers are provided. The present invention provides methods of fabricating microelectronics structures using those compositions as well as structures formed by those methods. The method involves utilizing an adhesion layer immediately below the photoresist layer. The adhesion layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate, such as an alpha-carbon, spin-on carbon, spin-on silicon hardmask, metal hardmask, or deposited silicon layer. The preferred adhesion layers are formed from spin-coatable, polymeric compositions. The inventive method improves adhesion and reduces or eliminates pattern collapse issues.

7. 发明申请

WO2017027334A1 ENVIRONMENTAL SENSOR SYSTEM AND SIGNAL PROCESSOR 审中-公开
标题翻译：环境传感器系统和信号处理器
公开(公告)号：WO2017027334A1
公开(公告)日：2017-02-16
申请号：PCT/US2016/045613
申请日：2016-08-04
申请人： BREWER SCIENCE INC.
发明人： FURY, Jonathan , ANTHONY, Nicholas , GIEDD, Ryan
IPC分类号： G01D21/02 , G01D1/02
CPC分类号： G01K7/16 , G01K1/18 , G01K3/10 , G01K7/20
摘要： A sensor system comprises a first sensor, a second sensor, a high pass filter, and a summation unit. The first sensor senses an environmental parameter and outputs a first electronic signal with a response having a first time constant. The second sensor senses the environmental parameter and outputs a second electronic signal with a response having a second time constant greater than the first time constant. The high pass filter has a filter time constant roughly equal to the second time constant and filters the first electronic signal, outputting a filtered first electronic signal in which changes in a level or value of the first electronic signal with transition times that are less than the filter time constant are passed. The summation unit receives the filtered first electronic signal and the second electronic signal and outputs a sum of the filtered first electronic signal and the second electronic signal.
摘要翻译：传感器系统包括第一传感器，第二传感器，高通滤波器和求和单元。第一传感器感测环境参数并输出具有第一时间常数的响应的第一电子信号。第二传感器感测环境参数，并且输出具有大于第一时间常数的第二时间常数的响应的第二电子信号。高通滤波器具有大致等于第二时间常数的滤波器时间常数，并对第一电子信号进行滤波，输出滤波后的第一电子信号，其中第一电子信号的电平或值的变化具有小于过滤器时间常数通过。求和单元接收经滤波的第一电子信号和第二电子信号，并输出滤波后的第一电子信号和第二电子信号的和。

8. 发明申请

WO2016209828A1 SUPERPLANARIZING SPIN-ON CARBON MATERIALS 审中-公开
标题翻译：超级自旋碳素材料
公开(公告)号：WO2016209828A1
公开(公告)日：2016-12-29
申请号：PCT/US2016/038554
申请日：2016-06-21
申请人： BREWER SCIENCE INC.
发明人： ZHONG, Xing-Fu , HUANG, Runhui , ZHANG, Boyu
IPC分类号： H01L21/027 , H01L21/768 , G03F1/22 , G03F1/48 , G03F7/26 , G03F7/004
CPC分类号： H01L21/0337 , C09D125/08 , C09D131/02 , C09D179/08 , H01L21/02118 , H01L21/02282
摘要： Planarizing and spin-on-carbon (SOC) compositions that fill vias and/or trenches on a substrate while planarizing the surface in a single thin layer coating process are provided. The compositions can planarize wide ranges of substrates with vias or trenches of from about 20 nm to about 220 nm wide, and up to about 700 nm deep. These extraordinary properties come from the low molecular weight of the polymers used in the materials, thermally-labile protecting groups on the polymers, and a delayed crosslinking reaction.
摘要翻译：提供了在单个薄层涂覆工艺中平坦化表面的同时在基板上填充过孔和/或沟槽的平面化和旋涂碳（SOC）组合物。组合物可以通过具有约20nm至约220nm宽和高达约700nm深的通孔或沟槽来平坦化宽范围的衬底。这些非凡的性质来自材料中使用的聚合物的低分子量，聚合物上的热不稳定保护基团和延迟的交联反应。

