专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2008064216A2 MICRO-ELECTRO MECHANICAL TUNNELING SWITCH 审中-公开
标题翻译：微电机械隧道开关
公开(公告)号：WO2008064216A2
公开(公告)日：2008-05-29
申请号：PCT/US2007/085224
申请日：2007-11-20
申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY , BOZLER, Carl, O. , KEAST, Craig, L. , MULDAVIN, Jeremy
发明人： BOZLER, Carl, O. , KEAST, Craig, L. , MULDAVIN, Jeremy
IPC分类号： H01H1/00 , H01H59/00
CPC分类号： H01H59/0009 , B81B3/001 , B81B2201/014 , H01H2059/0063 , H01H2059/0072
摘要： A micro-electromechanical system switch includes a substrate and a plurality of actuating electrodes formed the substrate wherein each actuating electrode is activatable. A cantilever beam has a first end and a second end and a plurality of stops formed thereon. The plurality of stops engages the substrate between the plurality of actuating electrode. A contact area is formed in the substrate and located to engage the second end of the cantilever beam. A voltage source applies a voltage to each actuating electrode independently in a sequence from an actuating electrode located adjacent to the first end of the cantilever beam to an actuating electrode located adjacent to the second end of the cantilever beam so that the piurality of stops sequentially engage the substrate between the plurality of actuating electrodes.
摘要翻译：微机电系统开关包括基板和形成基板的多个致动电极，其中每个致动电极都是可激活的。悬臂梁具有形成在其上的第一端和第二端以及多个挡块。多个止动件与多个致动电极之间的基板接合。接触区域形成在基板中并且被定位成接合悬臂梁的第二端。电压源按照从悬臂梁的第一端附近的致动电极到位于悬臂梁的第二端附近的致动电极的顺序独立地施加电压，使得止动器的弯曲度顺序地接合多个致动电极之间的基板。

2. 发明申请

WO2006105265A2 MICRO-ELECTRO MECHANICAL SWITCH DESIGNS 审中-公开
标题翻译：微电机械开关设计
公开(公告)号：WO2006105265A2
公开(公告)日：2006-10-05
申请号：PCT/US2006/011589
申请日：2006-03-29
申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY , BOZLER, Carl, O. , BERRY, Shaun, R. , MULDAVIN, Jeremy , KEAST, Craig, L.
发明人： BOZLER, Carl, O. , BERRY, Shaun, R. , MULDAVIN, Jeremy , KEAST, Craig, L.
IPC分类号： H01H59/00
CPC分类号： H01H59/0009 , H01G5/18 , H01G5/40 , H01H2059/0081
摘要： A capacitive RF switch and DC RF switch include a fixed electrode having a thin layer of metal and at least one pull-down electrode. A moving plate has a plurality of corrugations and a selective finger design. The capacitive switch includes a selective finger that comes into contact with the fixed electrode so as to minimize the stiction between the moving plate and the fixed electrode when the switch is closed. The DC switch comprises a plurality of dimples that are formed on the selective portion of the moving plate and are positioned to come into contact with the fixed electrode when the switch is closed so as to increase the contact force and lower the resistance between the moving plate and fixed electrode.
摘要翻译：电容RF开关和DC RF开关包括具有薄层金属和至少一个下拉电极的固定电极。移动板具有多个波纹和选择性手指设计。电容开关包括与固定电极接触的选择性手指，以便当开关闭合时使移动板和固定电极之间的静摩擦最小化。 DC开关包括形成在移动板的选择部分上并且当开关闭合时定位成与固定电极接触的多个凹坑，以便增加接触力并降低移动板之间的电阻和固定电极。

3. 发明申请

WO2009076192A2 MECHANICAL MEMORY TRANSISTOR 审中-公开
标题翻译：机械记忆晶体管
公开(公告)号：WO2009076192A2
公开(公告)日：2009-06-18
申请号：PCT/US2008/085654
申请日：2008-12-05
申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY , BOZLER, Carl, O.
发明人： BOZLER, Carl, O.
IPC分类号： H01L21/336 , H01L21/82 , H01L27/10
CPC分类号： H01L29/84 , B82Y10/00 , G11C23/00 , H01H59/0009 , H01L29/685 , H01L29/78
摘要： A mechanical memory transistor includes a substrate having formed thereon a source region and a drain region. An oxide is formed upon a portion of the source region and upon a portion of the drain region. A pull up electrode is positioned above the substrate such that a gap is formed between the pull up electrode and the substrate. A movable gate has a first position and a second position. The movable gate is located in the gap between the pull up electrode and the substrate. The movable gate is in contact with the pull up electrode when the movable gate is in a first position and is in contact with the oxide to form a gate region when the movable gate is in the second position. The movable gate, in conjunction with the source region and the drain region and when the movable gate is in the second position, form a transistor that can be utilized as a non-volatile memory element.
摘要翻译：机械存储器晶体管包括其上形成有源极区和漏极区的衬底。氧化物形成在源极区域的一部分上和漏极区域的一部分上。上拉电极位于衬底上方，使得在上拉电极和衬底之间形成间隙。可移动门具有第一位置和第二位置。可动门位于上拉电极和基板之间的间隙中。当活动门处于第一位置时，活动门与上拉电极接触，并且当活动门处于第二位置时，活动门与氧化物接触以形成门区。可移动栅极结合源极区和漏极区以及当可移动栅极处于第二位置时形成可用作非易失性存储器元件的晶体管。

4. 发明申请

WO2008042478A9 WIDE BAND AND RADIO FREQUENCY WAVEGUIDE AND HYBRID INTEGRATION IN A SILICON PACKAGE 审中-公开
标题翻译：宽带和射频频率波导以及在硅封装中的混合集成
公开(公告)号：WO2008042478A9
公开(公告)日：2008-07-03
申请号：PCT/US2007070870
申请日：2007-06-11
申请人： MASSACHUSETTS INST TECHNOLOGY , BOZLER CARL O , MULDAVIN JEREMY , WYATT PETER W , KEAST CRAIG L , RABE STEVEN
发明人： BOZLER CARL O , MULDAVIN JEREMY , WYATT PETER W , KEAST CRAIG L , RABE STEVEN
IPC分类号： H01L23/053 , H01L23/31 , H01L23/66 , H01P1/12 , H01P3/06 , H03H9/10
CPC分类号： H01P3/08 , B81B7/0064 , B81B2201/014 , B81B2207/07 , B81C2203/0109 , B81C2203/036 , H01L2924/0002 , H01L2924/00
摘要： A device includes a device wafer (400) having a circuit component (375) formed thereon and having vias (300) formed therein and a cap wafer (100) bonded to the device wafer. The cap wafer has a cavity (250) therein. The cavity has a post (200) formed therein, and the post is positioned to mechanically support the vias formed in the device wafer. The cavity has a volume, the volume substantially enclosing the circuit component formed on the device wafer. The cavity has a width and height such that an impedance of a transmission line is dependent upon the width and height of the cavity, or the impedance of a transmission line is dependent upon the width of a center conductor (350) within the cavity.
摘要翻译：一种器件包括器件晶片（400），该器件晶片具有在其上形成的电路部件（375）并且具有形成在其中的通孔（300）以及结合到器件晶片的盖晶片（100）。盖晶片中具有空腔（250）。该空腔具有形成在其中的柱（200），并且该柱被定位成机械地支撑形成在器件晶片中的通孔。该空腔具有一个体积，该体积基本上封装在器件晶片上形成的电路组件。腔具有宽度和高度，使得传输线的阻抗取决于腔的宽度和高度，或者传输线的阻抗取决于腔内的中心导体（350）的宽度。

5. 发明申请

WO2008042478A3 WIDE BAND AND RADIO FREQUENCY WAVEGUIDE AND HYBRID INTEGRATION IN A SILICON PACKAGE 审中-公开
公开(公告)号：WO2008042478A3
公开(公告)日：2008-04-10
申请号：PCT/US2007/070870
申请日：2007-06-11
申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY , BOZLER, Carl, O. , MULDAVIN, Jeremy , WYATT, Peter, W. , KEAST, Craig, L. , RABE, Steven
发明人： BOZLER, Carl, O. , MULDAVIN, Jeremy , WYATT, Peter, W. , KEAST, Craig, L. , RABE, Steven
IPC分类号： H01L23/053 , H01L23/31 , H01L23/66 , H03H9/10 , H01P1/12 , H01P3/06
摘要： A device includes a device wafer (400) having a circuit component (375) formed thereon and having vias (300) formed therein and a cap wafer (100) bonded to the device wafer. The cap wafer has a cavity (250) therein. The cavity has a post (200) formed therein, and the post is positioned to mechanically support the vias formed in the device wafer. The cavity has a volume, the volume substantially enclosing the circuit component formed on the device wafer. The cavity has a width and height such that an impedance of a transmission line is dependent upon the width and height of the cavity, or the impedance of a transmission line is dependent upon the width of a center conductor (350) within the cavity.