9. 发明申请

WO2014165406A1 APPARATUS AND METHOD FOR THIN WAFER TRANSFER 审中-公开
标题翻译：用于薄膜转移的装置和方法
公开(公告)号：WO2014165406A1
公开(公告)日：2014-10-09
申请号：PCT/US2014/032226
申请日：2014-03-28
申请人： BREWER SCIENCE INC.
发明人： WATERWORTH, Blake , RICH, Steven Matthew , HLADIK, Molly , EMORY, Kirk
IPC分类号： H01L21/677 , B65G49/07
CPC分类号： H01L21/76898 , H01L21/68707 , H01L21/68714 , H01L21/68757 , H01L21/68785 , Y10T156/11 , Y10T156/1744 , Y10T156/18 , Y10T156/19
摘要： A wafer transfer assembly and method of using the assembly to transfer device wafers between processing tools in a manufacturing process are described herein. The assembly comprises a wafer transfer disk, an end effector configured to receive and support the wafer transfer disk, and an elongated handle extending from the end effector. The wafer transfer disk comprises a wafer-engaging surface configured to support a debonded device wafer placed on the wafer transfer assembly with the device surface adjacent the wafer-engaging surface. The wafer-engaging surface has non-stick properties, and yields a low bonding strength interface between the wafer-engaging surface and device surface. The resulting transfer stack can be transported to other processing tools for additional processing of the debonded device wafer, followed by separating the debonded device wafer and the wafer transfer disk without damaging the device wafer.
摘要翻译：这里描述了晶片转移组件和在制造过程中使用组件在处理工具之间转移装置晶片的方法。组件包括晶片转移盘，配置成接收和支撑晶片转移盘的端部执行器，以及从端部执行器延伸的细长手柄。晶片转移盘包括晶片接合表面，其被配置为支撑位于晶片转移组件上的脱粘器件晶片，其中器件表面邻近晶片接合表面。晶片接合表面具有不粘性，并且在晶片接合表面和器件表面之间产生低的结合强度界面。所得到的转移堆叠可以被运送到其他处理工具，用于对脱粘器件晶片进行附加处理，随后分离脱粘器件晶片和晶片转移盘而不破坏器件晶片。

10. 发明申请

WO2014074943A1 CVD-FREE, SCALABLE PROCESSES FOR THE PRODUCTION OF SILICON MICRO- AND NANOSTRUCTURES 审中-公开
标题翻译：无CVD，生产硅微结构和纳米结构的可扩展工艺
公开(公告)号：WO2014074943A1
公开(公告)日：2014-05-15
申请号：PCT/US2013/069334
申请日：2013-11-08
申请人： BREWER SCIENCE INC.
发明人： MALHOTRA, Jyoti K. , LEITH, Jeff , PLANJE, Curtis
IPC分类号： B82B3/00 , B82B1/00
CPC分类号： H01L29/0676 , B81C1/00111 , B81C99/008 , B82Y10/00 , B82Y40/00 , G03F1/50 , G03F7/0035 , H01L21/0259 , H01L21/02606 , H01L29/0665 , H01L29/0669 , H01L51/0048
摘要： Manufacturing-friendly and scalable methods for the production of silicon micro- and nanostructures, including silicon nanotubes, are described. The inventive methods utilize conventional integrated circuit and MEMS manufacturing processes, including spin-coating, photolithography, wet and dry silicon etching, and photoassisted electrochemical etch processes. The invention also provides a novel mask, for maximizing the number of tubes obtained per surface area unit of the silicon substrate on which the tubes are built. The resulting tubes have thick and straight outer walls, as well as high aspect ratios.
摘要翻译：描述了用于生产硅微纳米结构（包括硅纳米管）的制造友好且可扩展的方法。本发明的方法利用传统的集成电路和MEMS制造工艺，包括旋涂，光刻，湿和干硅蚀刻以及光辅助电化学蚀刻工艺。本发明还提供了一种新颖的掩模，用于最大化在其上构建管的硅衬底的每表面积单位获得的管的数目。所得到的管具有厚而直的外壁以及高纵横比。

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