6. 发明申请

WO2008042478A2 WIDE BAND AND RADIO FREQUENCY WAVEGUIDE AND HYBRID INTEGRATION IN A SILICON PACKAGE 审中-公开
标题翻译：宽带和无线电频率波形和硅包装中的混合集成
公开(公告)号：WO2008042478A2
公开(公告)日：2008-04-10
申请号：PCT/US2007070870
申请日：2007-06-11
申请人： MASSACHUSETTS INST TECHNOLOGY , BOZLER CARL O , MULDAVIN JEREMY , WYATT PETER W , KEAST CRAIG L , RABE STEVEN
发明人： BOZLER CARL O , MULDAVIN JEREMY , WYATT PETER W , KEAST CRAIG L , RABE STEVEN
CPC分类号： H01P3/08 , B81B7/0064 , B81B2201/014 , B81B2207/07 , B81C2203/0109 , B81C2203/036 , H01L2924/0002 , H01L2924/00
摘要： A device includes a device wafer having a circuit component formed thereon and having vias formed therein and a cap wafer bonded to the device wafer. The cap wafer has a cavity therein. The cavity has a post formed therein, and the post is positioned to mechanically support the vias formed in the device wafer. The cavity has a volume, the volume substantially enclosing the circuit component formed on the device wafer. The cavity has a width and height such that an impedance of a transmission line is dependent upon the width and height of the cavity, or the impedance of a transmission line is dependent upon the width of a center conductor within the cavity.
摘要翻译：一种器件包括具有形成在其上的电路部件并且具有形成在其中的通孔的器件晶片和结合到器件晶片的帽晶片。盖晶片在其中具有空腔。空腔具有形成在其中的柱，并且柱被定位成机械地支撑形成在器件晶片中的通孔。空腔具有体积，该体积基本上包围形成在器件晶片上的电路部件。空腔具有宽度和高度，使得传输线的阻抗取决于空腔的宽度和高度，或者传输线的阻抗取决于腔内的中心导体的宽度。

7. 发明申请

WO2006060034A1 LIGHT MODULATING MIRROR DEVICE AND ARRAY OF MIRROR DEVICES 审中-公开
标题翻译：光调制反射器件和镜像器件阵列
公开(公告)号：WO2006060034A1
公开(公告)日：2006-06-08
申请号：PCT/US2005/018513
申请日：2005-05-26
申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY , BOZLER, Carl, O. , LYONS, W., Gregory , MULDAVIN, Jeremy, B.
发明人： BOZLER, Carl, O. , LYONS, W., Gregory , MULDAVIN, Jeremy, B.
IPC分类号： G01S17/74 , G02B26/08 , G02B5/122
CPC分类号： G02B26/0841 , G02B5/122
摘要： A deformable reflector includes a plurality of MEMS devices, each having an electrode membrane having a reflective surface thereon, a flat surface, and a pulldown electrode formed in the flat substrate. The electrode membrane has substantially a same flatness of the flat substrate when the electrode membrane comes into contact with the flat substrate across a majority of its surface area in response to a voltage being applied to the pulldown electrode. The electrode membrane has a two-dimensional curvature when no voltage is applied to the pulldown electrode.
摘要翻译：可变形反射器包括多个MEMS器件，每个MEMS器件具有其上具有反射表面的电极膜，平坦表面和形成在平坦衬底中的下拉电极。当电极膜响应于施加到下拉电极的电压而在其大部分表面区域与平坦基板接触时，电极膜具有基本相同的平坦基板的平坦度。当没有电压施加到下拉电极时，电极膜具有二维曲率。

8. 发明申请

WO2009076192A3 MECHANICAL MEMORY TRANSISTOR 审中-公开
标题翻译：机械存储晶体管
公开(公告)号：WO2009076192A3
公开(公告)日：2009-09-24
申请号：PCT/US2008085654
申请日：2008-12-05
申请人： MASSACHUSETTS INST TECHNOLOGY , BOZLER CARL O
发明人： BOZLER CARL O
IPC分类号： H01L21/336 , H01L21/8242 , H01L27/108
CPC分类号： H01L29/84 , B82Y10/00 , G11C23/00 , H01H59/0009 , H01L29/685 , H01L29/78
摘要： A mechanical memory transistor includes a substrate having formed thereon a source region and a drain region. An oxide is formed upon a portion of the source region and upon a portion of the drain region. A pull up electrode is positioned above the substrate such that a gap is formed between the pull up electrode and the substrate. A movable gate has a first position and a second position. The movable gate is located in the gap between the pull up electrode and the substrate. The movable gate is in contact with the pull up electrode when the movable gate is in a first position and is in contact with the oxide to form a gate region when the movable gate is in the second position. The movable gate, in conjunction with the source region and the drain region and when the movable gate is in the second position, form a transistor that can be utilized as a non-volatile memory element.
摘要翻译：机械存储晶体管包括其上形成有源极区和漏极区的衬底。在源区的一部分上和漏极区的一部分上形成氧化物。上拉电极位于衬底之上，使得在上拉电极和衬底之间形成间隙。可动门具有第一位置和第二位置。可移动栅极位于上拉电极和基板之间的间隙中。当可移动栅极处于第一位置时，可移动栅极与上拉电极接触并且当可移动栅极处于第二位置时与可动栅极接触以形成栅极区域。可移动栅极与源极区域和漏极区域结合，并且当可移动栅极处于第二位置时，形成可用作非易失性存储元件的晶体管。

9. 发明申请

WO2008064216A3 MICRO-ELECTRO MECHANICAL TUNNELING SWITCH 审中-公开
标题翻译：微电机械隧道开关
公开(公告)号：WO2008064216A3
公开(公告)日：2008-11-27
申请号：PCT/US2007085224
申请日：2007-11-20
申请人： MASSACHUSETTS INST TECHNOLOGY , BOZLER CARL O , KEAST CRAIG L , MULDAVIN JEREMY
发明人： BOZLER CARL O , KEAST CRAIG L , MULDAVIN JEREMY
IPC分类号： H01H59/00
CPC分类号： H01H59/0009 , B81B3/001 , B81B2201/014 , H01H2059/0063 , H01H2059/0072
摘要： A micro-electromechanical system switch includes a substrate (40) and a plurality of actuating electrodes (3000) formed the substrate wherein each actuating electrode is activatable. A cantilever beam (10) has a first end and a second end and a plurality of stops (2000) formed thereon. The plurality of stops engages the substrate between the plurality of actuating electrode. A contact area (2100) is formed in the substrate and located to engage the second end (2000) of the cantilever beam. A voltage source applies a voltage to each actuating electrode independently in a sequence from an actuating electrode located adjacent to the first end of the cantilever beam to an actuating electrode located adjacent to the second end of the cantilever beam so that the plurality of stops sequentially engage the substrate between the plurality of actuating electrodes.
摘要翻译：微机电系统开关包括基板（40）和形成基板的多个致动电极（3000），其中每个致动电极都是可激活的。悬臂梁（10）具有形成在其上的第一端和第二端以及多个挡块（2000）。多个止动件与多个致动电极之间的基板接合。接触区域（2100）形成在基板中并且被定位成接合悬臂梁的第二端（2000）。电压源以与从悬臂梁的第一端相邻的致动电极的顺序独立地向每个致动电极施加电压到与悬臂梁的第二端相邻的致动电极，使得多个停止件顺序地接合多个致动电极之间的基板。

10. 发明申请

WO2006105265A3 MICRO-ELECTRO MECHANICAL SWITCH DESIGNS 审中-公开
标题翻译：微电机械开关设计
公开(公告)号：WO2006105265A3
公开(公告)日：2007-01-18
申请号：PCT/US2006011589
申请日：2006-03-29
申请人： MASSACHUSETTS INST TECHNOLOGY , BOZLER CARL O , BERRY SHAUN R , MULDAVIN JEREMY , KEAST CRAIG L
发明人： BOZLER CARL O , BERRY SHAUN R , MULDAVIN JEREMY , KEAST CRAIG L
IPC分类号： H01H59/00
CPC分类号： H01H59/0009 , H01G5/18 , H01G5/40 , H01H2059/0081
摘要： A capacitive RF switch and DC RF switch include a fixed electrode having a thin layer of metal and at least one pull-down electrode. A moving plate has a plurality of corrugations and a selective finger design. The capacitive switch includes a selective finger that comes into contact with the fixed electrode so as to minimize the stiction between the moving plate and the fixed electrode when the switch is closed. The DC switch comprises a plurality of dimples that are formed on the selective portion of the moving plate and are positioned to come into contact with the fixed electrode when the switch is closed so as to increase the contact force and lower the resistance between the moving plate and fixed electrode.
摘要翻译：电容RF开关和DC RF开关包括具有薄层金属和至少一个下拉电极的固定电极。移动板具有多个波纹和选择性手指设计。电容开关包括与固定电极接触的选择性手指，以便当开关闭合时使移动板和固定电极之间的静摩擦最小化。 DC开关包括形成在移动板的选择部分上并且当开关闭合时定位成与固定电极接触的多个凹坑，以便增加接触力并降低移动板之间的电阻和固定电极。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式